US9271397B2 - Circuit device - Google Patents
Circuit device Download PDFInfo
- Publication number
- US9271397B2 US9271397B2 US13/878,724 US201113878724A US9271397B2 US 9271397 B2 US9271397 B2 US 9271397B2 US 201113878724 A US201113878724 A US 201113878724A US 9271397 B2 US9271397 B2 US 9271397B2
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- US
- United States
- Prior art keywords
- circuit board
- circuit
- case material
- circuit device
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 111
- 239000000919 ceramic Substances 0.000 claims abstract description 77
- 229920005989 resin Polymers 0.000 claims abstract description 27
- 239000011347 resin Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 67
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000007789 sealing Methods 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims 3
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 2
- 239000011147 inorganic material Substances 0.000 abstract description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 31
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
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- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
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- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Definitions
- a preferred embodiment of the invention relates to a circuit device, and specifically, relates to a circuit device in which a power semiconductor element for switching a high current is mounted on the upper surface of a circuit board.
- a predetermined electric circuit is formed such that a conductive pattern 103 is formed on the surface of a rectangular substrate 101 with an insulating layer 102 interposed therebetween, and circuit elements are fixed to the conductive pattern 103 .
- a semiconductor element 105 A is fixed thereto.
- an electrode formed on an upper surface of the semiconductor element 105 A is connected to the desired conductive pattern 103 through a fine metal wire 114 .
- a lead 104 is connected to a pad 109 made of the conductive pattern 103 formed in a periphery part of the substrate 101 , and functions as an external terminal.
- a sealing resin 108 has a function of sealing the electric circuit formed on the surface of the substrate 101 .
- a case material 111 has a frame-like shape, and abuts on the side surfaces of the substrate 101 , whereby a space for filling the sealing resin 108 is formed on the upper surface of the substrate 101 .
- a manufacturing method of the hybrid integrated circuit device 100 of the configuration mentioned above is as follows. Firstly, the conductive pattern 103 having a predetermined shape is formed on the upper surface of the substrate 101 , the upper surface coated with the insulating layer 102 made of a resin. Next, a circuit element such as the semiconductor element 105 A is placed on the upper surface of the substrate 101 , and the predetermined conductive pattern 103 and the semiconductor element 105 A are electrically connected to each other. In addition, the lead 104 is fixed to the conductive pattern 103 formed in a pad shape. Next, the case material 111 is attached, and the liquid or semisolid sealing resin 108 is injected into a space surrounded by the case material 111 and then is cured by heating, thereby sealing the semiconductor element 105 A and the fine metal wire 114 with the resin.
- Patent Document 1 Japanese Patent Application Publication No. 2007-036014
- the hybrid integrated circuit device 100 mentioned above has a problem that the breakdown voltage of the insulating layer 102 is not sufficiently high in the case where a circuit (for example, a boost chopper circuit) which boosts the voltage to about several hundred volts to several thousand volts is assembled on the upper surface of the substrate 101 .
- a circuit for example, a boost chopper circuit
- the upper surface of the substrate 101 is coated with the insulating layer 102 having a thickness of about 100 ⁇ m, and the insulating layer 102 is made of an epoxy resin into which a filler such as alumina is mixed.
- the conductive pattern 103 connected to the circuit elements such as the semiconductor element 105 A and the substrate 101 made of a metal such as aluminum are insulated from each other with the insulating layer 102 .
- the epoxy resin as a main material of the insulating layer 102 has a low dielectric strength, there arises a problem of a short circuit between the conductive pattern 103 and substrate 101 due to a dielectric breakdown of the insulating layer 102 when the conductive pattern 103 receives a high voltage of about several hundred volts to several thousand volts.
- the insulating layer 102 can secure the breakdown voltage, but has such a high thermal resistance that there arises another problem that the heat generated by the semiconductor element 105 A during operation is poorly dissipated to the outside.
- the preferred embodiment of the invention was made in view of the problems described above, and a main objective of the preferred embodiment of the invention is to provide a circuit device having both high heat dissipation property and high voltage endurance.
- a circuit device in the preferred embodiment of the invention includes: a circuit board made of a metal; an island made of a metal film and provided on an upper surface of the circuit board; a fixation substrate made of a ceramic and fixed to the island with a fixing material; and an semiconductor element mounted on an upper surface of the fixation substrate.
- a fixation substrate made of a ceramic is placed on an upper surface of a circuit board made of a metal such as aluminum, and a semiconductor element such as a power transistor is mounted on an upper surface of the fixation substrate.
- the circuit board is insulated from the semiconductor element by the ceramic made of an inorganic material and having a high breakdown voltage. Accordingly, even when the semiconductor element receives a high voltage of about several thousand volts, a short circuit between the circuit board and the semiconductor element can be prevented.
- FIG. 1 depicts views of a circuit device according to a preferred embodiment of the invention
- FIG. 1A is a cross-sectional view thereof
- FIG. 1B is a cross-sectional view illustrating an enlarged portion where circuit elements are mounted.
- FIG. 2 depicts views of the circuit device in the preferred embodiment of the invention
- FIG. 2A is a plan view thereof
- FIG. 2B is a cross-sectional view thereof.
- FIGS. 3A and 3B are plan views illustrating enlarged portions of the circuit device in the preferred embodiment of the invention.
- FIG. 4A is a circuit diagram illustrating a solar power generation system in which a hybrid integrated circuit device in the preferred embodiment of the invention is incorporated
- FIG. 4B is a partially enlarged circuit diagram.
- FIG. 5 depicts views illustrating a manufacturing method of the circuit device in the preferred embodiment of the invention
- FIG. 5A is a plan view
- FIG. 5B is a cross-sectional view
- FIG. 5C is an enlarged cross-sectional view.
- FIG. 6 depicts views illustrating the manufacturing method of the circuit device in the preferred embodiment of the invention
- FIG. 6A is a plan view
- FIG. 6B is a cross-sectional view
- FIG. 6C is an enlarged cross-sectional view.
- FIG. 7 depicts views illustrating the manufacturing method of the circuit device in the preferred embodiment of the invention
- FIG. 7A to FIG. 7C are cross-sectional views.
- FIG. 8 is a cross-sectional view illustrating a circuit device in the background art.
- a hybrid integrated circuit device 10 With reference to FIG. 1 to FIG. 3 , the structure of a hybrid integrated circuit device 10 will be explained as an example of a circuit device.
- the hybrid integrated circuit device 10 is a circuit device in which a hybrid integrated circuit including multiple circuit elements is assembled on an upper surface of a circuit board 12 .
- the hybrid integrated circuit device 10 includes ceramic substrates 22 placed on the upper surface of the circuit board 12 made of a metal, and a transistor 34 and a diode 36 (semiconductor elements) which are mounted on an upper surface of the ceramic substrate 22 (fixation substrate).
- a frame-shaped case material 14 is placed on the upper surface of the circuit board 12 , and a sealing resin 16 is filled in a space surrounded by the case material 14 .
- a substrate 42 provided with signal leads 44 is disposed above the circuit board 12 .
- an output lead 28 and the like are integrally embedded in the case material 14 , and semiconductor elements including the transistor 34 are electrically connected to the output lead 28 through fine metal wires 26 .
- the circuit board 12 is a circuit board containing aluminum (Al), copper (Cu), or the like as a main material.
- Al aluminum
- Cu copper
- the circuit board 12 has a thickness of, for example, about 0.5 mm or more and 2.0 mm or less.
- Anodized films are formed on both main surfaces of the circuit board 12 , and the upper surface of the circuit board 12 is coated with an insulating layer 50 .
- the ceramic substrate 22 is made of an inorganic solid material such as Al 2 O 3 (alumina), AN (aluminum nitride), or the like, and has a thickness of, for example, 0.25 mm or more and 1.0 mm or less.
- the ceramic substrate 22 has a function of insulating the transistor 34 mounted on the upper surface thereof from the circuit board 12 .
- the structure of fixing the ceramic substrate 22 to the circuit board 12 will be described later with reference to FIG. 1B .
- the heat generated by the transistor 34 or the diode 36 during operation is dissipated to the outside through the ceramic substrate 22 and the circuit board 12 .
- the case material 14 is formed in a frame shape by injection molding of a resin material such as an epoxy resin. Moreover, the case material 14 is fixed to the upper surface of a periphery part of the circuit board 12 to form a space for resin-sealing of the circuit elements such as the transistor 34 on the upper surface of the circuit board 12 .
- the output lead 28 through which an output signal of a high current switched by the transistor 34 passes is integrally incorporated in the case material 14 .
- Such a structure is implemented by injection molding of the resin material of the case material 14 with the output lead 28 .
- wiring leads 40 each shaped in an L-character are disposed inside the case material 14 , and the wiring leads 40 are connected to control electrodes of the transistors 34 through the fine metal wires 26 .
- multiple output leads 28 incorporated in the case material 14 are disposed on the same plane.
- Portions of the wiring leads 40 around the upper ends are fixed by being inserted into through-holes of the substrate 42 .
- the circuit elements such as the transistor 34 which are disposed on the upper surface of the circuit board 12 are electrically connected to the substrate 42 through the wiring leads 40 .
- Multiple signal leads 44 are disposed on the substrate 42 , and the signal leads 44 function as external connection terminals.
- the substrate 42 is formed of, for example, a glass epoxy substrate having a thickness of about 1 mm and having conductive patterns formed on the main surface thereof.
- the sealing resin 16 is made of a resin material, such as an epoxy, into which a filler such as alumina is filled, and is filled into the space surrounded by the case material 14 on the upper surface of the circuit board 12 . Further, the sealing resin 16 seals the ceramic substrate 22 , the transistor 34 , the diode 36 , the fine metal wires 26 , the substrate 42 , and the like.
- the structure of fixing the ceramic substrate 22 to the circuit board 12 will be explained.
- the circuit board 12 is a circuit board made of aluminum
- the upper surface and the lower surface of the circuit board 12 are respectively coated with oxide films 46 and 48 formed of anodized aluminum by anodic oxidation.
- the upper surface of the circuit board 12 is coated with the thin insulating layer 50 as mentioned above.
- the insulating layer 50 may be omitted, and an island 18 may be formed directly on an upper surface of the oxide film 46 which coats the upper surface of the circuit board 12 . This further improves the heat dissipation property.
- the island 18 having a thickness of about 50 um is formed by etching a metal film such as copper in a predetermined shape.
- the island 18 is not used as wiring for an electric signal to pass.
- the island 18 is used for improving the wettability of a fixing material 38 used to fix the ceramic substrate 22 .
- the lower surface of the ceramic substrate 22 is coated with a metal film 20 having a thickness of about 250 ⁇ m.
- the metal film 20 is formed to entirely cover all over the lower surface region of the ceramic substrate 22 .
- solder is used as the fixing material 38 , the solder is excellently welded to the entire lower surface region of the ceramic substrate 22 .
- the solder is excellently welded also to the island 18 provided on the upper surface of the circuit board 12 .
- the ceramic substrate 22 is firmly fixed to the circuit board 12 with the fixing material 38 .
- the solder which is a metal excellent in thermal conductivity is employed as the fixing material 38 to allow the heat generated by the transistor 34 during operation to be excellently conducted to the circuit board 12 .
- a conductive pattern 24 in which a metal film having a thickness of about 250 ⁇ m is etched in a predetermined shape is formed. Further, the transistor 34 or the diode 36 is mounted on the conductive pattern 24 with the conductive fixing material such as the solder.
- the conductive pattern 24 is configured to include islands on which the circuit elements such as the transistor 34 are mounted, a wiring section for connecting the elements to each other, and a pad for bonding a fine metal wire, and the like.
- the transistor 34 As for the transistor 34 , a MOSFET, an IGBT, or a bipolar transistor is employed.
- a power transistor which performs switching of a high current for example, having a current value of one ampere or more is employed.
- An electrode provided on the lower surface of the transistor 34 is connected to the conductive pattern 24 with the conductive fixing material such as the solder.
- the diode 36 has an electrode provided on the upper surface thereof and connected to the transistor 34 with the fine metal wire 26 , and an electrode provided on the lower surface thereof and connected to the conductive pattern 24 with the conductive fixing agent such as the solder.
- the transistor 34 is an IGBT
- an emitter electrode provided on the upper surface of the transistor 34 is connected to an anode electrode provided on the upper surface of the diode through the fine metal wire 26 .
- a collector electrode provided on the lower surface of the transistor 34 is connected to a cathode electrode provided on the lower surface of the diode through the conductive pattern 24 .
- the details of the connection structure will be described later with reference to the circuit diagram illustrated in FIG. 4 .
- the fine metal wires 26 mentioned above and used for the electric connection between the transistors and the like are made of, for example, aluminum having a diameter of about 200 ⁇ m.
- ribbon bonding in which a metal foil such as aluminum is formed in a ribbon state may be employed.
- the insulating layer 50 made of a resin is provided on the upper surface of the circuit board 12 .
- the insulating layer 50 has a thickness of, for example, 60 ⁇ m (50 ⁇ m or more and 70 ⁇ m or less).
- the material of the insulating layer 50 is similar to that in the background art, and obtained such that a filler such as alumina is highly filled into a resin material such as an epoxy resin.
- the upper surface of the circuit board 12 is coated with the insulating layer 50 in order to easily form the island 18 .
- the insulating layer 50 made of an organic material is interposed between the circuit board 12 and the island 18 to improve the adhesion strength between the island 18 and the circuit board 12 .
- the breakdown voltage of the insulating layer 50 formed to be thin is lower than that in the background art.
- the island 18 formed on the upper surface of the insulating layer 50 is not connected to the transistor 34 , the high breakdown voltage is not necessary for the insulating layer 50 in the embodiment.
- the thermal conductivity of the thin insulating layer 50 in the embodiment is 4 W/mK or more, which is four or more times the thermal conductivity of the thick insulating layer 102 having a thickness of about 200 ⁇ m. Accordingly, it is possible to excellently dissipate the heat generated in the transistor 34 to the outside through the insulating layer 50 .
- FIG. 2A is a plan view illustrating the hybrid integrated circuit device 10
- FIG. 2B is a cross-sectional view thereof.
- multiple ceramic substrates are disposed on the upper surface of the circuit board 12 .
- seven ceramic substrates 22 A- 22 G are fixed to the upper surface of the circuit board 12 , and each predetermined circuit element is mounted on the upper surface of each of the ceramic substrates 22 A- 22 G.
- Transistors including an IGBT and the like and diodes are mounted on the upper surfaces of the ceramic substrates 22 A to 22 D. Further, transistors are mounted on the ceramic substrate 22 F, diodes are mounted on the ceramic substrate 22 E, and resistances are mounted on the ceramic substrate 22 G. The resistance is for detecting a value of current which passes through an output lead 33 .
- output leads integrally incorporated in the case material 14 will be explained. With reference to FIG. 2A , six output leads are incorporated here.
- the output lead 28 is a lead for mutually connecting the transistors inside the case material 14 .
- the output leads 30 and 33 are leads through which direct-current power supplied from the outside passes.
- the output leads 29 , 31 , and 32 are leads for outputting alternating-current power converted by a built-in inverter circuit.
- a portion of each of the leads exposed to the outside may be provided with a through-hole for a screw.
- the wiring leads 40 are fixed to stepped portions provided around both right and left ends of the case material 14 .
- the case material 14 of the embodiment not only has a function of securing an internal space into which the sealing resin 16 is filled, above the circuit board 12 .
- the case material 14 of the embodiment but also has a function of fixing the output leads through which a high-voltage current passes to predetermined portions.
- the case material 14 of the embodiment also has a function of insulating the output leads from the circuit board 12 .
- the circuit elements such as transistors mounted on the upper surface of the ceramic substrates 22 B and 22 F are connected to the output leads 30 and 28 through the fine metal wires.
- electrodes provided on the upper surface of the transistor 34 are connected to the wiring leads 40 through the fine metal wires 26 .
- the hybrid integrated circuit device 10 of the embodiment no conductive pattern is formed on the upper surface of the circuit board 12 . Accordingly, the elements are electrically connected to each other via the output leads 28 and 30 embedded in the case material 14 , the wiring leads 40 and the fine metal wires 26 . This improves the insulation property while eliminating the high-voltage resistant insulating layer which is made of a resin and coats the upper surface of the substrate in the background art.
- the case material 14 which coats the lower surfaces of the output leads 28 and 30 is thick with a thickness of about 1.0 mm or more, whereby a sufficient voltage endurance can be obtained.
- FIG. 3A and FIG. 3B are plan views illustrating partial enlarged portions of the circuit board 12 . Note that, in the drawings, hatched regions indicate conductive patterns formed on the upper surfaces of the ceramic substrates.
- the ceramic substrates 22 F and 22 E are adjacent to but separated from each other by a predetermined distance.
- elements mounted on the ceramic substrates 22 F and 22 E constitute a converter circuit illustrated in FIG. 4A .
- Two transistors Q 1 s are fixed to the conductive pattern disposed on the upper surface of the ceramic substrate 22 F via a conductive jointing material such as the solder.
- a conductive jointing material such as the solder.
- the transistor Q 1 an IGBT or a MOSFET is employed.
- collector electrodes on the lower surfaces of the transistors are connected through the conductive pattern formed on the upper surface of the ceramic substrate 22 F.
- emitter electrodes formed on the upper surfaces of the two transistors Q 1 s are connected to the output lead 28 through the multiple fine metal wires 26 .
- gate electrodes provided on the upper surfaces of the transistors Q 1 s are connected to the wiring leads 40 embedded in the case material 14 through the fine metal wires 26 .
- diodes D 1 s are mounted on the conductive pattern formed on the upper surface of the ceramic substrate 22 E via the conductive jointing material such as the solder.
- Anode electrodes formed on the upper surfaces of the diodes D 1 s are connected to the collector electrodes of the transistors Q 1 s through the fine metal wires 26 and the conductive pattern of the ceramic substrate 22 F.
- cathode electrodes formed on the lower surfaces of the diodes D 1 s are connected to the conductive pattern of the ceramic substrate 22 E through the output lead 30 and the fine metal wires 26 .
- transistors and diodes constituting an inverter are mounted on the upper surfaces of the ceramic substrates 22 A and 22 B.
- two transistors Q 2 s and four diodes D 2 s are connected to the same conductive pattern via the solder. Accordingly, collector electrodes provided on the lower surfaces of the transistors Q 2 s are electrically connected to cathode electrodes provided on the lower surfaces of the diodes D 3 s. Moreover, gate electrodes disposed on the upper surfaces of the transistors Q 2 s connected to the wiring leads 40 of the case material 14 through the conductive patterns of the ceramic substrate 22 A and the fine metal wires 26 .
- emitter electrodes disposed on the upper surfaces of the transistors Q 2 s are connected to anode electrodes provided on the upper surfaces of the diodes D 3 s through the fine metal wires 26 , and is further connected to the conductive pattern of the ceramic substrate 22 B. Accordingly, the electrodes provided on the upper surfaces of the transistors Q 2 s and the diodes D 3 s mounted on the ceramic substrate 22 A are connected to electrodes provided on the lower surfaces of transistors Q 3 s and diodes D 3 s mounted on the adjacent ceramic substrate 22 B.
- the upper surface of the ceramic substrate 22 A is provided with a pattern for element mounting and multiple patterns for connecting fine metal wires to each other. Further, the same conductive patterns are formed on the ceramic substrates 22 A- 22 D on which elements constituting an inverter circuit are mounted. Moreover, although the ceramic substrate 22 E is not a substrate on which the elements of the inverter are mounted, a ceramic pattern having the same conductive pattern as those of the ceramic substrates 22 A- 22 D is employed. Therefore, providing the common pattern shape to the ceramic substrates reduces the kinds of pattern shapes of the ceramic substrates, thereby making it possible to reduce the manufacturing cost.
- the configuration of conductive patterns provided to the ceramic substrate 22 B and elements mounted thereon are similar to those of the ceramic substrate 22 A.
- rear surface electrodes of the two transistors Q 3 s and the four the diodes D 3 s are connected to the upper surface of one conductive pattern via the solder, and emitter electrodes of the transistors Q 3 s and anode electrodes of the diodes D 3 s are connected to the output lead 28 through the fine metal wires 26 .
- gate electrodes which are control electrodes of the transistors Q 3 s are connected to the wiring leads 40 through the conductive patterns on the ceramic substrate 22 B and the fine metal wires.
- the conductive pattern on which the transistors Q 3 s and the like are mounted is connected to the output lead 29 through the multiple fine metal wires 26 .
- the pattern shape of the ceramic substrates 22 C and 22 D, elements mounted on the ceramic substrates 22 C and 22 D, and the connection structure thereof, illustrated in FIG. 2A are similar to those of the ceramic substrates 22 A and 22 B mentioned above.
- two transistors and four diodes are connected to each of the upper surfaces of the ceramic substrates 22 C and 22 D.
- the elements placed on the upper surface of the ceramic substrate 22 C are connected to the elements placed on the ceramic substrate 22 D through the fine metal wires.
- the elements mounted on each of the upper surfaces of the ceramic substrates 22 C and 22 D are electrically connected to the output leads and the wiring leads through the fine metal wires.
- FIG. 4A is a circuit diagram illustrating an overall solar cell generation system
- FIG. 5B is a circuit diagram illustrating the transistor Q 3 included in the system in detail.
- the generation system illustrated in the drawing is provided with a solar cell 70 , a solar cell opening and closing unit 72 , a boost chopper 74 , an inverter 76 , and relays 78 and 80 .
- the electric power generated by the generation device of such a configuration is supplied to an electric power system 82 or a load 84 for self-sustaining operation.
- a converter 86 and the inverter 76 which are parts of the boost chopper 74 are incorporated in the hybrid integrated circuit device 10 of the embodiment.
- the solar cell 70 is a converter to convert radiated light into electric power to be outputted, and outputs the direct-current electric power. Although one solar cell 70 is illustrated here, multiple solar cells 70 connected in series may be employed.
- the solar cell opening and closing unit 72 is provided with a function of collecting the electricity generated in the solar cell 70 and preventing backflow thereof, and supplying a direct-current current to the boost chopper 74 .
- the boost chopper 74 is provided with a function of boosting a voltage of the direct-current power supplied from the solar cell 70 .
- the transistor Q 1 which is a MOSFET, repeats an ON operation and an OFF operation periodically to boost the direct-current power at the voltage of about 250 V generated by the solar cell 70 to the direct-current power of about 370 V.
- the boost chopper 74 is provided with a coil L 1 connected in series to an output terminal of the solar cell, and the transistor Q 1 connected between the coil L 1 and a ground terminal. Further, the direct-current power boosted by the coil L 1 is supplied to the inverter 76 of the next stage via the diode D 1 and a smoothing capacitor C 1 for a backflow device.
- the transistors Q 1 s and the diodes D 1 s included in the boost chopper 74 are placed on the upper surfaces of the ceramic substrates 22 F and 22 E illustrated in FIG. 2A . Moreover, the switching of the transistor Q 1 is performed on the basis of control signals externally supplied through the signal leads 44 and the wiring leads 40 , illustrated in FIG. 1A .
- the direct-current power boosted by the boost chopper 74 is converted into alternating-current power having a predetermined frequency by the inverter 76 .
- the inverter 76 is provided with the two transistors Q 2 and Q 4 connected in series between the output terminal of the boost chopper 74 , and two transistors Q 3 and Q 5 connected in series as well. Moreover, the switching of these transistors are controlled by a control signal supplied from the outside, the transistors Q 2 and Q 3 and the transistors Q 4 and Q 5 are complementarily switched. Further, the alternating-current power set to the predetermined frequency by these switching is outputted to the outside from a connection point between the transistors Q 2 and Q 3 and a connection point between the transistors Q 4 and Q 5 .
- the two-phase inverter circuit consisting of four transistors is constructed.
- the transistors Q 2 to Q 5 constituting the inverter 76 are fixed to the ceramic substrates 22 A, 22 B, 22 C, and 22 D illustrated in FIG. 2A .
- the alternating-current power converted by the inverter 76 is supplied to the commercial electric power system 82 or the load 84 for self-sustaining operation.
- the relay 78 is interposed between the electric power system 82 and the inverter 76 , the relay 78 is in a conduction state at the normal time, and the relay 78 is in a cut-off state if abnormality is detected either one of electric power system 82 and the inverter 76 .
- the relay 80 is interposed also between the inverter 76 and the load for self-sustaining operation, and the supply of electric power is cut off by the relay 80 in an abnormal state.
- the elements included in the boost chopper 74 and the inverter 76 are fixed to the upper surfaces of the ceramic substrates 22 illustrated in FIG. 1 . Accordingly, when the elements receive the voltage at several hundred volts to several thousand volts without a high-breakdown voltage insulating resin material being interposed between these elements and the circuit board 12 , no short circuit is generated between the elements and the circuit board 12 .
- the transistor Q 3 which is one of the transistors included in the inverter 76 mentioned above is configured to include transistors Q 31 and Q 32 , which are two IBGTs, and four diodes D 31 , D 32 , D 33 , and D 34 which are inversely connected to main electrodes of these transistors.
- the transistor Q 31 and the transistor Q 32 are connected to each other in parallel. Specifically, gate electrodes, emitter electrodes, and collector electrodes of the transistor Q 31 and the transistor Q 32 are connected in common. Thus, the larger current capacity can be obtained than in the case of one transistor.
- anode electrodes of the diodes D 31 , D 32 , D 33 , and D 34 are connected to the emitter electrodes of the transistor Q 31 and the transistor Q 32 . Further, cathode electrodes of these diodes are connected to the collector electrodes of the transistor Q 31 and the transistor Q 32 .
- FIG. 5A is a plan view illustrating this process
- FIG. 5B and FIG. 5C are cross-sectional views illustrating this process.
- the circuit board 12 to be prepared is a circuit board made of a thick metal, such as aluminum and copper, having a thickness of about 1 mm to 3 mm.
- a thick metal such as aluminum and copper
- the upper surface and the lower surface of the circuit board 12 are coated with anodized films.
- the upper surface of the circuit board 12 is coated with the insulating layer 50 having a thickness of about 60 ⁇ m or less. This allows an adhesion strength of an island 18 B and the like to the circuit board 12 to be improved.
- the circuit board 12 is molded in a predetermined shape by performing press processing or grinding processing with respect to a large-sized circuit board.
- Islands 18 A- 18 G are formed by etching the copper foil stuck on the upper surface of the circuit board 12 in a predetermined shape.
- the islands 18 A- 18 G are not for circuit elements such as transistors being mounted thereon but for improving the wettability of solder used when ceramic substrate is mounted, which is described later.
- the upper surface and the lower surface of the circuit board 12 are respectively coated with the oxide films 46 and 48 formed of anodized aluminum by anodic oxidation.
- the upper surface of the oxide film 46 is coated with the insulating layer 50 made of a resin material, and on the upper surface of the insulating layer 50 , the island 18 B is formed.
- the island 18 B is formed on the upper surface of the insulating layer 50 which coats the upper surface of the circuit board 12 . Accordingly, although the insulating layer 50 is present between the circuit board 12 and the island 18 B, because the insulating layer 50 formed to be thin has an extremely high thermal conductivity, therefore the thermal conductivity of the entire substrate is extremely high.
- FIG. 6A is a plan view illustrating this process
- FIG. 6B and FIG. 6C are cross-sectional views.
- the ceramic substrates 22 A- 22 G on which predetermined circuit elements such as transistors and diodes are mounted are fixed to the upper surface of the circuit board 12 .
- the ceramic substrates 22 A- 22 G are respectively fixed to the upper surfaces of the islands 18 A- 18 G formed on the upper surface of the circuit board 12 in the previous process.
- the conductive pattern 24 and the metal film 20 are respectively formed on the upper surface and the lower surface of the ceramic substrate 22 . Further, the metal film 20 with which the lower surface of the ceramic substrate 22 is coated is fixed to the island 18 provided on the upper surface of the circuit board 12 with the fixing material 38 such as solder. The metal film 20 is provided to entirely cover all over the lower surface of the ceramic substrate 22 , and thereby the fixing material 38 is strongly adhered on the entire lower surface region of the ceramic substrate 22 . Accordingly, the ceramic substrate 22 is firmly joined to the circuit board 12 .
- the case material 14 is bonded to the upper surface periphery part of the circuit board 12 .
- the output leads and the wiring leads are incorporated in advance.
- the case material 14 is bonded to the upper surface of the circuit board 12 with a bonding material such as an epoxy resin.
- the circuit elements and the leads are electrically connected to each other by the fine metal wires 26 .
- the gate electrode of the transistor 34 fixed to the upper surface of the ceramic substrate 22 B is connected to the wiring lead 40 through the fine metal wire 26 .
- the emitter electrode disposed on the upper surface of the transistor 34 together with the anode electrode provided on the upper surface of the diode 36 , are connected to the output lead 30 .
- the transistor 34 mounted on the upper surface of the ceramic substrate 22 F is connected to the output lead 28 through the fine metal wires 26 .
- the fine metal wires made of aluminum having a diameter of about 200 ⁇ m are used for connection of the circuit elements.
- ribbon bonding in which a ribbon-shaped aluminum foil is used may be employed.
- the wiring leads 40 are inserted into holes of the substrate 42 . Accordingly, the wiring leads 40 are connected to the signal leads 44 provided to the substrate 42 through the conductive pattern formed on the surface of the substrate 42 .
- the sealing resin 16 is filled into a space surrounded by the case material 14 .
- a silicon resin or an epoxy resin is employed as the sealing resin 16 .
- a resin material into which a filler such as alumina is filled may be employed as the sealing resin 16 .
- the transistor 34 , the diode 36 , the fine metal wires 26 , the wiring leads 40 , the substrate 42 , and the like are resin-sealed by the sealing resin 16 .
- the hybrid integrated circuit device 10 illustrated in FIG. 1 is manufactured through the processes above.
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
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Abstract
Description
Claims (13)
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JP2010213696 | 2010-09-24 | ||
JP2010-213696 | 2010-09-24 | ||
PCT/JP2011/005211 WO2012039116A1 (en) | 2010-09-24 | 2011-09-15 | Circuit device |
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US20130286616A1 US20130286616A1 (en) | 2013-10-31 |
US9271397B2 true US9271397B2 (en) | 2016-02-23 |
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US (1) | US9271397B2 (en) |
JP (3) | JP6163305B2 (en) |
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JP6625037B2 (en) * | 2016-11-17 | 2019-12-25 | 三菱電機株式会社 | Semiconductor device and method of manufacturing semiconductor device |
CN108231604A (en) * | 2018-01-24 | 2018-06-29 | 韩德军 | A kind of manufacturing method of power semiconductor device |
CN108364940B (en) * | 2018-02-24 | 2020-07-07 | 江西源能电气技术有限公司 | Inverter circuit device for electric power |
CN108364943B (en) * | 2018-02-24 | 2020-10-23 | 泰州市元和达电子科技有限公司 | Packaging module of power conversion circuit |
CN116798882B (en) * | 2023-08-22 | 2024-01-30 | 哈尔滨工业大学(威海) | Manufacturing method of power module with double-sided heat dissipation structure |
Citations (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3497384A (en) * | 1967-08-31 | 1970-02-24 | Du Pont | Process of metalizing ceramic substrates with noble metals |
US4677540A (en) * | 1984-06-18 | 1987-06-30 | Fanuc Ltd | AC motor control panel |
US4831212A (en) * | 1986-05-09 | 1989-05-16 | Nissin Electric Company, Limited | Package for packing semiconductor devices and process for producing the same |
JPH04186869A (en) | 1990-11-21 | 1992-07-03 | Denki Kagaku Kogyo Kk | Metal plate base circuit board |
US5446318A (en) * | 1992-09-08 | 1995-08-29 | Hitachi, Ltd. | Semiconductor module with a plurality of power devices mounted on a support base with an improved heat sink/insulation plate arrangement |
US5753971A (en) * | 1995-06-19 | 1998-05-19 | Siemens Aktiengesellschaft | Power semiconductor module with terminal pins |
US5838057A (en) * | 1994-08-03 | 1998-11-17 | Texas Instruments Incorporated | Transistor switches |
EP0962974A2 (en) | 1998-05-28 | 1999-12-08 | Hitachi, Ltd. | Semiconductor device |
US6060772A (en) * | 1997-06-30 | 2000-05-09 | Kabushiki Kaisha Toshiba | Power semiconductor module with a plurality of semiconductor chips |
JP2000183212A (en) | 1998-12-10 | 2000-06-30 | Toshiba Corp | Insulating substrate and manufacture thereof and semiconductor device |
JP2004072003A (en) | 2002-08-09 | 2004-03-04 | Denki Kagaku Kogyo Kk | Multilayer circuit board having metal base, and hybrid integrated circuit using the same |
JP2007036014A (en) | 2005-07-28 | 2007-02-08 | Sanyo Electric Co Ltd | Circuit device |
US7291928B2 (en) * | 2002-08-30 | 2007-11-06 | Mitsubishi Denki Kabushiki Kaisha | Electric power semiconductor device |
US20080191340A1 (en) * | 2007-02-12 | 2008-08-14 | Thilo Stolze | Power Semiconductor Module And Method For Its Manufacture |
WO2008099952A1 (en) * | 2007-02-13 | 2008-08-21 | Toyota Jidosha Kabushiki Kaisha | Power conversion device |
US20080227302A1 (en) * | 2007-03-12 | 2008-09-18 | Honeywell International Inc. | Fibrous laminate interface for security coatings |
JP2009071064A (en) | 2007-09-13 | 2009-04-02 | Mitsubishi Electric Corp | Semiconductor device |
JP4319591B2 (en) | 2004-07-15 | 2009-08-26 | 株式会社日立製作所 | Semiconductor power module |
US20100109016A1 (en) * | 2007-04-17 | 2010-05-06 | Toyota Jidosha Kabushiki Kaisha | Power semiconductor module |
US20100127383A1 (en) * | 2008-11-25 | 2010-05-27 | Mitsubishi Electric Corporation | Power semiconductor module |
US20100193801A1 (en) * | 2007-11-20 | 2010-08-05 | Toyota Jidosha Kabushiki Kaisha | Solder material, method for manufacturing the same, joined body, method for manufacturing the same, power semiconductor module, and method for manufacturing the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3769228B2 (en) * | 2001-12-25 | 2006-04-19 | 三菱電機株式会社 | Power semiconductor device |
JP4075992B2 (en) * | 2003-05-07 | 2008-04-16 | トヨタ自動車株式会社 | Semiconductor module manufacturing method, semiconductor module, integrated motor using the same, and automobile equipped with the integrated motor |
JP2007227510A (en) * | 2006-02-22 | 2007-09-06 | Mitsubishi Electric Corp | Semiconductor device |
-
2011
- 2011-09-15 US US13/878,724 patent/US9271397B2/en active Active
- 2011-09-15 JP JP2012534925A patent/JP6163305B2/en active Active
- 2011-09-15 CN CN2011800562179A patent/CN103222053A/en active Pending
- 2011-09-15 WO PCT/JP2011/005211 patent/WO2012039116A1/en active Application Filing
-
2015
- 2015-02-23 JP JP2015032515A patent/JP2015144289A/en active Pending
-
2017
- 2017-05-31 JP JP2017107469A patent/JP2017195385A/en active Pending
Patent Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3497384A (en) * | 1967-08-31 | 1970-02-24 | Du Pont | Process of metalizing ceramic substrates with noble metals |
US4677540A (en) * | 1984-06-18 | 1987-06-30 | Fanuc Ltd | AC motor control panel |
US4831212A (en) * | 1986-05-09 | 1989-05-16 | Nissin Electric Company, Limited | Package for packing semiconductor devices and process for producing the same |
JPH04186869A (en) | 1990-11-21 | 1992-07-03 | Denki Kagaku Kogyo Kk | Metal plate base circuit board |
US5446318A (en) * | 1992-09-08 | 1995-08-29 | Hitachi, Ltd. | Semiconductor module with a plurality of power devices mounted on a support base with an improved heat sink/insulation plate arrangement |
US5838057A (en) * | 1994-08-03 | 1998-11-17 | Texas Instruments Incorporated | Transistor switches |
US5753971A (en) * | 1995-06-19 | 1998-05-19 | Siemens Aktiengesellschaft | Power semiconductor module with terminal pins |
US6060772A (en) * | 1997-06-30 | 2000-05-09 | Kabushiki Kaisha Toshiba | Power semiconductor module with a plurality of semiconductor chips |
EP0962974A2 (en) | 1998-05-28 | 1999-12-08 | Hitachi, Ltd. | Semiconductor device |
JP2000183212A (en) | 1998-12-10 | 2000-06-30 | Toshiba Corp | Insulating substrate and manufacture thereof and semiconductor device |
US20020066953A1 (en) | 1998-12-10 | 2002-06-06 | Yutaka Ishiwata | Insulating substrate including multilevel insulative ceramic layers joined with an intermediate layer |
JP2004072003A (en) | 2002-08-09 | 2004-03-04 | Denki Kagaku Kogyo Kk | Multilayer circuit board having metal base, and hybrid integrated circuit using the same |
US7291928B2 (en) * | 2002-08-30 | 2007-11-06 | Mitsubishi Denki Kabushiki Kaisha | Electric power semiconductor device |
JP4319591B2 (en) | 2004-07-15 | 2009-08-26 | 株式会社日立製作所 | Semiconductor power module |
JP2007036014A (en) | 2005-07-28 | 2007-02-08 | Sanyo Electric Co Ltd | Circuit device |
US20080191340A1 (en) * | 2007-02-12 | 2008-08-14 | Thilo Stolze | Power Semiconductor Module And Method For Its Manufacture |
WO2008099952A1 (en) * | 2007-02-13 | 2008-08-21 | Toyota Jidosha Kabushiki Kaisha | Power conversion device |
CN101606311A (en) | 2007-02-13 | 2009-12-16 | 丰田自动车株式会社 | Power-converting device |
US20100117570A1 (en) * | 2007-02-13 | 2010-05-13 | Toyota Jidosha Kabushiki Kaisha | Power conversion device |
US20080227302A1 (en) * | 2007-03-12 | 2008-09-18 | Honeywell International Inc. | Fibrous laminate interface for security coatings |
US20100109016A1 (en) * | 2007-04-17 | 2010-05-06 | Toyota Jidosha Kabushiki Kaisha | Power semiconductor module |
JP2009071064A (en) | 2007-09-13 | 2009-04-02 | Mitsubishi Electric Corp | Semiconductor device |
US20100193801A1 (en) * | 2007-11-20 | 2010-08-05 | Toyota Jidosha Kabushiki Kaisha | Solder material, method for manufacturing the same, joined body, method for manufacturing the same, power semiconductor module, and method for manufacturing the same |
US20100127383A1 (en) * | 2008-11-25 | 2010-05-27 | Mitsubishi Electric Corporation | Power semiconductor module |
Non-Patent Citations (3)
Title |
---|
International Search Report and Written Opinion dated Dec. 13, 2011, directed to International Application No. PCT/JP2011/005211; 14 pages. |
Note: Instead of a Machine Translation, the contents of WO 2008099952 A1 is best understood by the english version US Publication 2010/0117570. * |
The Search Report dated Mar. 21, 2015 for counterpart Chinese Patent Application No. 201180056217.9, 2 pages. |
Also Published As
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JPWO2012039116A1 (en) | 2014-02-03 |
JP2015144289A (en) | 2015-08-06 |
US20130286616A1 (en) | 2013-10-31 |
CN103222053A (en) | 2013-07-24 |
WO2012039116A1 (en) | 2012-03-29 |
JP2017195385A (en) | 2017-10-26 |
JP6163305B2 (en) | 2017-07-12 |
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