JP2007005368A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】 半導体基板1fの主面1aに形成した第1メタル膜1hおよび裏面1bに形成した第2メタル膜1jそれぞれの上に、両面同時に無電解のNiめっき膜1pと無電解のAuめっき膜1qを順次形成することにより、半導体基板1fの主面1aと裏面1bの両面において半田接続を可能にすることができる。これにより、大電流が流れる主面1a側のソース電極1cにおいても半田を介してリードと接続することができ、寄生抵抗、寄生インダクタンスおよび熱抵抗を下げることができる。その結果、半導体装置6の性能の向上を図ることができる。
【選択図】 図3
Description
図1は本発明の実施の形態の半導体装置が組み込まれた半導体パッケージの構造の一例を示す断面図、図2は図1に示す半導体パッケージにおける半導体装置の各電極の接続状態の一例を示す拡大部分断面図、図3は図1に示す半導体装置の主面の電極と裏面の電極の構造の一例を示す拡大部分断面図、図4は図3に示す主面と裏面の電極の形成方法の手順の一例を示すプロセスフロー図である。また、図5は第1の変形例の半導体装置の主面の電極と裏面の電極の構造を示す拡大部分断面図、図6は第2の変形例の半導体装置の主面の電極と裏面の電極の構造を示す拡大部分断面図、図7は第3の変形例の半導体装置の主面の電極と裏面の電極の構造を示す拡大部分断面図である。
1a 主面
1b 裏面
1c ソース電極
1d ゲート電極
1e ドレイン電極
1f 半導体基板
1g 絶縁膜
1h 第1メタル膜
1i 保護膜
1j 第2メタル膜
1k 第1Al層
1m Ti層
1n 第2Al層
1p Niめっき膜
1q Auめっき膜
1r NiSi層
1s Al層
1t Mo層
2 封止体
2a 裏面
3 ワイヤ
4 半田
5a,5b,5c リード
6 半導体装置
7 半導体パッケージ
Claims (5)
- (a)主面と、前記主面と対向する裏面とを有する半導体基板を準備する工程と、
(b)前記半導体基板に半導体素子を形成する工程と、
(c)前記半導体基板の前記主面に、Alを主成分とし、かつ前記半導体素子と電気的に接続する第1メタル膜を形成する工程と、
(d)前記半導体基板の前記裏面に、第1Al層/Ti層/第2Al層からなる第2メ
タル膜を、前記第1Al層の厚さ<前記第2Al層の厚さとなるように形成する工程と、
(e)前記第2メタル膜を熱処理する工程と、
(f)前記第1および第2メタル膜上に無電解のNiめっき膜を形成する工程と、
(g)前記主面と裏面の前記Niめっき膜上に無電解のAuめっき膜を形成する工程とを有することを特徴とする半導体装置の製造方法。 - (a)主面と、前記主面と対向する裏面とを有する半導体基板を準備する工程と、
(b)前記半導体基板に半導体素子を形成する工程と、
(c)前記半導体基板の前記主面に、Alを主成分とし、かつ前記半導体素子と電気的に接続する第1メタル膜を形成する工程と、
(d)前記半導体基板の前記裏面に、NiSi層/Ti層/Al層からなる第2メタル膜を形成する工程と、
(e)前記第1および第2メタル膜上に無電解のNiめっき膜を形成する工程と、
(f)前記主面と裏面の前記Niめっき膜上に無電解のAuめっき膜を形成する工程とを有し、
前記(d)工程において、前記第2メタル膜のNiSi層を形成する際に、Ni層を形成した後に熱処理を行って前記NiSi層を形成することを特徴とする半導体装置の製造方法。 - (a)主面と、前記主面と対向する裏面とを有する半導体基板を準備する工程と、
(b)前記半導体基板に半導体素子を形成する工程と、
(c)前記半導体基板の前記主面に、Alを主成分とし、かつ前記半導体素子と電気的に接続する第1メタル膜を形成する工程と、
(d)前記半導体基板の前記裏面に、NiSi層/Mo層/Al層からなる第2メタル膜を形成する工程と、
(e)前記第1および第2メタル膜上に無電解のNiめっき膜を形成する工程と、
(f)前記主面と裏面の前記Niめっき膜上に無電解のAuめっき膜を形成する工程とを有し、
前記(d)工程において、前記第2メタル膜のNiSi層を形成する際に、Ni層を形成した後に熱処理を行って前記NiSi層を形成することを特徴とする半導体装置の製造方法。 - (a)主面と、前記主面と対向する裏面とを有する半導体基板を準備する工程と、
(b)前記半導体基板に半導体素子を形成する工程と、
(c)前記半導体基板の前記主面に、Alを主成分とし、かつ前記半導体素子と電気的に接続する第1メタル膜を形成する工程と、
(d)前記半導体基板の前記裏面に、第1Al層/第2Al層からなる第2メタル膜を、前記第1Al層の厚さ<前記第2Al層の厚さとなるように形成する工程と、
(e)前記第1および第2メタル膜上に無電解のNiめっき膜を形成する工程と、
(f)前記主面と裏面の前記Niめっき膜上に無電解のAuめっき膜を形成する工程とを有し、
前記(d)工程において、前記第1Al層を形成した後に前記第1Al層を熱処理し、その後、前記第1Al層上に前記第2Al層を形成することを特徴とする半導体装置の製造方法。 - (a)主面と、前記主面と対向する裏面とを有する半導体基板を準備する工程と、
(b)前記半導体基板に半導体素子を形成する工程と、
(c)前記半導体基板の前記主面に、Alを主成分とし、かつ前記半導体素子と電気的に接続する第1メタル膜を形成する工程と、
(d)前記半導体基板の前記裏面に、第1Al層/Ti層/第2Al層からなる第2メ
タル膜を、前記第1Al層の厚さ<前記第2Al層の厚さとなるように形成する工程と、
(e)前記第2メタル膜を熱処理する工程と、
(f)前記第1および第2メタル膜上に無電解のNiめっき膜を形成する工程と、
(g)前記主面と裏面の前記Niめっき膜上に無電解のAuめっき膜を形成する工程と、
(h)前記主面と裏面の前記Auめっき膜上にそれぞれ半田を介してリードを接続する工程とを有することを特徴とする半導体装置の製造方法。
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JP2009111187A (ja) * | 2007-10-30 | 2009-05-21 | Denso Corp | 半導体装置 |
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WO2009142077A1 (ja) * | 2008-05-22 | 2009-11-26 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
US8198104B2 (en) | 2009-03-23 | 2012-06-12 | Fuji Electric Co., Ltd. | Method of manufacturing a semiconductor device |
US8558381B2 (en) | 2009-03-23 | 2013-10-15 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
JP2016157882A (ja) * | 2015-02-26 | 2016-09-01 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法および電力変換装置 |
DE102016201071A1 (de) | 2015-06-23 | 2016-12-29 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
CN110178202A (zh) * | 2017-01-13 | 2019-08-27 | 三菱电机株式会社 | 半导体装置及其制造方法 |
DE102023113753A1 (de) | 2022-05-25 | 2023-11-30 | Renesas Electronics Corporation | Halbleitervorrichtung und verfahren zu ihrer herstellung |
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CN105931954A (zh) * | 2015-02-26 | 2016-09-07 | 株式会社日立功率半导体 | 半导体装置、半导体装置的制造方法以及电力变换装置 |
DE102016201071B4 (de) | 2015-06-23 | 2022-03-17 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
US10347725B2 (en) | 2015-06-23 | 2019-07-09 | Mitsubishi Electric Corporation | Semiconductor device that facilitates a reduction in the occurrences of cracking in a semiconductor layer accompanying thermal stress |
DE102016201071A1 (de) | 2015-06-23 | 2016-12-29 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
CN110178202A (zh) * | 2017-01-13 | 2019-08-27 | 三菱电机株式会社 | 半导体装置及其制造方法 |
DE112017006825T5 (de) | 2017-01-13 | 2019-10-02 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zum Herstellen derselben |
US10896863B2 (en) | 2017-01-13 | 2021-01-19 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
CN110178202B (zh) * | 2017-01-13 | 2023-10-27 | 三菱电机株式会社 | 半导体装置及其制造方法 |
DE102023113753A1 (de) | 2022-05-25 | 2023-11-30 | Renesas Electronics Corporation | Halbleitervorrichtung und verfahren zu ihrer herstellung |
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