NL2022613A - RESIN-SEALED TYPE OF SEMICONDUCTOR DEVICE - Google Patents

RESIN-SEALED TYPE OF SEMICONDUCTOR DEVICE Download PDF

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Publication number
NL2022613A
NL2022613A NL2022613A NL2022613A NL2022613A NL 2022613 A NL2022613 A NL 2022613A NL 2022613 A NL2022613 A NL 2022613A NL 2022613 A NL2022613 A NL 2022613A NL 2022613 A NL2022613 A NL 2022613A
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Netherlands
Prior art keywords
resin
semiconductor device
electrode connecting
connecting member
type semiconductor
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Application number
NL2022613A
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Dutch (nl)
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NL2022613B1 (en
Inventor
Nakagawa Masao
Kuwano Ryoji
Shinotake Yohei
Original Assignee
Shindengen Electric Mfg
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Application filed by Shindengen Electric Mfg filed Critical Shindengen Electric Mfg
Publication of NL2022613A publication Critical patent/NL2022613A/en
Application granted granted Critical
Publication of NL2022613B1 publication Critical patent/NL2022613B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
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Abstract

A resin-sealed type semiconductor device 1 according to the present invention includes: a semiconductor chip 10; a lead 20A, 30A having a plurality of electrode connecting members 22, 24, 5 32, and 34 including solder joining electrode connecting members 22, 32 joined to electrodes 12, 66 via solders 70, 74, the lead 20A, 30A being electrically connected to the semiconductor chip 10; and a resin 50 sealing the semiconductor chip 10 and the lead 20A, 30A, Wherein a groove 26, 36 is formed on the lead 20A, 30A between the solder joining electrode connecting member 22, 32 and the electrode connecting member 24, 34. 10 In the resin-sealed type semiconductor device 1 according to the present invention, it is possible to prevent a stress (particularly a thermal stress) Which occurs in the vicinity of the electrode from concentrating on the solder 70, 74 or a region around the solder 70, 74 and hence, it is possible to prevent the occurrence of a crack in the solder 70, 74 or breaking of joining by the solder 70, 74. Accordingly, it is possible to provide the resin-sealed type semiconductor device as a resin-sealed 15 type semiconductor device Which can suppress lowering of reliability of the semiconductor device.A resin-sealed type semiconductor device 1 according to the present invention includes: a semiconductor chip 10; a lead 20A, 30A having a variety of electrode connecting members 22, 24, 5 32, and 34 including solder joining electrode connecting members 22, 32 joined to electrodes 12, 66 via solders 70, 74, the lead 20A, 30A being electrically connected to the semiconductor chip 10; and a resin 50 sealing the semiconductor chip 10 and the lead 20A, 30A, Wherein a groove 26, 36 is formed on the lead 20A, 30A between the solder joining electrode connecting member 22, 32 and the electrode connecting member 24, 34. 10 In the resin-sealed type semiconductor device 1 according to the present invention, it is possible to prevent a stress (particularly a thermal stress) Which occurs in the vicinity of the electrode from concentrating on the solder 70, 74 or a region around the solder 70, 74 and hence, it is possible to prevent the occurrence of a crack in the solder 70, 74 or breaking or joining by the solder 70, 74. It is possible to provide the resin-sealed type semiconductor device as a resin -sealed 15 type semiconductor device Which can suppress lowering of reliability of the semiconductor device.

Description

DESCRIPTION
Title of the Invention: RESIN-SEALED TYPE SEMICONDUCTOR DEVICE
Technical Field [0001]
The present invention relates to a resin-sealed type semiconductor device.
Background Art [0002]
Conventionally, there has been known a resin-sealed type semiconductor device which includes a semiconductor chip, a lead electrically connected to the semiconductor chip, and a resin which seals the semiconductor chip and the lead (for example, see patent literature 1).
[0003]
As shown in Fig. 5, the resin-sealed type semiconductor device 901 includes: semiconductor chips 910A, 910B; a lead 920 having electrode connecting members 922A, 922B which are joined to electrodes of the semiconductor chips 910A, 910B via solders 970; a resin (not showing in Fig. 5); and a substrate 960 which also functions as a heat radiation member.
[0004]
In the conventional resin-sealed type semiconductor device 901, the electrode connecting members 922A, 922B and electrodes of the semiconductor chips 910A, 910B are directly connected to each other only via the solders 970 (without interposing interposing members such as wires). Accordingly, there is provided a resin-sealed type semiconductor device which is suitable to be used in electronic equipment (for example a power source) which has a large current capacitance and uses a large current.
Hereinafter, the electrode connecting member which is joined to the electrode via the solder is referred to as “solder joining electrode connecting member”.
Citation List
Patent Literature [0005]
PTL 1: IP 2006-202885 A
Summary of Invention
Technical Problem [0006]
However, in a conventional resin-sealed type semiconductor device such as the above-mentioned resin-sealed type semiconductor device 901, there may be a case where heat generated in a semiconductor chip during operation propagates to the solder or the solder joining electrode connecting member through the electrode of the semiconductor chip, and a thermal stress generated attributed to the heat concentrates on the solder or a region around the solder. As a result, there may be a case where a crack occurs in the solder or joining by the solder is broken. Accordingly, the conventional resin-sealed type semiconductor device has a drawback that reliability of the semiconductor device is lowered.
[0007]
Heat generated by the semiconductor chip may propagate to an electrode (for example, an electrode of a substrate) which forms a constitutional element other than the semiconductor chip through the substrate joined with the semiconductor chip or the like. In this case, a drawback substantially equal to the above-mentioned drawback may occur also at the destination to which the heat propagates.
Further, a drawback substantially equal to the above-mentioned drawback occurs when a stress other than a thermal stress (for example, an external force attributed to compression or the like) is applied to the electrode and a region around the electrode.
[0008]
The present invention has been made to overcome the above-mentioned drawbacks, and it is an object of the present invention to provide a resin-sealed type semiconductor device which can suppress lowering of reliability of the semiconductor device attributed to direct connection of an electrode connecting member and an electrode via solder.
[Means for overcoming drawbacks] [0009] [TJ A resin-sealed type semiconductor device according to the present invention includes: a semiconductor chip; a lead having a plurality of electrode connecting members including a solder joining electrode connecting member joined to an electrode via solder, the lead being electrically connected to the semiconductor chip; and a resin sealing the semiconductor chip and the lead, wherein at least one of a groove or a cutout is formed in the lead between one electrode connecting member of the plurality of electrode connecting members and the other electrode connecting member different from one electrode connecting member, and at least one of one electrode connecting member or the other electrode connecting member is the solder joining electrode connecting member.
[0010] [2J In the resin-sealed type semiconductor device according to the present invention, it is preferable that the solder joining electrode connecting member be joined to the electrode of the semiconductor chip via the solder.
[0011] [3] In the resin-sealed type semiconductor device of the present invention, it is preferable that the groove be formed in a portion of the lead which is stereoscopically bent.
[0012] [4] In the resin-sealed type semiconductor device according to the present invention, as viewed in a plan view, one electrode connecting member and the other electrode connecting member be connected to each other in a straight-line manner, and the groove be formed such that a longitudinal direction of the groove be orthogonal to a direction directed from the first electrode connecting member toward the other electrode connecting member.
[0013] [5] In the resin-sealed type semiconductor device according to the present invention, it is preferable that the lead have a stress absorbing region where a plurality of the grooves are formed parallel to each other.
[0014] [6] In the resin-sealed type semiconductor device according to the present invention, it is preferable that, in the stress absorbing region, the grooves are formed on both of one surface of the lead and the other surface of the lead on a side opposite to one surface, and each of the grooves formed on a side of one surface and each of the grooves formed on a side of the other surface be arranged so as to be displaced from each other in a longitudinal direction of the lead. [Advantageous effects of invention] [0015]
According to the resin-sealed type semiconductor device of the present invention, at least one of the groove and the cutout is formed in the lead between one electrode connecting member and the other electrode connecting member and hence, a strength of the lead in the vicinity of a place where the groove or the cutout is formed is lowered whereby the lead disposed in the vicinity of the place can be easily deformed. Accordingly, in the resin-sealed type semiconductor device of the present invention, even when a stress (particularly a thermal stress) occurs, a portion of the lead is deformed so as to absorb the stress (to relax the stress). As a result, according to the resin-sealed type semiconductor device of the present invention, it is possible to prevent a stress (particularly a thermal stress) which occurs in the vicinity of the electrode from concentrating on the solder or a region around the solder and hence, it is possible to prevent the occurrence of a crack in the solder or breaking of joining by the solder. Accordingly, it is possible to provide the resin-sealed type semiconductor device according to the present invention as a resin-sealed type semiconductor device which can suppress lowering of reliability of the semiconductor device.
[Brief description of drawings] [0016]
Fig. 1 is a view showing resin-sealed type semiconductor device 1 according to an embodiment 1. Fig. 1(a) and Fig. 1 (b) are plan views of the resin-sealed type semiconductor device 1, Fig. 1(c) is a cross-sectional view taken along a line A-A in Fig. 1(a), and Fig. 1(d) is a view showing a range indicated by B in Fig. 1(c) in an enlarged manner. In Fig. 1(b), to simplify the description of the resin-sealed type semiconductor device 1 (for showing the inner structure), a resin 50 is not wholly shown in the drawing, and only an outer frame of the resin 50 is indicated by a broken line. The illustration of the resin 50 is also substantially adopted by Fig. 2 and Fig. 3 described later. A chain line shown in Fig. 1(d) is an auxiliary line for facilitating understanding of the configuration where the grooves 26 are formed so as to be arranged in a displaced manner from each other. The chain line extends along a thickness direction of a lead 20A at a portion where the grooves 26 are formed, and the chain line passes the center of the groove 26.
Fig. 2 is a plan view showing a resin-sealed type semiconductor device 2 according to an embodiment 2.
Fig. 3 is a plan view showing a resin-sealed type semiconductor device 3 according to an embodiment 3.
Fig. 4 is a view showing a resin-sealed type semiconductor device 4 according to an embodiment 4. Fig. 4(a) is a perspective view of the resin-sealed type semiconductor device 4, Fig. 4(b) is a plan view of the resin-sealed type semiconductor device 4, and Fig. 4(c) is a cross-sectional view showing a cross section taken along a line C-C in Fig. 4(b). In Fig. 4(b), a resin 150 is not shown in the drawing for facilitating the description of the resin-sealed type semiconductor device 4 (for showing the internal structure).
Fig. 5 is a perspective view showing a conventional resin-sealed type semiconductor device 901.
[Mode for carrying out the invention] [0017]
Hereinafter, a resin-sealed type semiconductor device according to the present invention is described based on embodiments shown in the drawings. The respective drawings are schematic views, and do not always strictly reflect actual sizes, structures, configurations and the like. The respective embodiments described hereinafter are not intended to limit the invention relating to Claims. Further, it is not always a case that all of various elements described in the respective embodiments and combinations of these elements are indispensable as means for solving problems of the present invention. In the respective embodiments, constitutional elements basically having the same configurations, technical features, functions and the like (including constitutional elements which are not completely identical with respect to shapes or the like) are indicated by using the same symbols in all embodiments, and the repeated description of these constitutional elements may be omitted.
[0018] [Embodiment 1]
As shown in Fig. 1, a resin-sealed type semiconductor device 1 according to the embodiment 1 includes: a semiconductor chip 10; leads 20A, 30A, 31; wires 31W; aresin 50; and a substrate 60. In the resin-sealed type semiconductor device 1, solder is used for joining electrode connecting members and electrodes and for joining electrodes to each other as described later. [0019]
As shown in Fig. 1(b) and Fig. 1(c), the semiconductor chip 10 has electrodes 12, 14, and 16. The semiconductor chip 10 is an insulated gate bipolar transistor (1GBT). The electrode 12 is an emitter electrode, the electrode 14 is a gate electrode, and the electrode 16 is a collector electrode. [0020]
The electrode 12 (emitter electrode) is joined to a solder joining electrode connecting member 22 of the lead 20A via solder 70, and is connected to the outside via the solder 70 and the lead 20A.
The electrode 16 (collector electrode) is joined to a circuit 64 of the substrate 60 via solder 72, and is connected to the outside via the solder 74, the circuit 64 and the lead 30A.
[0021]
The leads 20A, 30A, and 31 are flat-plate-like metal members. The leads 20A, 30A, and 31 are formed by cutting out portions of a lead frame. The leads 20A, 30A, and 31 respectively have a larger cross sectional area than the wire 31W so that a large electric current can flow through the leads 20A, 30A, and 31. The lead 20A, 30A has a portion which is bent stereoscopically. [0022]
The lead 20A has, as a plurality of electrode connecting members, the solder joining electrode connecting member 22 joined to the electrode 12 of the semiconductor chip 10 via the solder 70, and the electrode connecting member 24 exposed to the outside of the resin 50. Accordingly, it is also safe to say that the plurality of electrode connecting members include the solder joining electrode connecting member 22 connected to the electrode 12 via the solder 70.
The lead 20A is electrically connected to the semiconductor chip 10.
In the embodiment 1, as shown in Fig. 1(b), as viewed in a plan view, the solder joining electrode connecting member 22 and the electrode connecting member 24 are connected to each other in a straight-line manner.
[0023]
Grooves 26 are formed on the lead 20A. The grooves 26 are formed between one electrode connecting member out of the plurality of electrode connecting members ( assuming as the solder joining electrode connecting member 22 in the embodiment 1) and the other electrode connecting member which differs from one electrode connecting member (assuming as the electrode connecting member 24 in the embodiment 1).
[0024]
The grooves 26 are formed on a portion of the lead 20A where the lead 20A is stereoscopically bent.
Further, the grooves 26 are formed such that a longitudinal direction of the grooves 26 is orthogonal to a direction directed from the solder joining electrode connecting member 22 (one electrode connecting member) toward the electrode connecting member 24 (the other electrode connecting member).
[0025]
The lead 20A has a stress absorbing region 26A where a plurality of grooves 26 are formed parallel to each other. In other words, the plurality of grooves 26 form the stress absorbing region 26A.
The number of grooves 26 in the stress absorbing region 26A is an example, and the number of grooves 26 can be set to an arbitrary number provided that the object of the present invention is not impaired. A pitch of the grooves 26 is also set arbitrarily. Although an optimized value of the pitch changes depending on a size of the lead, the pitch may be set to fall within a range of 0.1 mm to 1 mm inclusive, for example. This setting of the pitch of the grooves is also applicable to grooves of a stress absorbing region in respective embodiments described later.
[0026]
As shown in Fig. 1(c) and Fig. 1(d), in the stress absorbing region 26A, the grooves 26 are formed on both of one surface of the lead 20A (a surface on a side where solder 70 is disposed) and the other surface of the lead 20A on a side opposite to one surface.
Each of the grooves 26 formed on a side of one surface and each of the grooves 26 formed on a side of the other surface are arranged so as to be displaced from each other in a longitudinal direction of the lead as shown in Fig. 1(d).
[0027]
Hereinafter, the expressions used in describing the lead are described.
In this specification, “electrode connecting member” includes both of a portion of the lead which is joined to the electrode and a portion of the lead which can be connected to the electrode. The electrode connecting member may be also referred to as “connecting portion”. Further, the electrode connecting member may be also referred to as “terminal” depending on a place.
[0028]
As “a portion of the lead which is joined to the electrode” in this specification, a portion which is joined to the electrode in the resin of the resin-sealed type semiconductor device (the portion being the solder joining electrode connecting member 22, 32 in the resin-sealed type semiconductor device 1) can be exemplified. On the other hand, as “a portion of the lead which can be connected to the electrode”, a portion of the lead which is exposed to the outside of the resin-sealed semiconductor device (the portion being the electrode connecting member 24, 34 in the resin-sealed type semiconductor device 1) can be exemplified. Such a portion is also referred to as a terminal for external connection in general.
“electrode” in this specification is not limited to the electrode which the resin-sealed type semiconductor device includes, and also includes an object to which the resin-sealed type semiconductor device is connected (assembled).
[0029]
In this specification, even when a first constitutional element (for example, the lead) is not directly joined to a second constitutional element (for example, the semiconductor chip), it is assumed that the first constitutional element and the second constitutional element are electrically connected to each other in a state where an electrical transaction between the elements can be performed via a third constitutional element (for example, the substrate).
[0030]
In this specification, “the portion of the lead which is bent stereoscopically” means a portion of the lead where the lead is bent in a thickness direction of the lead. It is also safe to say that such a portion is a portion where a distance between the lead and the electrode along a direction from the electrode to which the lead is joined tow'ard the solder joining electrode connecting member (a distance in a height direction assuming that a direction directed from the electrode to which the lead is joined toward the solder joining electrode connecting member is directed upward in a gravitational direction) changes.
[0031]
In this specification, “one electrode connecting member and the other electrode connecting member are connected to each other in a straight-line manner as viewed in a plan view” means that the portion of the lead which connects one electrode connecting member and the other electrode connecting member to each other exists along a straight line which connects one electrode connecting member and the other electrode connecting member as viewed in a plan view. Even when a notch, a protrusion or the like exists at the portion of the lead which connects one electrode connecting member and the other electrode connecting member to each other, if such a portion exists as a whole along the straight line which connects one electrode connecting member and the other electrode connecting member to each other, such a configuration is included in “one electrode connecting member and the other electrode connecting member are connected to each other in a straight-line manner as viewed in a plan view”.
[0032]
In this specification, “each of the grooves formed on a side of one surface and each of the grooves formed on a side of the other surface are arranged so as to be displaced from each other in a longitudinal direction of the lead” may be also expressed as “a center line of the groove on a side of one surface and a center line of the groove on a side of the other surface do not overlap with each other as viewed in a thickness direction of the lead”, “each of the grooves formed on a side of one surface and each of the grooves formed on a side of the other surface are arranged so as to be displaced from each other in a longitudinal direction of the lead” may be also expressed as “an imaginary straight line which passes the center of the groove on a side of one surface and extends along a thickness direction of the lead and an imaginary straight line which passes the center of the groove on a side of the other surface and extends along the thickness direction of the lead do not overlap with each other”. Accordingly, even when a peripheral edge portion of the groove on a side of one surface and a peripheral edge portion of the groove on a side of the other surface overlap with each other as viewed along the thickness direction of the lead, it is safe to say that each of the grooves formed on a side of one surface and each of the grooves formed on a side of the other surface are arranged so as to be displaced from each other in a longitudinal direction of the lead in the case where the above-mentioned condition relating to the center line is satisfied.
[0033]
The lead 30A has, as the plurality of electrode connecting members, the solder joining electrode connecting member 32 which is joined to the electrode 66 of the substrate 60 via the solder 74 and the electrode connecting member 34 which is exposed to the outside of the resin 50. The lead 30A is electrically connected to the semiconductor chip 10 via the substrate 60.
The electrode 66 is electrically connected to the circuit 64 of the substrate 60. The circuit 64 is joined to the electrode 16 of the semiconductor chip 10 via the solder 72.
[0034]
Grooves 36 are formed on the lead 30A. The grooves 36 are formed between the solder joining electrode connecting member 32 (one electrode connecting member) and the electrode connecting member 34 (the other electrode connecting member).
The grooves 36 are formed on a portion of the lead 30A where the lead 30A is stereoscopically bent.
[0035]
In the embodiment 1, as shown in Fig. 1(b), as viewed in a plan view, the solder joining electrode connecting member 32 (one electrode connecting member) and the electrode connecting member 34 (the other electrode connecting member) are connected with each other in a straight-line manner.
The grooves 36 tire formed such that a longitudinal direction of the grooves 36 is orthogonal to a direction directed from the solder joining electrode connecting member 32 (one electrode connecting member) toward the electrode connecting member 34 (the other electrode connecting member).
[0036]
The lead 30A has a stress absorbing region 36A where the pluralities of grooves 36 are formed parallel to each other. In other words, the plurality of grooves 36 form a stress absorbing region 36A.
In the stress absorbing region 36A, as shown in Fig. 1(c), the grooves 36 are formed on both of one surface of the lead 30A (a surface on a side where the solder 74 is formed) and the other surface of the lead 30A on a side opposite to one surface.
Each of the grooves 36 formed on a side of one surface and each of the grooves 36 formed on a side of the other surface are arranged so as to be displaced from each other in a longitudinal direction of the lead in the same manner as the grooves 26 formed on the lead 20A.
[0037]
One end portion of the lead 31 is connected to the electrode 14 (gate electrode) via the wire 31W. The other end portion of the lead 31 forms the electrode connecting member (a terminal for external connection) which is exposed from the resin 50.
[0038]
The resin 50 seals the semiconductor chip 10 and the leads 20A, 30A. In the resin-sealed type semiconductor device 1, the components are resin-sealed by the resin 50 except for the electrode connecting members 24, 34, the electrode connecting members of the leads 31 (terminals for external connection), and a portion of the metal plate 68 for heat radiation.
A suitable resin can be used as the resin 50.
[0039]
In the embodiment 1, a substrate 60 is a direct copper bonding (DCB) substrate. A suitable substrate (for example, a printed-circuit board or the like) can be also used besides the DCB substrate as the substrate 60. The substrate 60 includes an insulating substrate 62, a circuit 64 formed on one surface of the insulating substrate 62, an electrode 66 connected with the circuit 64 and joined to the solder joining electrode connecting member 32 via solder 74, and a metal plate 68 for heat radiation formed on the other surface of the insulating substrate 62. A portion of the metal plate 68 for heat radiation is exposed from the resin 50.
[0040]
The solders 70, 72, and 74 are made of an alloy or metal having conductivity and adhesiveness.
[0041]
Hereinafter, advantageous effects of the resin-sealed type semiconductor device 1 according to the embodiment 1 are described.
[0042]
According to the resin-sealed type semiconductor device 1 of the embodiment 1, the grooves 26, 36 are formed in the leads 20A, 30A between the solder joining electrode connecting member 22 (one electrode connecting member) and the electrode connecting member 24 (the other electrode connecting member) and hence, a strength of the leads 20A, 30A in the vicinity of places where the grooves 26, 36 are formed is lowered whereby the leads 20A, 30A disposed in the vicinity of the places can be easily deformed. Accordingly, in the resin-sealed type semiconductor device 1 of the embodiment 1, even when a stress (particularly a thermal stress) occurs, portions of the leads 20A, 30A are deformed so as to absorb the stress. As a result, according to the resin-sealed type semiconductor device 1 of the embodiment 1, it is possible to prevent a stress (particularly a thermal stress) which occurs in the vicinity of the electrodes 12, 66 from concentrating on the solders 70, 74 or regions around the solders 70, 74 and hence, it is possible to prevent the occurrence of a crack in the solders 70, 74 or breaking of joining by the solders 70, 74. Accordingly, it is possible to provide the resin-sealed type semiconductor device 1 according to the embodiment 1 as a resin-sealed type semiconductor device which can suppress lowering of reliability of the semiconductor device. [0043]
The semiconductor chip 10 is a heat generating source which generates heat during an operation. Accordingly, a thermal stress which generates during such an operation of the semiconductor chip 10 is particularly liable to be increased in the vicinity of the electrode 12 of the semiconductor chip 10, the solder 70, and the solder joining electrode connecting member 22 of the lead 20A. According to the resin-sealed type semiconductor device 1 of the embodiment 1, the grooves 26 are formed on the lead 20 and hence, the lead 20A can be easily deformed due to the grooves 26 whereby a thermal stress at the portions where the thermal stress is particularly liable to be increased can be absorbed. As a result, lowering of reliability of the resin-sealed type semiconductor device can be further suppressed.
[0044]
In the resin-sealed type semiconductor device 1 according to the embodiment 1, the grooves 26, 36 are formed at portions of the leads 20A, 30A where the leads 20A, 30A are stereoscopically bent. Accordingly, due to the combination of the bent portions of the leads 20A, 30A and the grooves 26, 36, the leads 20A, 30A can be easily deformed stereoscopically (multi-dimensionally). As a result, according to the resin-sealed type semiconductor device 1 of the embodiment 1, even when a large stress or an irregular stress (for example, a stress applied obliquely to the groove) occurs, these stresses can be sufficiently absorbed and hence, lowering of reliability of the resin-sealed type semiconductor device can be further suppressed.
[0045]
According to the resin-sealed type semiconductor device 1 of the embodiment 1, the grooves 26, 36 are formed such that the longitudinal direction of the grooves 26, 36 are orthogonal to the direction directed from the solder joining electrode connecting members 22, 32 (one electrode connecting members) to the electrode connecting members 24, 34 (the other electrode connecting members). Accordingly, it is possible to prevent the leads 20A, 30A from being deformed in a twisting manner relative to the solder joining electrode connecting members 22, 32.
[0046]
In the resin-sealed type semiconductor device 1 according to the embodiment 1, the leads 20A, 30A have stress absorbing regions 26A, 36A where the plurality of grooves 26, 36 are formed parallel to each other. Accordingly, a large stress can be absorbed compared to the case where only one groove 26, 36 is formed in the leads 20A, 30A.
[0047]
According to the resin-sealed type semiconductor device 1 of the embodiment 1, each of the grooves 26, 36 formed on a side of one surface and each of the grooves 26, 36 formed on a side of the other surface are arranged so as to be displaced from each other in a longitudinal direction of the lead. Accordingly, cross sectional areas of the leads 20A, 30A at the stress absorbing regions 26A, 36A can be increased compared to the case where these grooves are not arranged in a displaced manner from each other. As a result, it is possible to reduce an effect of the grooves 26, 36 to a current flow path.
[0048] [Embodiment 2]
A resin-sealed type semiconductor device 2 according to an embodiment 2 basically has substantially the same configuration as the resin-sealed type semiconductor device 1 according to the embodiment 1. However, the resin-sealed type semiconductor device 2 according to the embodiment 2 differs from the resin-sealed type semiconductor device 1 according to the embodiment 1 with respect to a point that notches are formed in place of grooves.
[0049]
As shown in Fig. 2, the resin-sealed type semiconductor device 2 according to the embodiment 2 includes a semiconductor chip 10, leads 20B, 30B, and 31, a resin 50, and a substrate 60. In the above-mentioned configuration, the resin-sealed type semiconductor device 2 according to the embodiment 2 differs from the resin-sealed type semiconductor device 1 according to the embodiment 1 with respect to the leads 20B, 30B. Accordingly, the description of other constitutional elements is omitted. Further, also with respect to the leads 20B, 30B, the description of matters which are substantially equal to the leads 20A, 30A in the embodiment 1 is omitted. [0050]
Notches 27 are formed in the lead 20B instead of grooves. The notches 27 are formed between a solder joining electrode connecting member 22 (one electrode connecting member) and an electrode connecting member 24 (the other electrode connecting member).
Each notch 27 has an elongated shape as viewed in a plan view. The notches 27 are formed such that the longitudinal direction of the notches 27 is orthogonal to the direction directed from the solder joining electrode connecting member 22 (one electrode connecting member) to the electrode connecting member 24 ( the other electrode connecting member).
The notches 27 are formed on a portion of the lead 20B which differs from a portion of the lead 20B which is stereoscopically bent (a portion of the lead 20B on a side close to the electrode 12 of the semiconductor chip 10 with respect to the bent portion of the lead 20B as viewed in a plan view).
[0051]
The notches 37 are also formed in the lead 30B instead of grooves. The notches 37 are formed between a solder joining electrode connecting member 32 (one electrode connecting member) and an electrode connecting member 34 (the other electrode connecting member).
Each notch 37 has an elongated shape as viewed in a plan view. The notches 37 are formed such that the longitudinal direction of the notches 37 is orthogonal to the direction directed from the solder joining electrode connecting member 32 (one electrode connecting member) to the electrode connecting member 34 (the other electrode connecting member).
The notches 37 are formed on a portion of the lead 30B which differs from a bent portion of the lead 30B (a portion of the lead 30B on a side remote from an electrode 66 of the substrate 60 with respect to the bent portion of the lead 30B as viewed in a plan view).
[0052]
The resin-sealed type semiconductor device 2 according to the embodiment 2 differs from the resin-sealed type semiconductor device 1 according to the embodiment 1 with respect to the point that the notches are formed instead of the grooves. However, the notches 27, 38 are formed on the leads 20B, 30B between the solder joining electrode connecting members 22, 32 (one electrode connecting members) and the electrode connecting members 24, 34 (the other electrode connecting members). Accordingly, it is possible to suppress the occurrence of a crack in the solders 70, 74 or breaking of joining due to the solders 70, 74 and hence, it is possible to provide a resin-sealed type semiconductor device which can suppress lowering of reliability of the resin-sealed type semiconductor device.
[0053]
The resin-sealed type semiconductor device 2 according to the embodiment 2 has basically substantially the same configuration as the resin-sealed type semiconductor device 1 according to the embodiment 1 except for the point that the notches are formed instead of the grooves and hence, the resin-sealed type semiconductor device 2 according to the embodiment 2 acquires the corresponding advantageous effects found amongst all advantageous effects which the resin-sealed type semiconductor device 1 according to the embodiment 1 acquires.
[0054] [Embodiment 3]
A resin-sealed type semiconductor device 3 according to an embodiment 3 basically has substantially the same configuration as the resin-sealed type semiconductor device 1 according to the embodiment 1. However, the resin-sealed type semiconductor device 3 according to the embodiment 3 differs from the resin-sealed type semiconductor device 1 according to the embodiment 1 with respect to a point that both grooves and notches are formed.
[0055]
As shown in Fig. 3, the resin-sealed type semiconductor device 3 according to the embodiment 3 includes a semiconductor chip 10, leads 20C, 30C, and 31, a resin 50, and a substrate 60.
Both grooves 26 and notches 27 are formed on the lead 20C, and both grooves 36 and notches 37 are formed on the lead 30C.
The resin-sealed type semiconductor device 3 according to the embodiment 3 has substantially the same configuration as the resin-sealed type semiconductor device 1 according to the embodiment 1 except for that the resin-sealed type semiconductor device 3 according to the embodiment 3 has the notches 27, 37.
The notches 27, 37 are substantially equal to the notches 27, 37 in the embodiment 2 and hence, the description of the notches 27, 37 is omitted.
[0056]
The resin-sealed type semiconductor device 3 according to the embodiment 3 differs from the resin-sealed type semiconductor device 1 according to the embodiment 1 with respect to the point that both the grooves and the notches are formed. However, the grooves 26, 36 and the notches 27, 37 are formed on the leads 20C, 30C between solder joining electrode connecting members 22, 32 (one electrode connecting members) and electrode connecting members 24, 34 ( the other electrode connecting members). Accordingly, it is possible to suppress the occurrence of a crack in solders 70, 74 or breaking of joining due to the solders 70, 74 and hence, it is possible to provide a resin-sealed type semiconductor device which can suppress lowering of reliability of the resin-sealed type semiconductor device.
[0057]
The resin-sealed type semiconductor device 3 according to the embodiment 3 has basically substantially the same configuration as the resin-sealed type semiconductor device 1 according to the embodiment 1 except for the point that both the grooves and the notches are formed and hence, the resin-sealed type semiconductor device 3 according to the embodiment 3 acquires the corresponding advantageous effects found amongst all advantageous effects which the resin-sealed type semiconductor device 1 according to the embodiment 1 acquires.
[0058] [Embodiment 4]
A resin-sealed type semiconductor device 4 according to an embodiment 4 basically has substantially the same configuration as the resin-sealed type semiconductor device 1 according to the embodiment 1. However, the resin-sealed type semiconductor device 4 according to the embodiment 4 differs from the resin-sealed type semiconductor device 1 according to the embodiment 1 with respect to the number of semiconductor chips, the number, a shape and the like of leads.
hi the explanation made hereinafter, there may be a case where the description of constitutional elements corresponding to the constitutional elements having the same names described in the resin-sealed type semiconductor devices 1 to 3 according to the embodiments 1 to 3 is simplified or omitted.
[0059]
As shown in Fig. 4, the resin-sealed type semiconductor device 4 according to the embodiment 4 has semiconductor chips 110A, HOB, leads 120, 130, 140, and 131, wires 131W, a resin 150, and substrates 160A, 160B. In the resin-sealed type semiconductor device 4, solder is used for joining electrode connecting members and electrodes and for joining the electrodes to each other.
[0060]
As shown in Fig. 4(b) and Fig. 4(c), the semiconductor chip 110A has the electrodes 112A, 114 A, and 116A. As shown in Fig. 4(b), the semiconductor chip 110B also has the electrodes 112B, 114B and the electrode corresponding to the electrode 116A of the semiconductor chip 110A (not shown in the drawing). The semiconductor chips 110A, 110B are formed of an 1GBT.
[0061]
The lead 120 has a solder joining electrode connecting member 122 joined to the electrode 112A of the semiconductor chip 110A via solder 170, and an electrode connecting member 124 exposed to the outside of the resin 150. The lead 120 is electrically connected with the semiconductor chip 110A.
In the embodiment 4, as shown in Fig. 4(b), the solder joining electrode connecting member 122 and the electrode connecting member 124 are connected to each other in a straight-line manner as viewed in a plan view.
[0062]
Grooves 126, 128 are formed on the lead 120. The grooves 126 are formed between the solder joining electrode connecting member 122 (one electrode connecting member) and the electrode connecting member 124 (the other electrode connecting member). On the other hand, the grooves 128 are formed on the solder joining electrode connecting member 122.
The grooves 126 are formed in a portion of the lead 120 which is stereoscopically bent. [0063]
The grooves 126, 128 are formed such that the longitudinal direction of the grooves 126, 128 is orthogonal to the direction directed from the solder joining electrode connecting member 122 (one electrode connecting member) to the electrode connecting member 124 (the other electrode connecting member).
[0064]
The lead 120 has stress absorbing regions 126A, 128 A where the plurality of grooves 126, 128 are formed parallel to each other. In other words, the plurality of grooves 126 form the stress absorbing region 126A, and the plurality of grooves 128 form the stress absorbing region 128A. [0065]
As shown in Fig. 4(c), in the stress absorbing region 126A, the grooves 126 are formed on both one surface of the lead 120 (a surface on a side where the solder 170 exists) and the other surface of the lead 120.
In the stress absorbing region 126A, each of the grooves 126 formed on the side of one surface and each of the grooves 126 formed on the side of the other surface are arranged so as to be displaced from each other in a longitudinal direction of the lead.
In the stress absorbing region 128A, the grooves 128 are formed only on a surface of the lead 120 corresponding to a side of the other surface of the stress absorbing region 126A.
[0066]
Notches 127 are also formed on the lead 120 besides the grooves 126, 128. The notches 127 are formed between the solder joining electrode connecting member 122 (one electrode connecting member) and the electrode connecting member 124 (the other electrode connecting member).
Each notch 127 has an elongated shape as viewed in a plan view. The notches 127 are formed such that the longitudinal direction of the notches 127 is orthogonal to the direction directed from the solder joining electrode connecting member 122 (one electrode connecting member) to the electrode connecting member 124 (the other electrode connecting member).
The notches 127 are formed on a portion of the lead 120 on a side close to the electrode
112A with respect to the bent portion of the lead 120.
[0067]
The lead 130 has, as a plurality of electrode connecting members, a solder joining electrode connecting member 132 joined to an electrode 166A of the substrate 160A via solder (not shown in the drawing), a solder joining electrode connecting member 133 joined to the electrode 112B of the semiconductor chip HOB via solder (not shown in the drawing), and an electrode connecting member 134 exposed to the outside of the resin 150. The lead 130 is electrically connected to the semiconductor chip 110A via the substrate 160A, and is also electrically connected to the semiconductor chip 110B.
As shown in Fig. 4(b), in the embodiment 4, the solder joining electrode connecting member 132 and the solder joining electrode connecting member 133 are connected with each other in a straight-line manner as viewed in a plan view.
[0068]
Although the detailed illustration is omitted, the electrode 166A is electrically connected with a circuit 164A of the substrate 160A, and the circuit 164A is joined to the electrode 116A of the semiconductor chip 110A via solder 172.
[0069]
Grooves 136, 138 are formed on the lead 130. The grooves 136, 138 are formed between the solder joining electrode connecting member 132, the solder joining electrode connecting member 133, and the electrode connecting member 134. In the resin-sealed type semiconductor device 4, any one of the solder joining electrode connecting member 132, the solder joining electrode connecting member 133, and the electrode connecting member 134 corresponds to one electrode connecting member, and the electrode connecting member which does not form one electrode connecting member corresponds to the other electrode connecting member.
The grooves 138 are formed on a portion of the lead 130 which is stereoscopically bent. [0070]
The grooves 136 are formed such that the longitudinal direction of the grooves 136 extends along the direction orthogonal to the direction directed from the solder joining electrode connecting member 132 to the solder joining electrode connecting member 133.
[0071]
The lead 130 has stress absorbing regions 136A, 138A where the plurality of grooves 136, 138 are formed parallel to each other. In other words, the plurality of grooves 136 form the stress absorbing region 136A, and the plurality of grooves 138 form the stress absorbing region 138A. [0072]
In the stress absorbing region 138A, the grooves 138 are formed on both one surface of the lead 130( a surface on a side where the solder exists) and the other surface of the lead 130. However, the grooves 138 formed on the side of one surface are not shown in the drawing.
In the stress absorbing region 138A, each of the grooves 138 formed on the side of one surface and each of the grooves 138 formed on the side of the other surface are arranged so as to be displaced from each other in a longitudinal direction of the lead 130.
[0073]
Notches 137 are also formed on the lead 130. The notches 137 are formed between the solder joining electrode connecting member 132 and the solder joining electrode connecting member 133.
[0074]
The lead 140 has, as a plurality of electrode connecting members, a solder joining electrode connecting member 142 joined to an electrode 164B of the substrate 160B via solder (not shown in the drawing), and an electrode connecting member 144 exposed to the outside of the resin 150. The lead 140 is electrically connected to the semiconductor chip 110B via the substrate 160B.
[0075]
Although the detailed illustration is omitted, the electrode 166B is joined to one electrode (the electrode corresponding to the electrode 116A in the semiconductor chip 110A) out of the electrodes of the semiconductor chip HOB via the electrode of the substrate 160B.
In the embodiment 4, as shown in Fig. 4( b), the solder joining electrode connecting member 142 and the electrode connecting member 144 are connected with each other in a straight-line manner as viewed in a plan view.
[0076]
Grooves 146 are formed on the lead 140. The grooves 146 are formed between the solder joining electrode connecting member 142 (one electrode connecting member) and the electrode connecting member 144 (the other electrode connecting member).
The grooves 146 are formed on a portion of the lead 140 which is stereoscopically bent. [0077]
The grooves 146 are formed such that the longitudinal direction of the grooves 146 extends along the direction orthogonal to the direction directed from the solder joining electrode connecting member 142 to the electrode connecting member 144.
[0078]
The lead 140 has a stress absorbing region 146A where the plurality of grooves 146 are formed parallel to each other. In other words, the plurality of grooves 146 form the stress absorbing region 146A.
[0079]
In the stress absorbing region 146A, the grooves 146 are formed on both one surface of the lead 140 (a surface on a side where the solder exists) and the other surface of the lead 140. Howe ver, the grooves 146 formed on the side of one surface are not shown in the drawing.
In the stress absorbing region 146A, each of the grooves 146 formed on the side of one surface and each of the grooves 146 formed on the side of the other surface are arranged so as to be displaced from each other in a longitudinal direction of the lead.
[0080]
One end portions of the leads 131 are connected to electrodes 114A, 114B via wires 131W. The other end portions of the leads 131 form electrode connecting members (terminals for external connection) exposed from the resin 150.
[0081]
Portions of the resin-sealed type semiconductor device 4 are resin-sealed by the resin 150 except for the electrode connecting members 124, 134, and 144, the electrode connecting members (terminals for external connection) of the leads 131, and a portion of a metal plate 168 for heat radiation.
[0082]
Also in the embodiment 4, a DCB substrate is used for forming the substrates 160A, 160B. The substrate 160A includes an insulating substrate 162A, a circuit 164A formed on one surface of the insulating substrate 162A, an electrode 166A connected to the circuit 164A and joined with the solder joining electrode connecting member 132 via solder, and the metal plate 168 A for heat radiation formed on the other surface of the insulating substrate 162A. Although the illustration of the entire structure of the substrate 160B is omitted, the substrate 160B has basically substantially the same structure as the substrate 160A.
[0083]
The resin-sealed type semiconductor device 4 according to the embodiment 4 differs from the resin-sealed type semiconductor device 1 according to the embodiment 1 with respect to the number and the shapes of the semiconductor chips and the leads. However, the grooves 126, 128, 136, 138, and 146 and the notches 127, 137 are formed on the leads 120, 130, and 140 between the solder joining electrode connecting members 122, 132, 133, and 142 (one electrode connecting members) and the electrode connecting members 124, 134, and 144 (the other electrode connecting members). Accordingly, it is possible to suppress the occurrence of a crack in the solder 170 or the like or breaking of joining due to the solder 170 or the like and hence, it is possible to provide a resin-sealed type semiconductor device which can suppress lowering of reliability of the resin-sealed type semiconductor device.
[0084]
The resin-sealed type semiconductor device 4 according to the embodiment 4 has basically substantially the same configuration as the resin-sealed type semiconductor device 1 according to the embodiment 1 except for the number and shapes of the semiconductor chips and the leads and hence, the resin-sealed type semiconductor device 4 according to the embodiment 4 acquires the corresponding advantageous effects found amongst all advantageous effects which the resin-sealed type semiconductor device 1 according to the embodiment 1 acquires.
[0085]
Although the present invention has been described heretofore based on the above-mentioned respective embodiments, the present invention is not limited to the above-mentioned respective embodiments. Various modifications can be carried out in various modes without departing from the gist of the present invention, and the following modifications are also conceivable, for example.
[0086] (1) The materials, the shapes, the numbers, the positions, the sizes and the like of the constitutional elements described in the above-mentioned respective embodiments are provided for an exemplifying purpose, and can be modified within a range where the advantageous effects of the present invention are not jeopardized.
[0087] (2) In the above-mentioned respective embodiments, an IGBT is used as the respective semiconductor chips. However, the present invention is not limited to such a semiconductor chip. The respective semiconductor chips may be any other semiconductor elements each having three terminals (for example, a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)). The semiconductor chip may be a semiconductor element having two terminals (for example, a diode). The semiconductor chip may be a semiconductor element having four or more terminals (for example, a thyristor may be used as a semiconductor element having four terminals).
[0088] (3) In the above-mentioned respective embodiments, the resin-sealed type semiconductor device having one or two semiconductor chips is exemplified as the resin-sealed type semiconductor device of the present invention. However, the present invention is not limited to such a resin-sealed type semiconductor device. For example, a resin-sealed type semiconductor device may have three or more semiconductor chips.
[0089] (4) In the above-mentioned respective embodiments, a so-called vertical-type resin-sealed type semiconductor device where a collector electrode is disposed on one surface of a semiconductor chip, and an emitter electrode and a gate electrode are disposed on the other surface of the semiconductor chip is used as the respective resin-sealed type semiconductor devices of the present invention.
However, the present invention is not limited to such a resin-sealed type semiconductor device. For example, a so-called lateral-type resin-sealed type semiconductor device which has all electrodes on a surface on a side opposite to a surface on a substrate side may be used as the resin-sealed type semiconductor device of the present invention.
[0090] (5) In the above-mentioned respective embodiments, the description has been made with respect to the case where the longitudinal direction of the grooves is orthogonal to the direction directed from one electrode connecting member toward the other electrode connecting member as an example. However, the present invention is not limited to such a case. An effect of absorbing a stress (particularly a thermal stress) can be obtained provided that at least the grooves are formed such that the longitudinal direction of the grooves intersects with the direction directed from one electrode connecting member toward the other electrode connecting member. Depending on the configuration of the lead, the grooves may be formed such that the longitudinal direction of the grooves extends along the direction directed from one electrode connecting member toward the other electrode connecting member.
[0091] (6) From a viewpoint that a stress is efficiently absorbed by combination of the notches and the portion of the lead which is stereoscopically bent in the present invention, the notches may be formed on a portion of the lead on a side close to the electrode with respect to the portion of the lead which is stereoscopically bent or may be formed on a portion of the lead on a side remote from the electrode with respect to the portion of the lead which is stereoscopically bent.
Reference Signs List [0092]
1, 2, 3, 4: resin-sealed type semiconductor device
10, 110A, HOB: semiconductor chip
12, 14, 16, 112A, 112B, 114A, 114B, 116A: electrode (of semiconductor chip)
20A, 20B, 20C, 30A, 30B, 30C, 31, 120, 130, 131, 140: lead
22, 24, 32, 34, 122, 124, 132, 133, 134, 142, 144: electrode connecting member
26, 36, 126, 128, 136, 138, 146: groove
26A, 36A, 126A, 128A, 136A, 138A, 146A: stress absorbing region
27, 37, 127, 137: notch
31W, 131W: wire
60, 160A, 160B: substrate
62, 162A: insulating substrate
64, 164A: circuit
66, 166A, 166B: electrode (of substrate)
68, 168A: metal plate
70, 72, 74, 170, 172: solder

Claims (6)

ConclusiesConclusions 1. Halfgeleiderinrichting van het hars-afgedichte type (Engels: “resin-sealed type semiconductor device”) omvattende:A resin-sealed type semiconductor device (English: "resin-sealed type semiconductor device") comprising: een halfgeleiderchip;a semiconductor chip; een bedrading (Engels: “lead”) met een veelvoud aan elektrodeverbindingsleden met inbegrip van een soldeerverbindings-elektrodeverbindingslid (Engels: “solder joining electrode connecting member”) dat is verbonden aan een elektrode middels soldeer, waarbij de bedrading elektrisch is verbonden met de halfgeleiderchip; en een hars die de halfgeleiderchip en de bedrading afdicht, waarbij een groef in de bedrading is gevormd tussen een ene elektrodeverbindingslid van het veelvoud aan elektrodeverbindingsleden en een ander elektrodeverbindingslid die verschilt van het ene elektrodeverbindingslid;a wiring (English: "lead") with a plurality of electrode connection members including a solder connection electrode connection member (solder joining electrode connecting member) connected to an electrode by solder, the wiring being electrically connected to the semiconductor chip ; and a resin sealing the semiconductor chip and the wiring, wherein a groove is formed in the wiring between one electrode connection member of the plurality of electrode connection members and another electrode connection member different from the one electrode connection member; ten minste één van het ene elektrodeverbindingslid of het andere elektrodeverbindingslid het soldeerverbindings-elektrodeverbindingslid is, de bedrading een deel heeft dat driedimensionaal is gebogen, de groef op het deel van de bedrading is gevormd dat driedimensionaal is gebogen, zowel de groef als een uitsparing op de bedrading zijn gevormd; en de uitsparing op een deel van de bedrading is gevormd dat verschilt van het deel van de bedrading dat driedimensionaal is gebogen.at least one of the one electrode connection member or the other electrode connection member is the solder connection electrode connection member, the wiring has a portion bent three-dimensionally, the groove is formed on the part of the wiring that is bent three-dimensionally, both the groove and a recess on the wiring are formed; and the recess is formed on a portion of the wiring that is different from the portion of the wiring that is bent three-dimensionally. 2. Halfgeleiderinrichting van het hars-afgedichte type volgens conclusie 1, waarbij het soldeerverbindings-elektrodeverbindingslid is verbonden met de elektrode van de halfgeleiderchip via de soldeer.The resin-sealed type semiconductor device of claim 1, wherein the solder connection electrode connection member is connected to the electrode of the semiconductor chip via the solder. 3. Halfgeleiderinrichting van het hars-afgedichte type volgens conclusie 1 of 2, waarbij het ene elektrodeverbindingslid en het andere elektrodeverbindingslid met elkaar zijn verbonden in een rechtlijnige wijze als gezien vanuit een bovenaanzicht, en de groef zodanig is gevormd dat een longitudinale richting van de groef orthogonaal is aan een richting die is gericht vanaf het ene elektrodeverbindingslid naar het andere elektrode verbindingslid.The resin-sealed type semiconductor device according to claim 1 or 2, wherein the one electrode connection member and the other electrode connection member are connected to each other in a linear manner as viewed from a plan view, and the groove is formed such that a longitudinal direction of the groove is orthogonal to a direction directed from one electrode connector to the other electrode connector. 4. Halfgeleiderinrichting van het hars-afgedichte type volgens een van de conclusies 1-3, waarbij de bedrading een belastingabsorberend gebied (Engels: “stress absorbing region”) heeft, waar een veelvoud aan groeven parallel aan elkaar zijn gevormd.A resin-sealed type semiconductor device as claimed in any one of claims 1-3, wherein the wiring has a load-absorbing region where a plurality of grooves are formed parallel to each other. 5. Halfgeleiderinrichting van het hars-afgedichte type volgens conclusie 4, waarbij in het belastingsabsorberende gebied, de groeven zijn gevormd op beide van een ene oppervlak van de bedrading en een ander oppervlak van de bedrading aan een zijde tegenoverliggend aan het ene oppervlak respectievelijk, en elk van de groeven gevormdThe resin-sealed type semiconductor device of claim 4, wherein in the load absorbing region, the grooves are formed on both of one surface of the wiring and another surface of the wiring on a side opposite to the one surface, respectively, and each of the grooves formed 5 aan een zijde van het ene oppervlak en elk van de groeven gevormd op een zijde van het andere oppervlak zijn ingericht zodat ze van elkaar af zijn verplaatst in een longitudinale richting van de bedrading.5 on one side of the one surface and each of the grooves formed on one side of the other surface are arranged so that they are moved apart in a longitudinal direction of the wiring. 6. Halfgeleiderinrichting van het hars-afgedichte type volgens conclusie 4 of 5, waarbij een afstand (Engels: “pitch”) van de groeven is ingesteld op een waarde binnen een bereik van 0,1 mm tot 1 mm.The resin-sealed type semiconductor device according to claim 4 or 5, wherein a pitch (English: pitch) of the grooves is set to a value within a range of 0.1 mm to 1 mm.
Figure NL2022613A_C0001
Figure NL2022613A_C0001
Figure NL2022613A_C0002
Figure NL2022613A_C0002
Figure NL2022613A_C0003
Figure NL2022613A_C0003
 2/42/4
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