CN105931954A - 半导体装置、半导体装置的制造方法以及电力变换装置 - Google Patents

半导体装置、半导体装置的制造方法以及电力变换装置 Download PDF

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Publication number
CN105931954A
CN105931954A CN201610104398.2A CN201610104398A CN105931954A CN 105931954 A CN105931954 A CN 105931954A CN 201610104398 A CN201610104398 A CN 201610104398A CN 105931954 A CN105931954 A CN 105931954A
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metal level
semiconductor
layer
semiconductor device
electrode
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CN201610104398.2A
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古川智康
白石正树
中野广
守田俊章
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Hitachi Power Semiconductor Device Ltd
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Hitachi Power Semiconductor Device Ltd
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Publication of CN105931954A publication Critical patent/CN105931954A/zh
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    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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Abstract

本发明提供能减低成膜的Ni电极膜的膜缺损的半导体装置、半导体装置的制造方法以及电力变换装置。半导体装置(100)在形成半导体元件(150)的半导体基板(108)的n+型半导体层(108c)的第1表面(108d)具备：第1半导体芯片的电极结构体(151)，其与该半导体元件(150)电连接，按照Al或Al合金所构成的第1Al金属层(105)、Cu扩散防止层(107)、Al或Al合金所构成的第2Al金属层(106)、以及Ni层(104)的顺序将它们形成；和导电构件(102)，其配置在Ni层(104)的表面(104a)，经由铜烧结层(103)与第1半导体芯片的电极结构体(151)接合，第2Al金属层(106)的表面(106a)的Al晶粒的结晶面方位主要为(110)面。

Description

半导体装置、半导体装置的制造方法以及电力变换装置
技术领域
本发明涉及半导体装置、半导体装置的制造方法以及电力变换装置。
背景技术
半导体装置在系统LSI(Large Scale Integration，大规模集成电路)、电力变换装置、混合动力汽车等控制装置等广泛的领域中使用。在该半导体装置中，例如在电子部件的电极端子与电路基板上的电路图案的电极端子的电接合中，基于含铅的「焊料」或「焊料合金」的技术占主流。
从地球环境保护的观点出发，严格限制铅的使用，限制铅的使用而以不含铅的材料进行电极等的接合的开发不断推进。特别关于「高温焊料」，尚未找出成为其代替的有效的材料。在安装中，由于使用「无铅的分层焊料」必不可缺，因此期望取代该「高温焊料」的材料的出现。
根据这样的背景，作为取代「高温焊料」的材料，提出使用金属粒子和有机化合物的复合材料来接合电极的接合材料。
在专利文献1中，作为能相对于Ni或Cu电极得到卓越的接合强度的接合技术，记载了使用包含氧化铜(CuO)粒子和有机物所构成的还原剂的接合材料在还原气氛下进行接合的半导体装置。专利文献1所记载的半导体装置在加热还原时使100nm以下的铜粒子生成，使铜粒子彼此烧结而接合。专利文献1所记载的利用氧化铜(CuO)粒子的接合技术和现有的纳米粒子接合比较，能改善相对于Ni或Cu的接合性，能期待作为Ni电极或Cu电极用的接合材料。能使例如电力变换装置的逆变器中所使用的IGBT(Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管)或续流二极管等的功率半导体芯片的Ni电极借助由铜烧结层所构成的接合层与连接端子电连接。
功率半导体芯片的Ni电极有在Al金属的表面上用例如无电解镀法使Ni层生长的Ni电极形成方法。
在专利文献2中，记载了经由焊料接合导体构件的构成的半导体装置。专利文献2所记载的半导体装置在半导体基板的表面上形成Al电极，Al电极分为第1Al金属层和第2Al金属层。并且，在第1Al金属层与第2Al金属层间配置异种材质层，在Al表面的结晶方位主要是(111)面时，在其上形成的Ni镀层变得最均质或最高密度。
现有技术文献
专利文献
专利文献1：JP特开2008-244242号公报
专利文献2：JP专利4973046号公报
但是，本发明的发明者们研讨的结果，专利文献2的Al表面的结晶方位主要为(111)面的稳定的成膜被判定为困难。由于得不到Al表面的结晶方位主要为(111)面的稳定的成膜，因此Ni镀层的厚度和密度变得不均质，有产生针孔状的Ni膜缺损的课题。
另外，若在半导体芯片的Ni电极有针孔状的Ni膜缺损，则在用铜烧结层所构成的接合层与连接端子电连接的情况下，铜会从接合层扩散到功率半导体芯片，有元件漏电流的增大、元件耐压的劣化、元件的特性变动这样的课题。
发明内容
本发明鉴于这样的状况而提出，目的在于，提供能减低成膜的电极膜的膜缺损的半导体装置、半导体装置的制造方法以及电力变换装置。
为了解决上述课题，本发明的半导体装置特征在于，在形成半导体元件的半导体基板的第1表面具备：第1半导体芯片的电极结构体，其与所述半导体元件电连接，按照Al或Al合金所构成的第1Al金属层、Cu扩散防止层、Al或Al合金所构成的第2Al金属层、以及金属层的顺序将它们形成；和导电构件，其配置在所述第1半导体芯片的电极结构体中的所述金属层的表面，经由铜烧结层与所述第1半导体芯片的电极结构体接合，所述第2Al金属层的表面的Al晶粒的结晶面方位主要为(110)面。
另外，本发明的半导体装置的制造方法特征在于，具有：准备形成了所述半导体元件的所述半导体基板的工序；在所述半导体基板的表面形成所述第1Al金属层的工序；在所述第1Al金属层的表面形成确保所述Al金属层的导电性并防止所述铜烧结层的Cu扩散的Cu扩散防止层的工序；在所述Cu扩散防止层的表面，形成由与所述第1Al金属层同一材料所构成的所述第2Al金属层的工序；在所述第2Al金属层上形成所述金属层的工序；通过将所述半导体基板芯片化来形成所述第1半导体芯片的电极结构体的工序；和经由所述铜烧结层将所述第1半导体芯片的电极结构体相互接合的工序。
另外，本发明的电力变换装置特征在于，具备所述半导体装置。
发明的效果
根据本发明，能提供能减低成膜的电极膜的膜缺损的半导体装置、半导体装置的制造方法以及电力变换装置。
附图说明
图1是本发明的第1实施方式所涉及的半导体装置的截面图。
图2(a)～(c)是表示上述第1实施方式所涉及的半导体装置的制造方法的各工序的图。
图3(a)～(c)是表示上述第1实施方式所涉及的半导体装置的制造方法的各工序的图。
图4是表示上述第1实施方式所涉及的半导体装置的基于电解镀时的锌酸盐处理的第2Al金属层的平均晶粒的大小与削除量的关系的特性图。
图5是本发明的第2实施方式所涉及的半导体装置的截面图。
图6是本发明的第3实施方式所涉及的半导体装置的构成图。
图7是图6的A-A截面图。
图8是本发明的第4实施方式所涉及的半导体装置的构成图。
图9的图8的A-A截面图。
图10是本发明的第5实施方式所涉及的电力变换装置的电路图。
标号的说明
90 Si晶片
91 阳极P型半导体层
92 阴极n+层
100、200、300、400 半导体装置
101 陶瓷基板
102 导电构件
103 铜烧结层
104 Ni层(金属层)
104a Ni层的表面
105 第1Al金属层
106 第2Al金属层
106a 第2Al金属层的表面
107 Cu扩散防止层
108 半导体基板
108a p型半导体层
108b n-漂移层
108c n+型半导体层
108d 半导体基板的第1表面
108e 半导体基板的第2表面
109 阳极电极
110 绝缘氧化膜
111 钝化膜
112 阴极电极
113、119、403 绝缘膜
150 半导体元件
151 第1半导体芯片的电极结构体
152 第2半导体芯片的电极结构体
201 半导体LSI芯片
202 输入输出电极PAD
203 多层布线
204 基板
205 第1半导体LSI芯片
206 第2半导体LSI芯片
207 芯片间连接电极PAD
500 电力变换装置
501～506 电力开关元件
521～526 二极管
511～516 栅极电路
具体实施方式
以下参考附图详细说明本发明的实施方式。
(第1实施方式)
图1是本发明的第1实施方式所涉及的半导体装置的截面图。
本实施方式的半导体装置示出运用在功率半导体芯片的续流二极管中的情况下的截面结构。另外，以利用n型Si基板的二极管为基础进行说明，但并不限定于此。在利用p型Si基板的情况下也能同样处置。另外，在纵向流过电流的IGBT的电极结构中也能同样处置。
如图1所示那样，半导体装置100具备n型Si所构成的半导体基板108。半导体基板108从表面起依次具备p型半导体层108a、n-漂移层108b、高浓度的n型杂质区域所构成的n+型半导体层108c，形成半导体层所构成的半导体元件150。半导体基板108具有：形成第1半导体芯片的电极结构体151的第1表面108d、和形成阳极电极109的第2表面108e。
半导体装置100在形成半导体元件150的半导体基板108的n+型半导体层108c的第1表面108d，具备：第1半导体芯片的电极结构体151，其与该半导体元件150电连接，按照Al或Al合金所构成的第1Al金属层105、Cu扩散防止层107、Al或Al合金所构成的第2Al金属层106、以及Ni层104(金属层)的顺序形成它们；和导电构件102，其配置在Ni层104的表面104a，经由铜烧结层103与第1半导体芯片的电极结构体151接合。
特别地，第2Al金属层106的表面106a的Al晶粒的结晶面方位主要为(110)面。
另外，第1半导体芯片包含半导体基板108、和第1半导体芯片的电极结构体151而构成。
第1Al金属层105、Cu扩散防止层107、第2Al金属层106、以及Ni层104按照该顺序形成，构成半导体基板108的背面侧的阴极电极112。阴极电极112使用铜烧结层103与陶瓷绝缘基板101上的导电构件102接合。Ni层104例如是无电解Ni镀层。Ni层104是形成连接电极的金属层，除了可以是Ni以外，还可以是Cu或Cu合金。
半导体基板108的第2表面108e侧的阳极电极109具有Al或Al合金所构成的电极结构，一部分与半导体基板108的p型半导体层108a相接，另一部分与绝缘氧化膜110相接。另外，在绝缘氧化膜110上形成钝化膜111。钝化膜111例如由聚酰亚胺构成。
接下来说明本发明的第1实施方式的半导体装置100的制造方法。
[半导体装置100的制造方法]
图2以及图3是表示半导体装置100的制造方法的各工序的图。
<二极管(半导体元件150)制作工序>
图2(a)是本实施方式中的阳极P型半导体区域形成后的截面图。
首先准备用于制作二极管的Si晶片90。在Si晶片中，能使用具有与耐压相应的相对电阻的晶片。例如在具有1200V的耐压的二极管中，能使相对电阻为55Ωcm程度，在具有3.3kV的耐压的二极管中，能使相对电阻为250Ωcm程度。这时，Si晶片90的相对电阻较高，起到n-层的作用。以后将形成p型半导体层108a的Si晶片90称作n-漂移层108b。
在未图示的最初的工序中，在Si基板的表面整体通过热氧化形成氧化膜。接下来进行用于形成设置p型半导体层108a的区域的光刻工序。在该光刻工序中，通过在Si基板的表面涂布抗蚀材料，进行曝光、显影，形成让p型半导体层108a区域开口的抗蚀剂。之后离子注入p型杂质。p型杂质例如能举出硼。之后除去抗蚀剂，实施用于使杂质活性化的退火，由此如图2(a)所示那样，形成p型半导体层108a。
图2(b)是本实施方式中的接触部形成后的截面图，图2(c)是阳极电极形成后的截面图。
接下来，通过基于热氧化的氧化膜形成、以及化学气相生长(CVD：Chemical Vapor Deposition)法，在Si基板堆积绝缘氧化膜110，进行用于形成将p型半导体层108a和阳极电极109(参考图2(c))连接的接触部的光刻工序。涂布抗蚀材料，进行曝光、显影，将以此形成的抗蚀剂作为掩模，蚀刻绝缘氧化膜110，来如图2(b)所示那样形成将p型半导体层108a和阳极电极连接的接触部。接下来，用溅射法将Al或Al合金所构成的阳极电极109成膜，通过光刻工序对抗蚀剂进行图案形成，进行蚀刻，由此如图2(c)所示那样形成阳极电极109。
接下来形成表面保护膜111(参考图3)。作为保护膜的形成法，例如涂布含有聚酰亚胺的前体材料和感光材料的溶液，对端接区域曝光来使前体聚酰亚胺化，能由此形成保护膜。
接下来说明背面阴极侧制造工序。
<背面阴极侧制造工序>
图3(a)是本实施方式中的表面保护膜形成后的截面图。
首先研削n-漂移层108b的背面，减薄晶片厚度。晶片厚度根据耐压不同而不同，例如在1200V耐压品中为120μm程度，在3300V耐压品中为400μm程度。
之后从n-漂移层108b的背面侧对晶片整面进行n型杂质的离子注入。n型杂质例如能举出磷、砷等。
接下来，为了使离子注入的n型杂质活性化而进行激光退火，形成图3(a)所示的n+型半导体层108c。
<背面阴极电极112的制造工序>
接下来说明背面的阴极电极112的制造方法。
图3(b)是本实施方式中的n+型半导体层108c形成后的截面图。
如图3(c)所示那样，通过溅射按照背面电极的第1Al金属层105、Cu扩散防止层107、第2Al金属层106的顺序将它们成膜，第1Al金属层105例如成膜0.6μm的AlSi合金，Cu扩散防止层107例如成膜0.2μm的Ti，第2Al金属层106例如成膜2μm的AlSi合金。这时，作为第2Al金属层106，通过在Al晶粒的结晶面方位主要为(110)面、AlSi的平均晶粒的大小成为0.5μm以上的条件下进行溅射，如图3(c)所示那样形成第1Al金属层105、Cu扩散防止层107以及第2Al金属层106。关于AlSi的平均晶粒的大小为0.5μm以上这一点，在后面记述。
Al金属层105、Cu扩散防止层107以及第2Al金属层106溅射，在低温溅射条件下能使平均晶粒在晶片面内均匀，优选可以是200℃以下的成膜条件。
<Ni层104的形成工序>
图3(c)是本实施方式中的第2Al金属层106形成后的截面图。
如图1所示那样，用无电解镀法形成Ni层104。
在此，无电解镀时的锌酸盐处理，需要蚀刻第2Al金属层106。本发明的发明者们，关于电解镀时的锌酸盐处理，得出优选AlSi的平均晶粒的大小为0.5μm以上的见解。
图4是表示基于电解镀时的锌酸盐处理的第2Al金属层106的平均晶粒的大小与削除量的关系的特性图。
如图4所示那样，若第2Al金属层106主要在(110)面而AlSi的平均晶粒的大小成为0.5μm以上，则针孔的产生大幅减少。通过在AlSi的平均晶粒的大小成为0.5μm以上的条件下进行溅射，抑制了无电解镀时的锌酸盐处理所带来的AlSi电极的局部的削除，促进了均匀的Ni膜的生长，能减低Ni电极膜的针孔缺损。这里，若成为1.5μm以上，则削除量变得大致恒定。
另外，通过在背面的阴极电极112内设置Ti所构成的Cu扩散防止层107，在使用铜烧结层103所构成的接合层来与连接端子电连接的情况下，可防止铜从该接合层扩散到第1半导体芯片，提升了长期接合可靠性。
另外，在本实施例中，在Cu扩散防止层107中使用Ti，但同样能使用例如能在确保导电性不变的情况下削除Cu扩散防止层的TiN、TiW、W等材料。
<半导体装置100的形成>
接下来，通过划片将在到此为止说明的工序中形成的晶片芯片化。
在芯片化后，准备以导电构件102(例如Cu)形成了布线层的陶瓷绝缘基板101、和利用了氧化铜(CuO)粒子的接合剂，在还原气氛下施予多阶段加热和加压来将导电构件102和芯片背面的阴极电极112接合，形成图1所示的以铜烧结层103接合的半导体装置100。
通过以上的工序得到图1所示的半导体装置100。
如以上说明的那样，在本实施方式所涉及的半导体装置100中，在形成半导体元件150的半导体基板108的n+型半导体层108c的表面，具备：第1半导体芯片的电极结构体151，其与该半导体元件150电连接，按照Al或Al合金所构成的第1Al金属层105、Cu扩散防止层107、Al或Al合金所构成的第2Al金属层106、以及Ni层104的顺序将它们形成；和导电构件102，其配置在Ni层104的表面，经由铜烧结层103与第1半导体芯片的电极结构体151接合，在第2Al金属层106的表面106a的Al晶粒的结晶面方位主要为(110)面。
如上述那样，在第2Al金属层106主要在(110)面而AlSi的平均晶粒的大小成为0.5μm以上的条件下进行溅射。由此抑制了无电解镀时的锌酸盐处理所引起的AlSi电极的局部的削除，促进了均匀的Ni膜的生长，能减低Ni电极膜的针孔缺损。因此能减低用无电解镀法在Al电极的表面上成膜得到的Ni电极膜的膜缺损。
另外，在现有技术中，Al表面的结晶方位主要为(111)面的稳定的成膜困难。与此相对，在本实施方式中，在第2Al金属层106的表面106a的Al晶粒的结晶面方位主要为(110)面。由于结晶面方位能主要使用(110)面，因此能容易地制作稳定的成膜。
在本实施方式中，通过在半导体芯片151的电极内设置Cu扩散防止层107，防止铜从铜烧结层103所构成的接合层扩散到第1半导体芯片，能实现提升了长期接合可靠性的半导体装置100。
(第2实施方式)
图5是本发明的第2实施方式所涉及的半导体装置200的截面图。对与图1同一构成部分标注同一标号并省略重复部位的说明。本实施方式的半导体装置200是运用在功率半导体芯片的续流二极管的情况下的示例。本实施方式的半导体装置200，在纵向地流过电流的IGBT的电极结构中也能同样处置。
如图5所示那样，半导体装置200在形成半导体元件150的半导体基板108的第2表面108e，具备：第2半导体芯片的电极结构体152，其按照Al或Al合金所构成的第1Al金属层105、Cu扩散防止层107、Al或Al合金所构成的第2Al金属层106、以及Ni层104的顺序将它们形成；和导电构件102，其配置在第2半导体芯片的电极结构体152的Ni层104的表面104a，经由铜烧结层103与第2半导体芯片的电极结构体152接合，在第2Al金属层106的表面106a的Al晶粒的结晶面方位主要为(110)面。
另外，第2半导体芯片包含半导体基板108、和第2半导体芯片的电极结构体152而构成。
半导体基板108的第2表面108e上的第1Al金属层105、Cu扩散防止层107、第2Al金属层106、以及Ni层104按照该顺序形成，构成半导体基板108的表面侧的阴极电极113。Ni层104使用铜烧结层103与导电构件102接合。
如此，本实施方式的半导体装置200，在半导体基板108的两面形成第1半导体芯片的电极结构体151和第2半导体芯片的电极结构体152，导电构件102经由铜烧结层103与第1半导体芯片的电极结构体151以及第2半导体芯片的电极结构体152接合。
根据本实施方式，由于除了第1实施方式的效果以外，还在半导体基板108的两面设置同样的电极构成体，形成晶片正反对称性良好的电极膜，因此能减低电极膜的应力所引起的晶片翘曲，能提升制造性。
在将本实施方式的半导体装置200运用在功率半导体模块中的情况下，由于在半导体基板108的两面设置同样的电极构成体，形成晶片正反对称性良好的电极膜，因此能减小在高温环境下显著的各构件的热膨胀差所引起的热应力。理想地，通过使铜烧结层103的热膨胀系数和导电构件102的热膨胀系数一致，在铜烧结层103产生的热应力成为最小，提升了长期可靠性。
(第3实施方式)
图6以及图7是本发明的第3实施方式所涉及的半导体装置300的构成图，图6是半导体LSI芯片201的上表面图，图7是安装半导体LSI芯片201的情况下的图6的A-A截面图。对与图1同一构成部分标注同一标号并省略重复部位的说明。
如图6所示那样，半导体装置300在半导体LSI芯片201上形成晶体管、二极管、电阻元件等多个半导体元件，配置控制它们的输入输出电极PAD202。
如图7所示那样，半导体装置300具备：半导体LSI芯片201的半导体基板208(参考图7)；经由多层布线203与半导体LSI芯片201的多个电极连接的多个输入输出电极PAD202。
半导体LSI芯片201在半导体基板208上形成晶体管、二极管、电阻元件等的多个半导体元件(图示省略)。各半导体元件的电极等的布线，经由形成在绝缘氧化膜110内的多层布线203与输入输出电极PAD202电连接。半导体LSI芯片201的各半导体元件通过多层布线203以及输入输出电极PAD202与导电构件102连接。
输入输出电极PAD202，采用和图1的半导体装置100的第1半导体芯片的电极结构体151同样的构成。即，如图7所示那样，输入输出电极PAD202在露出在绝缘氧化膜110上的多层布线203的端面，与该多层布线203电连接，由按照Al或Al合金所构成的第1Al金属层105、Cu扩散防止层107、Al或Al合金所构成的第2Al金属层106、以及Ni层104的顺序将它们形成的半导体芯片所构成。Al金属层106的表面106a的Al晶粒的结晶面方位主要为(110)面。构成输入输出电极PAD202的半导体芯片的Ni层104，使用铜烧结层103与基板204上的导电构件102接合。
本实施方式的半导体装置300，由于在半导体LSI芯片201和输入输出电极PAD202的接合不使用焊料，因此无铅，有对环境良好的效果。另外，由于能减小在高温环境中显著的各构件的热膨胀差所引起的热应力，因此能实现能搭载在高温环境的场所的半导体装置300。
(第4实施方式)
图8以及图9是本发明的第4实施方式所涉及的半导体装置400的构成图，图8是半导体LSI芯片205、206的上表面图，图9是安装半导体LSI芯片205、206的情况下的图8的B-B截面图。对与图6以及图7同一构成部分标注同一标号并省略重复部位的说明。
如图8所示那样，半导体装置400采用使第1半导体LSI芯片205和第2半导体LSI芯片206为层叠结构的构成。
如图9所示那样，半导体装置300具备：第1半导体LSI芯片205；第2半导体LSI芯片206；经由多层布线203与半导体LSI芯片205的多个电极连接的多个输入输出电极PAD202；和将第1半导体LSI芯片205和第2半导体LSI芯片206电连接的芯片间连接电极PAD207。
在第1半导体LSI芯片205以及第2半导体LSI芯片206上(该基板上)分别形成晶体管、二极管、电阻元件等多个半导体元件(图示省略)。
配置将第1半导体LSI芯片205和第2半导体LSI芯片206电连接的芯片间连接电极PAD207，配置控制第1半导体LSI芯片205以及第2半导体LSI芯片206的半导体LSI芯片的输入输出电极PAD202。
芯片间连接电极PAD207，采用和所述的图6以及图7的半导体装置300的输入输出电极PAD202同样的构成。即，芯片间连接电极PAD207，在露出在绝缘氧化膜110上的多层布线203的端面与该多层布线203电连接，由按照Al或Al合金所构成的第1Al金属层105、Cu扩散防止层107、Al或Al合金所构成的第2Al金属层106、以及Ni层104的顺序将它们形成的半导体芯片所构成。Al金属层106的表面106a的Al晶粒的结晶面方位主要为(110)面。在构成一方的芯片间连接电极PAD207的半导体芯片的Ni层104形成铜烧结层103，使用铜烧结层103将第1半导体LSI芯片205和第2半导体LSI芯片206接合。
本实施方式的半导体装置400由于进一步在芯片间连接电极PAD207的接合不使用焊料，因此无铅，有对环境良好的效果。另外，由于能减小高温环境中显著的各构件的热膨胀差所引起的热应力，因此能实现能在高温环境的场所搭载的半导体装置400。
另外，在本实施方式中，能层叠多个半导体芯片，能实现封装的小型化。
(第5实施方式)
说明将本发明的半导体装置运用在电力变换装置中的第5实施方式。
图10是表示采用第1实施方式所涉及的半导体装置100的电力变换装置500的电路图。图10表示本实施方式的电力变换装置500的电路构成的一例、直流电源和三相交流电动机(交流负载)的连接的关系。
在本实施方式的电力变换装置500中，将第1实施方式的半导体装置100用作电力开关元件501～506。电力开关元件501～506例如是IGBT。
如图10所示那样，第5实施方式的电力变换装置500具备：一对直流端子的P端子531、N端子532；和交流输出的相数同数的交流端子的U端子533、V端子534、W端子535。
另外，具备由一对电力开关元件501以及502的串联连接构成、将与该串联连接点连接的U端子533作为输出的开关脚。另外，具备由与其相同构成的电力开关元件503以及504的串联连接构成、且将与该串联连接点连接的V端子534作为输出的开关脚。另外，具备由与其相同的构成的电力开关元件505以及506的串联连接构成、且将与该串联连接点连接的W端子535作为输出的开关脚。
电力开关元件501～506例如是IGBT。
电力开关元件501～506所构成的3相份的开关脚，与P端子531、N端子532的直流端子间连接，从未图示的直流电源被提供直流电力。电力变换装置500的3相的交流端子的U端子533、V端子534、W端子535作为三相交流电源与未图示的三相交流电动机连接。
在电力开关元件501～506分别逆并联地连接了二极管521～526。在IGBT所构成的电力开关元件501～506的各个栅极的输入端子，被栅极电路511～516控制。另外，栅极电路511～516被总括控制电路(未图示)总括地控制。
由栅极电路511～516分别总括、适宜地控制电力开关元件501～506，将直流电源Vcc的直流电力变换成三相交流电力，从U端子533、V端子534、W端子535输出。
通过将上述各实施方式所涉及的半导体装置运用在电力变换装置500中，提升了电力变换装置500的长期可靠性。另外，由于不使用焊料，因此无铅，有对环境良好的效果。另外，能搭载在高温环境的场所，且即使没有专用的冷却器也能确保长期的可靠性。
本发明涉及电子部件中的电接合部(例如半导体元件与电路构件的接合部)的接合层，由其适于运用在具有利用以氧化铜粒子为主要材料的接合材料进行接合的接合层的半导体装置中。
另外，在本实施方式中，作为向本发明的半导体装置的电力变换装置的运用例而说明了逆变器装置的情况，但并不限定于此，还能运用在直流-直流转换器、交流-直流转换器等其他电力变换装置中。
(其他实施方式)
以上参考附图详述了各实施方式，本发明并不限定于这些实施方式，也可以是不脱离本发明的要旨的范围的工序、制造、设计变更等，以下举出其示例。
例如，除了将半导体元件的第1导电型设为n型、将第2导电型设为p型的构成以外，将第1导电型设为p型、将第2导电型设为n型也同样成立。
另外，本发明并不限于功率半导体芯片的续流二极管、IGBT，只要是在Al金属层106的表面的Al晶粒的结晶面方位主要为(110)面的半导体装置即可，能运用在任何的半导体装置中。
另外，能将某实施方式的构成的一部分置换为其他实施方式的构成，另外，能在某实施方式的构成中加入其他实施方式的构成。
另外，关于各实施方式的构成的一部分，能进行其他构成的追加、删除、置换。另外，电气布线认为是说明上需要而示出，制品上不一定示出全部电气布线。

Claims (8)

1.一种半导体装置，其特征在于，在形成半导体元件的半导体基板的第1表面具备：
第1半导体芯片的电极结构体，其与所述半导体元件电连接，按照Al或Al合金所构成的第1Al金属层、Cu扩散防止层、Al或Al合金所构成的第2Al金属层、以及金属层的顺序将它们形成；和
导电构件，其配置在所述第1半导体芯片的电极结构体中的所述金属层的表面，经由铜烧结层与所述第1半导体芯片的电极结构体接合，
所述第2Al金属层的表面的Al晶粒的结晶面方位主要为(110)面。
2.根据权利要求1所述的半导体装置，其特征在于，
在所述半导体基板的第2表面还具备：
第2半导体芯片的电极结构体，其按照Al或Al合金所构成的第1Al金属层、Cu扩散防止层、Al或Al合金所构成的第2Al金属层、以及金属层的顺序将它们形成；和
导电构件，其配置在第2半导体芯片的电极结构体中的所述金属层的表面，经由铜烧结层与所述第2半导体芯片的电极结构体接合，
所述第2Al金属层的表面的Al晶粒的结晶面方位主要为(110)面。
3.一种半导体装置，其特征在于，具备：
形成在半导体基板的多个元件、和与该元件电连接的连接电极焊盘，
所述连接电极焊盘，在形成所述元件的半导体基板的表面具备：
第1半导体芯片的电极结构体，其与所述元件电连接，按照Al或Al合金所构成的第1Al金属层、Cu扩散防止层、Al或Al合金所构成的第2Al金属层、以及金属层的顺序将它们形成；和
导电构件，其配置在所述金属层的表面，经由铜烧结层与所述第1半导体芯片的电极结构体接合，
所述第2Al金属层的表面的Al晶粒的结晶面方位主要为(110)面。
4.根据权利要求1～3中任一项所述的半导体装置，其特征在于，
所述第2Al金属层的平均晶粒的大小为0.5μm以上。
5.一种半导体装置的制造方法，其特征在于，
制造权利要求1所述的半导体装置，具有如下工序：
准备形成了所述半导体元件的所述半导体基板的工序；
在所述半导体基板的表面形成所述第1Al金属层的工序；
在所述第1Al金属层的表面形成确保所述Al金属层的导电性并防止所述铜烧结层的Cu扩散的Cu扩散防止层的工序；
在所述Cu扩散防止层的表面，形成由与所述第1Al金属层同一材料所构成的所述第2Al金属层的工序；
在所述第2Al金属层上形成所述金属层的工序；
通过将所述半导体基板芯片化，来形成所述第1半导体芯片的电极结构体的工序；和
经由所述铜烧结层将所述第1半导体芯片的电极结构体相互接合的工序。
6.根据权利要求5所述的半导体装置的制造方法，其特征在于，
在形成所述第2Al金属层的工序中，所述第2Al金属层的平均晶粒的大小为0.5μm以上。
7.一种电力变换装置，其特征在于，具备：
一对直流端子；
与交流的相数同数的交流端子；和
电力变换单位，其连接在所述一对直流端子间，将各个开关元件和相反极性的二极管的并联电路串联连接2个而成，所述并联电路的相互连接点与不同的交流端子连接，且与交流的相数同数，
所述开关元件是权利要求1～3的任一项所述的半导体装置。
8.一种电力变换装置，其特征在于，具备：
一对直流端子；
与交流的相数同数的交流端子；和
电力变换单位，其连接在所述一对直流端子间，将各个开关元件和相反极性的二极管的并联电路串联连接2个而成，所述并联电路的相互连接点与不同的交流端子连接，且与交流的相数同数，
所述开关元件是权利要求4所述的半导体装置。
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