CN106847781B - 功率模块封装及其制造方法 - Google Patents

功率模块封装及其制造方法 Download PDF

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Publication number
CN106847781B
CN106847781B CN201610563409.3A CN201610563409A CN106847781B CN 106847781 B CN106847781 B CN 106847781B CN 201610563409 A CN201610563409 A CN 201610563409A CN 106847781 B CN106847781 B CN 106847781B
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band
spacer
adhesive layer
power semiconductor
lower substrate
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CN106847781A (zh
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高在铉
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Hyundai Mobis Co Ltd
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Hyundai Mobis Co Ltd
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Abstract

本公开涉及一种功率模块封装及其制造方法。所述功率模块封装包括其上形成有图案的下基板，彼此以预定距离分隔开从而安装在下基板的上表面上的功率半导体元件和带，通过第一粘合层连接至所述功率半导体元件的上部的第一间隔物，通过第二粘合层连接至所述带的上部的第二间隔物，和通过第三粘合层连接至所述第一间隔物和所述第二间隔物每个的上部的上基板。

Description

功率模块封装及其制造方法
相关申请的交叉引用
本申请要求于2015年12月07日提交的申请号为10-2015-0173010的韩国专利申请的权益，该申请的全部内容通过引用并入本文。
技术领域
本发明涉及一种功率模块封装及其制造方法，具体涉及一种能够保持封装的厚度恒定，防止质量和产品寿命降低，并促进过程稳定性和生产力提高的功率模块封装，以及一种用于制造所述功率模块封装的方法。
背景技术
功率模块封装是指其中在一个基板上集成有一个或多个开关元件的功率半导体产品，所述开关元件包括绝缘栅双极晶体管(IGBT)、二极管、金属氧化物半导体场效应晶体管(MOSFET)、晶闸管等。
由于功率开关元件在操作时产生很多热量，因此功率模块封装选择具有优异的散热性能的材料是重要的，并且因为功率开关元件应在垂直方向上彼此平行布置，所以功率模块封装被设计成具有优异的导热性和热扩散性的封装结构。
因此，目前在功率模块封装中采用具有优异的热特性的铜板或直接敷铜(DBC)型基板，并且在铜镀覆或直接敷铜基板的后表面上安装用于降低功率模块封装中所生成的高温的热的热管或散热器。
虽然在功率模块封装中采用了这种具有优异热性能的基板，但由于对电力特性的需求的增加，固定功率模块封装的热可靠性是最突出的难点，因此需要能够更有效地散热的技术。
为了解决上述的问题，正在开发具有两个DBC基板彼此连接在以半导体芯片为中心的对称结构的功率模块封装。
图1是示出了根据相关技术的功率模块封装的结构的剖面图。
根据图1中所示的功率模块封装100的结构，下基板110和上基板120被设置成以功率半导体元件130为中心的对称结构。
于此，下基板110可以由陶瓷基材料111的上部和下部形成有铜层112和113的结构构成，并且上基板120可以由陶瓷基体材料121的上部和下部形成有铜层122和123的结构构成。
同时，功率半导体元件130通过焊料160连接到下基板110，图案115形成在下基板110上，并且功率半导体元件130通过导线W连接到图案115。
并且，提供了用于与外部侧电连接的引线框140和145，并且第一引线框140通过焊料161连接到图案115，第二引线框145通过焊料162连接到下基板110。
另外，在下基板110和上基板120之间提供了用于保持它们之间间隔的间隔物150和155。
于此，第一间隔物150通过焊料163和164连接在功率半导体元件130和上基板120之间，第二间隔物155通过焊料165和166连接在下基板110和上基板120之间。
最后，如上所述而构成的功率模块封装100，通过使用模制材料170暴露第一引线框140和第二引线框145的一些部分并且包围和覆盖其剩余部分来完成。
在如图1中构成的功率模块封装100，如果功率半导体元件130和第一间隔物150的连接厚度T1与下基板110和上基板120的连接厚度T2彼此不相同，则由于空隙的产生，会发生质量和产品寿命的降低。
发明内容
因此，提供了本发明来解决上述的问题，并且本发明的一个目的是提供一种能够保持封装的厚度恒定，防止质量和产品寿命降低，并促进过程稳定性和生产力提高的功率模块封装，以及一种用于制造所述功率模块封装的方法。
在根据本发明的一个方面，功率模块封装包括，其上形成有图案的下基板，彼此以预定距离分隔开从而安装在下基板的上表面上的功率半导体元件和带，通过第一粘合层连接至所述功率半导体元件的上部的第一间隔物，通过第二粘合层连接至所述带的上部的第二间隔物，以及通过第三粘合层连接至所述第一间隔物和所述第二间隔物每个的上部的上基板。
所述第二间隔物的下表面可以与所述带的上表面接触，使得所述第二间隔物由所述带支撑。
所述第一粘合层可以形成在所述功率半导体元件的上部，并且所述第二粘合层形成为围绕所述带。
所述功率半导体元件可以通过焊接安装在所述下基板上，并且所述带通过粘接被安装在所述下基板上。
根据本发明的另一个方面，一种用于制造功率模块封装方法，包括：将功率半导体元件和带安装在下基板上，将第一粘合层涂覆在所述功率半导体元件的上表面上，将第二粘合层围绕所述带，将第一间隔物安装在所述第一粘合层上，将第二间隔物安装在所述第二粘合层上，以及使用第三粘合层将上基板连接至所述下基板。
所述方法可进一步包括，将第一和第二引线框安装在所述下基板上，和使用导线将所述第一引线框电连接至所述功率半导体元件，其中，所述安装和所述连接是在将所述功率半导体元件和所述带安装至所述下基板与将所述第一粘合层涂覆在所述功率半导体元件的上表面上并且将所述第二粘合层围绕所述带之间进行的。
所述功率半导体元件和所述带的安装可以是在安装所述功率半导体元件之后安装所述带。
所述功率半导体元件和所述带的安装可以是在安装所述带之后安装所述功率半导体元件。
所述功率半导体元件和所述带的安装，可以使用焊接将所述功率半导体元件安装在所述下基板上，并且使用粘接将所述带安装在所述下基板上。
所述功率半导体元件和所述带的安装中所述带的安装，可以通过将所述带粘接至所述下基板并且压缩所述粘接的带而进行。
将所述第二间隔物安装在所述第二粘合层上，可以使得所述第二间隔物的下表面接触所述带的上表面从而由所述带支撑所述第二间隔物。
在相关技术中，厚度不均匀的问题发生在根据工艺条件的功率模块封装中，但根据本发明的功率模块封装的厚度非均匀性可以通过改变取决于工艺条件带的压缩度来解决，该工艺条件例如功率模块封装的厚度。
因此，功率模块封装的厚度也可以保持恒定，使得可以防止由非均匀厚度引起的质量的产品寿命的降低，并且可以提高工艺稳定性和生产率的提高。
附图说明
参照附图，通过详细描述本发明的示例性实施例，本发明的上述和其它的目的、特征和优点对于本领域的普通技术人员将变得更加清楚：
图1是示出了根据相关技术的功率模块封装的结构的剖面图；
图2是示出了根据本发明的一个实施例的功率模块封装的结构的剖面图；以及
图3A至3E是顺序地示出了根据本发明的实施例的用于制造功率模块封装的方法的剖面图。
具体实施方式
根据以下详细描述和附图，本发明的优点、特征及其实现将是显而易见的。然而，本发明并不限制于本文要公开的实施例，许多其他的修改可以被实现。虽然将参照许多示例性实施例了来描述这些实施方式，但是应该理解的是，本领域的技术人员可以设计出落入本公开的原理的精神和范围内的许多其他的修改和实施例。本发明的范围应当通过所附权利要求，以及这些权利要求享有的等同物的全部范围进行解释。贯穿本公开给出各部件的附图标记，相同的部件给定相同的附图标记。
另外，在本发明的以下描述中，如果已知的功能和结构被确定为使本发明实施例的解释难以理解，其详细描述将被省略。并且，以下使用的所有术语是通过考虑实施方案中的功能来选择的，并且根据用户，操作者的意图、或习惯，它们的含义可能是不同的。因此，本文所使用的术语的含义应该遵循本文所公开的上下文。
下面，将参照附图详细描述根据本发明的功率模块封装及其制造方法。
图2是示出了根据本发明实施例的功率模块封装的结构的剖面图。
参照图2仔细观察根据本发明实施例的功率模块封装200的结构，功率半导体元件230设置在彼此以预定距离分隔开的第一基板210和第二基板220之间。换句话说，第一基板210和第二基板220被设置在以功率半导体元件230为中心的对称结构中。
此处，第一基板210和第二基板220可以是DBC基板，但是它们不限于此，并且可以是具有阳极氧化层、印刷电路板以及陶瓷基板的金属基板。
此后，第一基板210表示为下基板，第二基板220表示为上基板，并且假定第一基板210和第二基板220是DBC基板。
下基板210可以由陶瓷基材料211的上部和下部形成有铜层212和213的结构构成，该陶瓷基体材料211由包括氧化铝(Al2O3)、氮化铝(AlN)和一氧化铍(BeO)等绝缘基的材料形成。
同样地，上基板220可以由陶瓷基体材料221的上部和下部形成有铜层222和223的结构构成，该陶瓷基体材料211由包括氧化铝(Al2O3)、氮化铝(AlN)和一氧化铍(BeO)等绝缘基的材料形成。
然而，在下基板210中，上铜层212被图案化，以便通过印刷电路板技术形成电路，从而包括电路图案，而下铜层213不包括电路图案。并且，在上基板220中，上铜层222和下铜层223具有不带电路图案的结构。
在本发明相关的领域中，DBC基板是公知的，因此将省略它们的详细描述。
同时，功率半导体元件230可以包括硅控整流器(SCR)、功率晶体管，IGBT、MOS晶体管、功率整流器、功率调节器、逆变器、转换器、二极管或者它们的组合，包括高功率半导体芯片，但不限于此。在相关领域中功率半导体元件230是公知的，并且因此将省略其详细描述。
于此，功率半导体元件230通过粘合层260连接到下基板210的上铜层212，并通过导线W连接到图案215
同时，用于与外部侧电连接的引线框240和245设置在下基板210的上部，并且第一引线框240通过粘合层261连接到下基板210的图案215，第二引线框245通过粘合层262连接到下基板210的上铜层212。
并且，在下基板210和上基板220之间设置有用于形成它们之间间隔的间隔物250和255。
于此，第一间隔物250通过粘合层263和264连接在上基板220和功率半导体元件230之间，第二间隔物255通过粘合层265和266连接在下基板210和上基板220之间。
换句话说，第一间隔物250通过设置在第一间隔物250上表面的粘合层263连接到上基板220的下铜层223的下表面，并且通过设置在第一间隔物250的下表面的粘合层264连接到功率半导体元件230的上表面。
此外，第二间隔物255通过设置在第二间隔物255上表面的粘合层265的连接到上基板220的下铜层223的下表面，并且通过设置在第二间隔物255下表面的粘合层266连接到下基板210的上铜层212的上表面。
因此，上基板220通过粘合层263和265连接到第一间隔物250和第二间隔物255。
粘合层260、261、262、263、264、265和266可以由焊接型粘合材料制成，但不限于此，并且相关领域中公知的所有粘合材料，例如导电/非导电环氧树脂等，也可以使用。
最后，如上所述构成的功率模块封装200，通过使用模制材料270暴露第一引线框240和第二引线框245的一些部分并且包围和覆盖其剩余部分来完成。
此外，根据本发明实施例，功率模块封装200还包括带280，并且带280设置在下基板210的上表面上，具体是下基板210的上铜层212，并以预定距离与功率半导体元件230间隔开，以便对应于第二间隔物255。
因此，由于设置在第二间隔物255的下表面上以便连接第二间隔物255的粘合层266，被布置成对应于带280，因此粘合层266设置成周围带280的形状的形式。
具体地，带280的上表面与第二间隔物255的下表面接触，以形成第二间隔物255由带280支撑的形状。于此，在粘接到下基板210后，带280可被压缩以安装在其上。
其结果是，无论外界条件如何，带280和第二间隔物255的总厚度可以保持恒定而没有变化，并且可以仅根据压缩的程度相对于带280而变化。
同时，厚度T1和T2之间差的生成的问题是由加工误差导致的图1中所示的传统功率半导体元件130的厚度不均匀引起的，但厚度T3和T4之间所产生的厚度不均匀的问题可以通过根据本发明图2中所示的功率半导体元件230的厚度变化改变相对于带280的压缩度来解决。
此外，在如图1所示的相关技术中，由于焊料166的厚度变化，焊料166和第二间隔物155的总厚度是不均匀的，但如图2所示第二间隔物255是由本发明的带280支撑，使得带280和第二间隔物255的总厚度被均匀地保持而不影响粘合层266。
至此，已经说明了根据本发明实施例的功率模块封装的结构。下文中，将参照附图说明一种用于制造根据本发明实施例的功率模块封装的方法。
图3A至3E是示出了根据本发明实施例的功率模块封装的制造过程的视图。
参考图3A至3E，功率半导体元件230和带280首先被安装在下基板210上(图3A)。于此，带280可以在已经安装了功率半导体元件230后进行安装，然而，可选地，功率半导体元件230可在安装带280后进行安装。
于此，功率半导体元件230可以通过使用粘合层260焊接安装在下基板210的上表面上，带280可以通过粘接安装在下基板210的上表面上。
具体地，带280的安装可以通过将带280粘接到第二间隔物255要被安装的位置和压缩粘接的带280来进行。
于此，相对于该带280的压缩度可以变化，并且该带280的压缩度可以根据工艺条件，例如功率半导体元件230的厚度来确定。
此后，要进行引线框240和245的安装和导线W的粘接(图3B)。于此，引线框架240和245通过粘合层261和262安装在下基板210的上表面上，并且具体地，第一引线框140安装在下基板210的图案215上。
并且，粘接导线W，以将功率半导体元件230连接到图案215。换句话说，导线W的一端粘接至功率半导体元件230，而其另一端粘接至图案215。
然后，进行间隔物250和255的安装(图3C)。于此，第一间隔物250通过粘合层264被安装在功率半导体元件230的上表面上，并且第二间隔物255通过粘合层266被安装在带280的上部。
具体地，在第二间隔物255的安装中，第二间隔物255的下表面被安装成与带280的上表面接触，使得第二间隔物255由带280支撑。
因此，间隔物250和255的安装是通过如下进行的，将粘合层264涂敷在功率半导体元件230的上表面，将粘合层266涂敷在功下基板210上以包围所述带280，然后将间隔物250和255设置在粘合层264和266上。
然后，上基板220被连接到下基板210(图3D)，使用模制材料270暴露出第一引线框架240和第二引线245框的一些部分，并且要将其剩余部分模制成被包围，使得功率模块封装200被制成。
同时，为了将上基板220连接到下基板210，在上基板220对应于间隔物250和255的位置处涂覆粘合层263和265，并且在粘合层263和265已经连接到间隔物250和255的状态下，上基板220和下基板210彼此连接。
虽然参照实施例已经示出并描述了根据本发明的功率模块封装及其制造方法，本发明的范围并不限于特定的实施例，并且本领域技术人员将理解在这些实施例中可以做出替代、改变和修改，而不脱离本公开的原理的精神和范围。
因此，本文所公开的实施例和附图，在某种意义上不应理解为限制本发明的技术概念，除非是对它们的解释，并且技术概念的范围不限于这些实施例和附图。本发明的范围应当通过所附权利要求，以及这些权利要求享有的等同物的全部范围进行解释。

Claims (11)

1.一种功率模块封装，包括：
下基板，所述下基板上形成有图案；
功率半导体元件和带，所述功率半导体元件和所述带彼此以预定距离分隔开从而安装在所述下基板的上表面上；
第一间隔物，通过第一粘合层连接至所述功率半导体元件的上部；
第二间隔物，通过第二粘合层连接至所述带的上部；以及
上基板，通过第三粘合层连接至所述第一间隔物和所述第二间隔物每个的上部，
其中，所述第二间隔物由所述带支撑，根据所述带的压缩的程度，使得所述带和所述第二间隔物的总厚度保持恒定。
2.如权利要求1所述的功率模块封装，其中，所述第二间隔物的下表面与所述带的上表面接触，使得所述第二间隔物由所述带支撑。
3.如权利要求1所述的功率模块封装，其中，所述第一粘合层形成在所述功率半导体元件的所述上部，并且所述第二粘合层形成为围绕所述带。
4.如权利要求1所述的功率模块封装，其中，所述功率半导体元件通过焊接安装在所述下基板上，并且所述带通过粘接安装在所述下基板上。
5.一种用于制造功率模块封装方法，包括：
将功率半导体元件和带安装在下基板上；
将第一粘合层涂覆在所述功率半导体元件的上表面上，将第二粘合层涂覆为围绕所述带；
将第一间隔物安装在所述第一粘合层上，将第二间隔物安装在所述第二粘合层上；以及
使用第三粘合层将上基板连接至所述下基板，
其中，所述第二间隔物由所述带支撑，根据所述带的压缩的程度，使得所述带和所述第二间隔物的总厚度保持恒定。
6.如权利要求5所述的方法，进一步包括：
将第一和第二引线框安装在所述下基板上；和
使用导线将所述第一引线框电连接至所述功率半导体元件，
其中，所述安装和所述连接是在将所述功率半导体元件和所述带安装至所述下基板上与将所述第一粘合层涂覆在所述功率半导体元件的上表面上并且将所述第二粘合层涂覆为围绕所述带之间进行的。
7.如权利要求5所述的方法，其中，所述功率半导体元件和所述带的安装，在安装所述功率半导体元件之后安装所述带。
8.如权利要求5所述的方法，其中，所述功率半导体元件和所述带的安装，在安装所述带之后安装所述功率半导体元件。
9.如权利要求5所述的方法，其中，所述功率半导体元件和所述带的安装，使用焊接将所述功率半导体元件安装在所述下基板上，并且使用粘接将所述带安装在所述下基板上。
10.如权利要求5所述的方法，其中，所述功率半导体元件和所述带的安装中所述带的安装，是通过将所述带粘接至所述下基板并且压缩所述粘接的带而进行的。
11.如权利要求5所述的方法，其中，将所述第二间隔物安装在所述第二粘合层上，将所述第二间隔物的下表面接触所述带的上表面，使得所述第二间隔物由所述带支撑。
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