JP6300236B2 - 半導体装置、半導体装置の製造方法および電力変換装置 - Google Patents
半導体装置、半導体装置の製造方法および電力変換装置 Download PDFInfo
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- JP6300236B2 JP6300236B2 JP2015036099A JP2015036099A JP6300236B2 JP 6300236 B2 JP6300236 B2 JP 6300236B2 JP 2015036099 A JP2015036099 A JP 2015036099A JP 2015036099 A JP2015036099 A JP 2015036099A JP 6300236 B2 JP6300236 B2 JP 6300236B2
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Description
地球環境保全の観点から鉛の使用が厳しく制限されており、鉛の使用を制限して鉛を含まない材料で電極等の接合を行う開発が進められている。特に、「高温はんだ」に関してはその代替となる有効な材料がまだ見出されていない。実装においては「鉛フリーの階層はんだ」を用いることが必要不可欠なため、この「高温はんだ」に代わる材料の出現が望まれている。
このような背景から、「高温はんだ」に代わる材料として金属粒子と有機化合物の複合材料を用いて電極を接合する接合材料が提案されている。
特許文献2には、半田を介して導体部材が接合された構成の半導体装置が記載されている。特許文献2に記載の半導体装置は、半導体基板の表面上にAl電極が形成され、Al電極は、第1のAl金属層と、第2のAl金属層とに分かれている。そして、第1のAl金属層と第2のAl金属層との間に異種材質層が配置され、Al表面の結晶方位が主に(111)面のとき、その上に形成するNiメッキ層は最も均質あるいは高密度になるとしている。
また、半導体チップのNi電極にピンホール状のNi膜欠損があると、銅焼結層からなる接合層を用いて、電気的に接続端子に接続した場合、接合層からパワー半導体チップに銅が拡散し、素子リーク電流の増大、素子耐圧の劣化、素子の特性が変動してしまう課題があった。
また、本発明の半導体装置の製造方法は、前記半導体素子が形成された前記半導体基板を用意する工程と、前記半導体基板の表面に前記第1のAl金属層を形成する工程と、前記第1のAl金属層の表面に、前記Al金属層の導電性を確保しつつ、前記銅焼結層のCu拡散を防止するCu拡散防止層を形成する工程と、前記Cu拡散防止層の表面に、前記第1のAl金属層と同一材料からなる前記第2のAl金属層)を形成する工程と、前記第2のAl金属層上に前記金属層を形成する工程と、前記半導体基板をチップ化することで、前記第1の半導体チップの電極構造体を形成する工程と、前記銅焼結層を介して、前記第1の半導体チップの電極構造体を互いに接合する工程と、を有することを特徴とする。
また、本発明の電力変換装置は、前記半導体装置を備えることを特徴とする。
(第1の実施形態)
図1は、本発明の第1の実施形態に係る半導体装置の断面図である。
本実施形態の半導体装置は、パワー半導体チップのフリーホイールダイオードに適用した場合の断面構造を示す。なお、n型Si基板を用いたダイオードをもとに説明するが、これに限定されるものではない。p型Si基板を用いた場合においても同様に、取り扱うことができる。また、縦方向に電流を流すIGBTの電極構造においても、同様に取り扱うことができる。
特に、第2のAl金属層106の表面106aのAl結晶粒の結晶面方位が主に(110)面となっている。
なお、第1の半導体チップは、半導体基板108と、第1の半導体チップの電極構造体151と、を含んで構成されている。
半導体基板108の第2表面108e側のアノード電極109は、AlもしくはAl合金からなる電極構造を有し、一部は、半導体基板108のp型半導体層108aと接しており、他の一部は、絶縁酸化膜110と接している。また、絶縁酸化膜110上には、パッシベーション膜111が形成されている。パッシベーション膜111は、例えばポリイミドで構成されている。
[半導体装置100の製造方法]
図2および図3は、半導体装置100の製造方法の各工程を示す図である。
<ダイオード(半導体素子150)作製工程>
図2(a)は、本実施形態におけるアノードP型半導体領域形成後の断面図である。
まず、ダイオードを作製するためのSiウエハ90を準備する。Siウエハには、耐圧に応じた比抵抗を有するウエハを用いることができる。例えば、1200Vの耐圧をもつダイオードでは55Ωcm程度、3.3kVの耐圧をもつダイオードでは250Ωcm程度とすることができる。このとき、Siウエハ90は、比抵抗が高くn−層の役割を果たす。以降、p型半導体層108aが形成されたSiウエハ90を、n−ドリフト層108bと呼ぶ。
次に、Si基板に熱酸化による酸化膜形成、および化学気相成長(CVD:Chemical Vapor Deposition)法により、絶縁酸化膜110を堆積し、p型半導体層108aとアノード電極109(図2(c)参照)を接続するコンタクト部を形成するためのフォトリソグラフィ工程を行う。レジスト材料を塗布、露光、現像して、形成されたレジストをマスクに、絶縁酸化膜110をエッチングすることにより、図2(b)に示すように、p型半導体層108aとアノード電極を接続するコンタクト部が形成される。続いて、AlもしくはAl合金からなるアノード電極109をスパッタリング法により成膜し、フォトリソグラフィ工程によりレジストをパターニングし、エッチングすることにより、図2(c)に示すように、アノード電極109が形成される。
<裏面カソード側製造工程>
図3(a)は、本実施形態における表面保護膜形成後の断面図である。
まず、n−ドリフト層108bの裏面を研削し、ウエハ厚を薄くする。ウエハ厚は、耐圧に応じて異なり、例えば、1200V耐圧品では120μm程度、3300V耐圧品では400μm程度である。
その後、n−ドリフト層108bの裏面側からウエハ全面に、n型不純物のイオン注入を行う。n型不純物は、例えばリン、ヒ素等が挙げられる。
続いて、イオン注入したn型不純物を活性化させるためにレーザアニールを行い、図3(a)に示すn+型半導体層108cが形成される
次に、裏面のカソード電極112の製造方法について説明する。
図3(b)は、本実施形態におけるn+型半導体層108c形成後の断面図である。
図3(c)に示すように、スパッタリングにより裏面電極の第1のAl金属層105を例えばAlSi合金が0.6μm、Cu拡散防止層107を例えばTiが0.2μm、第2のAl金属層106を例えばAlSi合金が2μmを順に成膜する。このとき、第2のAl金属層106は、Al結晶粒の結晶面方位が、主に(110)面、AlSiの平均結晶粒の大きさが、0.5μm以上となる条件でスパッタリングを行うことにより、図3(c)に示すように、第1のAl金属層105、Cu拡散防止層107および第2のAl金属層106が形成される。AlSiの平均結晶粒の大きさが0.5μm以上であることついては後記する。
Al金属層105、Cu拡散防止層107および第2のAl金属層106スパッタリングは、低温スパッタリング条件で平均結晶粒をウエハ面内で均一にすることが可能であり、好ましくは200℃以下の成膜条件がよい。
図3(c)は、本実施形態における第2のAl金属層106形成後の断面図である。
図1に示すように、Ni層104を無電解メッキ法により形成する。
ここで、無電解メッキ時のジンケート処理は、第2のAl金属層106をエッチングする必要がある。本発明者らは、電解メッキ時のジンケート処理に関して、AlSiの平均結晶粒の大きさが0.5μm以上であることが好ましい知見を得た。
図4に示すように、第2のAl金属層106は、主に(110)面において、AlSiの平均結晶粒の大きさが、0.5μm以上になると、ピンホール発生が大幅に減少する。AlSiの平均結晶粒の大きさが、0.5μm以上となる条件でスパッタリングを行うことにより、無電解メッキ時のジンケート処理によるAlSi電極の局所的な削れが抑制され、均一なNi膜の成長が促進され、Ni電極膜のピンホール欠損が低減できる。因みに、1.5μm以上になると削れ量がほぼ一定になる。
また、裏面のカソード電極112内にTiからなるCu拡散防止層107を設けることで、銅焼結層103からなる接合層を用いて、電気的に接続端子に接続した場合に、この接合層から第1の半導体チップに銅が拡散することを防止し、長期接合信頼性が向上される。
次に、これまで説明した工程で形成されたウエハをダイシングによってチップ化する。
チップ化した後、導電部材102(例えばCu)で配線層が形成されたセラミックス絶縁基板101と、酸化第二銅(CuO)粒子を用いた接合剤を用意し、還元雰囲気下、多段階加熱と加圧を加えて導電部材102とチップ裏面のカソード電極112を接合し、図1に示す銅焼結層103で接合された半導体装置100が形成される。
以上の工程によって、図1に示した半導体装置100が得られる。
また、従来技術ではAl表面の結晶方位が主に(111)面となる安定した成膜は困難である。これに対して、本実施形態では、第2のAl金属層106の表面106aでのAl結晶粒の結晶面方位が主に(110)面となっている。結晶面方位が主に(110)面を用いることができるので、安定した成膜を容易に作製することができる。
図5は、本発明の第2の実施形態に係る半導体装置200の断面図である。図1と同一構成部分には同一符号を付して重複箇所の説明を省略する。本実施形態の半導体装置200は、パワー半導体チップのフリーホイールダイオードに適用した場合の例である。本実施形態の半導体装置200は、縦方向に電流を流すIGBTの電極構造においても、同様に取り扱うことができる。
なお、第2の半導体チップは、半導体基板108と、第2の半導体チップの電極構造体152と、を含んで構成されている。
半導体基板108の第2表面108e上の第1のAl金属層105、Cu拡散防止層107、第2のAl金属層106、およびNi層104は、この順に形成されて、半導体基板108の表面側のカソード電極113を構成する。Ni層104は、銅焼結層103を用いて導電部材102に接合されている。
本実施形態の半導体装置200をパワー半導体モジュールに適用した場合、半導体基板108の両面に同様な電極構成体を設け、ウエハ表裏対象性のよい電極膜を形成しているので、高温環境で顕著になる各部材の熱膨張差に起因する熱応力を小さくすることができる。理想的には銅焼結層103の熱膨張係数を導電部材102のそれに一致させることで、銅焼結層103に生じる熱応力が最小になり、長期信頼性が向上する。
図6および図7は、本発明の第3の実施形態に係る半導体装置300の構成図であり、図6は半導体LSIチップ201の上面図、図7は半導体LSIチップ201を実装した場合における図6のA−A断面図である。図1と同一構成部分には同一符号を付して重複箇所の説明を省略する。
図6に示すように、半導体装置300は、半導体LSIチップ201上に、トランジスタ、ダイオード、抵抗素子等複数の半導体素子が形成され、それらを制御する入出力電極PAD202が配置されている。
半導体LSIチップ201は、半導体基板208上に、トランジスタ、ダイオード、抵抗素子等の複数の半導体素子(図示省略)が形成されている。各半導体素子の電極等の配線は、絶縁酸化膜110内に形成された多層配線203を介して電気的に入出力電極PAD202に接続される。半導体LSIチップ201の各半導体素子は、多層配線203および入出力電極PAD202を通して導電部材102に接続される。
図8および図9は、本発明の第4の実施形態に係る半導体装置400の構成図であり、図8は半導体LSIチップ205,206の上面図、図9は半導体LSIチップ205,206を実装した場合における図8のB−B断面図である。図6および図7と同一構成部分には同一符号を付して重複箇所の説明を省略する。
図8に示すように、半導体装置400は、第1の半導体LSIチップ205と第2の半導体LSIチップ206とを積層構造にした構成を採る。
図9に示すように、半導体装置300は、第1の半導体LSIチップ205と、第2の半導体LSIチップ206と、半導体LSIチップ205の複数電極と多層配線203を介して接続された複数の入出力電極PAD202と、第1の半導体LSIチップ205と第2の半導体LSIチップ206とを電気的に接続するチップ間接続電極PAD207と、を備える。
第1の半導体LSIチップ205と第2の半導体LSIチップ206を電気的に接続するチップ間接続電極PAD207が配置され、第1の半導体LSIチップ205および第2の半導体LSIチップ206の半導体LSIチップを制御する入出力電極PAD202が配置されている。
また、本実施形態では、複数の半導体チップを積層することが可能であり、パッケージの小型化が可能である。
本発明の半導体装置を電力変換装置に適用した第3の実施形態について説明する。
図10は、第1の実施形態に係る半導体装置100を採用した電力変換装置500を示す回路図である。図10は、本実施形態の電力変換装置500の回路構成の一例と直流電源と三相交流モータ(交流負荷)との接続の関係を示す。
本実施形態の電力変換装置500では、第1の実施形態の半導体装置100を電力スイッチング素子501〜506として用いている。電力スイッチング素子501〜506は、例えばIGBTである。
また、一対の電力スイッチング素子501および502の直列接続からなり、その直列接続点に接続されるU端子533を出力とするスイッチングレッグを備える。また、それと同じ構成の電力スイッチング素子503および504の直列接続からなり、その直列接続点に接続されるV端子534を出力とするスイッチングレッグを備える。また、それと同じ構成の電力スイッチング素子505および506の直列接続からなり、その直列接続点に接続されるW端子535を出力とするスイッチングレッグを備える。
電力スイッチング素子501〜506は、例えばIGBTである。
電力スイッチング素子501〜506には、それぞれ逆並列にダイオード521〜526が接続されている。IGBTからなる電力スイッチング素子501〜506のそれぞれのゲートの入力端子には、ゲート回路511〜516によって制御される。なお、ゲート回路511〜516は統括制御回路(不図示)によって統括的に制御されている。
ゲート回路511〜516によって、それぞれ電力スイッチング素子501〜506を統括的に適切に制御して、直流電源Vccの直流電力は、三相交流電力に変換され、U端子533、V端子534、W端子535から出力される。
本発明は、電子部品中の電気的接合部(例えば、半導体素子と回路部材との接合部)の接合層に関し、特に、酸化銅粒子を主材とする接合材を用いて接合した接合層を有する半導体装置に適用して好適である。
以上、各実施形態について図面を参照して詳述したが、本発明はこれら実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲の工程、製造、設計変更等があってもよく、以下にその例を挙げる。
例えば、半導体素子の第1導電型をn型とし、第2導電型をp型とする構成のほか、第1導電型をp型とし、第2導電型をn型としても同様に成り立つ。
91 アノードP型半導体層
92 カソードn+層
100,200,300,400 半導体装置
101 セラミック基板
102 導電部材
103 銅焼結層
104 Ni層(金属層)
104a Ni層の表面
105 第1のAl金属層
106 第2のAl金属層
106a 第2のAl金属層の表面
107 Cu拡散防止層
108 半導体基板
108a p型半導体層
108b n−ドリフト層
108c n+型半導体層
108d 半導体基板の第1表面
108e 半導体基板の第2表面
109アノード電極
110絶縁酸化膜
111 パッシベーション膜
112 カソード電極
113,119,403 絶縁膜
150 半導体素子
151 第1の半導体チップの電極構造体
152 第2の半導体チップの電極構造体
201 半導体LSIチップ
202 入出力電極PAD
203 多層配線
204 基板
205 第1の半導体LSIチップ
206 第2の半導体LSIチップ
207 チップ間接続電極PAD
500 電力変換装置
501〜506 電力スイッチング素子
521〜526 ダイオード
511〜516 ゲート回路
Claims (6)
- 半導体素子が形成された半導体基板の第1表面に、
前記半導体素子と電気的に接続され、AlもしくはAl合金からなる第1のAl金属層、Cu拡散防止層、AlもしくはAl合金からなる第2のAl金属層、および金属層がこの順に形成されている第1の半導体チップの電極構造体と、
前記第1の半導体チップの電極構造体における前記金属層の表面に配置され、銅焼結層を介して前記第1の半導体チップの電極構造体と接合された導電部材と、を備え、
前記第2のAl金属層は、
表面のAl結晶粒の結晶面方位が主に(110)面、かつ、平均結晶粒の大きさが、0.5μm以上となるように形成されている
ことを特徴とする半導体装置。 - 前記半導体基板の第2表面に、
AlもしくはAl合金からなる第1のAl金属層、Cu拡散防止層、AlもしくはAl合金からなる第2のAl金属層、および金属層がこの順に形成されている第2の半導体チップの電極構造体と、
第2の半導体チップの電極構造体における前記金属層の表面に配置され、銅焼結層を介して前記第2の半導体チップの電極構造体と接合された導電部材と、をさらに備え、
前記第2のAl金属層は、
表面のAl結晶粒の結晶面方位が主に(110)面、かつ、平均結晶粒の大きさが、0.5μm以上となるように形成されている
ことを特徴とする請求項1に記載の半導体装置。 - 半導体基板に形成された複数の素子と当該素子に電気的に接続する接続電極パッドを備え、
前記接続電極パッドは、
前記素子が形成された半導体基板の表面に、
前記素子と電気的に接続され、AlもしくはAl合金からなる第1のAl金属層、Cu拡散防止層、AlもしくはAl合金からなる第2のAl金属層、および金属層がこの順に形成されている第1の半導体チップの電極構造体と、
前記金属層の表面に配置され、銅焼結層を介して前記第1の半導体チップの電極構造体と接合された導電部材と、を備え、
前記第2のAl金属層は、
表面のAl結晶粒の結晶面方位が主に(110)面、かつ、平均結晶粒の大きさが、0.5μm以上となるように形成されている
ことを特徴とする半導体装置。 - 請求項1において、
前記半導体素子が形成された前記半導体基板を用意する工程と、
前記半導体基板の表面に前記第1のAl金属層を形成する工程と、
前記第1のAl金属層の表面に、前記第1のAl金属層の導電性を確保しつつ、前記銅焼結層のCu拡散を防止するCu拡散防止層を形成する工程と、
前記Cu拡散防止層の表面に、前記第1のAl金属層と同一材料からなる前記第2のAl金属層を形成する工程と、
前記第2のAl金属層上に前記金属層を形成する工程と、
前記半導体基板をチップ化することで、前記第1の半導体チップの電極構造体を形成する工程と、
前記銅焼結層を介して、前記第1の半導体チップの電極構造体を互いに接合する工程と、
を有し、
前記第2のAl金属層を形成する工程では、前記第2のAl金属層の平均結晶粒の大きさが、0.5μm以上となる条件でスパッタリングを用いて形成されていることを特徴とする半導体装置の製造方法。 - 前記スパッタリングは、低温スパッタリング条件、かつ、200℃以下の成膜条件である
ことを特徴とする請求項4に記載の半導体方法。 - 一対の直流端子と、交流の相数と同数の交流端子と、前記一対の直流端子間に接続された、それぞれのスイッチング素子と逆極性のダイオードの並列回路を2個直列に接続した構成からなり、前記並列回路の相互接続点が異なる交流端子に接続された交流の相数と同数の電力変換単位とを備え、前記スイッチング素子が請求項1乃至請求項3のいずれか一項に記載の半導体装置であることを特徴とする電力変換装置。
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