JP2006202885A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2006202885A JP2006202885A JP2005011397A JP2005011397A JP2006202885A JP 2006202885 A JP2006202885 A JP 2006202885A JP 2005011397 A JP2005011397 A JP 2005011397A JP 2005011397 A JP2005011397 A JP 2005011397A JP 2006202885 A JP2006202885 A JP 2006202885A
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- Prior art keywords
- lead
- semiconductor device
- electrode
- semiconductor element
- wiring
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 229920005989 resin Polymers 0.000 claims abstract description 47
- 239000011347 resin Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 11
- 238000012360 testing method Methods 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 description 23
- 230000017525 heat dissipation Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 238000007689 inspection Methods 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 229910017944 Ag—Cu Inorganic materials 0.000 description 3
- 235000014676 Phragmites communis Nutrition 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920006389 polyphenyl polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009421 internal insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
【解決手段】半導体装置が、表面と裏面とを備えた半導体基板と、表面に設けられた第1電極と、裏面に設けられた第2電極と、表面に設けられ、第1電極と第2電極との間の電流を制御する制御電極とを備えた半導体素子と、半導体素子の第1電極に接続された接合部と、接合部から半導体素子の表面と略平行に延びた配線部とを備えたリード5と、少なくとも半導体素子とリード5を埋込む絶縁樹脂からなる筐体8とを含む。リード5が配線部に貫通孔10を有し、貫通孔10の内部に絶縁樹脂が充填されている。
【選択図】図1
Description
また、リード配線は、ワイヤ配線に比較して幅が広いため、半導体素子の接合状態等を目視等で検査する場合にじゃまになり、検査工程が煩雑になるという問題もあった。
図1は、全体が100で表される、本発明の実施の形態1にかかる電力用半導体装置の斜視図であり、図2は、図1をI−I方向に見た場合の断面図である。図1において、理解が容易となるように、樹脂筐体等を省略してある。
放熱ブロック1は、IGBT2およびFWDi3の放熱手段と、両素子の裏面側の配線との双方を兼ねる。
リード5は、IGBT2との接合部5A、FWDi3との接合部5B、および段差部5Eを介して接合部5A、5Bに接続された配線部5C、5Dを有する。段差部5Eの高さは0.3mmで、リード5を折り曲げて形成されている。接合部5A、5BとIGBT2およびFWDi3の電極とは、それぞれ電気的に接続されている。はんだ4には、例えば厚さが0.1mmのSn−Ag−Cu系はんだが用いられる。接合部5A、5Bと配線部5C、5Dは、略平行となっている。
なお、樹脂封止後にリードフレームが切断され、それぞれの電極端子6A、6B、6Cの樹脂筐体8から露出した部分が、外部端子となる。
このように、本実施の形態1にかかる電力用半導体装置100では、放熱ブロック1と対向する位置にあるリード5に、貫通孔10が設けられている。
なお、導電性接着剤を用いる場合には、はんだの濡れ性の良い金属膜を必ずしも最表面に形成する必要はないが、金属層の酸化によって電気抵抗が増加するため、Auなどの酸化防止層を最表面に形成することが好ましい。
図3は、全体を200で表される、本発明の実施の形態2にかかる電力用半導体装置の断面図である。図3中、図1と同一符合は、同一又は相当箇所を示す。
電力用半導体装置200では、IGBT2およびFWDi3が、はんだ4を用いて絶縁基板11に電気的、機械的に接続されている。絶縁基板11は、AlN(窒化アルミ)板と、その両面に固着された、厚さが0.25mmのCuの配線パターン11Bからなる。IGBT2およびFWDi3は、配線パターンに11Bに電気的に接続されている。
更に、ベース板12の外周には、接着剤(図示せず)を用いて、PPS(ポリフェニルサルファイド)樹脂を用いたケース13が接着され、筐体の一部を形成している
図4は、全体が300で表される、本発明の実施の形態3にかかる電力用半導体装置の斜視図である。図4中、図1と同一符号は同一または相当箇所を示す。また、図4において、理解が容易となるように、樹脂筐体等を省略してある。
また、IGBT2とFWDi3とに挟まれた冷却ブロック1上の配線部5C、およびFWDi3より外方の配線部5Cには、直径が略2mmの略円形の貫通孔10が設けられている。
図5は、全体が400で表される、本発明の実施の形態4にかかる電力用半導体装置の斜視図である。図5中、図1と同一符号は同一または相当箇所を示す。また、図5において、理解が容易となるように、樹脂筐体等を省略してある。
図7は、本発明の実施の形態5にかかる電力用半導体装置に用いるリードの展開図であり、図8は、図7のリードを用いた、全体が500で表される電力用半導体装置の斜視図である。図7、8中、図1と同一符号は同一または相当箇所を示す。また、図8において、理解が容易となるように、樹脂筐体等を省略してある。
IGBT2、FWDi3と接合された接合部5A、5Bの上方に位置するリード5(配線部5C)には貫通孔10Aが設けられている。また、IGBT2とFWDi3との間の、冷却ブロック1の上方に位置するリード5(配線部5C)には、貫通孔10Aより開口面積の小さい貫通孔10が設けられている。
Claims (4)
- 表面と裏面とを備えた半導体基板と、該表面に設けられた第1電極と、該裏面に設けられた第2電極と、該表面に設けられ、該第1電極と該第2電極との間の電流を制御する制御電極とを備えた半導体素子と、
該半導体素子の該第1電極に接続された接合部と、該接合部から該半導体素子の表面と略平行に延びた配線部とを備えたリードと、
少なくとも該半導体素子と該リードを埋込む絶縁樹脂を有する筐体とを備えた半導体装置であって、
該リードが該配線部に貫通孔を有し、該貫通孔の内部に該絶縁樹脂が充填されていることを特徴とする半導体装置。 - 上記配線部が、上記半導体素子の表面に対して略平行でありかつ該表面を覆うように、段差部を介して上記接合部に接続されていることを特徴とする請求項1に記載の半導体装置。
- 上記配線部の該配線部を挟んで対向する位置に、上記接合部が接続されたことを特徴とする請求項2に記載の半導体装置。
- 上記配線部の貫通孔が、少なくとも上記半導体素子の表面を覆っている部分に形成されていることを特徴とする請求項2または3に記載の半導体装置。
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