JP6897869B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP6897869B2 JP6897869B2 JP2020514848A JP2020514848A JP6897869B2 JP 6897869 B2 JP6897869 B2 JP 6897869B2 JP 2020514848 A JP2020514848 A JP 2020514848A JP 2020514848 A JP2020514848 A JP 2020514848A JP 6897869 B2 JP6897869 B2 JP 6897869B2
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- wiring
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- semiconductor module
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- pad
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Description
図1は、実施の形態1に係る半導体モジュールを示す平面図である。図2は図1のI−IIに沿った断面図である。図3は、実施の形態1に係る配線用素子を示す平面図である。
図6は、実施の形態2に係る半導体モジュールを示す断面図である。本実施の形態ではベース板として導体板20を用いている。半導体素子4a〜4dと配線用素子5が導体板20の同一平面上に配置されている。導体板20は、例えば銅を主たる材料からなるヒートスプレッダである。ヒートスプレッダは、下面に接合された絶縁シート又は絶縁板により空冷フィン又は水冷フィンなどの冷却筐体から絶縁される。これらの絶縁体とヒートスプレッダは直接接合してもいいし、サーマルグリスなどを介して接合されてもよい。
Claims (17)
- ベース板と、
前記ベース板の上に配置され、パッドを有する半導体素子と、
外部電極と、
前記ベース板の上に配置され、第1の中継パッドと、前記第1の中継パッドよりも前記パッドの近くに配置された第2の中継パッドと、前記第1及び第2の中継パッドを接続する配線とを有する配線用素子と、
前記外部電極と前記第1の中継パッドを接続する第1のワイヤと、
前記パッドと前記第2の中継パッドを接続する第2のワイヤと、
前記半導体素子、前記配線用素子及び前記第1及び第2のワイヤを封止する樹脂とを備え、
前記第2のワイヤは前記第1のワイヤより細く、
前記パッドは前記第1の中継パッドより小さく、
前記半導体素子は複数のトランジスタを有し、
前記第2の中継パッドは、前記複数のトランジスタのゲートにそれぞれ接続された複数のパッドを有し、
前記複数のパッドと前記配線との間に複数のゲート抵抗がそれぞれ接続され、
前記ゲート抵抗はシリコンを主たる成分とする材料からなることを特徴とする半導体モジュール。 - 対応する前記半導体素子の閾値電圧が高いほど前記ゲート抵抗の抵抗値は低いことを特徴とする請求項1に記載の半導体モジュール。
- 前記ベース板の上に形成され、前記半導体素子の下面の電力端子に接続された強電部を更に備え、
前記配線用素子は、前記強電部の上に形成された基板と、前記基板の上に形成された絶縁層とを更に有し、
前記絶縁層の上に前記第1及び第2の中継パッドと前記配線が形成されていることを特徴とする請求項1又は2に記載の半導体モジュール。 - 前記ベース板が導体板であることを特徴とする請求項1又は2に記載の半導体モジュール。
- 前記配線は、環状に配置された第1の配線と、前記第1の配線の内側に配置された第2の配線とを有することを特徴とする請求項1〜4の何れか1項に記載の半導体モジュール。
- 環状の前記第1の配線の一部がオープンになっていることを特徴とする請求項5に記載の半導体モジュール。
- 前記半導体素子は、センス用素子を有する第1の半導体素子と、センス用素子を有しない第2の半導体素子とを有し、
前記第1の半導体素子は、前記第2の半導体素子に比べて前記ベース板の内側に配置されていることを特徴とする請求項1〜6の何れか1項に記載の半導体モジュール。 - 前記半導体素子の表面電極に接合された板状導体を更に備えることを特徴とする請求項1〜7の何れか1項に記載の半導体モジュール。
- 前記配線用素子は、前記配線を覆う被覆膜を有することを特徴とする請求項1〜8の何れか1項に記載の半導体モジュール。
- 前記被覆膜の主たる材料はポリイミドであることを特徴とする請求項9に記載の半導体モジュール。
- 前記半導体素子は化合物半導体基板を有することを特徴とする請求項1〜10の何れか1項に記載の半導体モジュール。
- 前記配線用素子はシリコン基板を有することを特徴とする請求項1〜11の何れか1項に記載の半導体モジュール。
- 前記配線用素子は半絶縁性基板を有することを特徴とする請求項1〜11の何れか1項に記載の半導体モジュール。
- 前記配線用素子はプリント基板であることを特徴とする請求項1〜11の何れか1項に記載の半導体モジュール。
- 前記第2のワイヤの主たる材料は金であることを特徴とする請求項1〜14の何れか1項に記載の半導体モジュール。
- 前記第1のワイヤの主たる材料はアルミニウムであることを特徴とする請求項1〜15の何れか1項に記載の半導体モジュール。
- 前記パッドと前記第2の中継パッドの高さの差が100μm以下であることを特徴とする請求項1〜16の何れか1項に記載の半導体モジュール。
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