JP2009111187A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2009111187A JP2009111187A JP2007282385A JP2007282385A JP2009111187A JP 2009111187 A JP2009111187 A JP 2009111187A JP 2007282385 A JP2007282385 A JP 2007282385A JP 2007282385 A JP2007282385 A JP 2007282385A JP 2009111187 A JP2009111187 A JP 2009111187A
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Abstract
【解決手段】主面側と裏面側の両方にメッキ電極層M1,M2aを有する同一構造の半導体装置100が、一枚の半導体ウェハに複数個形成され、これらが個々のチップに切り出されてなる半導体装置100であって、主面側と裏面側のいずれのメッキ電極層M1,M2aも半導体ウェハの切り出し線CLに掛からないようにして配置され、切り出し線CLに沿って各チップに切り出されてなる半導体装置100とする。
【選択図】図3
Description
10 シリコン基板
18 (主面側の)下地金属層
31,31a (裏面側の)下地金属層
24 (主面側の)絶縁保護膜
34 (裏面側の)絶縁保護膜
M1,M1a,M1b (主面側の)メッキ電極層
M2,M2a〜M2d (裏面側の)メッキ電極層
L1 (主面側)リードフレーム
L2 (裏面側)リードフレーム
14 トレンチゲート
CL 切り出し線(カットライン)
Claims (13)
- 主面側と裏面側の両方にメッキ電極層を有する同一構造の半導体装置が、一枚の半導体ウェハに複数個形成され、これらが個々のチップに切り出されてなる半導体装置であって、
前記半導体装置における主面側と裏面側のいずれのメッキ電極層も、前記半導体ウェハの切り出し線に掛からないようにして、該半導体装置が該半導体ウェハに配置され、
該半導体装置が、前記切り出し線に沿ってチップに切り出されてなることを特徴とする半導体装置。 - 前記半導体装置における主面側および裏面側の少なくとも一方のメッキ電極層が、絶縁保護膜に取り囲まれてなることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁保護膜が、前記切り出し線に掛からないようにして、該半導体装置が該半導体ウェハに配置されてなることを特徴とする請求項2に記載の半導体装置。
- 前記半導体装置における主面側および裏面側の少なくとも一方のメッキ電極層の下地金属層が、前記切り出し線に掛からないようにして、該半導体装置が該半導体ウェハに配置されてなることを特徴とする請求項1に記載の半導体装置。
- 前記下地金属層が、アルミニウム(Al)またはアルミニウム(Al)合金からなることを特徴とする請求項4に記載の半導体装置。
- 前記メッキ電極層が、ニッケル(Ni)またはニッケル(Ni)/金(Au)積層体からなることを特徴とする請求項1乃至5のいずれか一項に記載の半導体装置。
- 前記メッキ電極層が、無電解メッキにより形成されてなることを特徴とする請求項1乃至6のいずれか一項に記載の半導体装置。
- 前記半導体装置における主面側と裏面側のメッキ電極層に、それぞれ、主面側リードフレームと裏面側リードフレームがはんだ接続されてなることを特徴とする請求項1乃至7のいずれか一項に記載の半導体装置。
- 前記主面側のメッキ電極層と前記主面側リードフレームのはんだ接続部の最大幅が、前記裏面側のメッキ電極層と前記裏面側リードフレームのはんだ接続部の最大幅と同じ値に設定されてなることを特徴とする請求項8に記載の半導体装置。
- 前記主面側のメッキ電極層と前記主面側リードフレームのはんだ接続部と、前記裏面側のメッキ電極層と前記裏面側リードフレームのはんだ接続部とが、同一形状に設定されてなることを特徴とする請求項9に記載の半導体装置。
- 前記半導体装置において、主面側にトレンチゲートが配置されてなり、
前記主面側のメッキ電極層と前記主面側リードフレームのはんだ接続部の最大幅が、前記裏面側のメッキ電極層と前記裏面側リードフレームのはんだ接続部の最大幅より大きく設定されてなることを特徴とする請求項8に記載の半導体装置。 - 前記半導体装置は、IGBT素子が形成されてなる半導体装置であることを特徴とする請求項1乃至11のいずれか一項に記載の半導体装置。
- 前記半導体装置が、車載用であることを特徴とする請求項1乃至12のいずれか一項に記載の半導体装置。
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JP2011086852A (ja) * | 2009-10-19 | 2011-04-28 | Toyota Motor Corp | 半導体装置 |
JP2013080835A (ja) * | 2011-10-04 | 2013-05-02 | Denso Corp | 半導体装置およびその製造方法 |
JP2014107489A (ja) * | 2012-11-29 | 2014-06-09 | Toyota Motor Corp | 半導体装置 |
JP2014187204A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | 半導体装置の製造方法および半導体装置 |
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JP2015128082A (ja) * | 2013-12-27 | 2015-07-09 | マツダ株式会社 | 半導体装置 |
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