TWI466253B - 雙相介金屬接點結構及其製作方法 - Google Patents

雙相介金屬接點結構及其製作方法 Download PDF

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Publication number
TWI466253B
TWI466253B TW101137147A TW101137147A TWI466253B TW I466253 B TWI466253 B TW I466253B TW 101137147 A TW101137147 A TW 101137147A TW 101137147 A TW101137147 A TW 101137147A TW I466253 B TWI466253 B TW I466253B
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Taiwan
Prior art keywords
metal
phase
intermetallic
metal layer
dual
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TW101137147A
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English (en)
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TW201415592A (zh
Inventor
Jing Yao Chang
Tao Chih Chang
Tung Han Chuang
Chun Yen Lee
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Ind Tech Res Inst
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Priority to TW101137147A priority Critical patent/TWI466253B/zh
Priority to CN201210459988.9A priority patent/CN103715178B/zh
Priority to US13/736,088 priority patent/US8742600B2/en
Publication of TW201415592A publication Critical patent/TW201415592A/zh
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Publication of TWI466253B publication Critical patent/TWI466253B/zh

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Description

雙相介金屬接點結構及其製作方法
本發明是有關於一種接點結構，且特別是有關於一種雙相介金屬接點結構。
碳化矽元件能提升功率模組(power module)的能量轉換效率，然而，其封裝製程卻面臨迥然不同的技術問題。首先，現行矽基功率模組在運作的過程中，晶片的接面溫度(junction temperature,Tj)約為150℃，尚在常用的無鉛焊錫材料(Sn3.0Ag0.5Cu)可接受的溫度範圍內；但是在碳化矽元件導入應用後，即使是中小瓦數的電源管理模組或是太陽能微逆變器(solar micro inverter)，其Tj也高於175℃，而Sn3.0Ag0.5Cu的起始熔化溫度僅217℃，因此，在此溫度環境下，將會發生劇烈的潛變(creep)效應，不利於接點機械強度的維持，無法滿足長期可靠度的要求，更遑論應用於Tj高達250℃的車用電力模組等產品。因此，對碳化矽功率模組的製造而言，高溫無鉛焊料將是決定產品品質與壽命的關鍵因素之一。
目前，主要的高溫無鉛焊接技術包括鋅基高溫無鉛焊料、奈米金屬粉末燒結，以及固液擴散接合(solid-liquid inter-diffusion,SLID)。
與一般的迴焊(reflow)或熱壓合(thermocompressive bonding)不同，固液擴散接合的原理是讓低熔點的焊錫材 料在短暫液化過程中與固態的高熔點金屬完全反應成穩定的高熔點介金屬化合物(intcrmctallic compound)，這類高熔點介金屬相之熔點高於300℃以上，藉此，令接點在高溫環境下仍保有良好的機械強度，以提升模組的長期可靠度。
然而，應用固液擴散接合，將會面臨製程與材料擴散行為等數種技術困難，於製程困難需面臨接合界面溫度較高(260℃以上)，製程時間較長(10分鐘以上)等問題，但仍可透過焊接材料與厚度選擇、表面處理、組裝參數控制等手法加以克服。而材料擴散行為可分為製程引起與原生性行為，前者起因於基板與晶片之組裝溫度差異，導致晶片與基板端之焊料擴散速率不均；後者則是焊料轉變為介金屬化合物的過程中發生體積收縮效應。由於材料擴散行為屬於不可逆的化學反應變化，所引發之孔洞(void)缺陷對功率模組長期的可靠度有負面之影響。此外，應指出，無論是整面接點或微接點結構接點(micro joint)都無法避免前述孔洞形成的現象。
本發明提出一種雙相介金屬接點結構，介於晶片與載板之間，包括第一介金屬相、第二介金屬相、第一焊接金屬層與第二焊接金屬層。第二介金屬相包覆第一介金屬相，且第一介金屬相與第二介金屬相含有不同的高熔點金屬。第一焊接金屬層與第二焊接金屬層分別配置於第二介 金屬相的相對兩側，其中第一介金屬相是用以填補第二介金屬相形成時所產生的微孔洞缺陷。
本發明提出一種雙相介金屬接點結構的製作方法，用以在晶片與載板之間形成接點，所述製作方法包括以下步驟。首先，在晶片與載板間形成金屬堆疊；所述金屬堆疊包括與晶片相鄰配置的第一焊接金屬層、與載板相鄰配置的第二焊接金屬層以及位於第一焊接金屬層與第二焊接金屬層之間的三明治金屬結構層。三明治金屬結構層是由一對外部金屬層和外部金屬層所夾的內部金屬層所構成。接著，加熱金屬堆疊，使外部金屬層溶化，並使外部金屬層中的金屬與內部金屬層中的金屬形成第一介金屬相，外部金屬層中的金屬與第一焊接金屬層與第二焊接金屬層中的金屬形成第二介金屬相，其中第二介金屬相包覆第一介金屬相。
本發明提出一種電子構裝結構，包括晶片、載板以及前述之雙相介金屬接點結構，其中晶片與載板藉由雙相介金屬接點結構接合。
本發明提出一種電子構裝結構，包括第一晶片、第二晶片以及前述之雙相介金屬接點結構，其中第一晶片與第二晶片藉由雙相介金屬接點結構接合。
本發明提出一種電子構裝結構，包括至少一個整面接點或至少一個凸塊接點，其中所述整面接點或凸塊接點為前述之雙相介金屬接點結構。
為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉實施範例，並配合所附圖式作詳細說明。
以下將以數個實施範例來說明本發明。在此，應先指出，說明書中所謂「高熔點金屬」與「低熔點金屬」，分別是指，在將溫度升高至一特定值時，前者維持固態，後者熔化，且兩者之間可以進行固液交互擴散而形成介金屬化合物的兩種金屬，其具體實例如下詳述。
圖1A與圖1B是根據本發明的第一實施範例所繪示的雙相介金屬接點結構的剖面示意圖。
參照圖1A與圖1B，雙相介金屬接點結構100配置於晶片110與載板120之間，其包括第一介金屬相102、第二介金屬相104、第一焊接金屬層106與第二焊接金屬層108。
晶片110可以是任意一種半導體晶片，例如功率模組中的金氧半導體電晶體(MOSFET)或絕緣閘雙極電晶體(insulated gate bipolar transistor,IGBT)晶片；或是中央處理器(central processing unit,CPU)或圖形處理器(graphic processing unit,GPU)。載板120可以是適於與晶片110接合的任意基板，例如銅基板、矽中介層(interposer)、導線架(lead frame)或另一晶片。
第一介金屬相102與第二介金屬相104均是由高熔點金屬與低熔點金屬經固液交互擴散而形成的介金屬化合物，且第一介金屬相102與第二介金屬相104含有不同的高熔點金屬。譬如，第一介金屬相102可以是Ag3 Sn，而 第二介金屬相104可以是Cu6 Sn5 ，亦即，第一介金屬相102含有的高熔點金屬為銀，而第二介金屬相104含有的高熔點金屬為銅。當然，本實施範例並不以此為限，在其他實施型態中，第一介金屬相102的成份可包括Ni3 Sn4 、Cu6 Sn5 、Cu11 In9 、Ag3 Sn、Ni28 In72 、AuSn4 、AuSn2 、AuSn或Au5 Sn；而第二介金屬相104的成份可以包括Ni3 Sn2 、Cu3 Sn、Ag4 Sn、Ag3 Sn或Ag2 In，只要第一介金屬相102與第二介金屬相104含有不同的高熔點金屬即可。此外，第二介金屬相104可由成份相同但化學計量比不同的多種介金屬化合物組成。例如，第二介金屬相104可包括Cu6 Sn5 與Cu3 Sn層介金屬化合物。
在一實施範例中，第一介金屬相102與第二介金屬相104可含有相同的低熔點金屬，例如錫。
如圖1A所示，第一介金屬相102被包覆於第二介金屬相104中，且第一介金屬相102為連續結構。在本實施範例的其他實施型態中，第一介金屬相也可以是不連續的結構，也就是說，第一介金屬相可以是多個被第二介金屬相104隔離的聚集體(aggregate)，如圖1B所示的第一介金屬相103。應注意，即使是如圖1B所示的不連續結構，第一介金屬相103仍被第二介金屬相104完整地包覆。此外，第一介金屬相可能具有不規則的形狀，並不限於圖1B繪示的球狀聚集體，也不一定具有圖1A繪示的平滑表面。
第一焊接金屬層106與第二焊接金屬層108分別配置於第二介金屬相104的相對兩側。第一焊接金屬層106與 第二焊接金屬層108可以是相同的高熔點金屬，例如鎳、銅或銀。在一實施範例中，第一焊接金屬層106、第二焊接金屬層108與第二介金屬相104所含的高熔點金屬是同一金屬。
在本實施範例中，第一介金屬相102可以填補或嵌入於第二介金屬相104形成時所產生的微孔洞缺陷，使雙相介金屬接點結構100整體成為緻密結構，而不具因製程引起或原生性行為導致的體積收縮而產生的孔洞，從而提高了雙相介金屬接點結構100的機械性質。在第一介金屬相102為Ag3 Sn而第二介金屬相104為Ni3 Sn4 或Cu6 Sn5 的實施範例中，第一介金屬相102還具有提高雙相介金屬接點結構100的延展性、形成應力緩衝層(吸收因熱膨脹係數不匹配而引起的疲勞應力)以及增益熱傳導性能等特性，藉此，接點的壽命得以延長。
圖2A至圖2C是根據本發明的第二實施範例所繪示的雙相介金屬接點結構的製作方法的剖面流程圖。
本發明的第二實施範例提供一種雙相介金屬接點結構的製作方法，用以在晶片210與載板220之間形成接點。 晶片210與載板220的實例可以和第一實施範例中所述者相同。
根據第二實施範例，雙相介金屬接點結構的製作方法包括以下步驟。
首先，如圖2A所示，在晶片210與載板220間形成金屬堆疊230。金屬堆疊230包括與晶片210相鄰配置的第 一焊接金屬層202，與載板220相鄰配置的第二焊接金屬層204以及位於第一焊接金屬層202與第二焊接金屬層204之間的三明治金屬結構層200。第一焊接金屬層202與第二焊接金屬層204的材料可為高熔點金屬，且可以和第一實施範例中所述的第一焊接金屬層106與第二焊接金屬層108的材料相同。在本實施範例中，只要第一焊接金屬層202與第二焊接金屬層204不會從晶片210或載板220上劈裂(peeling)，其厚度通常愈厚愈好。考量製程時間與良率，通常會將厚度設定為3 μm至10 μm，但本發明不限於此。
三明治金屬結構層200是由一對外部金屬層206和由外部金屬層206所夾的內部金屬層208所構成。外部金屬層206的材料可以是低熔點金屬，例如由錫與銦所組成的族群中選擇的一種金屬材料。外部金屬層206在接合時作為焊料使用，其厚度通常愈薄愈好，但考量焊接品質、產能與良率，通常會將厚度設定為1 μm至5 μm，但本發明不限於此。至於內部金屬層208，其材料可為高熔點金屬，例如由金、銀、鎳與銅所組成的族群中選擇的一種金屬材料；其厚度可小於兩個外部金屬層206的厚度之和，在一實施範例中可為1 μm至3 μm，但本發明不限於此。在之後的加熱製程期間，外部金屬層206的低熔點金屬會分別和第一與第二焊接金屬層202、204的高熔點金屬以及內部金屬層208的高熔點金屬形成介金屬化合物，因此，厚度須視材料形成介金屬化合物時的反應速率、介金屬比例及 收縮比而再最佳化。
金屬堆疊230的形成方法可包括電鍍薄膜、印刷錫膏或其組合。此外，三明治金屬結構層200可與第一焊接金屬層202或第二焊接金屬層204一同形成於晶片210或載板220上；或者，可在晶片210上依序形成第一焊接金屬層202、外部金屬層206與內部金屬層208；在載板220上形成第一焊接金屬層204與外部金屬層206；再疊合前述兩者，以形成三明治金屬結構層200。當然，本發明不限於前述兩種情形，只要在對金屬堆疊230加熱以前形成如圖2A所示的結構即可。
接著，如圖2B所示，加熱金屬堆疊230，使外部金屬層206溶化。加熱可在真空環境、還原氣氛或大氣環境下進行燒結接合。加熱之溫度視外部金屬層206所含金屬之熔點而定，通常比外部金屬層206所含金屬之熔點高約20℃至40℃，但本發明不限於此。溫度愈高，愈有助於加快介金屬化合物的形成，但必須避免過高的溫度造成晶片或載板損壞。此外，在加熱期間，還可對金屬堆疊230施加壓力F。壓力F的施加有助於消除各金屬層與介金屬層之界面的孔洞，也有助於填補介金屬化合物形成時形成的孔洞，關於此點，下文將有更詳細的解釋。
在圖2B所示的步驟中，外部金屬層206分別和第一焊接金屬層202與第二焊接金屬層204反應，形成第二介金屬相240，此處，是以第一焊接金屬層202與第二焊接金屬層204含同一種高熔點金屬為範例來說明。同時，外部金 屬層206與內部金屬層208反應，形成第一介金屬相250。在一實施例中，內部金屬層208的厚度小於一對外部金屬層206的厚度之和，因此在圖2B所示的時間點，內部金屬層208已反應殆盡，而由內部金屬層208反應得來的第一介金屬相250散亂地分布在處於熔融態的外部金屬層206內。應理解，雖然在圖2B中將各金屬層和介金屬層之間的界面繪示為平滑界面，但微觀上這些界面可能因原子交互擴散的作用而產生凹凸不平的界面特徵。
如圖2C所示，持溫一段時間以後，介金屬化的反應完成，亦即，外部金屬層206的金屬完全與第一焊接金屬層202與第二焊接金屬層204反應，形成包覆第一介金屬相250的第二介金屬相240。
第二介金屬相240可包括一種或一種以上的介金屬化合物。舉例來說，當第一銲接金屬層202與第二焊接金屬層204所含的金屬為銅，而外部金屬層206所含的金屬為錫時，銅與錫反應，會同時生成Cu6 Sn5 及Cu3 Sn兩種介金屬化合物，Cu6 Sn5 較厚且優先形成，Cu3 Sn較薄且隨後形成，兩者在時間順序上幾乎同時。隨持溫時間越長，Cu6 Sn5 會逐漸消耗變薄而轉變成Cu3 Sn，但要完全轉化成Cu3 Sn需要相當長的時間。Ni與Sn、Cu與In、Ni與In都有類似現象，差別在於，某些優先形成的介金屬化合物不會完全轉換成隨後形成的介金屬化合物。
第二介金屬相240形成期間，孔洞(未繪示)可能由於製程引起或原生性行為導致的體積收縮的緣故而產生。 壓力F的作用在於，晶片端與載板端的第二介金屬相240形成時(如圖2B中分別位於外部金屬層206兩側的第二介金屬相240)，外部金屬層206會快速消耗，造成體積收縮，形成斷面或大孔洞。透過壓力F往內擠壓將有助縮小此缺陷或延緩此缺陷的形成。在持溫持壓的狀態下繼續固液交互擴散，當外部金屬層206耗盡，此時的第二介金屬相240互相接觸，第一介金屬相250得以崁入不規則結構或孔洞而填補這些缺陷。最終，第一介金屬相250可能形成分離且各自被第二介金屬相240包覆的多個聚集體結構，如圖2C或圖1B所示，也可能形成如圖1A所示的連續結構。以上，是一種以第一介金屬相250填補固液擴散接合期間形成之孔洞的可能機制，但本發明並不排除其他機制的可能性。
為證實本發明的實質效果，進行如下實驗。
比較例1~3
在一對矽基板之間形成5 μm鎳層/3 μm錫層/5 μm鎳層的金屬堆疊，並在加熱接合後以推力機對接合結構施以剪力，直到破壞接合結構為止。比較例中，僅形成一種介金屬化合物(即Ni3 Sn4 )，且此介金屬化合物中具有孔洞。根據實驗結果，比較例1~3的接合結構可承受的平均應力約為13 MPa。
實驗例1~3
在晶片與載板之間形成5 μm鎳層/1.5 μm錫層/2 μm銀層/1.5 μm錫層/5 μm鎳層的金屬堆疊，並在加熱接合後以 推力機對接合結構施以剪力，直到接合結構破壞為止。實驗例中，除了Ni3 Sn4 以外也形成了Ag3 Sn。Ag3 Sn不但可以填補Ni3 Sn4 形成時造成的孔洞，且其熱傳導係數為44.5 W/mK，也大於Ni3 Sn4 的熱傳導係數(19.6 W/mK)，因此有利於降低熱的累積。此實驗例的接合結構可承受的平均應力上升至大於20 MPa。
比較例4~6
在一對矽基板之間形成5 μm鎳層/3 μm銦層/5 μm鎳層的金屬堆疊，並在加熱接合後以推力機對接合結構施以剪力，直到破壞接合結構為止。比較例4~6中，僅形成一種介金屬化合物(即鎳銦化合物)，且此介金屬化合物中具有孔洞。根據實驗結果，比較例的接合結構可承受的平均應力約為6 MPa。
實驗例4~6
在一對矽基底之間形成5 μm鎳層/3 μm銦層/1 μm銀層/3 μm銦層/5 μm鎳層的金屬堆疊，此金屬堆疊經加熱接合以後，在鎳銦化合物中形成了Ag2 In，同樣具有提昇機械強度以及促進熱傳導的效果，其可承受的平均應力上升至大於10 MPa。
本發明的第三實施範例提供了一種電子構裝結構，其是利用第一實施範例所述的雙相介金屬接點結構，將晶片接合至載板。晶片例如可與前文針對晶片110所述者相同；載板例如可與前文針對載板120所述者相同。
本發明的第四實施範例提供了一種電子構裝結構，在此電子構裝結構中至少包括一個整面接點或至少一個凸塊接點(bump contact)，且此整面接點或凸塊接點為第一實施範例所述的雙相介金屬接點結構。
綜上所述，本發明提供一種雙相介金屬接點結構、其製作方法，以及使用此雙相介金屬接點結構的電子構裝結 構。在雙相介金屬接點結構中，第一介金屬相可以填補或嵌入於第二介金屬相形成時所產生的微孔洞缺陷，使雙相介金屬接點結構不再具有因體積收縮而產生的孔洞，從而提高了雙相介金屬接點結構的機械性質。若材料選擇適當，則第一介金屬相還具有提高雙相介金屬接點結構的延展性、形成應力緩衝層(吸收因熱膨脹係數不匹配而引起的疲勞應力)以及增益熱傳導性能等特性，接點的壽命因此得以延長。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧雙相介金屬接點結構
102、103‧‧‧第一介金屬相
104‧‧‧第二介金屬相
106、202‧‧‧第一焊接金屬層
108、204‧‧‧第二焊接金屬層
110、210‧‧‧晶片
120、220‧‧‧載板
200‧‧‧三明治金屬結構層
206‧‧‧外部金屬層
208‧‧‧內部金屬層
230‧‧‧金屬堆疊
240‧‧‧第二介金屬相
250‧‧‧第一介金屬相
F‧‧‧壓力
圖1A與圖1B是根據本發明的第一實施範例所繪示的雙相介金屬接點結構的剖面示意圖。
圖2A至圖2C是根據本發明的第二實施範例所繪示的雙相介金屬接點結構的製作方法的剖面流程圖。
100‧‧‧雙相介金屬接點結構
102‧‧‧第一介金屬相
104‧‧‧第二介金屬相
106‧‧‧第一焊接金屬層
108‧‧‧第二焊接金屬層
110‧‧‧晶片
120‧‧‧載板

Claims (17)

  1. 一種雙相介金屬接點結構，介於一晶片與一載板之間，包括：一第一介金屬相；一第二介金屬相，包覆該第一介金屬相，且該第一介金屬相與該第二介金屬相分別含有不同的高熔點金屬；以及一第一焊接金屬層與一第二焊接金屬層，分別配置於該第二介金屬相的相對兩側；其中該第一介金屬相是用以填補該第二介金屬相形成時因體積收縮而產生的微孔洞缺陷。
  2. 如申請專利範圍第1項所述之雙相介金屬接點結構，其中該第一介金屬相為連續結構。
  3. 如申請專利範圍第1項所述之雙相介金屬接點結構，其中該第一介金屬相為不連續結構。
  4. 如申請專利範圍第1項所述之雙相介金屬接點結構，其中該第一介金屬相的成份包括Ni3 Sn4 、Cu6 Sn5 、Cu11 In9 、Ag3 Sn、Ni28 In72 、AuSn4 、AuSn2 、AuSn或Au5 Sn。
  5. 如申請專利範圍第1項所述之雙相介金屬接點結構，其中該第二介金屬相的成份包括Ni3 Sn2 、Cu3 Sn、Ag4 Sn、Ag3 Sn或Ag2 In。
  6. 如申請專利範圍第1項所述之雙相介金屬接點結構，其中該高熔點金屬之熔點高於300℃。
  7. 一種雙相介金屬接點結構的製作方法，用以在一晶 片與一載板之間形成接點，所述製作方法包括：在該晶片與該載板間形成一金屬堆疊，該金屬堆疊包括：與該晶片相鄰配置的一第一焊接金屬層、與該載板相鄰配置的一第二焊接金屬層、以及位於該第一焊接金屬層與該第二焊接金屬層之間的一三明治金屬結構層，該三明治金屬結構層是由一對外部金屬層和該對外部金屬層所夾的一內部金屬層所構成；以及加熱該金屬堆疊，使該對外部金屬層溶化，使該對外部金屬層中的金屬與該內部金屬層中的金屬形成一第一介金屬相，並使該對外部金屬層中的金屬與該第一焊接金屬層與該第二焊接金屬層中的金屬形成一第二介金屬相，其中該第二介金屬相包覆該第一介金屬相。
  8. 如申請專利範圍第7項所述之雙相介金屬接點結構的製作方法，其中該內部金屬層的厚度小於該對外部金屬層的厚度之和。
  9. 如申請專利範圍第7項所述之雙相介金屬接點結構的製作方法，其中在加熱該金屬堆疊的步驟期間，更包括對該金屬堆疊施加壓力。
  10. 如申請專利範圍第7項所述之雙相介金屬接點結構的製作方法，其中該第一焊接金屬層、該第二焊接金屬層以及該內部金屬層由高熔點金屬組成，該對外部金屬層由低熔點金屬組成。
  11. 如申請專利範圍第10項所述之雙相介金屬接點結構的製作方法，其中該第一焊接金屬層與該第二焊接金屬 層由相同的高熔點金屬組成，而該內部金屬層與該第一焊接金屬層由不同的的高熔點金屬組成。
  12. 如申請專利範圍第10項所述之雙相介金屬接點結構的製作方法，其中該對外部金屬層之材料是由錫與銦所組成的族群中選擇的一種金屬材料。
  13. 如申請專利範圍第11項所述之雙相介金屬接點結構的製作方法，其中該第一焊接金屬層與該第二焊接金屬層之材料是由銀、鎳與銅所組成的族群中選擇的一種金屬材料。
  14. 如申請專利範圍第11項所述之雙相介金屬接點結構的製作方法，其中該內部金屬層之材料是由金、銀、鎳與銅所組成的族群中選擇的一種金屬材料。
  15. 一種電子構裝結構，包括一晶片、一載板、以及如申請專利範圍第1項至第6項中任一項所述之雙相介金屬接點結構，其中該晶片與該載板藉由該雙相介金屬接點結構接合。
  16. 一種電子構裝結構，包括一第一晶片、一第二晶片、以及如申請專利範圍第1項至第6項中任一項所述之雙相介金屬接點結構，其中該第一晶片與該第二晶片藉由該雙相介金屬接點結構接合。
  17. 一種電子構裝結構，包括至少一個整面接點或至少一個凸塊接點，該整面接點或該凸塊接點為如申請專利範圍第1項至第6項中任一項所述之雙相介金屬接點結構。
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