JP2007173703A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2007173703A JP2007173703A JP2005372250A JP2005372250A JP2007173703A JP 2007173703 A JP2007173703 A JP 2007173703A JP 2005372250 A JP2005372250 A JP 2005372250A JP 2005372250 A JP2005372250 A JP 2005372250A JP 2007173703 A JP2007173703 A JP 2007173703A
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Abstract
【解決手段】 導電体からなるベース板1,4と、ベース板上に一方の主面が対向するように戴置され、他方の主面上に内部電極を有する半導体素子2、3、5、6と、内部電極に接合された引き出し電極端部7a,8aと、半導体素子の導通電流を外部に導出するための引き出し電極配線部7b、8bと、引き出し電極端部と引き出し電極配線部とを間に空隙を有するように連結する引き出し電極連結部7c、8cとから構成される引き出し電極7、8とを備え、上記引き出し電極配線部は、ベース板の半導体素子が戴置された面の上方から見て、半導体素子と重ならない部分においてベース板に近接するように屈曲させることにより、半導体装置固有の浮遊インダクタンスを小さくする。
【選択図】 図1
Description
以下、本発明の実施の形態1を図に基づいて説明する。図1は本発明に係る半導体装置の実施の形態1を示す平面図(a)、そのA−A断面図(b)及びそのB−B断面図(c)である。平面図においては便宜上封止樹脂を省略している。
以下、本発明の実施の形態2を図に基づいて説明する。図3は本発明に係る半導体装置の実施の形態2を示す平面図(a)及びそのC−C断面図(b)である。平面図においては便宜上封止樹脂を省略している。
Claims (3)
- 導電体からなるベース板と、
前記ベース板上に一方の主面が対向するように戴置され、他方の主面上に内部電極を有する半導体素子と、
前記内部電極に接合された引き出し電極端部と、前記引き出し電極端部と相対する位置に設けられ前記半導体素子の導通電流を外部に導出するための引き出し電極配線部と、前記引き出し電極端部と前記引き出し電極配線部とを間に空隙を有するように連結する引き出し電極連結部とを含む引き出し電極と、
を備えた半導体装置であって、
前記引き出し電極配線部は、前記ベース板の前記半導体素子が戴置された面の上方から見て、前記半導体素子と重ならない部分において前記ベース板に近接するように屈曲されていることを特徴とする半導体装置。 - 導電体からなるベース板と、
前記ベース板上に一方の主面が対向するように戴置され、他方の主面上に内部電極を有する半導体素子と、
前記内部電極に接合された引き出し電極端部と、前記引き出し電極端部と相対する位置に設けられ前記半導体素子の導通電流を外部に導出するための引き出し電極配線部と、前記引き出し電極端部と前記引き出し電極配線部とを間に空隙を有するように連結する引き出し電極連結部とを含む引き出し電極と、
を備えた半導体装置であって、
前記ベース板は、前記半導体素子を収容する凹部を備えていることを特徴とする半導体装置。 - 前記引き出し電極配線部は、少なくとも1つの貫通孔を備えていることを特徴とする請求項1又は請求項2記載の半導体装置。
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JP2005372250A JP4349364B2 (ja) | 2005-12-26 | 2005-12-26 | 半導体装置 |
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JP4349364B2 JP4349364B2 (ja) | 2009-10-21 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7768118B2 (en) | 2008-06-26 | 2010-08-03 | Mitsubishi Electric Corporation | Semiconductor device |
JP2013232495A (ja) * | 2012-04-27 | 2013-11-14 | Mitsubishi Electric Corp | 半導体装置 |
US8884411B2 (en) | 2011-04-19 | 2014-11-11 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
WO2015125772A1 (ja) * | 2014-02-24 | 2015-08-27 | 三菱電機株式会社 | 電極リードおよび半導体装置 |
CN105529319A (zh) * | 2014-10-16 | 2016-04-27 | 三菱电机株式会社 | 半导体装置 |
CN107689368A (zh) * | 2016-08-05 | 2018-02-13 | 株式会社电装 | 具有抑制电位变化的开关元件的半导体装置 |
WO2019187700A1 (ja) * | 2018-03-26 | 2019-10-03 | パナソニックIpマネジメント株式会社 | 半導体モジュール |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9117688B2 (en) | 2011-04-18 | 2015-08-25 | Mitsubishi Electric Corporation | Semiconductor device, inverter device provided with semiconductor device, and in-vehicle rotating electrical machine provided with semiconductor device and inverter device |
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2005
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Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7768118B2 (en) | 2008-06-26 | 2010-08-03 | Mitsubishi Electric Corporation | Semiconductor device |
US8884411B2 (en) | 2011-04-19 | 2014-11-11 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
JP2013232495A (ja) * | 2012-04-27 | 2013-11-14 | Mitsubishi Electric Corp | 半導体装置 |
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CN106952877A (zh) * | 2014-10-16 | 2017-07-14 | 三菱电机株式会社 | 半导体装置 |
JP2016082048A (ja) * | 2014-10-16 | 2016-05-16 | 三菱電機株式会社 | 半導体装置 |
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CN110071072B (zh) * | 2014-10-16 | 2023-12-01 | 三菱电机株式会社 | 半导体装置 |
CN107689368A (zh) * | 2016-08-05 | 2018-02-13 | 株式会社电装 | 具有抑制电位变化的开关元件的半导体装置 |
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JPWO2019187700A1 (ja) * | 2018-03-26 | 2021-02-12 | パナソニックIpマネジメント株式会社 | 半導体モジュール |
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