JP6983187B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
- Publication number
- JP6983187B2 JP6983187B2 JP2019028427A JP2019028427A JP6983187B2 JP 6983187 B2 JP6983187 B2 JP 6983187B2 JP 2019028427 A JP2019028427 A JP 2019028427A JP 2019028427 A JP2019028427 A JP 2019028427A JP 6983187 B2 JP6983187 B2 JP 6983187B2
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- Japan
- Prior art keywords
- wire
- solder layer
- wire bump
- bump
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 105
- 229910000679 solder Inorganic materials 0.000 claims description 119
- 239000000463 material Substances 0.000 claims description 50
- 229910045601 alloy Inorganic materials 0.000 claims description 28
- 239000000956 alloy Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 claims description 8
- 239000004020 conductor Substances 0.000 description 34
- 239000010949 copper Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 28
- 238000005476 soldering Methods 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 230000003111 delayed effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- -1 polybutylene terephthalate Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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Description
図1は、全体が100で表される、本発明の実施の形態1にかかる電力用半導体装置の断面図である。また、図2は、図1の破線で囲んだ部分Aの拡大断面図である。
ベース板1の上面には、半田層7により、絶縁基板3が固定されている。半田層7は、例えばSnからなる。
図5は、本発明の実施の形態2にかかる電力用半導体装置200の一部の拡大断面図であり、図1と同一符号は、同一または相当箇所を示す。電力用半導体装置200では、ベース板1と絶縁基板3の導体層3cとの間に、半田層7の材料と合金形成が可能なワイヤバンプ29が設けられている。
Claims (12)
- 金属層と、
前記金属層に、半田層を介して接合された半導体素子と、
前記半田層の面内方向に延在して設けられ、前記金属層と接合されたワイヤバンプと、を含み、
前記ワイヤバンプと前記半田層との界面に、前記ワイヤバンプの材料と前記半田層の材料との合金を有し、
前記ワイヤバンプは、1つのウェッジボンド接合部のみで前記金属層に接合された電力用半導体装置。 - 金属層と、
前記金属層に、半田層を介して接合された半導体素子と、
前記半田層の面内方向に延在して設けられ、前記金属層との接合部を有することなく、前記金属層の上に載置されたワイヤバンプと、を備え、
前記ワイヤバンプと前記半田層との界面に、前記ワイヤバンプの材料と前記半田層の材料との合金を有する電力用半導体装置。 - 金属層と、
前記金属層に、半田層を介して接合された半導体素子と、
前記半田層の面内方向に延在して設けられ、前記金属層と接合されたワイヤバンプと、を含み、
前記ワイヤバンプと前記半田層との界面に、前記ワイヤバンプの材料と前記半田層の材料との合金を有し、
前記ワイヤバンプは、その両端に前記金属層とのウェッジボンド接合部を有するボンディングワイヤである電力用半導体装置。 - 前記ワイヤバンプは前記半田層の亀裂の進展を抑制する請求項1〜3のいずれか1項に記載の電力用半導体装置。
- 前記ウェッジボンド接合部の間隔は、2.0mm以下である請求項3に記載の電力用半導体装置。
- 更に、ウェッジボンド接合部の間に、前記ボンディングワイヤが前記金属層に複数のステッチボンド接合部を有する請求項3に記載の電力用半導体装置。
- 前記ウェッジボンド接合部と前記ステッチボンド接合部との間隔、および隣接する前記ステッチボンド接合部の間隔は、それぞれ2mm以下であることを特徴とする請求項6に記載の電力用半導体装置。
- 前記ワイヤバンプの熱伝導率は、前記半田層の熱伝導率より大きいことを特徴とする請求項1〜7のいずれか1項に記載の電力用半導体装置。
- 前記ワイヤバンプは、CuまたはCuの合金である請求項1〜8のいずれか1項に記載の電力用半導体装置。
- 前記ワイヤバンプの材料と前記半田層の材料からなる合金は、Cu6Sn5またはCu3Snである請求項9に記載の電力用半導体装置。
- 前記ワイヤバンプのワイヤの直径が50μm以上である請求項1〜10のいずれか1項に記載の電力用半導体装置。
- 前記ワイヤバンプのワイヤの直径が100μm以上である請求項1〜10のいずれか1項に記載の電力用半導体装置。
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JP2022031611A (ja) * | 2018-11-09 | 2022-02-22 | 住友電気工業株式会社 | 半導体装置 |
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