JP6250864B2 - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
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- JP6250864B2 JP6250864B2 JP2017504977A JP2017504977A JP6250864B2 JP 6250864 B2 JP6250864 B2 JP 6250864B2 JP 2017504977 A JP2017504977 A JP 2017504977A JP 2017504977 A JP2017504977 A JP 2017504977A JP 6250864 B2 JP6250864 B2 JP 6250864B2
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- power semiconductor
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- electrode layer
- semiconductor device
- semiconductor element
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Description
本発明の実施の形態1であるパワー半導体装置について、図を参照しながら以下に説明する。図1は、本発明の実施の形態1によるパワー半導体装置の構成を示す断面模式図ある。
実施の形態1では、パワー半導体素子4の表面電極41aにおいて、無電解めっきで形成されたCu層81上に、Cu層81より柔らかい無電解めっきで形成されたCu層82が積層する構成としたが、実施の形態2では、Cu層81とCu層82との間に密着力を向上させる金属層を設けた場合について説明する。
実施の形態1では、パワー半導体素子4の表面電極41aにおいて、無電解めっきで形成されたCu層81上に、Cu層81より柔らかい無電解めっきで形成されたCu層82が積層する構成としたが、実施の形態3では、柔らかいCu層の下が硬いNi層である場合について説明する。
実施の形態1では、複数のワイヤ6を一つの表面電極41aにボンディングする構成としたが、実施の形態4では、複数のワイヤ6にそれぞれに対応する表面電極を設けた場合について説明する。
実施の形態4では、Al層7の形状に合わせてCu層8(Cu層81とCu層82)を形成したが、実施の形態5では、Cu層8(Cu層81とCu層82)が覆いかぶさるように形成した場合について説明する。
Claims (21)
- パワー半導体素子と、
前記パワー半導体素子上に設けられた第一電極層と、
前記第一電極層上に設けられた前記第一電極層よりも硬度の低いCuを主成分とする第二電極層と、
前記第二電極層に接続されたCuを主成分とするボンディングワイヤと
を備え、
前記第一電極層は、ビッカース硬度が200〜350Hvであり、前記第二電極層は、ビッカース硬度が70〜150Hvであることを特徴とするパワー半導体装置。 - 前記第一電極層は、Cuを主成分とする層であることを特徴とする請求項1に記載のパワー半導体装置。
- 前記第一電極層は、下地層と前記下地層上に無電解めっきで形成されたCuを主成分とする層とであることを特徴とする請求項1に記載のパワー半導体装置。
- 前記第二電極層は、前記第一電極層を下地として無電解めっきで形成されたCuを主成分とする層であることを特徴とする請求項3に記載のパワー半導体装置。
- 前記第一電極層は、下地層のみであり、前記第二電極層は、前記第一電極層を下地として無電解めっきで形成されたCuを主成分とする層であることを特徴とする請求項1に記載のパワー半導体装置。
- 前記第一電極層は、平均結晶粒径が1μm以下であることを特徴とする請求項1から請求項5のいずれか1項に記載のパワー半導体装置。
- 前記第二電極層は、平均結晶粒径が5μm以上であることを特徴とする請求項1から請求項6のいずれか1項に記載のパワー半導体装置。
- 前記第一電極層は、膜厚が5〜20μmであることを特徴とする請求項1から請求項7
のいずれか1項に記載のパワー半導体装置。 - 前記第二電極層は、膜厚が5〜20μmであることを特徴とする請求項1から請求項8のいずれか1項に記載のパワー半導体装置。
- 前記第一電極層の下地層は、膜厚が0.1〜5μmであることを特徴とする請求項3または請求項4に記載のパワー半導体装置。
- 前記下地層は、Al、Cu、またはNiにより形成されたことを特徴とする請求項10に記載のパワー半導体装置。
- 前記第一電極層と前記第二電極層との間に、Au、Pdの少なくとも一方を含む金属膜が、0.1μm以下の膜厚で設けられたことを特徴とする請求項1から請求項11のいずれか1項に記載のパワー半導体装置。
- 前記ボンディングワイヤは、複数設けられるとともに、少なくとも前記第二電極層が前記ボンディングワイヤのそれぞれに対応して複数設けられたことを特徴とする請求項1から請求項12のいずれか1項に記載のパワー半導体装置。
- 少なくとも前記第二電極層は、前記ボンディングワイヤとの接続部の面積の1〜1.5倍の面積でそれぞれ設けられたことを特徴とする請求項13に記載のパワー半導体装置。
- 少なくとも前記第二電極層は、形状が楕円または矩形でそれぞれ設けられたことを特徴とする請求項13または請求項14に記載のパワー半導体装置。
- 前記パワー半導体素子は、前記第一電極層および前記第二電極層の外周に絶縁層を設けたことを特徴とする請求項13から請求項15のいずれか1項に記載のパワー半導体装置。
- 前記絶縁層は、ポリイミドまたは窒化膜で設けられたことを特徴とする請求項16に記載のパワー半導体装置。
- 前記第一電極層および前記第二電極層が、外周の前記絶縁層に覆いかぶさっていることを特徴とする請求項16または請求項17に記載のパワー半導体装置。
- 前記絶縁層に覆いかぶさっている領域は、外周の幅が1〜10μmであることを特徴とする請求項18に記載のパワー半導体装置。
- 前記パワー半導体素子は、ワイドバンドギャップ半導体材料により形成されたことを特徴とする請求項1から請求項19のいずれか1項に記載のパワー半導体装置。
- 前記ワイドバンドギャップ半導体材料は、炭化ケイ素、窒化ガリウム系材料、およびダイヤモンドのうちのいずれかであることを特徴とする請求項20に記載のパワー半導体装置。
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JP6698499B2 (ja) * | 2016-11-15 | 2020-05-27 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2019110247A (ja) * | 2017-12-19 | 2019-07-04 | トヨタ自動車株式会社 | 半導体装置 |
US10872861B2 (en) * | 2018-02-07 | 2020-12-22 | Advanced Semiconductor Engineering, Inc. Kaohsiung, Taiwan | Semiconductor packages |
WO2019197304A1 (en) | 2018-04-11 | 2019-10-17 | Abb Schweiz Ag | Material reduced metallic plate on power semiconductor chip |
DE112019003550T5 (de) * | 2018-07-12 | 2021-03-25 | Rohm Co., Ltd. | Halbleiterelement und halbleiterbauteil |
WO2020144790A1 (ja) * | 2019-01-10 | 2020-07-16 | 三菱電機株式会社 | 電力用半導体装置 |
JPWO2021176996A1 (ja) * | 2020-03-04 | 2021-09-10 | ||
JP7267963B2 (ja) * | 2020-03-11 | 2023-05-02 | 株式会社 日立パワーデバイス | 半導体装置 |
CN115315791A (zh) * | 2020-04-06 | 2022-11-08 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP7496724B2 (ja) | 2020-06-25 | 2024-06-07 | 株式会社 日立パワーデバイス | 半導体装置 |
WO2022029828A1 (ja) | 2020-08-03 | 2022-02-10 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法および電力変換装置 |
CN112201628A (zh) * | 2020-08-24 | 2021-01-08 | 株洲中车时代半导体有限公司 | 一种功率模块封装结构及其制备方法 |
JP2023058346A (ja) | 2021-10-13 | 2023-04-25 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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