JP2011216766A - 電極部材およびこれを用いた半導体装置 - Google Patents
電極部材およびこれを用いた半導体装置 Download PDFInfo
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- JP2011216766A JP2011216766A JP2010085083A JP2010085083A JP2011216766A JP 2011216766 A JP2011216766 A JP 2011216766A JP 2010085083 A JP2010085083 A JP 2010085083A JP 2010085083 A JP2010085083 A JP 2010085083A JP 2011216766 A JP2011216766 A JP 2011216766A
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- metal plate
- semiconductor element
- linear expansion
- expansion coefficient
- electrode member
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Abstract
【解決手段】帯状の第1の金属板6MCの一端6E1側から所定長さの領域に第2の金属板6MBが張り合わされた帯状材6Bを、第2の金属板6MBが張り合わされた領域6FBよりも他端6E2側の部分を折り曲げて第1の金属板6MCが第2の金属板6MBの外側に位置するU字形状となし、U字形状の外側となった面において、一端6E1側に半導体素子3との接合面6t1が、他端6E2側に配線部材4との接合面6t2が設けられ、第1の金属板6MCの線膨張係数は、半導体素子3の線膨張係数よりも配線部材4の線膨張係数に近く、第2の金属板6MBが張り合わされた領域6FBにおける帯状材6Bの線膨張係数は、配線部材4の線膨張係数よりも半導体素子3の線膨張係数に近い、ように構成した。
【選択図】図1
Description
図1と図2は、本発明の実施の形態1にかかる半導体装置用電極部材および電力用半導体装置を説明するためのもので、図1は電力用半導体装置のうちの半導体装置用電極部材(以下電極部材と称する)が接合された半導体素子と、電極部材を介して半導体素子と接続された1本のボンディングワイヤ部分を示しており、図1(a)は上面図、図1(b)は図1(a)のA−A線による断面を、図1(c)は電極部材を成型する前のクラッド材の状態を示す断面図である。また、図2は本実施の形態1にかかる電力用半導体装置の製造方法として、電極部材に対してワイヤを接合する方法を説明するための図である。また、図3〜図5は、本実施の形態の変形例にかかる電極部材の構成を示す断面図である。はじめに、電力用半導体装置および電極部材の構成と動作について説明する。
電力用半導体装置10を駆動させると、半導体素子3をはじめとする電力用半導体装置10内の様々な素子に電流が流れ、その際、電気抵抗分の電力ロスが熱へと変換され、発熱が生ずる。このとき、電流は時間的に大きく変化するので、発熱および熱伝導にともなう温度分布は定常的なものではなく過渡的であり、半導体素子3が最高到達温度に達している時間も短時間である。そのため、本実施の形態1にかかる電極部材6のようにワイヤ4と接合面6t2との接合部が、発熱原である半導体素子3の表面から離した構成では、半導体素子3からの熱伝導に遅れが生じ、ワイヤ4と接合面6t2との接合部の温度上昇が抑制される。このため、半導体素子の直上にワイヤ等の配線部材を接合する場合や、半導体素子上に接合された緩衝部材上に配線部材を接合する場合に較べてワイヤとの接合部の温度変化量および最高到達温度が抑制され、熱応力を低減できる。
なお、図1に示す実施の形態1では電極部材6として2層のサイドレイクラッド材6Bを用いた例を示したが、バイメタルの応力を防止するため、図3にように厚み方向において対称となるように三層構成をとるようにしてもよい。図3(a)は一端側16E1において厚み方向の中間部に低熱膨張材16MBを挿入して3層クラッドを構成した板材16Bの断面を示し、図3(b)は板材16Bを良導電部材16MCが外側になるように(本変形例1ではどちら側に曲げても外側になるが)U字形状に折り曲げた電極部材16の断面を示す。本変形例1では、低膨張部材16MBの影響により、第1の接合面16t1が設けられた緩衝部分16FBの線膨張係数はワイヤよりも半導体素子の線膨張係数に近くなっているが、線膨張係数の同じ部材が板材16Bの厚み方向の対称な位置に配置されるようになっているので、接合面16t1側と裏面16t1R側に働く力が均等となり、いわゆるバイメタルのような反りの発生が抑制される。
また、上記実施の形態1や変形例1においては、部分クラッド材を用いることで、一端側と他端側で線膨張係数が異なるようにしたが、本変形例では板材の厚み方向の構成が板材の面の延在方向において一様なクラッド材、いわゆるオーバーレイクラッド材を用いて電極部材を構成した例について示す。図4は、本変形例2にかかる電極部材および電極部材の形成方法を説明するための図であり、図4(a)は板材の断面を、図4(b)はエッチング加工した板材の断面を、図4(c)は電極部材の断面を示す。図において、板材26Bは、低膨張部材26MBを厚み方向の両側から良導電部材26MC1、26MC2で挟み込むようにして一体化し、面の延在方向で材質が一様な3層クラッド材である。このクラッド材26Bに対し、図4(a)に示すように、他端26E2側の曲線E−Eに相当する部分をエッチングにより除去し、3層のうちの、一方の良導電部材16MC1のみを残すようにする。そして、図4(b)に示すように、良導電部材16MC1側が外側になるようにエッチング後の板材26BEをU字形状に折り曲げると、図4(c)に示すような電極部材26が形成できる。
また、本実施の形態にかかる電極部材では、半導体素子との接合面が設けられた部分と配線部材との接合面が設けられた部分とが離れているので、配線部材との接合面の形状が半導体素子の形状の制約を受けなくなる。そのため、配線部材との接合面の大きさを半導体素子の大きさよりも大きくすることができる。図5は、本変形例3にかかる電極部材および電極部材の形成方法を説明するための図であり、図5(a)は板材の平面を、図5(b)は板材を曲げ加工する際の側面を、図5(c)は加工後の電極部材の平面を示す。図において、板材36Bは、低膨張部材36MBが一体化され、第1の接合面36t1が設けられる一端部36E1側の幅は、接合対象の半導体素子の電極面に合わせているが、第2の接合面36t2が設けられる他端36E2側の幅は、一端部36E1側の幅より広くなり、接合面36t2の広さは、半導体素子の電極面よりも大きくなっている。
なお、上記実施の形態や変形例において、半導体素子3に接合される接合面6t1の線膨張係数をクラッド材の低熱膨張材6MBと良導電材6MCの厚みの比率を変えることで制御する例をあげる。たとえば、図3に示す変形例1のようにインバー合金(厚みTB)を銅(厚みTC)で挟んだ3層構造の電極部材の厚み比率TC1:TB:TC2を1:3:1に設定すると、3層構造部分16FBにおける板材としての線膨張係数はおよそ7ppm/Kとなる。
本実施の形態2にかかる電極部材においては、実施の形態1にかかる電極部材のU字形状の内側に形成される空間を樹脂で充填したものである。半導体装置10内への適用といった他の構成部分については、実施の形態1と同様であるので説明を省略する。
本実施の形態3にかかる電極部材においては、実施の形態2にかかる電極部材においてU字形状の内側に形成される空間へ充填していた樹脂に代えて、はんだ材料を充填したものである。半導体装置10内への適用といった他の構成部分については、実施の形態1や2と同様であるので説明を省略する。
6 電極部材(6B 帯状材)、 7 バキュームチャックテーブル、 8 押さえ爪、 9 充填樹脂、 10 電力用半導体装置 。
添え字 FB:第2の金属板が張り合わされた領域(緩衝領域)、MC:良導電部材(第1の金属板)、MB:低膨張部材(第2の金属板)、 t1:第1の接合面、t2:第2の接合面、E1:一端部、E2:他端部
十位の数字の違いは実施の形態1における変形例、百位の数字は実施の形態による構成の相違を示す。
Claims (11)
- 半導体素子と配線部材とを電気接続するための電極部材であって、
帯状の第1の金属板の長さ方向における一端側から所定長さの領域に第2の金属板が張り合わされた帯状材を、前記第2の金属板が張り合わされた領域よりも他端側の部分を折り曲げて前記第1の金属板が前記第2の金属板の外側に位置するU字形状となし、
前記U字形状の外側となった面において、前記一端側から折り曲げ部分までの所定長さの領域に前記半導体素子との接合面が、前記他端側から前記折り曲げ部分までの所定長さの領域に前記配線部材との接合面が設けられ、
前記第1の金属板の線膨張係数は、前記半導体素子の線膨張係数よりも前記配線部材の線膨張係数に近く、
前記第2の金属板が張り合わされた領域における前記帯状材の線膨張係数は、前記配線部材の線膨張係数よりも前記半導体素子の線膨張係数に近い、
ことを特徴とする電極部材。 - 前記帯状材の前記第2の金属板が張り合わされた領域には、前記第1の金属板と同じ線膨張係数の第3の金属板が、前記第2の金属板の上に張り合わされていることを特徴とする請求項1に記載の電極部材。
- 前記帯状材における前記半導体素子との接合面の裏側の面と、前記配線部材との接合面の裏側の面との間には、所定間隔の隙間があることを特徴とする請求項1または2に記載の電極部材。
- 前記帯状材の前記他端側の幅が、前記一端側の幅よりも広いことを特徴とする請求項3記載の電極部材。
- 前記所定間隔の隙間に、樹脂ペレットが充填されていることを特徴とする請求項3または4に記載の電極部材。
- 前記所定間隔の隙間に、はんだ材料が充填されていることを特徴とする請求項3または4に記載の電極部材。
- 絶縁基板に形成された回路パターン上に取り付けられた半導体素子と、
前記半導体素子の前記回路パターンとの取り付け面の反対側の面に前記半導体素子との接合面を接合させた請求項1ないし6のいずれか1項に記載の電極部材と、
前記電極部材の配線部材との接合面に接合された配線部材と、
を備えたことを特徴とする半導体装置。 - 前記帯状材の前記第2の金属板が張り合わされた領域の線膨張係数と前記半導体素子の線膨張係数との差と、
前記第1の金属板の線膨張係数と前記配線部材の線膨張係数との差が、
いずれも当該半導体装置の使用温度範囲内で8ppm/K以下であることを特徴とする請求項7に記載の半導体装置。 - 前記第1の金属板は、前記配線部材の主構成材料と同じ金属材料からなることを特徴とする請求項7または8に記載の半導体装置。
- 前記半導体素子がワイドバンドギャップ半導体材料により形成されていることを特徴とする請求項7ないし9のいずれか1項に記載の半導体装置。
- 前記ワイドバンドギャップ半導体材料は、炭化ケイ素、窒化ガリウム、またはダイヤモンド、のうちのいずれかであることを特徴とする請求項10に記載の半導体装置。
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JP2015149326A (ja) * | 2014-02-05 | 2015-08-20 | ローム株式会社 | パワーモジュールおよびその製造方法 |
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JPWO2019171523A1 (ja) * | 2018-03-08 | 2020-10-22 | 三菱電機株式会社 | 半導体素子、半導体装置、電力変換装置、及び、半導体素子の製造方法 |
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