JP2012169455A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2012169455A JP2012169455A JP2011029122A JP2011029122A JP2012169455A JP 2012169455 A JP2012169455 A JP 2012169455A JP 2011029122 A JP2011029122 A JP 2011029122A JP 2011029122 A JP2011029122 A JP 2011029122A JP 2012169455 A JP2012169455 A JP 2012169455A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 230000002093 peripheral effect Effects 0.000 claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 68
- 238000004519 manufacturing process Methods 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 17
- 238000010586 diagram Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 10
- 239000010931 gold Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- -1 Al—Si alloy Chemical class 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】半導体基板10の素子形成面上に第1の金属からなる第1電極20が形成され、該第1電極上に前記第1の金属よりヤング率が大きい第2の金属からなる第2電極64が形成された半導体装置において、
前記第2電極の外周部領域64aの厚さAが、該外周部以外の領域64bの厚さBよりも厚いことを特徴とする。
【選択図】図2
Description
前記第2電極の外周部領域の厚さが、該外周部領域以外の領域の厚さよりも厚いことを特徴とする。
20 Al電極
30 絶縁膜
40 チッ化膜
50 裏面電極
60 上部電極
61 Ti膜
62 Ni膜
63 Au膜
64、65、66 Ni電極
64a、65a、66a 外周領域
64b、65b、66b 中央側領域
66c 外側端面
70 はんだ
80 金属部材
Claims (1)
- 半導体基板の素子形成面上に第1の金属からなる第1電極が形成され、該第1電極上に前記第1の金属よりヤング率が大きい第2の金属からなる第2電極が形成された半導体装置において、
前記第2電極の外周部領域の厚さが、該外周部領域以外の領域の厚さよりも厚いことを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011029122A JP5720287B2 (ja) | 2011-02-14 | 2011-02-14 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011029122A JP5720287B2 (ja) | 2011-02-14 | 2011-02-14 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012169455A true JP2012169455A (ja) | 2012-09-06 |
JP5720287B2 JP5720287B2 (ja) | 2015-05-20 |
Family
ID=46973334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011029122A Expired - Fee Related JP5720287B2 (ja) | 2011-02-14 | 2011-02-14 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5720287B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018129390A (ja) * | 2017-02-08 | 2018-08-16 | トヨタ自動車株式会社 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06177134A (ja) * | 1992-12-04 | 1994-06-24 | Sony Corp | 電子部品のバンプ構造 |
JP2001015539A (ja) * | 1999-07-02 | 2001-01-19 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
JP2006041011A (ja) * | 2004-07-23 | 2006-02-09 | Optrex Corp | Icチップおよび表示装置 |
JP2009032949A (ja) * | 2007-07-27 | 2009-02-12 | Sony Chemical & Information Device Corp | Icチップ及びicチップの実装方法 |
-
2011
- 2011-02-14 JP JP2011029122A patent/JP5720287B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06177134A (ja) * | 1992-12-04 | 1994-06-24 | Sony Corp | 電子部品のバンプ構造 |
JP2001015539A (ja) * | 1999-07-02 | 2001-01-19 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
JP2006041011A (ja) * | 2004-07-23 | 2006-02-09 | Optrex Corp | Icチップおよび表示装置 |
JP2009032949A (ja) * | 2007-07-27 | 2009-02-12 | Sony Chemical & Information Device Corp | Icチップ及びicチップの実装方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018129390A (ja) * | 2017-02-08 | 2018-08-16 | トヨタ自動車株式会社 | 半導体装置 |
Also Published As
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JP5720287B2 (ja) | 2015-05-20 |
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