JP6535509B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6535509B2 JP6535509B2 JP2015096271A JP2015096271A JP6535509B2 JP 6535509 B2 JP6535509 B2 JP 6535509B2 JP 2015096271 A JP2015096271 A JP 2015096271A JP 2015096271 A JP2015096271 A JP 2015096271A JP 6535509 B2 JP6535509 B2 JP 6535509B2
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Description
図1〜図11を用いて、本発明の第1実施形態について説明する。
200 半導体素子
201 表面
202 裏面
211 第1表面電極
212 第2表面電極
213 電極層
214 除去領域
216 アクティブ領域
217 MOSFET
218 単位セル
220 裏面電極
231 半導体層
232 共晶層
300 主リード
310 主リード主面
311 主表面めっき層
320 主リード裏面
321 主裏面めっき層
330 主全厚部
340 主ひさし部
341 主前方部
342 主側方部
343 主後方部
351A 第1主側方連結部
351B 第2主側方連結部
352 主後方連結部
380 切欠き
390 端面
391 端面
400 第1副リード
410 第1副リード主面
411 第1副表面めっき層
420 第1副リード裏面
421 第1副裏面めっき層
430 第1副全厚部
440 第1副ひさし部
441 第1副前方部
442 第1副側方部
443 第1副後方部
451 第1副側方連結部
452 第1副後方連結部
500 第2副リード
510 第2副リード主面
511 第2副表面めっき層
520 第2副リード裏面
521 第2副裏面めっき層
530 第2副全厚部
540 第2副ひさし部
541 第2副前方部
542 第2副側方部
543 第2副後方部
551 第2副側方連結部
552 第2副後方連結部
600 第1ワイヤ
610,710 ファーストボンディング部
620,720 セカンドボンディング部
630 第1バンプ
700 第2ワイヤ
730 第2バンプ
800 樹脂パッケージ
L1,L2,L3 離間距離
x,y 方向
z 厚さ方向
Claims (32)
- 半導体素子と、
前記半導体素子が配置された主リードと、
前記半導体素子および前記主リードを覆う樹脂パッケージと、を備え、
前記主リードには、前記半導体素子の厚さ方向視である平面視において前記主リードの中心側に凹む切欠きが形成されており、
前記半導体素子に導通する第1副リードを更に備え、
前記第1副リードは、前記主リードから離間しており、且つ、前記樹脂パッケージから露出しており、
前記主リードは、互いに反対側を向く主リード主面および主リード裏面を有し、
前記主リード主面には、前記半導体素子が配置されており、
前記主リードは、主全厚部および主ひさし部を含み、
前記主全厚部は、前記主リード主面から前記主リード裏面にわたっている部分であり、
前記主ひさし部は、前記半導体素子の厚さ方向に対して直角である方向に、前記主全厚部から突出しており、
前記主リードは、前記主ひさし部から突出する第1主側方連結部を含み、
前記第1主側方連結部の突出する方向は、前記主リードから前記第1副リードに向かう方向に直交する方向であり、
前記第1主側方連結部は、前記樹脂パッケージから露出する端面を有し、
前記主リードは、前記主ひさし部から突出する第2主側方連結部を含み、
前記第2主側方連結部の突出する方向は、前記主リードから前記第1副リードに向かう方向に直交する方向であり、
前記第2主側方連結部は、前記樹脂パッケージから露出する端面を有し、
前記第1主側方連結部および前記第2主側方連結部は、互いに並列されている、半導体装置。 - 前記切欠きは、平面視において、前記第1副リードから前記主リードに向かう方向に凹む形状である、請求項1に記載の半導体装置。
- 前記主リードは、前記主リードにおいて最も前記第1副リード側に位置する端面を有し、
前記切欠きは、平面視において、前記端面から凹む形状である、請求項1または請求項2に記載の半導体装置。 - 前記切欠きは、平面視において、前記主リードのうち前記第1副リードとは反対側の部位から凹む形状である、請求項1に記載の半導体装置。
- 前記主リードは、前記主リードにおいて前記第1副リードとは反対側に位置する端面を有し、
前記切欠きは、平面視において、前記端面から凹む形状である、請求項4に記載の半導体装置。 - 前記半導体素子は、平面視において、前記主全厚部および主ひさし部のいずれにも重なっている、請求項1ないし請求項5のいずれかに記載の半導体装置。
- 前記切欠きは、前記主ひさし部に形成されている、請求項1ないし請求項6のいずれかに記載の半導体装置。
- 前記半導体素子は、前記半導体素子の全体にわたって、平面視において、前記主リードに重なる、請求項1ないし請求項7のいずれかに記載の半導体装置。
- 前記主ひさし部は、主前方部を有し、前記主前方部は、前記主全厚部から前記第1副リードに向かって突出しており、
前記切欠きは、前記主前方部に形成されている、請求項1ないし請求項7のいずれかに記載の半導体装置。 - 前記主ひさし部は、主側方部を有し、前記主側方部は、前記主前方部の突出する方向に対して直角である方向に、前記主全厚部から突出している、請求項9に記載の半導体装置。
- 前記第2主側方連結部は、前記主リードから前記第1副リードに向かう方向において、前記第1主側方連結部と前記第1副リードとの間に位置している、請求項1ないし請求項10に記載の半導体装置。
- 前記第1主側方連結部および前記第2主側方連結部の離間距離は、0.2〜0.3mmである、請求項1ないし請求項11に記載の半導体装置。
- 前記主ひさし部は、主後方部を有し、前記主後方部は、前記主前方部が突出する方向とは反対方向に、前記主全厚部から突出している、請求項9に記載の半導体装置。
- 前記主リードは、前記主後方部から突出する主後方連結部を含み、前記主後方連結部は、前記樹脂パッケージから露出する端面を有する、請求項13に記載の半導体装置。
- 前記主全厚部は、全体にわたって、平面視において、前記主ひさし部に囲まれている、請求項1ないし請求項14のいずれかに記載の半導体装置。
- 前記主リードに形成され、前記半導体素子および前記主リードの間に介在している主表面めっき層を更に備える、請求項1ないし請求項15のいずれかに記載の半導体装置。
- 前記主表面めっき層は、平面視略矩形状である、請求項16に記載の半導体装置。
- 前記切欠きは、平面視において前記主表面めっき層を凹ませた形状である、請求項16または請求項17に記載の半導体装置。
- 前記主表面めっき層は、前記主ひさし部の全体に重なる、請求項16に記載の半導体装置。
- 前記第1副リードは、第1副全厚部および第1副ひさし部を含み、
前記第1副リードは、互いに反対側を向く第1副リード主面および第1副リード裏面を有し、
前記第1副全厚部は、前記第1副リード主面から前記第1副リード裏面にわたる部位であり、
前記第1副ひさし部は、前記半導体素子の厚さ方向に対して直角である方向に、前記第1副全厚部から突出しており、且つ、前記第1副リード主面を構成している、請求項1に記載の半導体装置。 - 前記第1副ひさし部は、第1副前方部を有し、
前記第1副前方部は、前記第1副全厚部から前記主リードに向かって突出している、請求項20に記載の半導体装置。 - 前記第1副リードは、前記第1副ひさし部から突出している第1副側方連結部を含み、
前記第1副側方連結部の突出する方向は、前記主リードから前記第1副リードに向かう方向に直交する方向であり、
前記第1副側方連結部は、前記樹脂パッケージから露出する端面を有する、請求項20に記載の半導体装置。 - 前記第1副側方連結部と前記主リードとの離間距離は、0.2〜0.3mmである、請求項22に記載の半導体装置。
- 前記半導体素子に接合され、前記半導体素子および前記第1副リードを導通させる第1ワイヤを更に備える、請求項1に記載の半導体装置。
- 前記第1副リードおよび前記第1ワイヤの間に介在する第1副表面めっき層を更に備える、請求項24に記載の半導体装置。
- 前記半導体素子に導通する第2副リードを更に備え、
前記第2副リードは、前記主リードから離間しており、且つ、前記樹脂パッケージから露出している、請求項1に記載の半導体装置。 - 前記半導体素子に接合され、前記半導体素子および前記第2副リードを導通させる第2ワイヤを更に備える、請求項26に記載の半導体装置。
- 前記第2副リードおよび前記第2ワイヤの間に介在する第2副表面めっき層を更に備える、請求項27に記載の半導体装置。
- 前記半導体素子は、互いに積層された半導体層、半導体と金属との共晶層および裏面電極を構成する金属単体層を有しており、前記金属単体層が前記主リードに直接接合されている、請求項1ないし請求項28のいずれかに記載の半導体装置。
- 前記共晶層は、SiとAuとの共晶からなる、請求項29に記載の半導体装置。
- 前記金属単体層は、前記共晶層よりも薄い、請求項29または請求項30に記載の半導体装置。
- 半導体素子と、
前記半導体素子が配置された主リードと、
前記半導体素子および前記主リードを覆う樹脂パッケージと、を備え、
前記主リードには、前記半導体素子の厚さ方向視である平面視において前記主リードの中心側に凹む切欠きが形成されており、
前記半導体素子に導通する第1副リードを更に備え、
前記第1副リードは、前記主リードから離間しており、且つ、前記樹脂パッケージから露出しており、
前記主リードは、互いに反対側を向く主リード主面および主リード裏面を有し、
前記主リード主面には、前記半導体素子が配置されており、
前記主リードは、主全厚部および主ひさし部を含み、
前記主全厚部は、前記主リード主面から前記主リード裏面にわたっている部分であり、
前記主ひさし部は、前記半導体素子の厚さ方向に対して直角である方向に、前記主全厚部から突出しており、
前記主ひさし部は、主前方部を有し、前記主前方部は、前記主全厚部から前記第1副リードに向かって突出しており、
前記切欠きは、前記主前方部に形成されており、
前記主ひさし部は、主後方部を有し、前記主後方部は、前記主前方部が突出する方向とは反対方向に、前記主全厚部から突出しており、
前記主リードは、前記主後方部から突出する主後方連結部を含み、前記主後方連結部は、前記樹脂パッケージから露出する端面を有する、半導体装置。
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US10522674B2 (en) | 2016-05-18 | 2019-12-31 | Rohm Co., Ltd. | Semiconductor with unified transistor structure and voltage regulator diode |
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US11152326B2 (en) | 2018-10-30 | 2021-10-19 | Stmicroelectronics, Inc. | Semiconductor die with multiple contact pads electrically coupled to a lead of a lead frame |
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US7557432B2 (en) * | 2005-03-30 | 2009-07-07 | Stats Chippac Ltd. | Thermally enhanced power semiconductor package system |
US7635915B2 (en) * | 2006-04-26 | 2009-12-22 | Cree Hong Kong Limited | Apparatus and method for use in mounting electronic elements |
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US8680659B2 (en) * | 2009-05-15 | 2014-03-25 | Rohm Co., Ltd. | Semiconductor device |
JP2011176364A (ja) * | 2010-01-29 | 2011-09-08 | Toshiba Corp | Ledパッケージ |
CN105845816A (zh) * | 2010-11-02 | 2016-08-10 | 大日本印刷株式会社 | 附有树脂引线框及半导体装置 |
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