JP2013232495A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2013232495A
JP2013232495A JP2012103244A JP2012103244A JP2013232495A JP 2013232495 A JP2013232495 A JP 2013232495A JP 2012103244 A JP2012103244 A JP 2012103244A JP 2012103244 A JP2012103244 A JP 2012103244A JP 2013232495 A JP2013232495 A JP 2013232495A
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JP
Japan
Prior art keywords
heat spreader
heat
semiconductor device
heat spreaders
semiconductor
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Pending
Application number
JP2012103244A
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English (en)
Inventor
Daisuke Murata
大輔 村田
Masao Kikuchi
正雄 菊池
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012103244A priority Critical patent/JP2013232495A/ja
Priority to US13/742,079 priority patent/US9059128B2/en
Priority to DE102013201056A priority patent/DE102013201056A1/de
Priority to CN201310093077.3A priority patent/CN103378025B/zh
Publication of JP2013232495A publication Critical patent/JP2013232495A/ja
Pending legal-status Critical Current

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Abstract

【課題】熱応力による反りを抑え、信頼性を向上させることができる半導体装置を得る。
【解決手段】ヒートスプレッダ３ａ〜３ｆは互いに離間して配置されている。トランジスタ素子１ａ〜１ｃがヒートスプレッダ３ａ〜３ｃ上に実装され、その下面がヒートスプレッダ３ａ〜３ｃに接合されている。トランジスタ素子１ｄ〜１ｆがヒートスプレッダ３ｄ〜３ｆ上に実装され、その下面がヒートスプレッダ３ｄ〜３ｆに接合されている。モールド樹脂８がヒートスプレッダ３ａ〜３ｆ及びトランジスタ素子１ａ〜１ｆを覆っている。モールド樹脂８よりも高い剛性を有する補強部材９が、モールド樹脂８内においてヒートスプレッダ３ａ〜３ｆの間の領域を横切って設けられている。
【選択図】図４

Description

本発明は、自動車や電車等のモータを制御するインバータや発電・回生用コンバータに用いる半導体装置に関する。
ヒートスプレッダ上に半導体素子を実装し、ヒートスプレッダ及び半導体素子を樹脂で封止した半導体装置が用いられている（例えば、特許文献１参照）。
特開２００４−１６５２８１号公報
互いに離間した２つのヒートスプレッダ上にそれぞれ半導体素子を実装した半導体装置では、２つのヒートスプレッダの間の領域に樹脂が存在している。樹脂とヒートスプレッダの線膨張係数の違いにより、使用時に熱が発生して温度変化がおこると熱応力が発生する。そのため、過剰に冷熱サイクルが加えられた場合には、２つのヒートスプレッダの間の領域から反りが発生する。さらに、樹脂とヒートスプレッダやリードフレームなどの内蔵部材との間で剥離が進行して、信頼性に影響を与えるという問題があった。
本発明は、上述のような課題を解決するためになされたもので、その目的は熱応力による反りを抑え、信頼性を向上させることができる半導体装置を得るものである。
本発明に係る半導体装置は、第１のヒートスプレッダと、前記第１のヒートスプレッダとは離間して配置された第２のヒートスプレッダと、前記第１のヒートスプレッダ上に実装され、下面が前記第１のヒートスプレッダに接合された第１の半導体素子と、前記第２のヒートスプレッダ上に実装され、下面が前記第２のヒートスプレッダに接合された第２の半導体素子と、前記第１及び第２のヒートスプレッダ、及び前記第１及び第２の半導体素子を覆う樹脂と、前記樹脂内において前記第１のヒートスプレッダと前記第２のヒートスプレッダの間の領域を横切って設けられ、前記樹脂よりも高い剛性を有する補強部材とを備えることを特徴とする。
本発明により、熱応力による反りを抑え、信頼性を向上させることができる。
本発明の実施の形態１に係る半導体装置を示す回路図である。 本発明の実施の形態１に係る半導体装置の内部を示す透視上面図である。 本発明の実施の形態１に係る半導体装置の内部（補強部材は省略）を示す透視上面図である。 図２のＩ−ＩＩに沿った断面図である。 図３のＩＩＩ−ＩＶに沿った断面図である。 本発明の実施の形態１に係る半導体装置の変形例の内部（補強部材は省略）を示す透視上面図である。 本発明の実施の形態２に係る半導体装置を示す断面図である。 本発明の実施の形態３に係る半導体装置の内部を示す透視上面図である。
本発明の実施の形態に係る半導体装置について図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。
実施の形態１．
図１は、本発明の実施の形態１に係る半導体装置を示す回路図である。トランジスタ素子１ａ〜１ｆとダイオード２ａ〜２ｆの６つのペアが３相ハーフブリッジ回路を構成する。Ｕ、Ｖ、Ｗ端子を介して電源からの電力を負荷に供給する。トランジスタ素子１ａ〜１ｆは、電源から供給される電流を必要な時間だけ導通する絶縁ゲート型バイポーラトランジスタ（IGBT: Insulated Gate Bipolar Transistor）である。ダイオード２ａ〜２ｆは、トランジスタ素子１ａ〜１ｆが導通状態から遮断状態になる際に、電流を還流させる。
図２は、本発明の実施の形態１に係る半導体装置の内部を示す透視上面図である。図３は本発明の実施の形態１に係る半導体装置の内部（補強部材は省略）を示す透視上面図である。図４は図２のＩ−ＩＩに沿った断面図である。
ヒートスプレッダ３ａ〜３ｃとヒートスプレッダ３ｄ〜３ｆが左右に離間して配置されている。ヒートスプレッダ３ａ〜３ｆは互いに分離している。トランジスタ素子１ａ〜１ｃ及びダイオード２ａ〜２ｃがヒートスプレッダ３ａ〜３ｃ上にそれぞれ実装され、それらの下面はヒートスプレッダ３ａ〜３ｃにはんだ４で個別に接合されている。トランジスタ素子１ｄ〜１ｆ及びダイオード２ｄ〜２ｆがヒートスプレッダ３ｄ〜３ｆ上にそれぞれ実装され、それらの下面はヒートスプレッダ３ｄ〜３ｆにそれぞれはんだ４で個別に接合されている。
互いに分離した配線部材５ａ〜５ｃがトランジスタ素子１ａ〜１ｃ及びダイオード２ａ〜２ｃの上面にそれぞれはんだ４で個別に接合されている。配線部材５ｄがトランジスタ素子１ｄ〜１ｆ及びダイオード２ｄ〜２ｆの上面にはんだ４で共通に接合されている。なお、はんだ４の代わりに導電性接着剤などを用いてもよい。配線部材５ａ〜５ｃはヒートスプレッダ３ｄ〜３ｆの上面の周縁部にそれぞれ接合されている。互いに分離した配線部材５ｅ〜５ｇはヒートスプレッダ３ａ〜３ｃの上面の周縁部にそれぞれ接合されている。
信号配線６ａ〜６ｃはトランジスタ素子１ａ〜１ｃの制御端子にそれぞれワイヤ接続されている。信号配線６ｄ〜６ｆはトランジスタ素子１ｄ〜１ｆの制御端子にそれぞれワイヤ接続されている。外部との絶縁のために絶縁層７がヒートスプレッダ３ｄ〜３ｆの下面に設けられている。これらのヒートスプレッダ３ａ〜３ｆ、トランジスタ素子１ａ〜１ｆ、ダイオード２ａ〜２ｆ、配線部材５ａ〜５ｇの一部、信号配線６ａ〜６ｆの一部、及び絶縁層７の上面及び側面はモールド樹脂８により覆われている。
配線部材５ａ〜５ｇは装置外部との電力の授受を担っている。配線部材５ａ〜５ｇ及び信号配線６ａ〜６ｆは、例えばリードフレームのように同一の金属板を打ち抜き又はエッチングして外枠で一体的に連結した状態で形成される。その一部をモールド樹脂８で覆って機械的に保持してから外枠を除去して配線部材５ａ〜５ｇ及び信号配線６ａ〜６ｆを分割する。これにより、数の多い配線部材５ａ〜５ｇ及び信号配線６ａ〜６ｆを一括で組み付けすることができるので、生産性が良く、かつ工業上の価値が高くなる。
本実施の形態では、モールド樹脂８よりも高い剛性を有する補強部材９が、モールド樹脂８内においてヒートスプレッダ３ａ〜３ｆの間の領域を横切って設けられている。補強部材９は、トランジスタ素子１ａ〜１ｆやダイオード２ａ〜２ｆと接することなく、トランジスタ素子１ａ〜１ｆやダイオード２ａ〜２ｆよりも上方に設けられている。
補強部材９は例えば金属製のプレート部材である。補強部材９が金属部材であれば、モールド樹脂８に対して十分にヤング率が高いため、補強効果を向上できる。また、補強部材９が繊維強化プラスティックのように強化された有機材料、セラミック材料などであれば、軽量化にも好適である。また、補強部材９はプレート形状のみならず、反り上がる際に屈曲を抑制するようなＬ字、コの字型形状でもよい。
この補強部材９によりヒートスプレッダ３ａ〜３ｆの間の領域を補強することにより、当該領域において熱応力により生ずる反りを抑えることができる。この結果、破損を防いで信頼性を向上させることができる。
また、トランジスタ素子１ａ〜１ｆ、ダイオード２ａ〜２ｆ、ヒートスプレッダ３ａ〜３ｆ、配線部材５ａ〜５ｇ、及び信号配線６ａ〜６ｆは、モータなどの負荷を制御するインバータ回路に必要な３相ハーフブリッジ回路を構成する。このように３相ハーフブリッジ回路を１つの半導体装置で構成する場合にはパッケージサイズが大きくなり、反りの問題が顕著になる。しかし、本実施の形態の構成により反り抑えることができるため、信頼性を向上させることができる。
また、配線部材５ａ〜５ｃは、ヒートスプレッダ３ａ〜３ｃとヒートスプレッダ３ｄ〜３ｆの間の領域を横切って、トランジスタ素子１ａ〜１ｃの上面とヒートスプレッダ３ｄ〜３ｆをそれぞれ接続する。この配線部材５ａ〜５ｃは、電気回路として機能すると共に、当該領域を補強することもできる。従って、部品点数を増やすことなく、熱応力による反りを抑えることができる。この結果、生産性を損なうことなく、信頼性を向上させることができる。
図５は、図３のＩＩＩ−ＩＶに沿った断面図である。配線部材５ａ〜５ｃは平坦な構造でも金属の剛性により補強効果は得られるが、配線部材５ａ〜５ｃの一部に上面から下面方向にコの字状の窪み１０を設けることで厚み方向の剛性を向上させることができる。窪み１０の深さが配線部材５ａ〜５ｃの厚みの１．５倍程度であれば加工が可能で十分な補強効果が得られる。なお、配線部材５ａ〜５ｃの下面から上面方向に窪み１０を設けてもよく、窪み１０はコの字状でなくても三角状や半円状でもよい。
図６は、本発明の実施の形態１に係る半導体装置の変形例の内部（補強部材は省略）を示す透視上面図である。トランジスタ素子１ａ〜１ｃ及びダイオード２ａ〜２ｃが１つのヒートスプレッダ３ｇ上に並んで実装され、それらの下面はヒートスプレッダ３ａにはんだ４で共通に接合されている。これにより、装置の左側は剛性の高いヒートスプレッダ３ｇにより支持されている。配線部材５ｈはヒートスプレッダ３ｇの上面の周縁部に接合されている。
このように同電位のヒートスプレッダ３ａ〜３ｃを１つのヒートスプレッダ３ｇにまとめることでヒートスプレッダ３ｇの長手方向のパッケージの反りを低減することができる。また、部品点数を低減することもでき、アセンブリを簡略化することができる。なお、ヒートスプレッダ３ｇの長手方向は、パッケージの端子取り出し面に平行であれば配線が容易であるため好ましいが、端子取り出し面に垂直方向でもよい。
実施の形態２．
図７は、本発明の実施の形態２に係る半導体装置を示す断面図である。絶縁層７の下方では各素子間の絶縁が確保できているため、絶縁層７の下に複数のヒートスプレッダ３ａ〜３ｆにわたって１枚の銅箔１１を設ける。この銅箔１１は、絶縁層７よりも厚く、ヒートスプレッダ３ａ〜３ｆの間の領域を横切っている。厚くした銅箔１１でヒートスプレッダ３ａ〜３ｆの間の領域を補強することにより、当該領域において熱応力により生ずる反りを抑えることができる。この結果、破損を防いで信頼性を向上させることができる。また、銅箔１１はパッケージと冷却器の接着に利用することもできる。
実施の形態３．
図８は、本発明の実施の形態３に係る半導体装置の内部を示す透視上面図である。ヒートスプレッダ３ｇは、ヒートスプレッダ３ｄ〜３ｆと対向する凹部１２を有する。ヒートスプレッダ３ｄ〜３ｆは、凹部１２に入り込む延設部１３を有する。これにより、ヒートスプレッダ３ｇとヒートスプレッダ３ｄ〜３ｆの間の領域を補強することにより、当該領域において熱応力により生ずる反りを抑えることができる。この結果、破損を防いで信頼性を向上させることができる。なお、延設部１３は半導体素子の形状に沿った長方形が好ましいが、Ｓラインのような曲線状や三角形状でもよい。
１ａ〜１ｃ トランジスタ素子（第１の半導体素子）
１ｄ〜１ｆ トランジスタ素子（第２の半導体素子）
２ａ〜２ｃ ダイオード（第１の半導体素子）
２ｄ〜２ｆ ダイオード（第２の半導体素子）
３ａ〜３ｃ ヒートスプレッダ（第１のヒートスプレッダ）
３ｄ〜３ｆ ヒートスプレッダ（第２のヒートスプレッダ）
５ａ〜５ｈ 配線部材
７ 絶縁層
８ モールド樹脂（樹脂）
９ 補強部材
１０ 窪み
１１ 銅箔（金属層）
１２ 凹部
１３ 延設部

Claims (7)

  1. 第１のヒートスプレッダと、
    前記第１のヒートスプレッダとは離間して配置された第２のヒートスプレッダと、
    前記第１のヒートスプレッダ上に実装され、下面が前記第１のヒートスプレッダに接合された第１の半導体素子と、
    前記第２のヒートスプレッダ上に実装され、下面が前記第２のヒートスプレッダに接合された第２の半導体素子と、
    前記第１及び第２のヒートスプレッダ、及び前記第１及び第２の半導体素子を覆う樹脂と、
    前記樹脂内において前記第１のヒートスプレッダと前記第２のヒートスプレッダの間の領域を横切って設けられ、前記樹脂よりも高い剛性を有する補強部材とを備えることを特徴とする半導体装置。
  2. 前記補強部材は、前記第１及び第２の半導体素子と接することなく前記第１及び第２の半導体素子よりも上方に設けられていることを特徴とする請求項１に記載の半導体装置。
  3. 前記第１及び第２のヒートスプレッダの下面に設けられた絶縁層を更に備え、
    前記補強部材は、前記絶縁層の下に設けられ前記絶縁層よりも厚い金属層であることを特徴とする請求項１に記載の半導体装置。
  4. 第１のヒートスプレッダと、
    前記第１のヒートスプレッダとは離間して配置された第２のヒートスプレッダと、
    前記第１のヒートスプレッダ上に実装され、下面が前記第１のヒートスプレッダに接合された第１の半導体素子と、
    前記第２のヒートスプレッダ上に実装され、下面が前記第２のヒートスプレッダに接合された第２の半導体素子と、
    前記第１及び第２のヒートスプレッダ、及び前記第１及び第２の半導体素子を覆う樹脂とを備え、
    前記第１のヒートスプレッダは、前記第２のヒートスプレッダと対向する凹部を有し、
    前記第２のヒートスプレッダは、前記凹部に入り込む延設部を有することを特徴とする半導体装置。
  5. 前記第１の半導体素子の上面と前記第２のヒートスプレッダを接続し、窪みを有する配線部材を更に備えることを特徴とする請求項１〜４の何れか１項に記載の半導体装置。
  6. 前記第１の半導体素子は複数の半導体素子を有し、
    前記複数の半導体素子の下面は１つの前記第１のヒートスプレッダに共通に接合されていることを特徴とする請求項１〜５の何れか１項に記載の半導体装置。
  7. 前記第１及び第２のヒートスプレッダ及び前記第１及び第２の半導体素子は３相ハーフブリッジ回路を構成することを特徴とする請求項１〜６の何れか１項に記載の半導体装置。
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