JP3767585B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP3767585B2 JP3767585B2 JP2003273455A JP2003273455A JP3767585B2 JP 3767585 B2 JP3767585 B2 JP 3767585B2 JP 2003273455 A JP2003273455 A JP 2003273455A JP 2003273455 A JP2003273455 A JP 2003273455A JP 3767585 B2 JP3767585 B2 JP 3767585B2
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Description
1b…半導体基板の基板裏面、4…裏面電極としてのコレクタ電極、
4b…コレクタ電極のNi膜、10…半導体装置としての半導体チップ、
11…Al電極、13…金属電極、13a…Niメッキ層、
13b…Auメッキ層、100…半導体ウェハ。
Claims (5)
- 半導体基板(1)における素子が形成された面である基板表面(1a)にアルミニウムからなるアルミニウム電極(11)を備え、前記半導体基板における前記基板表面とは反対側の基板裏面(1b)に裏面電極(4)を備えてなる半導体装置において、
前記アルミニウム電極の表面には、メッキ形成されたニッケルメッキ層(13a)を含む積層構造の外部接続用の金属電極(13)が形成されており、
前記裏面電極は物理的気相成長法により形成されたニッケル膜(4b)を含む積層構造の電極であり、前記ニッケル膜の膜応力が前記金属電極における前記ニッケルメッキ層の膜応力の3倍以上であることを特徴とする半導体装置。 - 前記ニッケル膜(4b)の膜応力が2.7×108Pa以上であり、前記ニッケルメッキ層(13a)の膜応力が8.9×107Pa以下であることを特徴とする請求項1に記載の半導体装置。
- 前記半導体基板(1)の厚さが200μm以下であることを特徴とする請求項1または2に記載の半導体装置。
- 前記半導体基板(1)の前記基板表面(1a)の全面積に対する前記アルミニウム電極(11)の占める占有面積の比率が30%以上であることを特徴とする請求項1ないし3のいずれか一つに記載の半導体装置。
- 前記金属電極(13)上にはSnを主成分とするはんだが接続されるものであり、前記ニッケルメッキ層(13a)の膜厚は少なくとも5μm以上に調整されていることを特徴とする請求項1ないし4のいずれか一つに記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2003273455A JP3767585B2 (ja) | 2003-07-11 | 2003-07-11 | 半導体装置 |
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JP2003273455A JP3767585B2 (ja) | 2003-07-11 | 2003-07-11 | 半導体装置 |
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JP2005033130A JP2005033130A (ja) | 2005-02-03 |
JP3767585B2 true JP3767585B2 (ja) | 2006-04-19 |
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JP2003273455A Expired - Lifetime JP3767585B2 (ja) | 2003-07-11 | 2003-07-11 | 半導体装置 |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4788390B2 (ja) * | 2005-06-07 | 2011-10-05 | 株式会社デンソー | 半導体装置の製造方法 |
JP2007194514A (ja) | 2006-01-23 | 2007-08-02 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP4973046B2 (ja) * | 2006-07-20 | 2012-07-11 | 株式会社デンソー | 半導体装置の製造方法 |
JP5684230B2 (ja) * | 2009-04-08 | 2015-03-11 | エフィシエント パワー コンヴァーション コーポレーション | 電気的に絶縁された裏面を有するバンプ付き自己分離型GaNトランジスタチップ |
JP5575444B2 (ja) * | 2009-09-29 | 2014-08-20 | 富士電機株式会社 | 半導体装置の製造方法 |
JP5672685B2 (ja) * | 2009-09-29 | 2015-02-18 | 富士電機株式会社 | 半導体装置の製造方法 |
KR101998340B1 (ko) * | 2012-07-18 | 2019-07-09 | 삼성전자주식회사 | 전력 소자 모듈 및 그 제조 방법 |
EP2993690A4 (en) * | 2013-11-22 | 2017-01-18 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and method for producing silicon carbide semiconductor device |
JP2015109334A (ja) * | 2013-12-04 | 2015-06-11 | 株式会社デンソー | 半導体装置 |
JP6300236B2 (ja) * | 2015-02-26 | 2018-03-28 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法および電力変換装置 |
DE102015104570B4 (de) * | 2015-03-26 | 2019-07-11 | Infineon Technologies Ag | Leistungs-chip und chipanordnung |
WO2016163319A1 (ja) * | 2015-04-06 | 2016-10-13 | 三菱電機株式会社 | 半導体素子及びその製造方法 |
JP6698499B2 (ja) | 2016-11-15 | 2020-05-27 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS58122782A (ja) * | 1982-01-14 | 1983-07-21 | Nippon Telegr & Teleph Corp <Ntt> | ダイオ−ド |
JPS63305532A (ja) * | 1987-06-05 | 1988-12-13 | Toshiba Corp | バンプの形成方法 |
JPH0784647B2 (ja) * | 1988-09-15 | 1995-09-13 | 日本電装株式会社 | ニッケル膜およびそれを形成するスパッタリング方法 |
JPH06216065A (ja) * | 1993-01-20 | 1994-08-05 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP3601432B2 (ja) * | 2000-10-04 | 2004-12-15 | 株式会社デンソー | 半導体装置 |
JP2003110064A (ja) * | 2001-07-26 | 2003-04-11 | Denso Corp | 半導体装置 |
JP2004221416A (ja) * | 2003-01-16 | 2004-08-05 | Toyota Industries Corp | 半導体装置の製造方法及びその半導体装置 |
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