CN110574159B - 功率模块、电力变换装置以及功率模块的制造方法 - Google Patents
功率模块、电力变换装置以及功率模块的制造方法 Download PDFInfo
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- CN110574159B CN110574159B CN201880026475.4A CN201880026475A CN110574159B CN 110574159 B CN110574159 B CN 110574159B CN 201880026475 A CN201880026475 A CN 201880026475A CN 110574159 B CN110574159 B CN 110574159B
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Abstract
目的在于获得密封树脂的密合性充分且可靠性高的功率模块。具备:在陶瓷板上形成有导体层(13)的图案的绝缘基板(11);配置于绝缘基板(11)上的功率半导体元件(21、22);从功率半导体元件(21、22)的电极连接到螺纹紧固端子部(611、612)的板状的引线框(611a、612a);以及密封功率半导体元件(21、22)与引线框(611a、612a)的连接部以及周边的密封树脂部(7),在引线框(611a、612a)中,在俯视时至少一部分与绝缘基板11的未形成有导体层13的部分重叠的位置设置有开口部(611b、612b)。
Description
技术领域
本申请涉及在从发电、输电到高效的能量利用、再生的所有情况下利用的功率模块、电力变换装置以及功率模块的制造方法。
背景技术
功率模块适合于高电压、大电流下的使用,在从工业设备到家电、信息终端的所有产品中正在普及。近年来,对于搭载于家电的模块,要求小型轻量化以及能够应对多种类的高生产率和高可靠性。另外,在工作温度高且效率优良这一点上,同时还要求能够应用于很可能成为今后主流的SiC半导体的封装方式。另外,功率模块为了处理高电压、大电流而发热大,出于高效地散热的目的,大多使用热导率优良的陶瓷板作为绝缘基板。进而,随着功率半导体元件的密度变高,为了形成高电流密度的电路,正在使用将电极板(引线框)直接钎焊到功率半导体元件的方法。
这种方式的功率模块大多由环氧树脂制的密封树脂绝缘密封,但密封树脂对于功率模块的密合度通常较低,为了对此进行改善,有时进行UV照射。在此,为了应对功率模块的电压变高和电流变大,Cu电极板倾向于变宽,难以对由此产生的阴暗部分(主要是Cu电极板的壳体根部部分)照射UV,而担心由于增大UV照射时间会对生产率产生影响,或者密封树脂的密合性不足而对可靠性产生影响。与此相对,在专利文献1中,提出了在电极板形成开口部的方案。
现有技术文献
专利文献
专利文献1:日本特开2015-046416号公报(段落0100~0109、图17、图18)
发明内容
发明所要解决的技术课题
然而,专利文献1的目的在于通过改善电极板的正面和背面的密封树脂的黏着性(sticking property)而提高密合力,存在密封树脂对于尤其是陶瓷基板的陶瓷的密合性不足的问题。
本申请是为了解决上述那样的技术课题而完成的,目的在于获得密封树脂的密合性充足且可靠性高的功率模块、电力变换装置以及功率模块的制造方法。
解决技术课题的技术方案
本申请所公开的功率模块的特征在于,具备:绝缘基板,在陶瓷板的两面形成有导体层的图案;半导体元件,配置于所述基板上;板状的电极板,从所述半导体元件的电极连接到外部;以及密封树脂部,密封所述半导体元件与所述电极板的连接部以及所述连接部的周边,在所述电极板中,在俯视时至少一部分与所述绝缘基板的未形成有导体层的部分重叠的位置设置有开口部。
另外,本申请所公开的功率模块的特征在于,具备:绝缘基板,在陶瓷板的两面形成有导体层的图案;半导体元件;配置于所述基板上;板状的电极板,从所述半导体元件的电极连接到外部;以及密封树脂部,密封所述半导体元件与所述电极板的连接部以及所述连接部的周边,在所述电极板中,在俯视时至少一部分与所述绝缘基板的未形成有导体层的部分重叠的位置设置有弯曲部,所述弯曲部在相对于所述电极板的形成方向为规定的角度、且与所述绝缘基板垂直的方向弯折。
本申请所公开的功率模块的制造方法的特征在于,具有:将半导体元件接合到在陶瓷板的两面形成有导体层的图案的绝缘基板上的工序;将所述半导体元件的电极与板状的电极板接合的工序,在该板状的电极板中,在俯视时至少一部分与所述绝缘基板的未形成有导体层的部分重叠的位置设置有开口部;以及在通过照射UV而使所述绝缘基板的形成有导体层的区域以外的区域的所述绝缘基板的表面激发的状态下,对所述半导体元件与所述电极板的连接部以及所述连接部的周边灌入密封树脂并进行密封的工序。
发明效果
根据本申请,通过在电极板覆盖绝缘基板的位置设置规定大小的开口部,能够通过开口部,对引线框的背面侧的绝缘基板的陶瓷部分也照射UV光,能够提高密封树脂对于陶瓷的密合强度。
附图说明
图1是示出实施方式1的功率模块的结构的俯视图。
图2是示出实施方式1的功率模块的结构的剖面图。
图3是实施方式1的功率模块的立体图。
图4是示出实施方式1的功率模块的其它结构的局部俯视图。
图5是示出实施方式1的功率模块的制造工序的剖面图。
图6是示出现有的功率模块的开口部与密合强度的关系的图。
图7是示出实施方式1的功率模块的开口部与密合强度的关系的图。
图8是示出实施方式1的功率模块的开口部的直径与密合强度的关系的图。
图9是示出实施方式1的功率模块的其它结构的剖面图。
图10是示出实施方式2的功率模块的结构的俯视图。
图11是示出实施方式2的功率模块的主要部分的立体图。
图12是示出实施方式2的功率模块的主要部分的剖面图。
图13是示出实施方式2的功率模块的其它结构的俯视图。
图14是示出实施方式2的功率模块的其它结构的剖面图。
图15是示出实施方式2的功率模块的其它结构的主要部分的立体图。
图16是示出实施方式2的功率模块的其它结构的主要部分的立体图。
图17是示出实施方式3的功率模块的结构的俯视图。
图18是示出实施方式3的功率模块的主要部分的立体图。
图19是示出应用了实施方式4的电力变换装置的电力变换系统的结构的框图。
附图标记
7、74密封树脂部、11绝缘基板、21、22功率半导体元件、30、31焊料接合部、611a、612a、613a引线框(电极板)、611、612螺纹紧固端子部、611b、611c、611d、611f、611i、612b、612c、612d、612f、612i、613b开口部、101、102、103、111功率模块、200电力变换装置、201主变换电路、203控制电路、300负载。
具体实施方式
实施方式1.
图1至图3是示出实施方式1的功率模块101的结构的图。图1是俯视图,图2是沿图1的A-A’线的向视剖视图,图3是立体图(无密封树脂)。如图1至图3所示,功率模块101包括:绝缘基板11;配置于绝缘基板11上的功率半导体元件21、22;作为与功率半导体元件21、22的电极电连接的主端子的引线框611a;作为经由导线4与功率半导体元件22电连接的信号端子的引线框62;以及对这些功率半导体元件21、22及其连接的部分的周边进行密封的密封树脂部7。
作为绝缘基板11,使用作为陶瓷板的氮化铝(AlN)基板(例如外形尺寸40mm×25mm×厚度0.6mm)。在绝缘基板11的背面,作为背面电极设置有Cu制的导体层12(例如,图案厚度0.4mm)。在绝缘基板11的正面设置有Cu制的导体层13(例如图案厚度0.4mm),在导体层13上配置有功率半导体元件21、22。
另外,绝缘基板11只要能够获得绝缘性,能够形成如Cu那样的钎料可浸润的导体层,则不限于AlN基板,作为陶瓷板,可以使用例如氧化铝(Al2O3)或碳化硅(SiC)、氮化硅(Si3N4)等绝缘基板基材。
另外,导体层12只要是钎料可浸润的即可,不限于Cu,最表面为Sn、Au、Ag等金属即可。另外,功率半导体元件21、22的正面电极以及背面电极只要是钎料可浸润的金属即可,最表面为Sn、Au、Ag等即可。
作为功率半导体元件21、22,分别使用二极管(例如外形尺寸15mm×15mm×厚度0.3mm)、Si制的IGBT(Insulated Gate Bipolar Transistor(绝缘栅双极型晶体管),例如外形尺寸15mm×15mm×厚度0.3mm),在导体层13上通过钎料贴片键合(未图示)而被粘合固定。此外,也能够使用IC(Integrated Circuit,集成电路)以及MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor,金属氧化物半导体场效应晶体管)这样的功率半导体。另外,在此是二极管和IGBT为1对的1合1的模块结构,但也可以是为两对的2合1或为6对的6合1。
引线框611a由Cu制的电极板(例如,厚度0.6mm)构成,通过钎料接合部30、31分别与设置于功率半导体元件21、22的正面的作为正面电极的主电路电极211、221粘合固定,并与各源极电极电连接。在引线框611a的端部的一方设置有螺纹紧固端子部611,作为主端子(例如,宽度10mm、厚度0.6mm)而固定于壳体51。
另外,对于功率半导体元件21、22与绝缘基板11的连接以及引线框611a与功率半导体元件21、22的连接,使用了钎料,但也可以使用使Ag填料分散于环氧树脂而得到的导电性粘合剂、或者将纳米粒子低温烧制的Ag纳米粉或Cu纳米粉等。
引线框62包括Cu制的电极板,经由Al制的导线4(φ0.15mm),与设置于功率半导体元件22即IGBT的正面的作为正面电极的控制电极222进行引线键合,与栅极电极以及温度传感器电极等电连接。引线框62作为信号端子固定于壳体51。
另外,在此,对于引线键合使用了Al制的导线,但也可以使用Cu制导线或涂有Al的Cu导线或Au导线。另外,也可以使用键合带(bonding ribbon)或对金属板进行超声波接合的汇流条等。另外,引线框62也可以是Al制且通过镀Cu等而被实施了金属包镀。
壳体51(例如外形尺寸48mm×28mm×高度12mm)由PPS(Poly Phenylene Sulfide,聚苯硫醚)树脂制成,形成为框状。以使导体层12露出到外部的方式使用粘合剂8(硅酮制)将绝缘基板11粘合固定于壳体51的底部。
在壳体51,作为另一个主端子,螺纹紧固端子部612与螺纹紧固端子部611一起被固定。引线框612a与绝缘基板11的导体层13直接超声波接合,而螺纹紧固端子部612经由功率半导体元件21、22的各背面电极(未图示)与各漏极电极电连接。根据需要,螺纹紧固端子部611及612也可以被实施镀Cu或镀Ni。此外,作为壳体51的材料,使用PPS树脂,但也可以使用LCP(Liquid Crystal Polymer,液晶聚合物)树脂。
在从螺纹紧固端子部611、612的壳体51突出的、引线框611a及引线框612a的根部部分分别形成有直径2mm的圆形的开口部611b、612b,开口部611b、612b以俯视时与绝缘基板11的无导体层的陶瓷部分11a重叠的方式形成。以使陶瓷部分露出(能被看到)的方式形成。在形成密封树脂部7之前,在对密封树脂所接触的表面进行UV处理而进行表面改性(surface modification)时,设置开口部611b、612b,由此能够通过开口部611b、612b对引线框611a以及引线框612a的根部部分的背面侧的绝缘基板11的陶瓷部分也照射UV光,能够提高密封树脂对于陶瓷的密合强度。
另外,在实施方式1中,将开口部611b、612b设为圆形,但并不限定于此。例如,也可以是具有与开口部611b、612b同等面积且在引线框611a及引线框612a形成的方向上具有长轴的椭圆形或长圆形。即使开口部是圆角的四边形形状,也能够获得同样的效果。图4示出在根部部分具有椭圆形的开口部611c、612c的引线框611a及引线框612a。这样,通过形成在框的长度方向上长的椭圆形的开口部611c、612c,无需缩小大电流流动的方向的框的截面积也能够扩大开口部。
密封树脂部7由灌注树脂(potting resin)形成,对绝缘基板11的正面、导体层13、功率半导体元件21、22、引线框611a、612a、引线框62、导线4以及钎料接合部30、31进行绝缘密封。作为灌注树脂,使用在环氧树脂中分散有二氧化硅等填料的材料。填料不限于二氧化硅,也可以使用氧化铝、BN等。
功率模块101由于流过大电流而发热大,为了高效地散热的目的而使用热导率优良的AlN制的陶瓷板作为绝缘基板11。进而成为对功率半导体元件21、22直接钎焊Cu制的引线框611a的结构。
Cu制的引线框611a的热膨胀系数为17ppm/K,与之相对,接合的功率半导体元件21、22的热膨胀系数为3~3.5ppm/K,搭载功率半导体元件21、22的AlN制的绝缘基板11包含两面的导体层12、13而热膨胀系数整体为约10ppm/K。
作为密封树脂部7,大多使用在环氧树脂中分散有二氧化硅等填料的材料,但硬化后的膨胀系数大多调整为在引线框611a的Cu与绝缘基板11之间。因为由该膨胀系数差引起的热应力,在周边部容易引起温度循环时的剥离等,但在该周边部存在绝缘基板的无导体层的部分的陶瓷部分而与环氧树脂接触。环氧树脂与陶瓷的密合性通常较低,在具有膨胀系数差的情况下,增大密合力在确保可靠性方面尤为重要。
因此,通过在注入密封树脂之前照射UV来改善该密合性,但为了应对功率模块的电压变高和电流变大,引线框611a、612a倾向于变宽,难以对由此形成的阴暗部分(主要是引线框611a、612a的壳体根部部分611ac、612ac)照射UV,担心会由于增大UV照射时间而对生产率产生影响,或者因密封树脂的密合性不足而对可靠性产生影响。
本申请的特征在于,通过在电极板覆盖绝缘基板的位置的、引线框的壳体根部附近的宽度方向的中央附近形成开口部来抑制对UV的遮挡,改善密封树脂对于引线框下部的陶瓷的密合性。
接下来,基于图5对实施方式1的功率模块101的制造方法进行说明。图5是示出实施方式1的功率模块101的制造工序的剖面图。
首先,如图5(a)所示,在两面形成有导体层12、13的绝缘基板11的正面的导体层13上,使用钎料贴片键合(未图示)来粘合固定作为二极管的功率半导体元件21和作为IGBT的功率半导体元件22,与功率半导体元件21、22的各背面电极(未图示)电连接。在功率半导体元件21的正面形成有主电路电极211,在功率半导体元件22的正面形成有主电路电极221和控制电极222,在各自的背面形成有背面电极。
接下来,如图5(b)所示,使用粘合剂8(硅酮制)将绝缘基板11粘合固定于框状的壳体51的底部,以使导体层12露出到外部。粘合剂8填补绝缘基板11与壳体51的间隙,由此还能够防止在后续工序(图5的(e))中填充到壳体51内的灌注树脂泄漏。
在壳体51中,预先通过嵌件成型,引线框611a被配置于壳体框内的上部,而其端部的螺纹紧固端子部611固定于壳体51的上部。另外,预先通过嵌件成型,作为另一个主端子的螺纹紧固端子部612(参照图1)与螺纹紧固端子部611一起被固定于壳体51的上部。
并且,在壳体51的上部,预先通过嵌件成型固定有引线框62。通过将绝缘基板11固定于壳体51的底部,在与功率半导体元件22的正面的控制电极222对应的位置配置引线框62。
接下来,如图5(c)所示,使用钎料将引线框611a与功率半导体元件21、22的各主电路电极211、221粘合固定,形成钎料接合部30、31。由此,引线框611a的螺纹紧固端子部611经由功率半导体元件21、22的各主电路电极211、221而与各源极电极电连接。
引线框612a与绝缘基板11的导体层13直接超声波接合,而螺纹紧固端子部612经由功率半导体元件21、22的各背面电极而与各漏极电极电连接。这样,功率半导体元件21、22的各源极电极以及各漏极电极等大电流流过的电极连接于作为主端子的螺纹紧固端子部611、612。
在从螺纹紧固端子部611、612的壳体51突出的、引线框611a及引线框612a覆盖绝缘基板11的位置的根部部分,分别形成有直径2mm的圆形的开口部611b、612b,开口部611b、612b以使绝缘基板11的陶瓷部分露出(能被看到)的方式形成。
引线框62经由Al制的导线4而与功率半导体元件22的正面的控制电极222进行引线键合。由此,引线框62作为信号端子经由作为IGBT的功率半导体元件22的控制电极222而与栅极电极以及温度传感器电极等电连接。
接下来,如图5(d)所示,对在壳体51内注入密封树脂时与密封树脂接触的表面进行UV照射。此时,借由设置开口部611b、612b,通过开口部611b、612b,对在引线框611a及引线框612a覆盖绝缘基板11的位置的根部部分的背面侧的绝缘基板11的陶瓷部分也能够照射UV光。由此,能够提高密封树脂对于陶瓷的密合强度。
最后,如图5(e)所示,在陶瓷板上UV照射痕迹(照射的变色)消失之前,在陶瓷板的表面由于UV照射而活化的激发状态下,将直接灌注密封树脂在加热至60℃的状态下灌入,进行真空消泡并加热(100℃、1.5小时→140℃、1.5小时)而使其硬化,从而形成密封树脂部7,功率模块101完成。
图6示出以往的未设置有开口部的引线框611a和绝缘基板11的位置与密合强度的实测值。如图6所示,在作为引线框611a的阴影的部分中的端部附近,由于UV绕进,因此不太影响密合性,但在引线框611a与绝缘基板11的间隙G为2mm的情况下,在从端部向引线框中央进入2mm的部分S1,密合强度降低至50%左右。进而,在进入5mm以上的部分几乎没有得到密合强度。
与此相对,图7示出设置有实施方式1的开口部的引线框611a和绝缘基板11的位置与密合强度的实测值。如图7所示,当在距端部10mm处形成直径2mm的开口部时,在开口部正下方密合强度的平均值为80%左右。此外可知,从端部进入5mm的部分处的密合强度的平均值也能够确保80%左右。可知开口部抑制了对UV的遮挡。根据以上的结果认为,在引线框具有引线框611a与绝缘基板11的间隔的2倍以上的宽度的情况下,该开口部尤其表现出降低UV遮挡的效果。
图8示出设置于引线框611a的开口部的直径与开口部正下方的密合强度的实测值。在此,将引线框的厚度设为1mm。如图8所示可知,到开口部直径相对于引线框的厚度1mm为150%为止,密合强度几乎没有改善,但在160%以上的直径下,密合强度逐渐增大,开口部直径为250%时,改善到与露出部没有大的差异的水平。因此,关于开口部的直径,优选为开口部直径相对于引线框的厚度为160%以上且250%以下。
如上所述,根据实施方式1的功率模块101,具有:在陶瓷板上形成有导体层13的图案的绝缘基板11;配置于绝缘基板11上的功率半导体元件21、22;从功率半导体元件21、22的电极连接到螺纹紧固端子部611、612的板状的引线框611a、612a;以及密封功率半导体元件21、22与引线框611a、612a的连接部及其周边的密封树脂部7,在引线框611a、612a中,在俯视时至少一部分与绝缘基板11的未形成有导体层13的部分重叠的位置设置开口部611b、612b,因此通过开口部,对引线框的背面侧的绝缘基板的陶瓷部分也能够照射UV光,能够提高密封树脂对于陶瓷的密合强度。
另外,在密封树脂部的形成中,使用灌注树脂形成密封树脂部7,但不限于此。如图9所示,也可以通过基于使用了模制树脂的传递模塑的密封来形成密封树脂部74。
实施方式2.
在实施方式1中,在引线框611a、612a的根部部分设置开口部,而在实施方式2中,说明进一步对根部部分进行加捻加工(twisting processing)的情况。
图10至图12是示出实施方式2的功率模块102的结构的图。图10是俯视图,图11是图10的功率模块102的引线框611a的开口部611d的立体图,图12是图10的B-B’线处的向视剖视图。如图10至图12所示,在引线框611a及引线框612a的从壳体51突出的根部部分形成有宽度为1mm且长度为5mm的狭缝形状的开口部611d、612d,狭缝形状的开口部611d、612d的左右部分被加捻加工,成为图12所示那样的截面。开口部611d、612d以使绝缘基板11的陶瓷部分露出(能被看到)的方式形成。关于实施方式2的功率模块102的其它结构及制造方法,与实施方式1的功率模块101相同,对于对应的部分标注相同的附图标记并省略其说明。
与实施方式1的不同点如图12所示,将夹着宽度为1mm的狭缝形状的开口部611d、612d的引线框611a、612a的分岔部611aa和611ab以及612aa和612ab以分别立起的方式扭转,由此扩大狭缝宽度,其结果是,作为开口部的尺寸,与实施方式1的直径2mm的圆形孔相比,能够设为同等或更大。由此,能够增大框的最小截面积,能够应对功率模块的电压变高和电流变大。
如上所述,根据实施方式2的功率模块102,开口部611d、612d为狭缝形状,在引线框611a、612a中,夹着狭缝形状的开口部611d、612d的分岔部611aa和611ab以及612aa和612ab以分别立起的方式被扭转,因此不仅能够增大开口部,还能够增大框架的最小截面积,能够应对功率模块的电压变高和电流变大。
另外,在实施方式2中,各自设置一个狭缝形状的开口部,但并不限定于此。即使根据引线框611a、612a的宽度而设置多个狭缝也能够获得同样的效果。另外,使引线框611a、612a的分岔部611aa和611ab以及612aa和612ab分别横向滑动从而扩大狭缝,使分岔部611aa和612ab重叠,也能够获得同样的效果。
另外,如图13和图14所示,为了补偿因开口部611f、612f而失去的引线框611a、612a的截面积,也可以在引线框611a、612a的开口部611f、612f的周围配置键合导线(bonding wire)41。图13和图14示出实施方式2的功率模块102的其它结构。图13是俯视图,图14是沿图13的A-A’线的向视剖视图。键合导线41以俯视时与分岔部611ac、611ad、612ac、612ad重叠的方式配置,通过使得从上方观察时开口部611f、612f不被遮蔽,从而能够避免影响UV照射。
另外,如图15所示,为了补偿因开口部611i(未图示的612i)而失去的引线框611a(未图示的612a)的截面积,使开口部611i(未图示的612i)旁边的分岔部611ae、611af(未图示的612ae、612af)变宽而分别设置旁通部611ag、611ah(未图示的612ag、612ah),使旁通部611ag、611ah(未图示的612ag、612ah)向基板侧或向基板的相反侧弯折90度,由此能够避免影响UV照射。另外,在向基板侧弯折90度的情况下,与向基板的相反侧弯折90度的情况相比,能够在制造时降低密封树脂的液面高度,通过减少密封树脂量,能够实现模块的轻量化。另一方面,在向基板的相反侧弯折90度的情况下,能够抑制在注入密封树脂时带入气泡。进而,如图16所示,通过将旁通部611ag、611ah(未图示的612ag、612ah)弯折180度,也能够避免对UV在倾斜方向的照射造成影响。
实施方式3.
在实施方式1以及实施方式2中,在引线框611a、612a的根部部分设置开口部,而在实施方式3中,对在根部部分形成弯曲部的情况进行说明。
图17和图18是示出实施方式3的功率模块103的结构的图。图17是俯视图,图18是图17的功率模块103的引线框611a的弯曲部611e的立体图。如图17和图18所示,在引线框611a及引线框612a覆盖绝缘基板11的位置的、从壳体51突出的根部部分,分别形成有在从上方观察时相对于引线框的形成方向(长度方向)为45°方向、且与绝缘基板垂直的方向弯折的弯曲部611e、612e。实施方式3的功率模块103的其它结构及制造方法与实施方式1的功率模块101相同,对于对应的部分标注相同的附图标记并省略其说明。
通过这样构成,与平坦地形成引线框611a及引线框612a的根部部分的情况相比,能够缩小投影面积,能够抑制对UV的遮挡。
如上所述,根据实施方式3的功率模块103,在引线框611a及引线框612a的从壳体51突出的根部部分分别形成弯曲部611e、612e,该弯曲部611e、612e在从上方观察时相对于引线框的形成方向为45°方向、且与绝缘基板垂直的方向弯折,因此与平坦地形成的情况相比,能够缩小投影面积,能够抑制对UV的遮挡。另外,关于弯折的方向,在此设为45°,但只要是能够通过冲压加工(press working)而弯折的角度就没有限制,只要在30~60°的范围就能够获得同样的效果。
实施方式4.
实施方式4是将上述实施方式1~3的功率模块应用于电力变换装置的实施方式。本申请并不限定于特定的电力变换装置,以下,作为实施方式4,对将本申请应用于三相逆变器的情况进行说明。
图19是示出应用了实施方式4的电力变换装置的电力变换系统的结构的框图。
图19所示的电力变换系统包括电源100、电力变换装置200、负载300。电源100是直流电源,对电力变换装置200供给直流电力。电源100能够由多种装置构成,例如能够由直流系统、太阳能电池、蓄电池构成,也可以由与交流系统连接的整流电路和AC/DC转换器构成。另外,也可以由将从直流系统输出的直流电力变换为规定的电力的DC/DC转换器来构成电源100。
电力变换装置200是连接于电源100与负载300之间的三相逆变器,将从电源100供给的直流电力变换为交流电力并向负载300供给交流电力。如图19所示,电力变换装置200具备将直流电力变换为交流电力并输出的主变换电路201和将控制主变换电路201的控制信号输出至主变换电路201的控制电路203。
负载300是由从电力变换装置200供给的交流电力来驱动的三相电动机。此外,负载300不限于特定的用途,是搭载于各种电气设备的电动机,被用作对于例如混合动力汽车或电动汽车、铁道车辆、电梯、或者空调设备的电动机。
以下,说明电力变换装置200的详情。主变换电路201具备开关元件和续流二极管(未图示),通过开关元件进行开关,将从电源100供给的直流电力变换为交流电力并供给至负载300。主变换电路201的具体电路结构有多种结构,而实施方式4的主变换电路201是两电平的三相全桥电路,能够由6个开关元件和与各个开关元件反并联的6个续流二极管构成。主变换电路201的各开关元件以及各续流二极管由相当于上述实施方式1~3中的任一个的功率模块(在此以功率模块101进行说明)构成。在6个开关元件中,每两个开关元件串联连接而构成上下支路,各上下支路构成全桥电路的各相(U相、V相、W相)。并且,各上下支路的输出端子、即主变换电路201的3个输出端子连接于负载300。
另外,主变换电路201具备驱动各开关元件的驱动电路(未图示),可以是驱动电路内置于功率模块101,也可以是与功率模块101分开地具备驱动电路的结构。驱动电路生成对主变换电路201的开关元件进行驱动的驱动信号,并供给至主变换电路201的开关元件的控制电极。具体而言,按照来自后述的控制电路203的控制信号,将使开关元件为接通状态的驱动信号和使开关元件为断开状态的驱动信号输出至各开关元件的控制电极。在将开关元件维持于接通状态的情况下,驱动信号为开关元件的阈值电压以上的电压信号(接通信号),在将开关元件维持于断开状态的情况下,驱动信号为开关元件的阈值电压以下的电压信号(断开信号)。
控制电路203控制主变换电路201的开关元件,以便对负载300供给期望的电力。具体而言,基于应供给至负载300的电力来计算主变换电路201的各开关元件应为接通状态的时间(接通时间)。例如,能够利用根据应输出的电压对开关元件的接通时间进行调制的PWM控制,来对主变换电路201进行控制。而且,以在各时点对应该为接通状态的开关元件输出接通信号,对应该为断开状态的开关元件输出断开信号的方式,对主变换电路201所具备的驱动电路输出控制指令(控制信号)。驱动电路按照该控制信号,对各开关元件的控制电极输出接通信号或断开信号作为驱动信号。
在实施方式4的电力变换装置中,由于应用实施方式1~3的功率模块作为主变换电路201的开关元件和续流二极管,因此能够实现可靠性的提高。
在实施方式4中,说明了将本申请应用于两电平的三相逆变器的例子,但本申请不限于此,能够应用于多种电力变换装置。在实施方式4中,设为两电平的电力变换装置,但也可以是三电平或多电平的电力变换装置,在对单相负载供给电力的情况下,也可以将本申请应用于单相逆变器。另外,在对直流负载等供给电力的情况下,也能够将本申请应用于DC/DC转换器或AC/DC转换器。
另外,应用了本申请的电力变换装置并不限定于上述负载为电动机的情况,例如,也能够用作放电加工机或激光加工机、感应加热烹调器、非接触式供电系统的电源装置,还能够用作太阳能发电系统或蓄电系统等的功率调节器。
本申请记载了各种例示性的实施方式以及实施例,但一个或多个实施方式所记载的各种特征、方式以及功能并不限定于特定的实施方式的应用,能够单独地或以各种组合应用于实施方式。因此,在本申请说明书所公开的技术范围内,设想未例示的无数的变形例。例如,包括对至少一个构成要素进行变形的情况、追加的情况或者省略的情况、以及提取至少一个构成要素并与其它实施方式的构成要素进行组合的情况。
Claims (25)
1.一种功率模块,其特征在于,具备:
绝缘基板,在陶瓷板形成有导体层;
半导体元件,配置于所述绝缘基板上;
板状的电极板,连接于所述半导体元件的正面电极;以及
密封树脂部,密封所述半导体元件和所述电极板的至少一部分,
在所述电极板中,在俯视时至少一部分与所述绝缘基板的未形成有所述导体层的部分重叠的位置设置有开口部,以使所述绝缘基板的未形成有所述导体层的所述陶瓷板的至少一部分在俯视时露出的方式形成,
所述电极板的所述开口部具有与所述电极板的厚度的160%以上的直径的圆相当的面积,并被所述密封树脂部密封。
2.根据权利要求1所述的功率模块,其特征在于,所述开口部为狭缝形状,在所述电极板中,夹着所述狭缝形状的开口部的分岔部各自以立起的方式被扭转。
3.根据权利要求1所述的功率模块,其特征在于,在所述电极板中,在俯视时与夹着所述开口部的分岔部重叠的位置设置有基于键合导线的金属布线。
4.根据权利要求1所述的功率模块,其特征在于,在所述电极板中,在夹着所述开口部的分岔部形成扩张所述分岔部的宽幅部,该宽幅部向所述绝缘基板侧或与所述绝缘基板的相反侧弯折。
5.根据权利要求1所述的功率模块,其特征在于,在所述电极板中,在夹着所述开口部的分岔部形成扩张所述分岔部的宽幅部,该宽幅部弯折到俯视时与所述分岔部重叠的位置。
6.根据权利要求1至5中任一项所述的功率模块,其特征在于,所述半导体元件由宽带隙半导体材料形成。
7.根据权利要求6所述的功率模块,其特征在于,所述宽带隙半导体材料是碳化硅、氮化镓类材料以及金刚石中的任意材料。
8.一种电力变换装置,具备:
主变换电路,具有权利要求1至7中任一项所述的功率模块,该主变换电路将输入的电力进行转换而输出;以及
控制电路,对所述主变换电路输出控制所述主变换电路的控制信号。
9.一种功率模块,其特征在于,具备:
绝缘基板,在陶瓷板形成有导体层;
半导体元件,配置于所述绝缘基板上;
板状的电极板,电连接于所述导体层;以及
密封树脂部,密封所述导体层和所述电极板的至少一部分,
在所述电极板中,在俯视时至少一部分与所述绝缘基板的未形成有所述导体层的部分重叠的位置设置有开口部,以使所述绝缘基板的未形成有所述导体层的所述陶瓷板的至少一部分在俯视时露出的方式形成,
所述电极板的所述开口部具有与所述电极板的厚度的160%以上的直径的圆相当的面积,并被所述密封树脂部密封。
10.根据权利要求9所述的功率模块,其特征在于,所述开口部为狭缝形状,在所述电极板中,夹着所述狭缝形状的开口部的分岔部各自以立起的方式被扭转。
11.根据权利要求9所述的功率模块,其特征在于,在所述电极板中,在俯视时与夹着所述开口部的分岔部重叠的位置设置有基于键合导线的金属布线。
12.根据权利要求9所述的功率模块,其特征在于,在所述电极板中,在夹着所述开口部的分岔部形成扩张所述分岔部的宽幅部,该宽幅部向所述绝缘基板侧或与所述绝缘基板的相反侧弯折。
13.根据权利要求9所述的功率模块,其特征在于,在所述电极板中,在夹着所述开口部的分岔部形成扩张所述分岔部的宽幅部,该宽幅部弯折到俯视时与所述分岔部重叠的位置。
14.根据权利要求9至13中任一项所述的功率模块,其特征在于,所述半导体元件由宽带隙半导体材料形成。
15.根据权利要求14所述的功率模块,其特征在于,所述宽带隙半导体材料是碳化硅、氮化镓类材料以及金刚石中的任意材料。
16.一种电力变换装置,具备:
主变换电路,具有权利要求9至15中任一项所述的功率模块,该主变换电路将输入的电力进行转换而输出;以及
控制电路,对所述主变换电路输出控制所述主变换电路的控制信号。
17.一种功率模块,其特征在于,具备:
绝缘基板,由陶瓷构成;
半导体元件,配置于所述绝缘基板上;
板状的电极板,从所述半导体元件的电极连接到外部;以及
密封树脂部,密封所述半导体元件与所述电极板的连接部以及所述连接部的周边,
在所述电极板中,在将所述连接部的周边的所述绝缘基板覆盖的位置,以使所述绝缘基板的陶瓷部分在俯视时露出的方式设置有开口部,
所述电极板的所述开口部具有与所述电极板的厚度的160%以上的直径的圆相当的面积,并被所述密封树脂部密封。
18.根据权利要求17所述的功率模块,其特征在于,所述开口部为狭缝形状,在所述电极板中,夹着所述狭缝形状的开口部的分岔部各自以立起的方式被扭转。
19.根据权利要求17所述的功率模块,其特征在于,在所述电极板中,在俯视时与夹着所述开口部的分岔部重叠的位置设置有基于键合导线的金属布线。
20.根据权利要求17所述的功率模块,其特征在于,在所述电极板中,在夹着所述开口部的分岔部形成扩张所述分岔部的宽幅部,该宽幅部向所述绝缘基板侧或与所述绝缘基板的相反侧弯折。
21.根据权利要求17所述的功率模块,其特征在于,在所述电极板中,在夹着所述开口部的分岔部形成扩张所述分岔部的宽幅部,该宽幅部弯折到俯视时与所述分岔部重叠的位置。
22.根据权利要求17至21中任一项所述的功率模块,其特征在于,所述半导体元件由宽带隙半导体材料形成。
23.根据权利要求22所述的功率模块,其特征在于,所述宽带隙半导体材料是碳化硅、氮化镓类材料以及金刚石中的任意材料。
24.一种电力变换装置,具备:
主变换电路,具有权利要求17至23中任一项所述的功率模块,该主变换电路将输入的电力进行转换而输出;以及
控制电路,对所述主变换电路输出控制所述主变换电路的控制信号。
25.一种功率模块的制造方法,其特征在于,包括:
将半导体元件接合到绝缘基板上的工序,在该绝缘基板中,在陶瓷板形成有导体层的图案;
将所述半导体元件的电极和板状的电极板接合的工序,在该电极板中,在俯视时至少一部分与所述绝缘基板的未形成有导体层的部分重叠的位置设置有开口部,以使所述绝缘基板的未形成有所述导体层的所述陶瓷板的至少一部分在俯视时露出的方式形成;以及
在通过所述开口部对所述绝缘基板中所述电极板的根部部分的背面侧的部分照射UV从而使之激发的状态下,对所述半导体元件与所述电极板的连接部以及所述连接部的周边灌入密封树脂并进行密封的工序。
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DE112018002403T5 (de) | 2020-01-23 |
JPWO2018207656A1 (ja) | 2019-11-07 |
US20200083129A1 (en) | 2020-03-12 |
DE112018002403B4 (de) | 2024-05-02 |
JP6833986B2 (ja) | 2021-02-24 |
US10978366B2 (en) | 2021-04-13 |
CN110574159A (zh) | 2019-12-13 |
WO2018207656A1 (ja) | 2018-11-15 |
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