JP5032623B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
- Publication number
- JP5032623B2 JP5032623B2 JP2010072921A JP2010072921A JP5032623B2 JP 5032623 B2 JP5032623 B2 JP 5032623B2 JP 2010072921 A JP2010072921 A JP 2010072921A JP 2010072921 A JP2010072921 A JP 2010072921A JP 5032623 B2 JP5032623 B2 JP 5032623B2
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- Prior art keywords
- semiconductor memory
- organic substrate
- memory device
- memory chip
- lead frame
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
図1は、本発明の第1の実施の形態にかかる半導体記憶装置の外観を示す平面図である。図2は、図1に示す半導体記憶装置の外観を示す底面図である。図3は、図1に示す半導体記憶装置の内部構成を模式的に示す図である。図4は、図1に示す半導体記憶装置のA−A線に沿った断面構造を示す横断面図である。半導体記憶装置10は、例えば、マイクロSDカード(登録商標)である。
Claims (5)
- 一方の面に外部接続端子が設けられた有機基板と、半導体メモリチップとを備える半導体記憶装置であって、
前記有機基板の他方面に接着される接着部、および前記半導体メモリチップが載置される載置部を有するリードフレームと、
前記外部接続端子を露出させて、前記有機基板、前記リードフレーム、および前記半導体メモリチップを封止するとともに、平面視において略方形形状を呈する樹脂モールド部と、をさらに備え、
前記有機基板は、前記接着部に接着された状態で、平面視において前記載置部とほとんど重ならない形状に個片化されており、
前記リードフレームには、前記載置部および前記接着部の少なくとも一方から、前記樹脂モールド部の少なくとも2つ以上の辺に向けて延びるように複数の延出部が形成されていることを特徴とする半導体記憶装置。 - 前記延出部は、前記載置部または前記接着部側の根元部分よりも、前記樹脂モールド部の外部との境界部分のほうが、平面視において細く形成されていることを特徴とする請求項1に記載の半導体記憶装置。
- 前記リードフレームには、前記樹脂モールド部の少なくとも1つの辺に向けて複数の前記延出部が延びるように形成されていることを特徴とする請求項1または2に記載の半導体記憶装置。
- 前記有機基板の一部と前記載置部の一部とが、平面視において重なっていることを特徴とする請求項1〜3のいずれか1項に記載の半導体記憶装置。
- 前記接着部から2つの前記延出部が前記樹脂モールド部の2つの辺に向けて延びていることを特徴とする請求項1〜4のいずれか1項に記載の半導体記憶装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010072921A JP5032623B2 (ja) | 2010-03-26 | 2010-03-26 | 半導体記憶装置 |
TW100107016A TWI442325B (zh) | 2010-03-26 | 2011-03-03 | Semiconductor memory device and manufacturing method thereof |
CN2011100524056A CN102201414B (zh) | 2010-03-26 | 2011-03-04 | 半导体存储装置及其制造方法 |
CN2011200565899U CN202205748U (zh) | 2010-03-26 | 2011-03-04 | 半导体存储装置 |
US13/051,582 US8314478B2 (en) | 2010-03-26 | 2011-03-18 | Semiconductor memory device and manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2010072921A JP5032623B2 (ja) | 2010-03-26 | 2010-03-26 | 半導体記憶装置 |
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JP2011205013A JP2011205013A (ja) | 2011-10-13 |
JP5032623B2 true JP5032623B2 (ja) | 2012-09-26 |
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JP2010072921A Expired - Fee Related JP5032623B2 (ja) | 2010-03-26 | 2010-03-26 | 半導体記憶装置 |
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US (1) | US8314478B2 (ja) |
JP (1) | JP5032623B2 (ja) |
CN (2) | CN102201414B (ja) |
TW (1) | TWI442325B (ja) |
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JP5032623B2 (ja) * | 2010-03-26 | 2012-09-26 | 株式会社東芝 | 半導体記憶装置 |
JP5337110B2 (ja) | 2010-06-29 | 2013-11-06 | 株式会社東芝 | 半導体記憶装置 |
JP2012212417A (ja) | 2011-03-24 | 2012-11-01 | Toshiba Corp | 半導体メモリカード |
JP2013025540A (ja) * | 2011-07-20 | 2013-02-04 | Toshiba Corp | 半導体記憶装置 |
JP2013062470A (ja) * | 2011-09-15 | 2013-04-04 | Powertech Technology Inc | 半導体装置 |
US8611437B2 (en) | 2012-01-26 | 2013-12-17 | Nvidia Corporation | Ground referenced single-ended signaling |
US9338036B2 (en) | 2012-01-30 | 2016-05-10 | Nvidia Corporation | Data-driven charge-pump transmitter for differential signaling |
US9170980B2 (en) * | 2013-03-15 | 2015-10-27 | Nvidia Corporation | Ground-referenced single-ended signaling connected graphics processing unit multi-chip module |
US9171607B2 (en) | 2013-03-15 | 2015-10-27 | Nvidia Corporation | Ground-referenced single-ended system-on-package |
US9153539B2 (en) * | 2013-03-15 | 2015-10-06 | Nvidia Corporation | Ground-referenced single-ended signaling connected graphics processing unit multi-chip module |
US9153314B2 (en) | 2013-03-15 | 2015-10-06 | Nvidia Corporation | Ground-referenced single-ended memory interconnect |
US9147447B2 (en) * | 2013-03-15 | 2015-09-29 | Nvidia Corporation | Ground-referenced single-ended memory interconnect |
US9251870B2 (en) * | 2013-04-04 | 2016-02-02 | Nvidia Corporation | Ground-referenced single-ended memory interconnect |
USD730908S1 (en) * | 2014-05-02 | 2015-06-02 | Samsung Electronics Co., Ltd. | Memory card |
USD730910S1 (en) * | 2014-05-02 | 2015-06-02 | Samsung Electronics Co., Ltd. | Memory card |
USD730907S1 (en) * | 2014-05-02 | 2015-06-02 | Samsung Electronics Co., Ltd. | Memory card |
USD727912S1 (en) * | 2014-06-27 | 2015-04-28 | Samsung Electronics Co., Ltd. | Memory card |
USD727913S1 (en) * | 2014-06-27 | 2015-04-28 | Samsung Electronics Co., Ltd. | Memory card |
USD730909S1 (en) * | 2014-06-27 | 2015-06-02 | Samsung Electronics Co., Ltd. | Memory card |
USD729251S1 (en) * | 2014-06-27 | 2015-05-12 | Samsung Electronics Co., Ltd. | Memory card |
USD727911S1 (en) * | 2014-06-27 | 2015-04-28 | Samsung Electronics Co., Ltd. | Memory card |
USD736214S1 (en) * | 2014-07-01 | 2015-08-11 | Samsung Electronics Co., Ltd. | Memory card |
USD736215S1 (en) * | 2014-07-01 | 2015-08-11 | Samsung Electronics Co., Ltd. | Memory card |
USD736212S1 (en) * | 2014-07-01 | 2015-08-11 | Samsung Electronics Co., Ltd. | Memory card |
USD727910S1 (en) * | 2014-07-02 | 2015-04-28 | Samsung Electronics Co., Ltd. | Memory card |
USD798868S1 (en) * | 2015-08-20 | 2017-10-03 | Isaac S. Daniel | Combined subscriber identification module and storage card |
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USD783621S1 (en) * | 2015-08-25 | 2017-04-11 | Samsung Electronics Co., Ltd. | Memory card |
USD783622S1 (en) * | 2015-08-25 | 2017-04-11 | Samsung Electronics Co., Ltd. | Memory card |
JP2022039765A (ja) * | 2020-08-28 | 2022-03-10 | キオクシア株式会社 | プリント配線板、メモリシステム、およびプリント配線板の製造方法 |
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EP1068640A1 (de) * | 1998-04-06 | 2001-01-17 | Infineon Technologies AG | Verwendung der baulichen beschaffenheit eines elektronischen bauteils als referenz bei der positionierung des bauteils |
JP2002288618A (ja) * | 2001-03-23 | 2002-10-04 | Toshiba Corp | 携帯可能電子媒体及び電子回路部品 |
JP2004349396A (ja) | 2003-05-21 | 2004-12-09 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7193305B1 (en) * | 2004-11-03 | 2007-03-20 | Amkor Technology, Inc. | Memory card ESC substrate insert |
US20060267173A1 (en) * | 2005-05-26 | 2006-11-30 | Sandisk Corporation | Integrated circuit package having stacked integrated circuits and method therefor |
JP2007193763A (ja) * | 2005-12-20 | 2007-08-02 | Toshiba Corp | 半導体メモリカード |
US20090096073A1 (en) * | 2007-10-16 | 2009-04-16 | Kabushiki Kaisha Toshiba | Semiconductor device and lead frame used for the same |
JP4945682B2 (ja) * | 2010-02-15 | 2012-06-06 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
JP2011181697A (ja) * | 2010-03-01 | 2011-09-15 | Toshiba Corp | 半導体パッケージおよびその製造方法 |
JP5032623B2 (ja) * | 2010-03-26 | 2012-09-26 | 株式会社東芝 | 半導体記憶装置 |
JP5337110B2 (ja) * | 2010-06-29 | 2013-11-06 | 株式会社東芝 | 半導体記憶装置 |
JP5242644B2 (ja) * | 2010-08-31 | 2013-07-24 | 株式会社東芝 | 半導体記憶装置 |
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- 2011-03-03 TW TW100107016A patent/TWI442325B/zh active
- 2011-03-04 CN CN2011100524056A patent/CN102201414B/zh active Active
- 2011-03-04 CN CN2011200565899U patent/CN202205748U/zh not_active Expired - Lifetime
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Publication number | Publication date |
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CN202205748U (zh) | 2012-04-25 |
US8314478B2 (en) | 2012-11-20 |
CN102201414B (zh) | 2013-12-18 |
US20110233741A1 (en) | 2011-09-29 |
TWI442325B (zh) | 2014-06-21 |
TW201203128A (en) | 2012-01-16 |
JP2011205013A (ja) | 2011-10-13 |
CN102201414A (zh) | 2011-09-28 |
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