JPWO2016143557A1 - パワー半導体装置 - Google Patents

パワー半導体装置 Download PDF

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JPWO2016143557A1
JPWO2016143557A1 JP2017504977A JP2017504977A JPWO2016143557A1 JP WO2016143557 A1 JPWO2016143557 A1 JP WO2016143557A1 JP 2017504977 A JP2017504977 A JP 2017504977A JP 2017504977 A JP2017504977 A JP 2017504977A JP WO2016143557 A1 JPWO2016143557 A1 JP WO2016143557A1
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power semiconductor
layer
semiconductor device
electrode layer
semiconductor element
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JP2017504977A
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JP6250864B2 (ja
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翔平 小川
翔平 小川
菊池　正雄
正雄 菊池
藤野　純司
純司 藤野
祥久 内田
祥久 内田
裕一郎 鈴木
裕一郎 鈴木
辰則 柳本
辰則 柳本
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

パワー半導体装置１００において、パワー半導体素子４の表面電極４１ａは、ビッカース硬度が２００〜３５０ＨｖのＣｕを主成分とする無電解めっきで形成されたＣｕ層８１上に、Ｃｕ層８１より柔らかいビッカース硬度が７０〜１５０ＨｖのＣｕを主成分とする無電解めっきで形成されたＣｕ層８２が積層して設けられ、Ｃｕ層８２とＣｕ製のワイヤ６とをワイヤボンディングする。

Description

本発明は、パワー半導体素子の表面電極と外部電極との電気配線のためにワイヤボンディングが接続されるパワー半導体装置に関する。
従来、パワー半導体装置の電気配線のためにＡｌワイヤボンディングが行われているが、高温動作化や高信頼化の要求から、ワイヤの材料を見直す必要があった。そこで、電気容量が大きく、機械強度が高いため信頼性向上が期待されるＣｕワイヤボンディングの開発が行われている。しかし、従来のＡｌワイヤを用いた時と同様のウェッジボンディングで、Ｃｕワイヤを用いたボンディングを行った場合、ＣｕはＡｌと比較するとヤング率が高いため、ボンディング時に半導体素子にダメージを与えることが懸念される。半導体素子にダメージを与えることなくＣｕワイヤをボンディングできる構造が求められている。
特許文献１では、パワー半導体素子の電極にＮｉ／Ｐｄ／Ａｕを成膜し、ワイヤボンディング時にパワー半導体素子にダメージが生じることを防ぐ発明が開示されている。また、特許文献２では、素子に硬度の高いＷ、Ｃｏ、Ｍｏ、Ｔｉ、Ｔａの保護膜を設け、その上にＣｕを成膜することで接合性とダメージ抑制効果を両立する発明が開示されている。
特開２０１３−００４７８１号公報（段落００１９、図２） 特開２０１４−０８２３６７号公報（段落００２０、図１）
しかしながら、特許文献１においては、無電解Ｎｉめっき/Ｐｄ/Ａｕと成膜を行っているが、Ｎｉめっきは膜応力が大きいため、パワー半導体で使用される大面積の素子でダメージ抑制効果を最大限発揮させるため膜厚を大きくすると、反りや剥離が生じるという問題があった。また、膜応力が大きいため、ボンディング時の応力によりＮｉめっき膜が割れるという問題があった。
また、特許文献２においては、パワー半導体素子の電極上にワイヤボンディング時にパワー半導体素子にダメージが入らないようにＷなどを成膜し、緩衝材として機能させている。しかし、Ｗなどの金属を成膜するにはスパッタを用いる他なく、ダメージ抑制効果を大きくするために膜厚を大きくすると、生産性に乏しくなるという問題があった。さらに、この膜構成に対しＣｕワイヤをボンディングした場合、線膨張係数の差による熱応力の影響を受け、Ｃｕワイヤ中にクラックや、金属膜に剥離が生じるといった問題があった。
本発明は、上記のような問題点を解決するためになされたものであり、Ｃｕワイヤでボンディングする場合に、半導体素子へのダメージを抑制できるパワー半導体装置を提供することを目的とする。
本発明にかかるパワー半導体装置は、パワー半導体素子と、パワー半導体素子上に設けられた第一電極層と、第一電極層上に設けられた第一電極層よりも硬度の低いＣｕを主成分とする第二電極層と、第二電極層に接続されたＣｕを主成分とするボンディングワイヤとを備えたことを特徴とする。
この発明によれば、硬度の低い接合性に優れた層を電極層の最表面に設けたことで、パワー半導体素子にＣｕワイヤでボンディングする場合であっても、パワー半導体素子へのダメージを抑制して接合でき、信頼性に優れた配線を実現できる。また、表面電極の剥離や割れを抑制でき、生産性の向上を図ることができる。
本発明の実施の形態１によるパワー半導体装置の構成を示す断面模式図である。 本発明の実施の形態１によるパワー半導体装置の要部の構成を示す拡大断面図である。 本発明の実施の形態２によるパワー半導体装置の要部の構成を示す拡大断面図である。 本発明の実施の形態３によるパワー半導体装置の要部の構成を示す拡大断面図である。 本発明の実施の形態４によるパワー半導体装置の要部の構成を示す拡大斜視図である。 本発明の実施の形態４によるパワー半導体装置の要部の構成を示す拡大断面図である。 本発明の実施の形態４によるパワー半導体装置の要部の他の構成を示す拡大平面図である。 本発明の実施の形態４によるパワー半導体装置の要部の他の構成を示す拡大断面図である。 本発明の実施の形態５によるパワー半導体装置の要部の構成を示す拡大断面図である。
実施の形態１．
本発明の実施の形態１であるパワー半導体装置について、図を参照しながら以下に説明する。図１は、本発明の実施の形態１によるパワー半導体装置の構成を示す断面模式図ある。
図１に示すように、パワー半導体装置１００は、ベース板１と、ベース板１上に接合されたセラミック基板２と、セラミック基板２上に配置されているパワー半導体素子４と、パワー半導体素子４の表面電極４１ａとセラミック基板２上に形成された回路パターンである電極層２２ｃとをボンディングするワイヤ６とから構成される。
ベース板１は、放熱板としてＣｕ製のものを用いた。ベース板１上には、はんだ（Ｓｎ−Ａｇ−Ｃｕ系）３によりセラミック基板２が接合されている。ベース板１は、熱伝達率の高い材料であればよく、Ａｌ製などを用いてもよい。また、絶縁基板と一体になったベース基板でもよい。はんだ３は、Ｓｎ−Ａｇ−Ｃｕ系としたが、ベース板１とセラミック基板２とを接合し、放熱性を確保できるのであれば、Ｓｎ−Ａｇ−Ｃｕ−Ｓｂ系はんだやＰｂ入りはんだなどを用いてもよい。また、Ａｇやその他の粒子を用いたシンター接合や、放熱シートや放熱グリスによる接続としてもよい。
セラミック基板２は、ＡｌＮ製の基材２１の両面にＣｕ製の導体層２２ａ、２２ｂ、２２ｃが積層されている。セラミック基板２の裏面側の電極層２２ｂがベース板１上にはんだ３により接合され、表面側の導体層２２ａにはパワー半導体素子４が配置されている。また、セラミック基板２上の回路パターンである電極層２２ｃは、パワー半導体素子４の表面電極４１ａとワイヤ６でボンディングされている。基材２１は、絶縁性を確保できるものであれば、Ａｌ２Ｏ３製やＳｉ３Ｎ４製などでもよい。
パワー半導体素子４は、Ｓｉ製のＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）が用いられ、裏面電極４１ｂがセラミック基板２上の導電層２２ａにＡｇシンター材５によりダイボンドされている。表面電極４１ａは、セラミック基板２上の回路パターンであるソースパッドへの主配線、ゲート配線、各種センスパッドへの配線を含むすべての表面側の電極層２２ｃとワイヤ６でウェッジボンディングによりボンディングされている。ワイヤ６は、Ｃｕを主成分とする直径がφ４００μｍのものを用いた。
パワー半導体素子４はＩＧＢＴとしたが、ＩＣ（Ｉｎｔｅｇｒａｔｅｄ Ｃｉｒｃｕｉｔ）やサイリスタ、ＭＯＳＦＥＴ（Ｍｅｔａｌ Ｏｘｉｄｅ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）でもよい。ＳＢＤ（Ｓｃｈｏｔｔｋｙ Ｂａｒｒｉｅｒ Ｄｉｏｄｅ）やＪＢＳ（Ｊｕｎｃｔｉｏｎ Ｂａｒｒｉｅｒ Ｓｃｈｏｔｔｋｙ）などのダイオードでもよい。また、パワー半導体以外の半導体パッケージに適用してもよい。また、厚さは１００μｍとしたが、これに限るものではない。パワー半導体素子４のダイボンドはＡｇシンターとしたが、はんだ付けでもよい。また、ＣｕなどＡｇ以外の材料を用いたシンター接合でもよい。
ワイヤ６は、Ｃｕを主成分とする直径がφ４００μｍのものを用いたが、これに限るものではない。ゲート配線用のワイヤ６とセンスパッドへの配線用のワイヤ６のみ線径の小さいワイヤとするなど、異なる線径を用いてもよい。また、ゲート配線用のワイヤ６のみ、従来のＡｌワイヤやＡｌを主成分としたＡｌ合金ワイヤとしてもよい。ワイヤ６の接合はウェッジボンディングとしたが、ボールボンディングや超音波接合でもよい。また、ソースパッドへの主配線に関してもＣｕを主成分とするワイヤ６に限らず、ＡｌやＡｇなどを主成分とした純金属や合金でもよい。さらに、ワイヤ６ではなく、リボンやリードフレームを超音波接合してもよい。
図２は、本発明の実施の形態１によるパワー半導体装置１００の要部の構成を示す模式図であり、図１の領域Ａを拡大した断面図である。図２に示すように、パワー半導体素子４の表面電極４１ａは、Ｃｕ層８とＡｌ層７の複数の金属層で構成される。Ｃｕ層８は、さらにビッカース硬度が７０〜１５０Ｈｖの柔らかいＣｕを主成分とする無電解めっきで形成されたＣｕ層８２と、ビッカース硬度が２００〜３５０Ｈｖの硬いＣｕを主成分とする無電解めっきで形成されたＣｕ層８１とからなる。つまり、この複数の金属層の最表面はビッカース硬度が７０〜１５０Ｈｖの柔らかいＣｕを主成分とする無電解めっきで形成されたＣｕ層８２であり、その下にはビッカース硬度が２００〜３５０Ｈｖの硬いＣｕを主成分とする無電解めっきで形成されたＣｕ層８１がある。さらにその下にＡｌを主成分とするＡｌ層７がスパッタにより成膜されている。それぞれの膜厚は、Ａｌ層７が０．１〜５μｍ、Ｃｕ層８１は５〜２０μｍ、Ｃｕ層８２は５〜２０μｍとした。表面電極４１ａの最表面に形成されたＣｕ層８２に、ワイヤ６がウェッジボンディングによりボンディングされる。
ビッカース硬度の違いは結晶粒径として現れ、硬度が高いほど結晶粒径は小さい。結晶粒径の違いはめっき液中のイオン濃度などでコントロールできる。硬いＣｕ層８１の平均結晶粒径は１μｍ以下であり、柔らかいＣｕ層８２の平均結晶粒径は５μｍ以上である。また、めっき後熱処理をすることでも結晶粒径は制御できる。
Ａｌ層７は、めっきの下地層としてスパッタにより成膜したが、めっきの下地層としてはＡｌ層７に限るものではなく、Ｃｕ層、Ｎｉ層などであってもよい。また、Ｃｕ層８１とＣｕ層８２は、無電解めっきに限らず、電解めっきやスパッタで形成してもよい。スパッタで形成する場合には、下地としてのＡｌ層７は省略してもよい。
このような構成とする理由を以下で説明する。表１に、発明者らが行ったＣｕめっきのビッカース硬度とワイヤ６との接合性評価結果を示す。表１に示す、超音波の出力は装置固有の値（表中では任意単位[a.u.]）であり、接合可能な超音波出力が低いほど、パワー半導体素子４に与えるダメージが小さいことを示す。また、接合可能な超音波のパワーの幅が広いほど接合条件のマージンが広いことを意味し、歩留りの向上が期待される。本実験における膜厚はすべて３０μｍである。
Figure 2016143557
その結果、表１に示すように、ビッカース硬度が７０〜１５０Ｈｖの間では、超音波出力が低パワーでもワイヤ６が接合して電気特性が得られる結果（○）となった。これに対し、ビッカース硬度が１６０Ｈｖ以上では、低パワーでのワイヤ６の接合が困難（−）になり、条件マージンが小さくなった。また、高パワーのときは、ビッカース硬度が１６０Ｈｖ以下では、パワー半導体素子４が破壊されて電気特性が得られない（×）、という結果となった。一方、ビッカース硬度が２００Ｈｖを超えると、ワイヤ６が接続して電気特性が得られ（○）、ダメージを抑制する効果が見られた。ただし、ビッカース硬度が４５０Ｈｖ以上では、めっき表面に割れ（△）が生じた。
次に、表２及び表３は、発明者らが行ったＣｕめっき厚とワイヤ６の接合性評価の結果であり、表２はＣｕめっきのビッカース硬度が１２０Ｈｖのとき、表３はＣｕめっきのビッカース硬度が２５０Ｈｖのときの結果を示す。
Figure 2016143557
Figure 2016143557
その結果、表２のＣｕめっきビッカース硬度が１２０Ｈｖのときは、めっき厚２０μｍ未満では、超音波出力が３０[a.u.]の場合を除き、パワー半導体素子４が破壊されて電気特性が得られない（×）、という結果となった。めっき厚２０μｍ以上では、ワイヤ６が接続して電気特性が得られ（○）、ダメージを抑制する効果が得られた。ただし、高パワーのときは、パワー半導体素子４が破壊されて電気特性が得られない（×）。
一方、表３のＣｕめっきビッカース硬度２５０Ｈｖのときは、膜厚５μｍ以下では、ワイヤ６の接合はできず（−）、また膜厚１０μｍ以上でも低パワーのときは、ワイヤ６の接合はできなかった（−）が、いずれの場合もパワー半導体素子４を破壊することはなかった。高パワーのときは、ワイヤ６が接続して電気特性が得られた（○）。
上記の結果から、これらのめっきを組み合わせることで、つまり、低パワーの超音波出力で接合可能な比較的柔らかいＣｕを主成分とする無電解めっきで形成されたＣｕ層８２と、パワー半導体素子４が破壊され難い比較的硬いＣｕを主成分とする無電解めっきで形成されたＣｕ層８１とを積層することで、パワー半導体素子４にダメージを与えることなくワイヤ６をウェッジボンディングできると考えられる。また、組み合わせることでＣｕ層８全体の膜厚が薄くなり、生産性に優れためっきとすることができる。製造ばらつきと量産性を考慮すれば、ビッカース硬度においては、無電解めっきで形成されたＣｕ層８２では７０〜１５０Ｈｖの範囲のときが好ましく、７０Ｈｖ未満ではＣｕの硬度の下限の限界であり、１５０Ｈｖを超えると低パワーでのワイヤ６の接合が困難となる。一方、無電解めっきで形成されたＣｕ層８１では２００〜３５０Ｈｖの範囲のときが好ましく、２００Ｈｖ未満では高パワーのときにパワー半導体素子４が破壊されて電気特性が得られなくなり、３５０Ｈｖを超えるとＣｕ層８１に割れが生じ易くなる。また、膜厚においては、Ｃｕ層８２では５〜２０μｍの範囲のときが好ましく、５μｍ未満ではパワー半導体素子４が破壊されて電気特性が得られなくなり、２０μｍを超えると生産性に乏しくなる。Ｃｕ層８１でも５〜２０μｍの範囲のときが好ましく、５μｍ未満ではパワー半導体素子４が破壊されて電気特性が得られなくなり、２０μｍを超えると生産性に乏しくなる。
また、本構成とすることで、パワー半導体素子４の表面電極４１ａとワイヤ６との接合部が、ＣｕとＣｕの接合となるため、線膨張係数の不整合を低減できる上に、同種金属であるため拡散によるカーケンダルボイドを形成しないといったメリットがある。その上、Ｃｕは、Ａｌに比べヤング率が高く線膨張係数の小さいパワー半導体素子に近い金属であり、高強度で塑性変形しにくいことから、温度サイクルによる熱ひずみが生じたときなどでも、Ｃｕ層８の剥離を抑制する効果があり、信頼性に優れた配線を実現できる。また、無電解めっきのみでプロセスが完了するため、膜厚を大きくすることがスパッタと比較して容易である。
なお、パワー半導体素子４へのダメージを抑制できる程度まで、柔らかい無電解めっきで形成されたＣｕ層８２の膜厚を厚くし、硬い無電解めっきで形成されたＣｕ層８１がない構造としてもよい。この場合、無電解めっき形成されたＣｕ層８２はＣｕを主成分とする膜であるため酸化しやすい。酸化膜が厚くなるとワイヤ６の接合性への悪影響が懸念されるため、Ｃｕ層８２の成膜工程からＣｕワイヤ６のボンディング工程までの間に有機溶媒を用いた酸化防止膜を成膜する工程を入れることで、ストレージによるワイヤボンディング性への影響を抑制することができる。
無電解めっきのビッカース硬度は、めっき液の添加物や処理温度を変更することで調整可能である。また、ビッカース硬度を測定する以外にも、断面を観察したときの結晶粒径が異なることから容易に異なる層が構成されていることが判別できる。
以上のように、本発明の実施の形態１におけるパワー半導体装置１００では、パワー半導体素子４の表面電極４１ａにおいて、第一電極層としてのＡｌ層７上にビッカース硬度が２００〜３５０ＨｖのＣｕを主成分とする無電解めっきで形成されたＣｕ層８１上に、Ｃｕ層８１より柔らかい、第二電極層としてのビッカース硬度が７０〜１５０ＨｖのＣｕを主成分とする無電解めっきで形成されたＣｕ層８２が積層して設けられ、Ｃｕ層８２とＣｕ製のワイヤ６とをワイヤボンディングするようにしたので、パワー半導体素子にＣｕワイヤでボンディングする場合であっても、パワー半導体素子へのダメージを抑制して接合でき、信頼性に優れた配線を実現できる。また、表面電極の剥離や割れを抑制でき、生産性の向上を図ることができる。
実施の形態２．
実施の形態１では、パワー半導体素子４の表面電極４１ａにおいて、無電解めっきで形成されたＣｕ層８１上に、Ｃｕ層８１より柔らかい無電解めっきで形成されたＣｕ層８２が積層する構成としたが、実施の形態２では、Ｃｕ層８１とＣｕ層８２との間に密着力を向上させる金属層を設けた場合について説明する。
図３は、本発明の実施の形態２によるパワー半導体装置の要部の構成を示す拡大断面図である。図３に示すように、パワー半導体素子４の表面電極４１ａは、無電解めっきで形成されたＣｕ層８１と、Ｃｕ層８１より柔らかい無電解めっきで形成されたＣｕ層８２との間、および無電解めっきで形成されたＣｕ層８１とＡｌ層７との間のどちらか一方、または両方に、密着力を向上させるためにＡｕからなる金属層８３を成膜する。なお、密着力を向上させることができればＡｕに限るものではなく、Ｐｄなどでもよい。その他の構成については、実施の形態１のパワー半導体装置１００と同様であり、その説明を省略する。
なお、金属膜の組み合わせによっては金属化合物層を形成することが懸念されるため、Ｎｉなどからなる拡散防止膜をさらに形成してもよい。また、Ｃｕ層８１やＣｕ層８２の無電解めっきの成膜を容易にするために、これらの層の下にＣｕを主成分とする０．１μｍ以下のシード層を予め成膜してもよい。
以上のように、本発明の実施の形態２におけるパワー半導体装置では、パワー半導体素子４の表面電極４１ａにおいて、Ｃｕ層８１と、Ｃｕ層８１より柔らかいＣｕ層８２との間、およびＣｕ層８１とＡｌ層７との間のどちらか一方、または両方に、Ａｕからなる金属層８３を成膜するようにしたので、パワー半導体素子にＣｕワイヤでボンディングする場合であっても、パワー半導体素子へのダメージを抑制できるだけでなく、表面電極の密着力を向上させることで、生産性の向上を図ることができるとともに、さらに信頼性に優れた配線を実現できる。
実施の形態３．
実施の形態１では、パワー半導体素子４の表面電極４１ａにおいて、無電解めっきで形成されたＣｕ層８１上に、Ｃｕ層８１より柔らかい無電解めっきで形成されたＣｕ層８２が積層する構成としたが、実施の形態３では、柔らかいＣｕ層の下が硬いＮｉ層である場合について説明する。
図４は、本発明の実施の形態３によるパワー半導体装置の要部の構成を示す拡大断面図である。図４に示すように、パワー半導体素子４の表面電極４１ａは、ビッカース硬度が７０〜１５０Ｈｖの柔らかいＣｕを主成分とする無電解めっきで形成されたＣｕ層８２の下には、Ｃｕ層８１の代わりに、Ｃｕ層８２と比べて硬いＮｉを主成分とする無電解めっきで形成されたＮｉ層８４が設けられている。Ｎｉ層８４の膜厚は、５〜２０μｍとした。その他の構成については、実施の形態１のパワー半導体装置１００と同様であり、その説明を省略する。
本構成とすることで、無電解めっきで形成されたＮｉ層８４によりパワー半導体素子４へのダメージを抑制し、無電解めっきで形成されたＣｕ層８２により接合性を確保することができる。また、Ａｌ層７とＣｕ層８２との間にＮｉを成膜することとなり、拡散を防止するバリア層として機能する。
なお、実施の形態２で示したように、本実施の形態３においても無電解めっきで形成されたＮｉ層８４と無電解めっきで形成されたＣｕ層８２との間、およびＮｉ層８４とＡｌ層７との間のどちらか一方、または両方に、ＡｕやＰｄなどからなる密着力向上のための金属層８３を０．１μｍ以下で成膜してもよい。
以上のように、本発明の実施の形態３におけるパワー半導体装置では、パワー半導体素子４の表面電極４１ａにおいて、ビッカース硬度が７０〜１５０Ｈｖの柔らかいＣｕを主成分とする無電解めっきで形成されたＣｕ層８２の下には、Ｃｕ層８２と比べて硬いＮｉを主成分とする無電解めっきで形成されたＮｉ層８４を設けるようにしたので、パワー半導体素子にＣｕワイヤでボンディングする場合であっても、パワー半導体素子へのダメージを抑制して接合でき、信頼性に優れた配線を実現できる。また、表面電極の剥離や割れを防ぎ、生産性の向上を図ることができる。
実施の形態４．
実施の形態１では、複数のワイヤ６を一つの表面電極４１ａにボンディングする構成としたが、実施の形態４では、複数のワイヤ６にそれぞれに対応する表面電極を設けた場合について説明する。
図５は、本発明の実施の形態４によるパワー半導体装置でのパワー半導体素子４の表面電極４１ａの構成を示す斜視図であり、図６は、図５のＢ−Ｂ矢視断面図である。また、図７および図８は、実施の形態４によるパワー半導体装置でのパワー半導体素子４の表面電極４１ａの他の構成を示す図である。
図５に示すように、パワー半導体素子４の表面電極４１ａは、複数のワイヤ６に対してそれぞれ接合部の面積の約１．２倍の面積で楕円形状に設けられている。表面電極４１ａのない領域全体には、ポリイミドからなる絶縁層９が配置されている。一般にパワー半導体素子においては、絶縁性を確保するためにパワー半導体素子の外周などにポリイミドが用いられるが、本実施の形態４においては、表面電極４１ａがない領域全面に成膜している。また、表面電極４１ａは、図６に示すように、実施の形態１と同様に最表面はビッカース硬度が７０〜１５０Ｈｖの柔らかいＣｕを主成分とする無電解めっきで形成されたＣｕ層８２であり、その下にはビッカース硬度が２００〜３５０Ｈｖの硬いＣｕを主成分とする無電解めっきで形成されたＣｕ層８１がある。さらにその下にＡｌを主成分とするＡｌ層７が成膜されている。表面電極４１ａの最表面に形成されたＣｕ層８２に、ワイヤ６がウェッジボンディングによりボンディングされる。その他の構成についても、実施の形態１のパワー半導体装置１００と同様であり、その説明を省略する。
本構成とすることで、Ｓｉ製のパワー半導体素子４やＡｌＮ製のセラミック基板２などの低線膨張係数の材料と線膨張係数の大きい表面電極４１ａとの不整合に対し、熱応力を分散させることが可能となるため、剥がれを抑制でき、信頼性の向上が可能となる。また、ポリイミドからなる絶縁層９がマスクとして機能するため、表面電極４１ａを格子状に配置するための写真製版やエッチングといった工程を追加することなく、パターンを形成することが可能であり、生産性に優れている。さらに、Ａｌ層７を全面に成膜していることで、Ｃｕ層８と絶縁層９との間に隙間が生じることを防いでいる。
なお、表面電極４１ａのそれぞれの大きさは、ワイヤ６との接合部の面積の１〜１．５倍であればよく、形状は楕円に限らず、図７に示すように矩形でもよい（図７（ａ）参照）。また、その際、応力集中を避けるため、角にＲ（図７（ｂ）参照）や面取り(図７（ｃ）参照)などの処理を施してもよい。
また、絶縁層９としてポリイミドを用いたが、これに限るものではない。絶縁性を確保できる材料であればよく、窒化膜などでもよい。また、絶縁層９を最終的に残す構成としたが、レジストを塗布して表面電極４１ａを成膜し、成膜後にレジストを除去する方法でもよい。
また、表面電極４１ａの表面側の一部の層のみをそれぞれのワイヤ６に対応するように形成してもよい。例えば、図８（ａ）ではＡｌ層７の上にＣｕ層８（Ｃｕ層８１とＣｕ層８２）のみをそれぞれのワイヤ６に対応するように成膜して形成した場合を、図８（ｂ）ではＣｕ層８１の上に、Ｃｕ層８２のみをそれぞれのワイヤ６に対応するように成膜して形成した場合を示す。また、Ｃｕ層８の成膜まで完了してから、表面電極４１ａの表面側の一部の層のみをそれぞれのワイヤ６に対応するように残して形成してもよい。例えば、図８（ｃ）ではＣｕ層８（Ｃｕ層８１とＣｕ層８２）のみをそれぞれのワイヤ６に対応するように残して形成した場合を、図８（ｄ）ではＣｕ層８２のみをそれぞれのワイヤ６に対応するように残して形成した場合について示す。これらの場合、Ａｌ層７は０．１μｍ以上とすることが必要である。
以上のように、本発明の実施の形態４におけるパワー半導体装置では、パワー半導体素子４の表面電極４１ａ、または表面電極４１ａの表面側の一部の層が、複数のワイヤ６のそれぞれに対応して設けられ、表面電極４１ａの最表面のＣｕ層８２とそれぞれ対応するＣｕ製のワイヤ６とをワイヤボンディングするようにしたので、パワー半導体素子にＣｕワイヤでボンディングする場合であっても、パワー半導体素子へのダメージを抑制できるだけでなく、熱応力を分散させることが可能となるため、表面電極の剥がれを抑制でき、さらに信頼性に優れた配線を実現できる。また、生産性の向上を図ることができる。
実施の形態５．
実施の形態４では、Ａｌ層７の形状に合わせてＣｕ層８（Ｃｕ層８１とＣｕ層８２）を形成したが、実施の形態５では、Ｃｕ層８（Ｃｕ層８１とＣｕ層８２）が覆いかぶさるように形成した場合について説明する。
図９は、本発明の実施の形態５によるパワー半導体装置の要部の構成を示す拡大断面図である。図９に示すように、パワー半導体素子４の表面電極４１ａは、Ｃｕ層８（Ｃｕ層８１とＣｕ層８２）がＡｌ層７を覆うように絶縁層９上に１〜１０μｍ程度はみ出した状態で覆いかぶさっている。表面電極４１ａは、実施の形態４と同様に最表面はビッカース硬度が７０〜１５０Ｈｖの柔らかいＣｕを主成分とする無電解めっきで形成されたＣｕ層８２であり、その下にはビッカース硬度が２００〜３５０Ｈｖの硬いＣｕを主成分とする無電解めっきで形成されたＣｕ層８１がある。さらにその下にＡｌを主成分とするＡｌ層７が成膜されている。無電解めっき層８１は無電解めっき層８２上にめっきされているので、無電解めっき層８１も絶縁層９上に無電解めっき層８２と同じ、またはそれ以上覆いかぶさっている。その他の構成についても、実施の形態４のパワー半導体装置と同様であり、その説明を省略する。
以上のように、本発明の実施の形態５におけるパワー半導体装置では、パワー半導体素子４の表面電極４１ａが、Ｃｕ層８（Ｃｕ層８１とＣｕ層８２）がＡｌ層７を覆うように絶縁層９上にはみ出した状態で覆いかぶさるようにしたので、パワー半導体素子にＣｕワイヤでボンディングする場合であっても、パワー半導体素子へのダメージを抑制でき、熱応力を分散させることで表面電極の剥がれを抑制できるだけでなく、Ａｌが露出しないため、Ａｌのガルバニック腐食を防ぐことができ、さらに信頼性に優れた配線を実現できる。また、生産性の向上を図ることができる。
上述した各実施の形態におけるパワー半導体装置では、Ｃｕ製のワイヤ６によりワイヤボンディングするようにしたので、Ａｌ製のワイヤに比べて電気抵抗が小さく、電流容量の大きい配線となっている。そこで、パワー半導体素子４として、Ｓｉ製に比べてバンドギャップが大きいワイドバンドギャップ半導体により形成されたものを用いてもよい。ワイドバンドギャップ半導体としては、例えば、炭化珪素（ＳｉＣ）、窒化ガリウム（ＧａＮ）、ダイヤモンドなどが挙げられる。
このようなワイドバンドギャップ半導体によって形成されたパワー半導体素子は、耐電圧性が高く、許容電流密度も高い。また、耐熱性も高いため、放熱部材の冷却フィンの小型化や、空冷化が可能であるので、パワー半導体装置の一層の小型化が可能になる。
パワー半導体装置の小型化が進むと、放熱性を確保し、熱応力に対する長期信頼性への要求がさらに高度になる。このような要求に対しても、本発明のパワー半導体装置は、優れた効果を発揮する。
なお、本発明は、その発明の範囲内において、各実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略することが可能である。
４ パワー半導体素子、６ ワイヤ、７ Ａｌ層、８ Ｃｕ層、９ 絶縁層、４１ａ 表面電極、８１ Ｃｕ層、８２ Ｃｕ層、８３ 金属層、１００ パワー半導体装置。

Claims (22)

  1. パワー半導体素子と、
    前記パワー半導体素子上に設けられた第一電極層と、
    前記第一電極層上に設けられた前記第一電極層よりも硬度の低いＣｕを主成分とする第二電極層と、
    前記第二電極層に接続されたＣｕを主成分とするボンディングワイヤと
    を備えたことを特徴とするパワー半導体装置。
  2. 前記第一電極層は、ビッカース硬度が２００〜３５０Ｈｖであり、前記第二電極層は、ビッカース硬度が７０〜１５０Ｈｖであることを特徴とする請求項１に記載のパワー半導体装置。
  3. 前記第一電極層は、Ｃｕを主成分とする層であることを特徴とする請求項１または請求項２に記載のパワー半導体装置。
  4. 前記第一電極層は、下地層と前記下地層上に無電解めっきで形成されたＣｕを主成分とする層とであることを特徴とする請求項１または請求項２に記載のパワー半導体装置。
  5. 前記第二電極層は、前記第一電極層を下地として無電解めっきで形成されたＣｕを主成分とする層であることを特徴とする請求項４に記載のパワー半導体装置。
  6. 前記第一電極層は、下地層のみであり、前記第二電極層は、前記第一電極層を下地として無電解めっきで形成されたＣｕを主成分とする層であることを特徴とする請求項１または請求項２に記載のパワー半導体装置。
  7. 前記第一電極層は、平均結晶粒径が１μｍ以下であることを特徴とする請求項１から請求項６のいずれか１項に記載のパワー半導体装置。
  8. 前記第二電極層は、平均結晶粒径が５μｍ以上であることを特徴とする請求項１から請求項７のいずれか１項に記載のパワー半導体装置。
  9. 前記第一電極層は、膜厚が５〜２０μｍであることを特徴とする請求項１から請求項８のいずれか１項に記載のパワー半導体装置。
  10. 前記第二電極層は、膜厚が５〜２０μｍであることを特徴とする請求項１から請求項９のいずれか１項に記載のパワー半導体装置。
  11. 前記第一電極層の下地層は、膜厚が０．１〜５μｍであることを特徴とする請求項４または請求項５に記載のパワー半導体装置。
  12. 前記下地層は、Ａｌ、Ｃｕ、またはＮｉにより形成されたことを特徴とする請求項１１に記載のパワー半導体装置。
  13. 前記第一電極層と前記第二電極層との間に、Ａｕ、Ｐｄの少なくとも一方を含む金属膜が、０．１μｍ以下の膜厚で設けられたことを特徴とする請求項１から請求項１２のいずれか１項に記載のパワー半導体装置。
  14. 前記ボンディングワイヤは、複数設けられるとともに、少なくとも前記第二電極層が前記ボンディングワイヤのそれぞれに対応して複数設けられたことを特徴とする請求項１から請求項１３のいずれか１項に記載のパワー半導体装置。
  15. 少なくとも前記第二電極層は、前記ボンディングワイヤとの接続部の面積の１〜１．５倍の面積でそれぞれ設けられたことを特徴とする請求項１４に記載のパワー半導体装置。
  16. 少なくとも前記第二電極層は、形状が楕円または矩形でそれぞれ設けられたことを特徴とする請求項１４または請求項１５に記載のパワー半導体装置。
  17. 前記パワー半導体素子は、前記第一電極層および前記第二電極層の外周に絶縁層を設けたことを特徴とする請求項１４から請求項１６のいずれか１項に記載のパワー半導体装置。
  18. 前記絶縁層は、ポリイミドまたは窒化膜で設けられたことを特徴とする請求項１７に記載のパワー半導体装置。
  19. 前記第一電極層および前記第二電極層が、外周の前記絶縁層に覆いかぶさっていることを特徴とする請求項１７または請求項１８に記載のパワー半導体装置。
  20. 前記絶縁層に覆いかぶさっている領域は、外周の幅が１〜１０μｍであることを特徴とする請求項１９に記載のパワー半導体装置。
  21. 前記パワー半導体素子は、ワイドバンドギャップ半導体材料により形成されたことを特徴とする請求項１から請求項２０のいずれか１項に記載のパワー半導体装置。
  22. 前記ワイドバンドギャップ半導体材料は、炭化ケイ素、窒化ガリウム系材料、およびダイヤモンドのうちのいずれかであることを特徴とする請求項２１に記載のパワー半導体装置。
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