JP5720287B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5720287B2 JP5720287B2 JP2011029122A JP2011029122A JP5720287B2 JP 5720287 B2 JP5720287 B2 JP 5720287B2 JP 2011029122 A JP2011029122 A JP 2011029122A JP 2011029122 A JP2011029122 A JP 2011029122A JP 5720287 B2 JP5720287 B2 JP 5720287B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor device
- film
- thickness
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 80
- 230000002093 peripheral effect Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 68
- 238000004519 manufacturing process Methods 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 17
- 238000010586 diagram Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 10
- 239000010931 gold Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- -1 Al—Si alloy Chemical class 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
前記第2電極の外周部領域の厚さは4.5μm以上であり、該外周部領域以外の領域の厚さは0.7μm〜1.4μmの厚さであることを特徴とする。
20 Al電極
30 絶縁膜
40 チッ化膜
50 裏面電極
60 上部電極
61 Ti膜
62 Ni膜
63 Au膜
64、65、66 Ni電極
64a、65a、66a 外周領域
64b、65b、66b 中央側領域
66c 外側端面
70 はんだ
80 金属部材
Claims (1)
- 半導体基板の素子形成面上に第1の金属からなる第1電極が形成され、該第1電極上に前記第1の金属よりヤング率が大きい第2の金属からなる第2電極が形成された半導体装置において、
前記第2電極の外周部領域の厚さは4.5μm以上であり、該外周部領域以外の領域の厚さは0.7μm〜1.4μmの厚さであることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011029122A JP5720287B2 (ja) | 2011-02-14 | 2011-02-14 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011029122A JP5720287B2 (ja) | 2011-02-14 | 2011-02-14 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012169455A JP2012169455A (ja) | 2012-09-06 |
JP5720287B2 true JP5720287B2 (ja) | 2015-05-20 |
Family
ID=46973334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011029122A Expired - Fee Related JP5720287B2 (ja) | 2011-02-14 | 2011-02-14 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5720287B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6878930B2 (ja) * | 2017-02-08 | 2021-06-02 | 株式会社デンソー | 半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06177134A (ja) * | 1992-12-04 | 1994-06-24 | Sony Corp | 電子部品のバンプ構造 |
JP4058198B2 (ja) * | 1999-07-02 | 2008-03-05 | 富士通株式会社 | 半導体装置の製造方法 |
JP2006041011A (ja) * | 2004-07-23 | 2006-02-09 | Optrex Corp | Icチップおよび表示装置 |
JP4990711B2 (ja) * | 2007-07-27 | 2012-08-01 | ソニーケミカル&インフォメーションデバイス株式会社 | Icチップの製造方法及びicチップの実装方法 |
-
2011
- 2011-02-14 JP JP2011029122A patent/JP5720287B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2012169455A (ja) | 2012-09-06 |
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