JP2014082367A - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
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- JP2014082367A JP2014082367A JP2012229867A JP2012229867A JP2014082367A JP 2014082367 A JP2014082367 A JP 2014082367A JP 2012229867 A JP2012229867 A JP 2012229867A JP 2012229867 A JP2012229867 A JP 2012229867A JP 2014082367 A JP2014082367 A JP 2014082367A
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Abstract
【解決手段】半導体チップ1としてSiC単結晶チップを用い、SiC単結晶チップ上にボンディングワイヤ3と接続するための電極2を有し、電極2はその中にTaの硬度と同等又はそれ以上の硬度を有する保護層7を少なくとも1層有し、電極の最上層6はCu又はCu合金層であり、電極2に接続するボンディングワイヤ3はCu又はCu合金ワイヤであることを特徴とするパワー半導体装置。保護層7は、W、Co、Mo、Ti、Taのいずれか又はそれらの合金からなり、保護層7の膜厚が0.5μm以上であるとよい。
【選択図】図1
Description
(1)半導体チップとしてSiC単結晶チップを用い、該SiC単結晶チップ上にボンディングワイヤと接続するための電極を有し、該電極はその中にTaの硬度と同等又はそれ以上の硬度を有する保護層を少なくとも1層有し、電極の最上層はCu又はCu合金層であり、該電極に接続するボンディングワイヤはCu又はCu合金ワイヤであることを特徴とするパワー半導体装置。
(2)前記保護層は、W、Co、Mo、Ti、Taのいずれか又はそれらの合金からなり、保護層の膜厚が0.5μm以上であることを特徴とする上記(1)に記載のパワー半導体装置。
(3)前記ボンディングワイヤは直径が50μm以上であり、前記電極に超音波接合されてなることを特徴とする上記(1)又は(2)に記載のパワー半導体装置。
(4)前記保護層とSiC単結晶チップとの間に、コンタクト層を有することを特徴とする上記(1)乃至(3)のいずれかに記載のパワー半導体装置。
2 電極
3 ボンディングワイヤ
4 基板
5 超音波接合部
6 最上層
7 保護層
8 コンタクト層
Claims (4)
- 半導体チップとしてSiC単結晶チップを用い、該SiC単結晶チップ上にボンディングワイヤと接続するための電極を有し、該電極はその中にTaの硬度と同等又はそれ以上の硬度を有する保護層を少なくとも1層有し、電極の最上層はCu又はCu合金層であり、該電極に接続するボンディングワイヤはCu又はCu合金ワイヤであることを特徴とするパワー半導体装置。
- 前記保護層は、W、Co、Mo、Ti、Taのいずれか又はそれらの合金からなり、保護層の膜厚が0.5μm以上であることを特徴とする請求項1に記載のパワー半導体装置。
- 前記ボンディングワイヤは直径が50μm以上であり、前記電極に超音波接合されてなることを特徴とする請求項1又は2に記載のパワー半導体装置。
- 前記保護層とSiC単結晶チップとの間に、コンタクト層を有することを特徴とする請求項1乃至3のいずれかに記載のパワー半導体装置。
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016093067A1 (ja) * | 2014-12-11 | 2016-06-16 | 株式会社神戸製鋼所 | 電極構造 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6292332A (ja) * | 1985-10-17 | 1987-04-27 | Furukawa Electric Co Ltd:The | 半導体装置 |
JPS62120037A (ja) * | 1985-11-20 | 1987-06-01 | Furukawa Electric Co Ltd:The | 半導体装置 |
JPS63148649A (ja) * | 1986-12-12 | 1988-06-21 | Mitsubishi Electric Corp | 半導体装置の電極構造 |
JPH01187832A (ja) * | 1988-01-22 | 1989-07-27 | Hitachi Ltd | 半導体デバイスおよび半導体チップ |
JPH01220850A (ja) * | 1988-02-29 | 1989-09-04 | Sharp Corp | 半導体装置の電極構造 |
JP2009194216A (ja) * | 2008-02-15 | 2009-08-27 | Hitachi Ltd | 半導体装置の製造方法 |
-
2012
- 2012-10-17 JP JP2012229867A patent/JP2014082367A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6292332A (ja) * | 1985-10-17 | 1987-04-27 | Furukawa Electric Co Ltd:The | 半導体装置 |
JPS62120037A (ja) * | 1985-11-20 | 1987-06-01 | Furukawa Electric Co Ltd:The | 半導体装置 |
JPS63148649A (ja) * | 1986-12-12 | 1988-06-21 | Mitsubishi Electric Corp | 半導体装置の電極構造 |
JPH01187832A (ja) * | 1988-01-22 | 1989-07-27 | Hitachi Ltd | 半導体デバイスおよび半導体チップ |
JPH01220850A (ja) * | 1988-02-29 | 1989-09-04 | Sharp Corp | 半導体装置の電極構造 |
JP2009194216A (ja) * | 2008-02-15 | 2009-08-27 | Hitachi Ltd | 半導体装置の製造方法 |
Non-Patent Citations (1)
Title |
---|
JPN6016023853; 余宙他: 'パワーデバイス用銅ワイヤボンディング' 第26回エレクトロニクス実装学術講演大会講演論文集 7DP-09, 20120309, pp.367-369 * |
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