JP2019216214A - 半導体装置、リードフレーム及び半導体装置の製造方法 - Google Patents
半導体装置、リードフレーム及び半導体装置の製造方法 Download PDFInfo
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Abstract
Description
図1及び図2に示すように、本発明の第1実施形態に係る半導体装置100は、回路基板10、複数の第1半導体素子15a〜第6半導体素子15f及び接続端子群(401,402)を備える。半導体装置100は封止樹脂6を備えてもよい。回路基板10は、その上面に複数の第1半導体素子15a〜第6半導体素子15fを搭載する。第1半導体素子15a〜第6半導体素子15fは、内部の活性領域がpn接合を構成することによって主電流の流れが制御される素子である。接続端子群(401,402)は、回路基板10、第1半導体素子15a〜第6半導体素子15f等に接続される複数の接続端子(リード)から構成される。封止樹脂6は、回路基板10の上面、第1半導体素子15a〜第6半導体素子15f、接続端子群(401,402)の各一部等を封止する。半導体装置100は、例えば電力用の第1半導体素子15a〜第6半導体素子15fを用いて、入力された電力を所定の電力に変換する電力用半導体装置(パワーデバイス)等として用いることができる。
次に、図5〜図10を参照して、第1実施形態に係る半導体装置の製造方法の一例を説明する。
図11及び図12に示すように、本発明の第2実施形態に係る半導体装置200は、接触リード群(51a,51d)の代わりに、1つの押圧部51bを備える点で第1実施形態と異なる。第2実施形態において説明しない他の構成、作用及び効果は第1実施形態と同様である。なお、以下の平面図において、電力用端子群401A及び第1半導体素子15a〜第6半導体素子15fの間を適宜接続する複数の電力用ワイヤ25(図12等参照)の表示を省略する。
図13及び図14に示すように、本発明の第3実施形態に係る半導体装置300は、接合リード群(3Ba,3b,3c,3Bd)から分離された第1押圧部51Ba及び第2押圧部51Bd備える点で第1実施形態と異なる。第3実施形態において説明しない他の構成、作用及び効果は第1実施形態と同様である。
図15及び図16に示すように、本発明の第4実施形態に係る半導体装置400は、第1接触パターン層17a及び第2接触パターン層17dを備える点で第1実施形態と異なる。ここで、「第1接触パターン層17a」は、第1押圧部51aが接触する接触領域であり、「第2接触パターン層17d」は、第2押圧部51dが接触する接触領域である。第4実施形態において説明しない他の構成、作用及び効果は第1実施形態と同様である。
図17及び図18に示すように、本発明の第5実施形態に係る半導体装置500は、第1押圧部51a及び第2押圧部51dが接触する接触領域が絶縁板11の上面に定義される点で第4実施形態と異なる。第5実施形態において説明しない他の構成、作用及び効果は第4実施形態と同様である。
上記のように、本発明の実施形態を記載したが、この開示の一部をなす論述及び図面は本発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
51a,51b,51d,51Ba,51Bd 押圧部
5a,5d 接触リード
6 封止樹脂
7 搬送治具
10 回路基板
11 絶縁板
12a〜12d,12Ca,12Cd 回路パターン層
13 金属板
15a〜15f 半導体素子
21a〜21f,22a〜22d 溶融接合部
25,25a〜25f 電力用ワイヤ
31a〜31d 接合部
32 降下部
34 第1延伸部
33 連結部
35 幅広部
36 第2延伸部
37 アウターリード
40 リードフレーム
42 信号用リード
43 ダイパッド
44 第1タイバー
45 第2タイバー
46 フレーム部
100、200、300、400、500 半導体装置
401,401A,401B 接続端子群(電力用端子群)
402 信号用端子群
310 対向面
510 接触部
Claims (7)
- 回路パターン層を有する回路基板と、
前記回路パターン層上に搭載された半導体素子と、
前記回路パターン層の上面の一部に配置された溶融接合材と、
前記溶融接合材を介して前記回路パターン層に電気的に接続する接合部及び前記回路基板の上面に機械的に接触する押圧部を含む複数のリードから構成された接続端子群と、
を備えることを特徴とする半導体装置。 - 前記接続端子群には、
前記溶融接合材を介して前記回路パターン層に電気的に接続する接合リードと、
前記回路基板の上面に機械的に接触する接触リードと
が含まれ、前記接合部は前記接合リードの先端に設けられ、前記押圧部は、前記接触リードの先端に設けられていることを特徴とする請求項1に記載の半導体装置。 - 前記接続端子群には、前記溶融接合材を介して前記回路パターン層に電気的に接続する接合リードが含まれ、
前記押圧部と前記接合部が、前記接合リードの先端側の一部からそれぞれ分岐していることを特徴とする請求項1に記載の半導体装置。 - 前記回路基板は、絶縁板を更に備え、
前記回路パターン層は、前記絶縁板の上面に配置されていることを特徴とする請求項1〜3のいずれか1項に記載の半導体装置。 - 前記絶縁板の上面に前記押圧部が直接接触することを特徴とする請求項4に記載の半導体装置。
- 回路パターン層を有する回路基板に接合されるリードフレームであって、
溶融接合材を介して前記回路パターン層に電気的に接続される接合部、及び前記回路基板の上面に機械的に接触する押圧部を含む複数のリードから構成された接続端子群と、
前記接続端子群を支持するフレーム部と、
を備え、前記接続端子群は、前記押圧部が前記回路基板の上面に接触した状態において、前記接合部と前記回路パターン層との間に隙間が存在するように前記複数のリードの形状が調整されていることを特徴とするリードフレーム。 - 回路パターン層を有する回路基板を用意する工程と、
半導体素子を、前記回路基板上に搭載する工程と、
前記回路パターン層の上面に、溶融接合材を塗布する工程と、
前記溶融接合材を介して前記回路パターン層に電気的に接続する接合部、及び前記回路基板の上面に機械的に接触する押圧部を含む複数のリードから構成された接続端子群を有するリードフレームを、前記回路基板の上方に配置する工程と、
前記押圧部によって、前記回路基板を押圧し、前記接合部と前記回路パターン層との間に隙間が存在するように前記リードフレームを配置する工程と、
前記溶融接合材を溶融する工程と、
を含むことを特徴とする半導体装置の製造方法。
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