JP3639302B2 - Resin-sealed semiconductor device - Google Patents

Description

  The present invention relates to a resin-encapsulated semiconductor device in which a semiconductor chip and a lead frame connected to the semiconductor chip are encapsulated with resin, and more particularly to a measure for improving reliability.

  In recent years, there has been a strong demand for downsizing and thinning of semiconductor products mounted on a printed circuit board for the purpose of reducing the size and weight of devices. In order to realize this object, for example, a TAB mounting technique using a polyimide tape has been developed. However, at present, a resin-sealed semiconductor device in which a semiconductor chip and a lead frame connected to the semiconductor chip are sealed with a resin is widely used as a general device.

  Hereinafter, resin-encapsulated semiconductor devices that are currently widely used will be described. FIG. 8 is a cross-sectional view showing an example of a conventional double-sided sealing type resin-sealed semiconductor device.

  The conventional resin-encapsulated semiconductor device shown in FIG. 8 has a semiconductor chip 103 mounted on a die pad 102 of a lead frame, and an electrode pad (not shown) of the semiconductor chip 103 and an inner lead 104 of the lead frame. They are electrically connected by a thin metal wire 105. The semiconductor chip 103, the die pad 102, the inner lead 104, and the fine metal wire 105 are sealed in the sealing resin 106. The outer leads 101 connected to the inner leads 104 and projecting outward from the sealing resin 106 serve as external electrode terminals connected to a printed wiring board or the like. In this structure, since the sealing resin 106 exists both above the semiconductor chip 103 and below the die pad 102, there is a drawback that the thickness of the entire semiconductor device is increased.

Therefore, a single-side sealed semiconductor device shown in FIGS. 9 and 10 has been considered. 9 is a cross-sectional view of a conventional single-side sealed semiconductor device in a cross section where the inner lead 104 exists, and FIG. 10 is a back view of the conventional single-side sealed semiconductor device. 9 and 10 are the same as those shown in FIG. 8, and therefore, the same numbers are assigned and descriptions thereof are omitted. In the structure of the single-side sealed semiconductor device shown in FIGS. 9 and 10, since the sealing resin 106 exists only on the surface side of the die pad 102 on which the semiconductor chip 103 is mounted, the thickness of the entire semiconductor device. Can be reduced.
Japanese Utility Model Publication No. 54-106776 Japanese Utility Model Publication No. 61-42856 JP-A-6-21304 Japanese Patent Laid-Open No. 6-21315 Japanese Patent No. 2915892

  However, the conventional resin-encapsulated semiconductor device shown in FIGS. 9 and 10 has the following problems.

  That is, in the case of a single-sided sealing type semiconductor device, the sealing resin 106 does not exist below the inner lead 104 as compared with the double-sided sealing type semiconductor device. Since it becomes weak, if a force such as a pulling force acts on the inner lead 104 in the cross section shown in FIG. 8, the inner lead 104 may be easily peeled off from the sealing resin. In particular, by mounting a large number of semiconductor elements (transistors, etc.) in a semiconductor chip and increasing the density, the number of external electrode terminals increases. In addition, the external electrode terminals of the semiconductor device may be peeled off from the printed wiring board or the sealing resin, or the temperature cycle resistance of the semiconductor device after mounting may be reduced, leading to a decrease in reliability.

  The present invention has been made paying attention to the point that stress such as thermal stress applied to a semiconductor device becomes more prominent as it approaches a corner portion of the semiconductor device.

  The first object of the present invention is to increase the number of external electrodes by making the arrangement density of the external electrodes on one side of the semiconductor device different between the central portion and the end portion (that is, the portion close to the corner portion) of the side. The aim is to strengthen the bonding force between the sealing resin and the external electrode.

  The second object of the present invention is to increase the number of external electrodes while increasing the number of external electrodes by making the area of the external electrodes on one side of the semiconductor device different between the central part and the end part of the side. The purpose is to reinforce the bonding force with a mounting substrate such as a wiring board.

  Furthermore, a third object of the present invention is to make it possible to identify the reference position of the semiconductor device by using the shape of the external electrode on each side of the semiconductor device, and to facilitate the attachment to the mounting substrate. is there.

In order to achieve the above object, a resin-encapsulated semiconductor device of the present invention includes a die pad, a lead having a groove, a semiconductor chip mounted on the die pad, and a metal that electrically connects the semiconductor chip and the lead. A thin wire, a groove, a metal thin wire, a semiconductor chip, and a sealing resin that seals the upper surface of the lead and exposes a part of the lower surface of the lead, and the groove is an exposed portion of the lower surface of the lead The lead has a portion where the upper width is wider than the lower width, and the fine metal wire is not on the lead groove and is connected to the portion sealed with the sealing resin Is done.

In the resin-encapsulated semiconductor device of the present invention, it is preferable that a portion other than a part of the lower surface of the lead is encapsulated with an encapsulating resin.

In the resin-encapsulated semiconductor device of the present invention, it is preferable that the upper surface of the lead is larger than the lower surface.

In the resin-encapsulated semiconductor device of the present invention, the groove is preferably formed on the upper surface of the lead.

In the resin-encapsulated semiconductor device of the present invention, the lead has a thin portion on the die pad side of the groove, and the thickness of the thin portion is constituted by the exposed portion on the lower surface of the lead and the upper surface excluding the groove of the lead. It is preferable that the thickness is smaller than the thickness.

In the resin-encapsulated semiconductor device of the present invention, it is preferable that the resin-encapsulated semiconductor device has a resin seal below the thin portion.

In the resin-encapsulated semiconductor device of the present invention, the semiconductor chip is preferably mounted so as to protrude from the die pad.

In the resin-encapsulated semiconductor device of the present invention, it is preferable that the encapsulating resin exposes the lower surface of the die pad.

In the resin-encapsulated semiconductor device of the present invention, it is preferable that the side surface of the encapsulating resin and the tip of the lead are substantially the same surface.

  According to the first semiconductor device of the present invention, in the resin-encapsulated semiconductor device in which the semiconductor chip, the lead, and the connection member are sealed in the sealing resin with the lower surface of the lead exposed, the lower portion of the lead is externally provided. In addition to functioning as an electrode, the arrangement pitch of the external electrodes on the back surface of the semiconductor device is smaller in the center part of the side than in the corner part. By preventing defects such as peeling, it is possible to improve the reliability while increasing the density of the semiconductor elements in the semiconductor device.

  According to the second semiconductor device of the present invention, in the resin-encapsulated semiconductor device in which the semiconductor chip, the lead, and the connection member are sealed in the sealing resin with the lower surface of the lead exposed, the lower portion of the lead is externally provided. In addition to functioning as an electrode, since the area of the lower surface of the external electrode on the back surface of the semiconductor device is larger in the corner portion than in the central portion of the side, the mounting substrate particularly in the corner portion where stress such as thermal stress acts strongly By increasing the bonding strength, it is possible to improve the reliability of the semiconductor device after mounting.

  According to the third semiconductor device of the present invention, in the resin-encapsulated semiconductor device in which the semiconductor chip, the lead, and the connection member are sealed in the sealing resin with the lower surface of the lead exposed, the lower portion of the lead is externally provided. In addition to functioning as an electrode, the shape of at least one external electrode on one side of each side is formed so as to be an identification mark of a reference position of the semiconductor device. The reference position at the time of mounting on the substrate can be easily and quickly identified, and the manufacture of the semiconductor device can be facilitated.

  According to the first lead frame of the present invention, it is possible to provide a lead frame for realizing the effect of the first semiconductor device.

  According to the second lead frame of the present invention, it is possible to provide a lead frame for obtaining the function and effect of the second semiconductor device.

  Hereinafter, embodiments of the resin-encapsulated semiconductor device of the present invention will be described with reference to the drawings.

(First embodiment)
1, 2 and 3 are a sectional view, a top view and a back view for explaining the structure of the resin-encapsulated semiconductor device according to the first embodiment of the present invention, respectively. However, in the plan view of FIG. 2, the sealing resin is seen through in order to facilitate understanding of the internal structure. 1 is a cross-sectional view taken along the line II shown in FIG.

  As shown in FIGS. 1 to 3, the resin-encapsulated semiconductor device according to the present embodiment is mounted on a suspension pad 10 that is a part of a lead frame, a die pad 11 supported by the suspension lead 10, and the die pad 11. The semiconductor chip 12 having a large number of semiconductor elements therein, the lead 13 whose tip is disposed in the vicinity of the semiconductor chip 12, the electrode pad (not shown) on the main surface of the semiconductor chip 12, and the lead 13 are electrically connected. The metal thin wire 14 as a connecting member to be connected in general and the sealing resin 15 for sealing the suspension lead 10, the die pad 11, the semiconductor chip 12, the lead 13, and the metal thin wire 14. The lower part of the lead 13 functions as the external electrode 16. That is, the semiconductor device can be mounted on the mounting substrate by bonding the lower surface of the external electrode 16 and the wiring surface of the mounting substrate such as a printed wiring board with solder or the like.

  Further, as shown in FIG. 1, each suspension lead 10 is formed with a stepped portion 17 for positioning (ie, upsetting) the die pad 11 above the external electrode 16. There is a lower portion 15 a of the sealing resin 15, and an upper portion 15 b of the sealing resin is present above the semiconductor chip 12. That is, the semiconductor chip 12 and the die pad 11 are resin-sealed on both sides.

  In addition, a plurality of, for example, two grooves 19 are formed on the upper surface side of each lead 13, and the contact area between the sealing resin 15 and the lead 13 is increased by the groove 19, and the sealing resin 15 with respect to the lead 13 is increased. The holding power is increased.

  Here, the feature of the semiconductor device according to the present embodiment is that, as shown in FIGS. 2 and 3, the pitch of the external electrodes 16 exposed on the back surface of the semiconductor device is not uniform. That is, the arrangement pitch of the external electrodes 16 is small at the center of each side of the semiconductor device, and the arrangement pitch between the external electrodes 16 is increased toward the end of each side which is a corner portion.

  Therefore, according to the semiconductor device of the present embodiment, the arrangement pitch of the external electrodes 16, that is, the arrangement pitch of the leads 13 is increased in the vicinity of the corner portion of the semiconductor device where stress such as thermal stress acts particularly strongly, that is, in the corner portion. By reducing the arrangement pitch of the leads 13 at the center of each side where the stress acts relatively weakly, the number of external electrodes can be reduced when comparing semiconductor devices of the same size without reducing the reliability of the entire semiconductor device. Can be increased. For example, even if a large stress is applied to the lead 13 at the corner portion, the holding resin has a large holding force with respect to the lead 13 since the presence ratio of the sealing resin to the lead 13 is large at the corner portion. On the other hand, in the central part of each side, the ratio of the sealing resin to each lead 13 becomes small and the holding force of the sealing resin 15 becomes relatively weak. However, in this central part, stress such as thermal stress acting on the lead 13 Is small. Therefore, even if a heat cycle is applied after mounting, the probability that each lead 13 is peeled off from the sealing resin 15 is small, and the probability is almost the same among the leads 13. That is, reliability is improved.

  In the semiconductor device of the present embodiment, as shown in FIG. 1, the step 17 is formed on the suspension lead 10 so that the die pad 11 is positioned above the external electrode 16, so that the sealing is provided below the die pad 11. A lower portion 15a of the stop resin 15 exists. That is, the semiconductor chip 12 and the die pad 11 are resin-sealed on both sides. Further, by reducing the height difference between both sides of the stepped portion 17, there is also an advantage that a semiconductor device that is thin but highly reliable can be obtained.

  However, the present invention is not limited to such an embodiment. As shown in FIG. 11, the external electrode 16 slightly protrudes downward from the lower surface of the sealing resin, or the lower surface of the die pad 11 is exposed. It goes without saying that the same advantages can be obtained even when applied to a single-side sealed semiconductor device of sufficient form.

  Furthermore, since the groove 19 is formed on the upper surface side of the lead 13, the contact area between the lead 13 and the sealing resin 15 is increased, so that the holding force of the sealing resin 15 is increased. Therefore, a more reliable semiconductor device can be obtained.

  Further, in the semiconductor device according to the present embodiment, as shown in FIGS. 1 and 2, two grooves 19 are formed in the tip portion of the lead 13, and a fine metal wire 14 is connected to a region between the grooves 19. Therefore, the distortion caused by the thermal stress at the connection portion of the fine metal wire 14 with the lead 13 is alleviated, and the effect of suppressing problems such as disconnection of the fine metal wire 14 is also obtained.

  In addition, the configuration of the semiconductor device according to the present embodiment is reduced in size by the amount of the external-lead projecting to the side of the sealing resin 15 as compared with the conventional semiconductor device.

  In the present embodiment, the die pad 11 has a smaller area than the semiconductor chip 12 to be mounted, but the present invention is not limited to the structure of the embodiment.

  FIG. 4 is a view showing an example of a lead frame suitable for manufacturing the resin-encapsulated semiconductor device of this embodiment. As shown in the figure, the lead frame according to the present embodiment includes a rectangular outer frame 20, a die pad 11 for mounting a semiconductor chip disposed in a region surrounded by the outer frame 20, A suspension lead 10 for connecting to the frame 20 and a lead 13 extending outward from a position close to the semiconductor chip mounting area and connected to the outer frame 20 are provided. The suspension lead 10 is provided with a stepped portion 17 for upsetting the die pad 11. The leads 13 are arranged so that the arrangement pitch of the leads 13 is smaller at the center of the side than at the corner of the outer frame 20.

  Next, a method for manufacturing the resin-encapsulated semiconductor device according to the present embodiment will be described with reference to FIGS.

  First, after the lead frame shown in FIG. 4 is formed, the back surface of the semiconductor chip 12 is bonded to the die pad 11 with a conductive adhesive. These lead frames are plated with palladium in advance before mounting a semiconductor chip or after a resin sealing step in order to mount the semiconductor device on a printed wiring board. When palladium plating is performed in advance before mounting the semiconductor chip, only the lead 13 may be plated by masking other portions except for the inner lead 13 portion.

  Next, the electrode pads (not shown) of the semiconductor chip 12 and the leads 13 of the lead frame are electrically connected by the fine metal wires 14. At that time, the connecting portion of the fine metal wire 14 on the lead 13 side is the upper surface of the lead 13 between the two groove portions 19 provided in the lead 13.

  Next, the semiconductor chip 12, the die pad 11, the suspension lead 10, the lead 13, and the fine metal wire 14 are sealed with a sealing resin 15 by transfer molding. In this case, the lower part 15a of the sealing resin 15 exists below the die pad 11, and the upper part 15b of the sealing resin exists above the semiconductor chip 12, that is, the semiconductor chip 12 and the die pad 11 are disposed on both sides. Seal on the side. The thickness of the sealing resin 15 is such that the lower surface of the lower portion 15a below the die pad portion 11 is flush with the back surface of the lead portion 13, and the upper portion 15b above the semiconductor chip 12 has a loop height of the metal thin wire 14. It is sealed to a thickness greater than that. In the resin sealing step, it is preferable to seal with good airtightness so that the sealing resin 15 does not enter the back surface side of the lead 13.

  Then, the outer leads of the lead frame are cut and molded so that the side ends of the sealing resin 15 and the tips of the leads are substantially flush with each other.

  Through the steps as described above, a highly reliable semiconductor device in which both surfaces of the semiconductor chip 12 and the die pad 11 are sealed with resin can be manufactured. Compared with the process of forming the conventional semiconductor device shown in FIG. 7, the manufacturing process described above eliminates the need to process the outer leads and is excellent in mass productivity.

  The lead frame used in the above process has the arrangement and shape of the external electrode 16 illustrated in FIG. 2, and seals the soldered portion of the external electrode 16 with the stress applied to the semiconductor device when mounted on the printed wiring board. The resin 15 is prevented from peeling off and coming off.

(Second Embodiment)
Next, a second embodiment will be described. FIG. 5 is a back view of the semiconductor device according to the present embodiment. Also in this embodiment, the cross-sectional structure of the semiconductor device is the same as the structure shown in FIG. 1 in the first embodiment, and thus the cross-sectional view is omitted. Further, since the top structure of the semiconductor device of this embodiment can be easily understood from the back view shown in FIG. 5, the top view is omitted.

  As shown in FIG. 5, in the semiconductor device of the present embodiment, the arrangement pitch of the external electrodes 16 (that is, the leads 13) on each side is small at the center part of each side and large at the corner part as in the first embodiment. The same. However, in the present embodiment, the width of the external electrode 16 is wide and short at the corner portion (side edge portion) of the semiconductor device, whereas the width of the external electrode 16 is narrower and longer toward the center portion. The feature is that it is formed. However, of the four sides of the semiconductor device, the pair of external electrodes 16 at the center is formed short on the lower side in the figure.

  According to the semiconductor device of this embodiment, the arrangement pitch of the external electrodes 16 (leads 13) on each side of the semiconductor device is reduced toward the center, and the width of the external electrodes 16 (leads 13) is reduced toward the center. Thus, the external electrodes 16 can be provided at a higher density than in the first embodiment at the center of each side. Further, the reliability of the semiconductor device can be improved by the same action as in the first embodiment while increasing the density of the semiconductor elements in the semiconductor device. Note that if the leads are elongated at the corners, the leads at the ends of adjacent sides may come into contact with each other or contact with the suspension leads, but there is no such restriction at the center of the sides.

  In the present embodiment, it is preferable that the area of the lower surface of the external electrode 16 that is the lower portion of the lead 13 is increased toward the corner portion. The external electrode 16 is generally connected to a connection terminal of a mounting board such as a printed wiring board by soldering, and at that time, the corner portion of the semiconductor device is also subjected to stress such as thermal stress applied to both connection portions. large. Therefore, by increasing the area of the lower surface of the external electrode 16 toward the corner, the reliability of bonding between the external electrode 16 and the connection terminal of the mounting substrate can be maintained high.

  Furthermore, in the present embodiment, the pair of external electrodes 16 in the central portion is shortened in the lower side in the figure among the four sides of the semiconductor device, and the change state of the shape of the external electrode 16 is made different from the other sides. ing. As described above, it is easier to change the shape of one or a plurality of external electrodes on one side to be different from the other sides by changing the arrangement pitch of the external electrodes. The external electrode having a shape different from that of the other side is useful as a position / direction identification mark when inspecting a semiconductor device and mounting it on a printed wiring board. Thus, the method used as the identification mark is not limited to the one in which the arrangement pitch of the external electrodes is made different between the corner portion and the central portion of the side as in the embodiment, and the arrangement of the external electrodes is equal pitch. Even if it is a thing, an effect can be exhibited.

(Third embodiment)
Next, a third embodiment will be described. FIG. 6 is a back view of the semiconductor device according to the present embodiment. Also in this embodiment, the cross-sectional structure of the semiconductor device is the same as the structure shown in FIG. 1 in the first embodiment, and thus the cross-sectional view is omitted. Further, since the top structure of the semiconductor device of this embodiment can be easily understood from the back view shown in FIG. 6, the top view is omitted.

  As shown in FIG. 6, in the semiconductor device of this embodiment, the arrangement pitch of the external electrodes 16 (that is, the leads 13) on each side is small at the center of each side and large at the corner, which is the same as in the first embodiment. The same. This embodiment is characterized in that the width of the external electrode 16 is wide at the corner portion of the semiconductor device, whereas the width of the external electrode 16 is narrowed toward the center portion. However, the length of each external electrode 16 is common.

  According to the semiconductor device of this embodiment, the arrangement pitch of the external electrodes 16 on each side of the semiconductor device is reduced toward the center, and the width of the lead 13 is reduced toward the center. The leads 13, that is, the external electrodes 16 can be provided at a higher density than in the first embodiment. Further, the reliability of the semiconductor device can be improved by the same operation as that of the first embodiment while increasing the density of the semiconductor elements in the semiconductor device.

  In the present embodiment, since the area of the lower surface of the external electrode 16 is made larger at the corner than at the center of the side, the following effects can be obtained. As described above, in a state where the semiconductor device is mounted on a mounting board such as a printed wiring board, the stress such as the thermal stress applied to the connection portion between the two is larger at the corner portion of the semiconductor device. Therefore, by increasing the area of the lower surface of the external electrode 16 at the corner portion rather than at the central portion of the side, the bonding force between the external electrode and the connection terminal of the mounting substrate in the vicinity of the corner portion can be increased. The reliability of bonding between the electrode 16 and the mounting substrate can be maintained high.

  In particular, as in this embodiment, by increasing the arrangement pitch of the external electrodes 16 at the corners rather than at the center of the side, the area of the lower surface of the external electrode can be easily increased toward the end of the side. It is. That is, in addition to the effect of improving the reliability of the semiconductor device itself, when the semiconductor device is mounted on a mounting board such as a printed wiring board, the reliability of the junction between the external electrode of the semiconductor device and the wiring of the mounting board It is also possible to improve this.

  In general, mounting on a printed wiring board is a mounting method that aligns the printed wiring board with the wiring conductor at the orthogonal center line of the semiconductor device. In this method, the self-alignment effect is achieved by balancing the surface tension of the solder. It is known that position correction is performed. Therefore, since the self-alignment effect is increased by increasing the width of the lower surface of the external electrode, there is an advantage that the mounting of the semiconductor device on the mounting substrate becomes easier.

  Also in this embodiment, as shown by the broken line in FIG. 6, the semiconductor device is mounted on the mounting substrate by making the shape different from other external electrodes, for example, by increasing the length of a part of the external electrodes. The connection relation between the external electrode and the connection terminal on the wiring of the mounting board can be easily and quickly identified.

(Other embodiments)
Next, other embodiments that can be commonly applied to the above-described embodiments will be described.

  In the above embodiments, the lower surface of the pad 11 may be exposed. In this case, if the suspension lead 10 is formed in a straight shape without providing a step portion, the lower surface of the die pad 11 is exposed from the sealing resin. Thus, by setting it as a single-side sealed semiconductor device, the thickness of the whole semiconductor device can be made thinner.

  As shown in FIGS. 7A and 7B, in each of the above embodiments, the wide portion 18 can be provided inside the lead 13. Here, of the two grooves 19 of the lead 13, one groove 19 is in a narrow portion, and the other groove 19 is in an inner wide portion 18. Thus, by processing the width in the thickness direction so that the inner width of the lead 13 in the sealing resin 15 is wider than the outer width, the adhesive force between the external electrode and the sealing resin can be increased. Can be strengthened. In particular, the anchor effect of the wide portion 18 against the force pulling the lead 13 to the side can prevent the lead 13 from coming off and peeling off, and the reliability of the semiconductor device can be improved.

  Further, in the wide portion 18 of the lead, as shown by the broken line in FIG. 7A, the width of the portion that becomes the external electrode 16 that is the lower portion of the lead 13 is narrowed, thereby causing the lead 13 to anchor against the downward tensile force. An effect can be produced, and it is effective in preventing the external electrode 16 from coming off and peeling off against the downward pulling force, and the reliability of the semiconductor device can be improved.

  However, such a stepped shape may be provided not only at the wide portion but also at the narrow portion, or a stepped shape may be provided with respect to a planar straight lead having no wide portion. Good.

  Further, the present invention can be applied to a lead having no groove 19 as shown in FIGS.

  In the second and third embodiments, even when the arrangement pitch of the external electrodes 16 is uniform, the area of the bottom surface of the external electrodes 16 is reduced at the center of the side and increased at the corners, thereby providing a semiconductor. Needless to say, there is an effect of increasing the reliability of bonding between the external electrode 16 of the apparatus and a connection terminal such as a printed wiring board.

  In each of the above embodiments, there are suspension leads and die pads, but the suspension leads and die pads are not necessarily required. Even in a semiconductor device in which no suspension lead or die pad exists, the effects of the present invention can be effectively exhibited.

  Furthermore, in each of the above embodiments, a metal thin wire is used as a connection member that electrically connects the lead and the electrode pad of the semiconductor chip. However, it goes without saying that a bump or the like may be used instead of the metal thin wire. Nor.

1 is a cross-sectional view of a resin-encapsulated semiconductor device according to a first embodiment. It is a top view which permeate | transmits sealing resin and shows the structure of the resin sealing type semiconductor device which concerns on 1st Embodiment. 1 is a back view of a resin-encapsulated semiconductor device according to a first embodiment. It is a top view which shows an example of the structure of the lead frame suitable for manufacture of the resin-encapsulated semiconductor device which concerns on 1st Embodiment. It is a back view of the resin-sealed semiconductor device which concerns on 2nd Embodiment. It is a rear view of the resin-encapsulated semiconductor device according to the third embodiment. It is the top view and perspective view which show the shape of the lead | read | reed in other embodiment. It is sectional drawing of the conventional double-sided sealing type semiconductor device. It is sectional drawing of the conventional single-side sealing type semiconductor device. It is a back view of the conventional single-sided sealing type semiconductor device. It is sectional drawing of the semiconductor device which concerns on the modification of 1st Embodiment.

Explanation of symbols

11 Die pad 12 Semiconductor chip 13 Lead 14 Metal fine wire (connection member)
15 Sealing resin 16 External electrode 17 Stepped portion 18 Wide portion 19 Groove 20 Outer frame

Claims (9)

Die pad,
A lead having a groove;
A semiconductor chip mounted on the die pad;
A fine metal wire for electrically connecting the semiconductor chip and the lead;
With said groove, said thin metal wire, and the semiconductor chip, sealing an upper surface of the lead, One or, a sealing resin for exposing a part of the lower surface of the front Symbol lead,
The groove is located above the exposed portion of the lower surface of the lead ,
The lead has a portion whose upper width is wider than the lower width;
The thin metal wire is a resin-encapsulated semiconductor device connected to a portion of the lead that is not above the groove and sealed with the sealing resin. The resin-encapsulated semiconductor device according to claim 1, wherein a portion other than a part of the lower surface of the lead is sealed with the sealing resin. The resin-encapsulated semiconductor device according to claim 1, wherein an upper surface of the lead is larger than a lower surface. The resin-encapsulated semiconductor device according to claim 1, wherein the groove is formed on an upper surface of the lead. The lead has a thin portion on the die pad side with respect to the groove, and the thickness of the thin portion is thinner than the thickness formed by the exposed portion of the lower surface of the lead and the upper surface of the lead excluding the groove. The resin-encapsulated semiconductor device according to claim 1. The resin-encapsulated semiconductor device according to claim 5, wherein the resin encapsulation is provided below the thin portion. The resin-encapsulated semiconductor device according to claim 1, wherein the semiconductor chip is mounted so as to protrude from the die pad. The resin-sealed semiconductor device according to claim 1, wherein the sealing resin exposes a lower surface of the die pad. The resin-encapsulated semiconductor device according to claim 1, wherein a side surface of the sealing resin and a tip of the lead are substantially the same surface.

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