JP2014107489A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2014107489A
JP2014107489A JP2012261126A JP2012261126A JP2014107489A JP 2014107489 A JP2014107489 A JP 2014107489A JP 2012261126 A JP2012261126 A JP 2012261126A JP 2012261126 A JP2012261126 A JP 2012261126A JP 2014107489 A JP2014107489 A JP 2014107489A
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Prior art keywords
layer
strength
electrode layer
low
semiconductor device
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JP5686128B2 (ja
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Toru Tanaka
徹 田中
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Toyota Motor Corp
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Toyota Motor Corp
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Priority to US14/073,059 priority patent/US9153525B2/en
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Abstract

【課題】電極層の破損を抑制することができる半導体装置を開示する。
【解決手段】半導体装置１０は、半導体素子２０と、低強度層４０と、接合層５０と、導電板６０を備える。半導体素子２０は、半導体基板２２と、半導体基板２２の表裏面のそれぞれに設けられた電極層３０を有している。低強度層４０は、電極層３０の表面に設けられている。接合層５０は、低強度層４０の表面に設けられている。導電板６０は、接合層５０の表面に設けられている。接合層５０の強度は、電極層３０の強度よりも高く、低強度層４０の強度は、電極層３０の強度よりも低い。
【選択図】図１

Description

本明細書で開示する技術は、半導体装置に関する。
例えば、特許文献１には、半導体素子の表面に設けられた電極層に、はんだ層を介して導電板を固定した半導体装置が開示されている。
特開２０１１−１２９６１９号公報
高温で駆動する半導体素子にはんだ層を介して導電板を固定する場合、はんだ層に高融点のはんだ材を使用する場合がある。しかし、一般的に、高融点のはんだ材は電極層よりも強度が高い。そのため、半導体素子の発熱と放熱に伴って、電極層とはんだ層に熱応力が繰り返し作用すると、はんだ層よりも先に電極層が破損する場合がある。
本明細書では、電極層の破損を抑制することができる半導体装置を開示する。
本明細書で開示する半導体装置は、その表面に電極層を備える半導体素子と、電極層の表面に備えられた低強度層と、低強度層の表面に備えられた接合層と、接合層の表面に備えられた導電板と、を有している。接合層の強度は、電極層の強度よりも高く、低強度層の強度は、電極層の強度よりも低い。
上記の半導体装置では、接合層の強度は、電極層の強度よりも高く、低強度層の強度は、電極層の強度よりも低い。そのため、半導体素子の発熱と放熱に伴って、電極層及び接合層に熱応力が繰り返し作用すると、電極層より先に、低強度層が破損し易い。従って、電極層の破損を抑制することができる。
ここで、「強度」とは、各層に作用する応力に対する強さを意味する。例えば、強度は、降伏強度（降伏応力）の大きさによって定義することができる。降伏強度が大きいほど、強度が高いと言うことができる。また、降伏強度を定めることができない材料（明確な降伏点を示さない材料）の場合は、０．２％耐力を降伏強度の代替としてもよいことも知られている。本明細書では、０．２％耐力のことを「強度」の一例として説明する場合がある。０．２％耐力の大きさは、例えば、ＪＩＳ（日本工業規格）に定められた試験方法（引張試験）によって測定することができる。
また、例えば、「強度」は、疲労強度の大きさによって定義することもできる。疲労強度が大きいほど、強度が高いと言うことができる。本明細書では、疲労強度のことを「強度」の一例として説明する場合がある。疲労強度の大きさは、例えば、ＪＩＳに定められた試験方法（疲れ試験）によって測定することができる。
実施例の半導体装置の要部を示す断面図。
以下に説明する実施例の主要な特徴を列記しておく。なお、以下に記載する技術要素は、それぞれ独立した技術要素であって、単独であるいは各種の組合せによって技術的有用性を発揮するものであり、出願時請求項記載の組合せに限定されるものではない。
（特徴１）電極層がＡｌＳｉによって形成されており、低強度層がＡｌによって形成されていてもよい。
図１に示す半導体装置１０は、半導体素子２０と、低強度層４０と、接合層５０と、導電板６０を備える。本実施例の半導体装置１０では、半導体素子２０の表裏面に、低強度層４０及び接合層５０を介して導電板６０が固定されている。以下、本実施例では、半導体素子２０、低強度層４０、接合層５０、及び、導電板６０について、図中の上側の面を「表面」、下側の面を「裏面」と呼ぶ場合がある。
半導体素子２０は、半導体基板２２と、半導体基板２２の表裏面にそれぞれ設けられた電極層３０を有している。半導体基板２２は、例えば、Ｓｉによって形成されている。電極層３０は、ＡｌＳｉによって形成されている。本実施例では、半導体素子２０は、縦型のＩＧＢＴ（Insulated Gate Bipolar Transistor）である。他の例では、半導体素子２０は、他の電力用半導体素子（整流ダイオード、パワーＭＯＳＦＥＴ等）であってもよい。本実施例では、半導体素子２０は高温で駆動される。
低強度層４０は、半導体素子２０の表裏面にそれぞれ設けられている。即ち、低強度層４０は、図中上側の電極層３０の表面と、図中下側の電極層３０の裏面にそれぞれ設けられている。本実施例では、低強度層４０は、Ａｌによって形成されている。低強度層４０は、半導体素子２０の表裏面上にＡｌをスパッタすることによって形成される。Ａｌで形成されている低強度層４０の強度は、ＡｌＳｉで形成されている電極層３０の強度に比べて低い。以下、本実施例では、「強度」の基準として、０．２％耐力を採用する場合を例として説明する。即ち、本実施例では、低強度層４０の０．２％耐力は、電極層３０の０．２％耐力に比べて低い。
接合層５０は、図中上側の低強度層４０の表面と、図中下側の低強度層４０の裏面にそれぞれ設けられている。接合層５０は、Ｓｎ−Ｓｂ系はんだによって形成されている。そのため、接合層５０の０．２％耐力は、ＡｌＳｉで形成されている電極層３０の０．２％耐力に比べて高い。なお、他の例では、接合層５０は、Ｚｎ−Ａｌ系はんだ層、Ｎｉナノ粒子焼結体層、Ａｇナノ粒子焼結体層、ＳｎＣｕ又はＳｕＮｉをインサート材として利用するＴＬＰ接合（液相拡散接合）層等、電極層３０に比べて０．２％耐力が高く、比較的高融点を有する層であれば任意の層とすることができる。本実施例では、接合層５０の融点は、半導体素子２０の駆動時の温度よりも高い。
導電板６０は、図中上側の接合層５０の表面と、図中下側の接合層５０の裏面にそれぞれ設けられている。導電板６０は、Ｃｕで形成されたリードフレームである。導電板６０は、半導体素子２０が発生する熱を放熱する放熱板としての機能も果たす。導電板６０は、接合層５０を介して、低強度層４０に固定されている。
上記の通り、本実施例では、接合層５０の０．２％耐力は、電極層３０の０．２％耐力よりも高く、低強度層４０の０．２％耐力は、電極層３０の０．２％耐力よりも低い。そのため、半導体素子２０の発熱と放熱に伴って、電極層３０及び接合層５０に熱応力が繰り返し作用しても、電極層３０より先に、低強度層４０が破損する。従って、電極層３０の破損を抑制することができる。
（実験例）
続いて、本発明者が、本実施例の半導体装置１０の作用効果を確認するために、半導体装置１０について行った実験について説明する。この例では、以下の実施例１〜６に示すように、様々な接合層５０を有する半導体装置１０を準備し、それぞれについて、２００℃〜−４０℃の冷熱サイクルを３０００サイクル繰り返し、破損箇所を検証した。また、比較のため、以下の比較例１〜６に示すように、様々な接合層５０を有するとともに、低強度層４０を省略した半導体装置を準備し、それぞれについて、同じ実験を行った。
実施例１〜６は、図１に示す半導体装置１０である。実施例１〜６の接合層５０は、以下の通りとした。また、電極層３０はＡｌＳｉによって形成し、低強度層４０はＡｌによって形成した。このため、実施例１〜６の接合層５０の０．２％耐力は、いずれも、電極層３０の０．２％耐力よりも高く、低強度層４０の０．２％体力より低くなった。
（実施例１）Ｓｎ１３〜６ＳｂＣｕ（Ｓｎ−Ｓｂ系はんだ）による層
（実施例２）Ｚｎ６〜４Ａｌ（Ｚｎ−Ａｌ系はんだ）による層
（実施例３）Ｎｉナノ粒子焼結体による層
（実施例４）Ａｇナノ粒子焼結体による層
（実施例５）ＴＬＰ接合層（ＳｎＣｕをインサート材として利用）
（実施例６）ＴＬＰ接合層（ＳｕＮｉをインサート材として利用）
比較例１〜６は、図１に示す半導体装置１０から低強度層４０を省略した半導体装置である。即ち、比較例１〜６では、導電板６０は、接合層５０を介して、ＡｌＳｉによって形成した電極層３０に直接固定した。比較例１〜６の接合層５０は、以下の通り、実施例１〜６の接合層５０と同様とした。
（比較例１）Ｓｎ１３〜６ＳｂＣｕ（Ｓｎ−Ｓｂ系はんだ）による層
（比較例２）Ｚｎ６〜４Ａｌ（Ｚｎ−Ａｌ系はんだ）による層
（比較例３）Ｎｉナノ粒子焼結体による層
（比較例４）Ａｇナノ粒子焼結体による層
（比較例５）ＴＬＰ接合層（ＳｎＣｕをインサート材として利用）
（比較例６）ＴＬＰ接合層（ＳｕＮｉをインサート材として利用）
実施例１〜６と比較例１〜６のそれぞれについて、２００℃〜−４０℃の冷熱サイクルを３０００サイクル繰り返したところ、実施例１〜６では、Ａｌで形成された低強度層４０が破損し、比較例１〜６では、ＡｌＳｉで形成された電極層３０が破損した。
上記の実験結果からも明らかなように、本実施例の半導体装置１０では、電極層３０と接合層５０の間に低強度層４０が備えられるとともに、その低強度層４０の０．２％耐力が電極層３０の０．２％耐力よりも低い。このため、電極層３０及び接合層５０に熱応力が繰り返し作用しても、電極層３０より先に、低強度層４０が破損する。従って、電極層３０の破損を抑制することができる。
以上、本実施例の半導体装置１０について説明した。本実施例と請求項の記載との対応関係を説明しておく。本実施例の半導体素子２０の表裏面はいずれも「（半導体素子の）表面」の一例である。図中上側の電極層３０の表面と図中下側の電極層３０の裏面は、いずれも「電極層の表面」の一例である。図中上側の低強度層４０の表面と図中下側の低強度層４０の裏面は、いずれも「低強度層の表面」の一例である。図中上側の接合層５０の表面と図中下側の接合層５０の裏面は、いずれも「接合層の表面」の一例である。
以上、本明細書に開示の技術の具体例を詳細に説明したが、これらは例示に過ぎず、特許請求の範囲を限定するものではない。特許請求の範囲に記載の技術には、以上に例示した具体例を様々に変形、変更したものが含まれる。例えば、以下の変形例を採用してもよい。
（変形例１）上記の実施例では、電極層３０、低強度層４０、接合層５０の強度を表す基準として０．２％耐力を採用している。これには限られず、電極層３０、低強度層４０、接合層５０の強度を表す基準は、各層に作用する応力に対する強さ（破壊強度）を表す基準であれば、他の任意の基準を採用してもよい。例えば、強度の基準として疲労強度を採用してもよい。この場合、接合層５０の疲労強度が、電極層３０の疲労強度よりも高く、低強度層４０の疲労強度が、電極層３０の疲労強度よりも低ければよい。
（変形例２）半導体装置１０の周囲を樹脂によって封止してもよい。その場合の封止用樹脂材としては、エポキシ樹脂、ポリイミド樹脂、ポリアミド樹脂等を用いることができる。
（変形例３）上記の実施例では、半導体素子２０の表裏両面に、低強度層４０、接合層５０、及び、導電板６０が備えられている。これには限られず、半導体素子２０の表裏面のうち、片面側にのみ低強度層４０、接合層５０、及び、導電板６０が備えられていてもよい。
また、本明細書または図面に説明した技術要素は、単独であるいは各種の組合せによって技術的有用性を発揮するものであり、出願時請求項記載の組合せに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
１０：半導体装置
２０：半導体素子
２２：半導体基板
３０：電極層
４０：低強度層
５０：接合層
６０：導電板

Claims (2)

  1. 半導体装置であって、
    その表面に電極層を備える半導体素子と、
    電極層の表面に備えられた低強度層と、
    低強度層の表面に備えられた接合層と、
    接合層の表面に備えられた導電板と、を有しており、
    接合層の強度は、電極層の強度よりも高く、
    低強度層の強度は、電極層の強度よりも低い、
    ことを特徴とする半導体装置。
  2. 電極層がＡｌＳｉによって形成されており、
    低強度層がＡｌによって形成されている、
    ことを特徴とする請求項１に記載の半導体装置。
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JP2016219479A (ja) * 2015-05-15 2016-12-22 トヨタ自動車株式会社 半導体装置の製造方法及び半導体装置
JP2017011129A (ja) * 2015-06-23 2017-01-12 三菱電機株式会社 半導体装置
US10347725B2 (en) 2015-06-23 2019-07-09 Mitsubishi Electric Corporation Semiconductor device that facilitates a reduction in the occurrences of cracking in a semiconductor layer accompanying thermal stress
JP2017168792A (ja) * 2016-03-18 2017-09-21 富士電機株式会社 電力用半導体モジュール

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