JP2000332146A - Resin-sealed semiconductor device, circuit material usable therefor and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance the occupancy ratio of semiconductor elements, enable downsizing, and improve the packing density on a circuit board by sealing terminals, the semiconductor elements and bonding wires with sealing members so as to expose the top end of outer terminals of each terminal part to the outside. SOLUTION: A resin-sealed semiconductor device 11 comprises a plurality of terminal parts 12 of inner and outer terminals 13, 14 disposed in two rows at prescribed spacings, a semiconductor element 15 located in approximately the center of a space where the terminal parts 12 are disposed, bonding wires 17 connecting terminals 15a of the semiconductor element 15 to the terminal parts 12, and sealing members 18 for sealing the terminal parts 12, the bonding wires 17 and the semiconductor element 15. Each terminal part 12 is electrically disposed independently being approximately flush with the inner terminal 13 facing the same plane. The outer terminal 14 is composed of a buried part 14a located in the seal member 18 and a top end part 14b exposed to protrude from the back side of the resin-sealed semiconductor device 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device having a semiconductor element mounted thereon, a circuit member used for the semiconductor device, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have been typified by LSI ASICs due to advances in high integration and miniaturization technologies, and the trend toward higher performance and lighter, thinner and smaller electric appliances (current trend).
It is becoming more and more highly integrated and highly functional.

Accordingly, the development trend of the sealing type semiconductor device using the lead frame has been
OJ (Small Outline J-Leaded
Package or QFP (Quad Flat P)
through a surface mount type package such as a TSOP (Thin Small Outline).
LOC (Lea) for the purpose of package miniaturization with the main axis of thinning due to the development of Package) and improvement of chip storage efficiency by making the package three-dimensional.
d On Chip).

[0004] However, resin-encapsulated semiconductor device packages are required to have higher integration, higher functionality, and more pins, thinner, and smaller. Due to the arrangement of leads on the outer peripheral portion of the element, a limit has been seen in miniaturization of the package.

[0005]

Therefore, in recent years, a BGA (Ball Grid Array) type resin-sealed semiconductor device that can be mounted on a circuit board by solder balls arranged in an area array has been developed. .

However, such a BGA-type resin-encapsulated semiconductor device has excellent reliability when mounted on a circuit board by using a solder ball, but is expensive in a solder ball mounting process and a mask. And the cost of the solder ball itself is high, which hinders a reduction in the manufacturing cost of the semiconductor device.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has a high occupancy rate of a semiconductor element, can be reduced in size, and can improve a mounting density on a circuit board.
Furthermore, a resin-encapsulated semiconductor device capable of coping with the increase in the number of pins while not having to mount a solder ball, a circuit member used in the semiconductor device, and a method of manufacturing the circuit member and the semiconductor device The purpose is to provide.

[0008]

In order to achieve the above object, a resin-encapsulated semiconductor device according to the present invention comprises a plurality of terminal portions integrally having a thin-film internal terminal and a columnar external terminal. Are arranged electrically independently so that the internal terminal faces are oriented substantially in the same direction in the same direction, and the circuit forming surface side is located substantially at the center of the space in which the terminal portion is provided. The semiconductor elements are electrically independent of each other so as to face the same direction as the surface, and the internal terminals of each terminal and the terminals of the semiconductor element are electrically connected by bonding wires. The terminal part, the semiconductor element, and the bonding wire were sealed by a sealing member so that the side was exposed to the outside.

Further, the resin-encapsulated semiconductor device of the present invention comprises:
An electrically insulating resin layer was provided on the surface opposite to the circuit forming surface of the semiconductor element, and the resin layer was exposed on the back surface.

A circuit member according to the present invention comprises a metal flat base and a plurality of metal columnar protrusions arranged in a predetermined pattern on one surface of the base outside the semiconductor element mounting area. And a conductive thin film provided on the upper end surface of the columnar protrusion,
It was configured to be provided with.

Further, the circuit member of the present invention is configured such that an electrically insulating adhesive member is provided on at least a part of the semiconductor element mounting area of the base.

According to the method of manufacturing a circuit member of the present invention, there are provided a pattern forming step of forming a resist pattern on a metal substrate, a thin film forming step of forming a conductive thin film on an exposed surface of the substrate, and peeling of the resist pattern. An etching step of removing the substrate and half-etching the substrate using the thin film as a mask.

In the method of manufacturing a resin-encapsulated semiconductor device according to the present invention, the semiconductor device is mounted on the above-mentioned circuit member by electrically insulating and fixing the surface opposite to the circuit forming surface of the semiconductor element to the semiconductor element mounting area. A semiconductor element mounting step, a wire bonding step of electrically connecting a conductive thin film of a circuit member and a terminal of the semiconductor element with a bonding wire, and a sealing step of sealing the thin film, the semiconductor element and the bonding wire with a resin material. A stopping step, an etching step of dissolving and removing the base and the columnar protrusion of the circuit member, and filling the recess formed in a state where the columnar protrusion is dissolved and removed and the thin film is exposed with a conductive material, And a filling step of forming a terminal portion in which the internal terminal made of a thin film and the columnar external terminal made of the conductive material are integrated.

Further, the method of manufacturing a resin-encapsulated semiconductor device according to the present invention includes a reflow step in which a solder paste is used as a conductive material in the filling step, and the solder paste filled in the recess is heated to be solidified. It was configured to have.

Further, in the method of manufacturing a resin-encapsulated semiconductor device according to the present invention, a circuit member provided with a plurality of combinations of a semiconductor element mounting region and a plurality of thin films corresponding to the region is used as the circuit member. After the filling step, the semiconductor device is provided with a separating step for separating each semiconductor element.

Further, in the method of manufacturing a resin-sealed semiconductor device according to the present invention, the separation step may be a punching step using a die or a dicing step using a dicer. did.

According to the present invention, the resin-encapsulated semiconductor device can be mounted on the circuit board by using the distal end of the external terminal exposed to the outside. This is lower than mounting using conventional solder balls. In addition, since the semiconductor element mounting area of the circuit member is formed by half-etching the substrate, the semiconductor element can be disposed substantially at the center of the space in which the terminal portion is disposed. The length of the bonding wire for electrically connecting the terminal and the internal terminal is reduced.

[0018]

Embodiments of the present invention will be described below with reference to the drawings.

Circuit Member FIG. 1 is a plan view showing an embodiment of the circuit member of the present invention, and FIG. 2 is a longitudinal sectional view taken along line AA of the circuit member shown in FIG. 1 and 2, a circuit member 1 according to the present invention includes a flat base 2 and a plurality of pillars arranged in a predetermined pattern outside a semiconductor element mounting region 3 on one surface of the base 2. The projection includes a convex portion and a conductive thin film provided on an upper end surface of the columnar convex portion.

The base 2 and the columnar projection 4 are both made of metal.
The columnar protrusions 4 are formed integrally with the base 2. Base 2
Can be appropriately set according to the material used, and can be, for example, about 50 to 150 μm.
In the illustrated example, the shape of the columnar protrusion 4 is a rectangular prism having a rectangular cross-sectional shape, but is not limited to this.
The height of such columnar protrusions 4 can be set in accordance with the height of the external terminals of the resin-encapsulated semiconductor device to be manufactured, and is set, for example, in the range of 50 to 150 μm. A rectangular semiconductor element mounting region 3 (a region surrounded by a chain line in FIG. 1) is provided so as to surround both sides of the plurality of columnar protrusions 4.

As the metal material forming the base 2 and the columnar protrusions 4, a material which can be more easily etched than a material described later for forming the conductive thin film 5 can be selected. (Ni 42% Fe alloy), copper,
Copper alloys and the like can be mentioned.

The conductive thin film 5 serves as an internal terminal of the resin-encapsulated semiconductor device, and is a thin film made of a noble metal alone such as Ag, Pt, or Au, or a laminated thin film made of a combination of these noble metals. Furthermore, a laminated thin film of the above noble metal and a metal such as Ni (the outermost layer is a noble metal layer)
It is. The thickness of such a thin film 5 can be set in the range of 0.5 to 10 μm.

In such a circuit member 1, when a semiconductor element is mounted on the semiconductor element mounting area 3, this semiconductor element is located substantially at the center of the space in which the columnar projections 4 are provided.

As shown in FIG. 3, the circuit member 1 of the present invention may have an electrically insulating adhesive member 6 provided on at least a part of the semiconductor element mounting area 3 of the base 2. The adhesive member 6 is not particularly limited, and includes an electrically insulating base film provided with an adhesive layer on both surfaces thereof, for example, RXF ((UPILEX (electrically insulating base film manufactured by Ube Industries, Ltd.)) on both surfaces. A double-sided adhesive tape such as UXIW (manufactured by Hamakawa Paper Co., Ltd.) having a layer of an adhesive (Hamakawa Paper Co., Ltd.) can be used.

The circuit member of the present invention has a plurality of the above-described circuit members connected in series, that is, a plurality of combinations of a semiconductor element mounting area 3 and a plurality of thin films 5 corresponding to the area 3. It may be a circuit member. FIG.
Is a cross-sectional view showing such a circuit member. The circuit member 1 'shown in FIG. 4 is one in which five circuit members 1 shown in FIGS. 1 and 2 are continuously provided in a direction perpendicular to the arrangement direction of the columnar protrusions 4 (the left-right direction in the drawing). . That is, the circuit member 1 ′ includes a flat base 2, five semiconductor element mounting areas 3 set at a predetermined pitch P on one surface of the base 2, and each semiconductor element mounting area 3. Correspondingly, a plurality of columnar protrusions 4 arranged in a predetermined pattern on the outside, and a conductive thin film 5 provided on an upper end surface 4a of the columnar protrusion 4
And Further, an outer frame member 7 is provided at an end of the base 2.
Are formed with the conductive thin film 5 provided on the upper end surface 7a. Note that the number of terminals, the terminal arrangement, and the like in the above-described circuit member 1 and the circuit member 1 'are merely examples, and the circuit member of the present invention is not limited thereto.

The resin-sealed semiconductor device Figure 5 is a plan view showing an embodiment of a resin-sealed semiconductor device of the present invention using a circuit member of the invention shown in Figures 1 and 2, FIG. 6 FIG. FIG. 6 is a vertical sectional view of the resin-sealed semiconductor device shown in FIG. 5 taken along line BB. In order to make the configuration of the resin-encapsulated semiconductor device easy to understand, the sealing member is omitted in FIG. 5 and its outline is indicated by a virtual line (two-dot chain line).

Referring to FIGS. 5 and 6, a resin-sealed semiconductor device 11 according to the present invention includes a plurality of terminal portions 12 arranged in two rows at a predetermined interval, and a substantially central portion of a space in which the terminal portions 12 are arranged. , A bonding wire 17 for connecting the terminal 15 a of the semiconductor element 15 to the terminal portion 12, and a bonding wire 17 for connecting the terminal portion 12 and the bonding wire 17.
And a sealing member 18 for sealing the semiconductor element 15.

The terminal portions 12 integrally have a thin film-shaped internal terminal 13 and a columnar external terminal 14, and each terminal portion 12 is substantially coplanar with the surface of the internal terminal 13 facing in the same direction. It is electrically independent so as to be located.
The internal terminal 13 is a thin film made of a noble metal such as Ag, Pt, or Au alone, a laminated thin film made of a combination of these noble metals, or a laminated thin film of the above noble metal and a metal such as Ni (the outermost layer is made of a noble metal. And a thickness of about 0.5 to 10 μm. Also, the external terminal 14
Is composed of a buried portion 14a located in the sealing member 18 and a tip portion 14b exposed so as to protrude from the back surface of the resin-sealed semiconductor device 11. In the illustrated example, the buried portion 14a is a rectangular prism having a rectangular cross section, and the tip portion 14b projects in a long roof dome shape. It is preferable that the amount of protrusion of the tip portion 14b is about 50 to 150 μm. Such external terminals 14 are formed of a conductive metal material such as solder or copper paste, and solder is particularly preferable.

The semiconductor element 15 includes the plurality of terminal portions 1 described above.
The circuit forming surface 2 is arranged electrically substantially in the center of the space where the 2 is provided, so that the circuit forming surface side faces the same direction as the internal terminal 13 surface. Then, the internal terminal 13 of each terminal portion 12 and the terminal 15 a of the semiconductor element 15 are connected to the bonding wire 17.
Are electrically connected to each other. In the illustrated example, the electrically insulating resin layer 1 is provided on the side opposite to the circuit forming surface of the semiconductor element 15.
The resin layer 16 is exposed on the back surface of the resin-encapsulated semiconductor device 11. The sealing member 18 can be formed using a known resin material used for a resin-sealed semiconductor device.

The resin-encapsulated semiconductor device 11 is a BGA (Ball Grid Array) type semiconductor device because the tip 14b of the external terminal 14 is exposed to the outside. And this external terminal 1
The height of the semiconductor device 11 when it is mounted on a circuit board using the tip 14b of No. 4 is lower than that of a conventional mounting using solder balls. This is because the amount of protrusion of the tip portion 14b (about 50 to 150 μm) depends on the diameter of the solder ball (30 μm).
(About 0 to 750 μm). Also,
A semiconductor element 15 is provided substantially at the center of the space in which the terminal portion 12 is provided.
Are provided, the internal terminal 13 and the semiconductor element 15
Of the internal terminal 13a.
The length of the bonding wire 17 for electrically connecting the terminal 15a to the terminal 15a is short. The number of terminals, terminal arrangement, and the like in the above-described resin-sealed semiconductor device 11 are examples, and the resin-sealed semiconductor device of the present invention is not limited to this.

The method of manufacturing a circuit member Next, a method for manufacturing a circuit member of the present invention.

FIG. 7 is a process chart showing one embodiment of a method for manufacturing a circuit member of the present invention using the circuit member 1 'of the present invention shown in FIG. 4 as an example. Each step is shown in a longitudinal sectional view of the circuit member corresponding to FIG. 4 described above.

In FIG. 7, first, as a pattern forming step, a photosensitive resist having plating resistance is applied to the surface of a metal substrate 21 and dried to form a resist layer 22.
A film 23 having plating resistance is fixed to the back surface of the substrate 21 (FIG. 7A). Next, the resist layer 22 is exposed through a desired photomask and then developed to form a resist pattern 22 '(FIG. 7B). As the substrate 21, a material that can be more easily etched than a thin film formed in the next thin film forming step can be selected. For example, a metal substrate (thickness: 42 alloy (Ni 41% Fe alloy), copper, copper alloy, or the like) 100-250 μm) can be used.
As the substrate 21, it is preferable to use a substrate which has been subjected to a cleaning treatment after degreasing both surfaces. Further, as a photosensitive resist having plating resistance, for example, D-manufactured by Asahi Kasei Corporation
FR Sunfort AQ and the like can be mentioned, and as the film 23 having plating resistance, for example, a film such as Riba Alpha (thermal release film) manufactured by Nitto Denko Corporation can be mentioned.

Next, in the thin film forming step, using the resist pattern 22 'and the film 23 as a mask,
The conductive thin film 5 is formed on the exposed surface of the substrate 21 (FIG. 7).
(C)). The thin film 5 is usually formed by electroplating, and is made of a noble metal such as Ag, Pt, or Au alone.
Alternatively, it is a laminated thin film composed of a combination of these noble metals, or a laminated thin film of the above-mentioned noble metal and a metal such as Ni (the outermost layer is a noble metal layer). The thickness of such a thin film 5 can be set in the range of 0.5 to 10 μm.

Next, in the etching step, the substrate 21 exposed by peeling and removing the resist pattern 22 ′ is separated from the thin film 5 and the film 23 having plating resistance.
Etching is performed with a corrosive solution using as a mask (FIG. 7
(D)). The corrosive liquid can be, for example, spray-etched from both surfaces of the substrate 21 using an aqueous solution of ferric chloride, ammonium persulfate, or the like depending on the material of the substrate 21. The amount of etching in this etching step determines the height of the columnar convex portion 4 of the circuit member 1 '.
The etching amount does not penetrate in the thickness direction of the substrate 21,
So-called half etching is performed. Next, the circuit member 1 ′ as shown in FIG. 4 is obtained by peeling the film 23 having plating resistance.

Next, a method for manufacturing the resin-sealed semiconductor device of the present invention will be described. FIG. 8 is a process chart showing one embodiment of a method for manufacturing the resin-sealed semiconductor device of the present invention shown in FIGS. 5 and 6 using the circuit member 1 'of the present invention shown in FIG. . Each step is shown in a vertical sectional view corresponding to FIG. 4 described above.

In FIG. 8, first, an electrically insulating adhesive member 6 (for example, a tape having an adhesive layer on both sides of an electrically insulating base film) is provided on each semiconductor element mounting area 3 of the circuit member 1 '. The semiconductor element 15 is mounted via the process (FIG. 8A).

Next, the terminal 15 of the mounted semiconductor element 15
a and the conductive thin film 5 of the circuit member 1 'are electrically connected by the bonding wires 17 (FIG. 8 (B) wire bonding step).

Next, the thin film 5 of the circuit member 1 ′, the semiconductor element 15 and the bonding wires 17 are
(FIG. 8 (C) sealing step).

Next, the base 2 and the columnar projections 4 are dissolved and removed with a corrosive liquid from the back side of the circuit member 1 'not covered with the resin material 18 (FIG. 8D etching step).
The thin film 5 is exposed in a concave portion that appears after the columnar convex portion 4 is dissolved and removed by this etching process.

A conductive material is filled in the concave portions appearing in the above etching step to form columnar external terminals 14 (FIG. 8 (E) filling step). The filling of the conductive material, for example,
It can be performed by a screen printing method using a solder paste as a conductive material. In this case, a reflow step of heating to solidify the solder paste filled in the concave portion can be added. The external terminal 14 thus formed has a columnar shape and has a buried portion 14a located in a resin material (sealing member) 18 and a tip portion 14b exposed so as to protrude to the outside. Is integrated with the thin film 5 of the circuit member 1 ′, and this thin film 5 becomes the internal terminal 13. Thereby, the thin-film internal terminal 13
And a terminal portion 12 integrally formed with the external terminal 14 having a columnar shape.

When a circuit member 1 (a combination of a semiconductor element mounting area 3 and a plurality of thin films 5 corresponding to the area 3 is provided) as shown in FIGS. When the external terminals 14 are formed by the filling step, the resin-sealed semiconductor device 11 of the present invention shown in FIGS. 5 and 6 is obtained.

On the other hand, when the above-described circuit member 1 '(a circuit member having a plurality of combinations of the semiconductor element mounting region 3 and the plurality of thin films 5 corresponding to the region 3) is used, By separating each semiconductor element, the resin-sealed semiconductor device 11 of the present invention shown in FIGS. 5 and 6 is obtained. In such a separation step, the semiconductor device is separated into individual semiconductor devices at the boundary of the region corresponding to each semiconductor element (the part indicated by an arrow in FIG. 8E), and the outer frame member 7 is removed. This separation step can be performed by punching using a mold or dicing using a dicer.

[0044]

Next, the present invention will be described in more detail with reference to specific examples.

(Preparation of Circuit Member) A copper alloy plate having a thickness of 0.125 mm (made by Furukawa Electric Co., Ltd.) was used as a metal substrate.
FTEC64T-1 / 2H) was prepared, and degreased and washed. Next, a plating-resistant UV-curable resist film (Sunfort AQ, thickness 25 μm, manufactured by Asahi Kasei Corporation) is attached to the front side of the copper alloy sheet, and the plating-resistant A resin film (Riba Alpha manufactured by Nitto Denko Corporation) was attached.
Next, the resist film on the front side was exposed through a predetermined photomask, and then developed to form a resist pattern. (The above is the pattern forming process)

Next, using the resist pattern on the front surface of the copper alloy plate and the resin film on the back surface as a mask, a 1 μm Pd plating layer and a 5 μm Ni plating layer were formed on the exposed surface of the copper alloy plate.
A conductive thin film having a three-layer structure of a 1 μm Pd plating layer was formed. (The above is the thin film forming process)

Next, the resist pattern on the surface side was peeled off and the copper alloy plate was etched using the thin film and the resin film having plating resistance as a mask. In this etching, ammonium persulfate was used as a corrosive solution, and the amount of etching was half etching in which the etching depth of the copper alloy plate exposed between the conductive thin films was 100 μm. (The above is the etching process)

Next, heating on a hot plate (150
(° C., 1 minute) to peel off the resin film on the back side.
As a result, a circuit member was obtained. This circuit member is provided with a plurality of columnar projections having a height of 100 μm and a conductive thin film having a thickness of 7 μm provided on the upper end surface of the columnar projections.

(Preparation of Semiconductor Device) The semiconductor element (about 0 thickness) was placed on the semiconductor element mounting area of the circuit member prepared as described above via an electrically insulating die attach film (Asosorbon, manufactured by Nippon Gore-Tex Co., Ltd.). .25 mm), and the semiconductor element was mounted on the opposite side of the circuit formation surface.
(The above is the semiconductor element mounting process)

Next, the conductive thin film of the circuit member and the terminal of the mounted semiconductor element (0.25 mm in thickness) were connected by a gold wire (FA-30 manufactured by Tanaka Electronics Industry Co., Ltd.). In this case, the step between the thin film of the circuit member and the terminal of the semiconductor element was 185 μm. (The above is the wire bonding process)

Next, the conductive thin film of the circuit member, the semiconductor element, and the gold wire are made of a resin material (MP-74 manufactured by Nitto Denko Corporation).
00). (The above is the sealing process)

Thereafter, the circuit member was etched with ammonium persulfate from the back side of the circuit member not covered with the resin material. This etching was performed until the column-shaped convex portions of the circuit member were dissolved and removed to expose the conductive thin film. (The above is the etching process)

Next, a solder paste is filled into the recesses formed in the etching step by screen printing, and heated (2).
(30 ° C., 2 minutes) to form an external terminal by solidification. The external terminal has a columnar buried portion (height: 100 μm) buried in the sealing member made of the above resin material and integrated with the conductive thin film (internal terminal).
It had a tip protruding 0 μm. (The above is the filling process)

Next, individual semiconductor devices were obtained by cutting at desired positions with a dicer. Each of the resin-sealed semiconductor devices manufactured in this manner had 16 external pins, external dimensions of 5 mm square and a thickness of 0.5 mm, and were extremely small and thin.

This resin-encapsulated semiconductor device was mounted on a circuit board without using solder balls, and subjected to a temperature cycle test (a temperature change from −45 ° C. to + 125 ° C. was repeated in a 60-minute cycle). No problems occurred after 500 cycles.

[0056]

As described in detail above, according to the present invention, the occupancy of the semiconductor element is increased, the size of the semiconductor element can be reduced, and the mounting density on the circuit board can be improved. Can be performed using the front end side of the external terminal exposed to the outside of the resin-encapsulated semiconductor device, so that a BGA (Ball Grid A) using a conventional solder ball can be used.
The same mounting workability as that of the (rray) type semiconductor device can be obtained, and the height of the mounted semiconductor device can be reduced as compared with the case where solder balls are used. Further, since a solder ball mounting device, a mounting mask, and a solder ball are not required, manufacturing costs can be reduced. Further, the length of the bonding wire for electrically connecting the terminal of the semiconductor element and the internal terminal is shorter than that of a conventional semiconductor device. By using the circuit member of the present invention, a resin-sealed semiconductor device having the above-described effects can be easily manufactured. Can be easily produced by the production method described above.

[Brief description of the drawings]

FIG. 1 is a plan view showing one embodiment of a circuit member of the present invention.

FIG. 2 is a longitudinal sectional view of the circuit member shown in FIG. 1 taken along line AA.

FIG. 3 is a longitudinal sectional view showing another embodiment of the circuit member of the present invention.

FIG. 4 is a longitudinal sectional view showing another embodiment of the circuit member of the present invention.

FIG. 5 is a plan view showing one embodiment of the resin-sealed semiconductor device of the present invention using the circuit member of the present invention shown in FIG. 1;

FIG. 6 is a cross-sectional view of the resin-sealed semiconductor device shown in FIG.
It is a longitudinal cross-sectional view in a line.

FIG. 7 is a process chart showing one embodiment of a method for manufacturing a circuit member of the present invention.

FIG. 8 is a process chart showing one embodiment of a method for manufacturing a resin-sealed semiconductor device of the present invention.

[Explanation of symbols]

 1, 1 '... circuit member 2 ... base 3 ... semiconductor element mounting area 4 ... columnar convex part 5 ... conductive thin film 6 ... electrically insulating adhesive member 11 ... resin-sealed semiconductor device 12 ... terminal part 13 ... inside Terminal 14: External terminal 15: Semiconductor element 17: Bonding wire 18: Sealing member 21: Metal substrate 22 ': Resist pattern

Claims (10)

[Claims] A plurality of terminal portions integrally having a thin film-shaped internal terminal and a columnar external terminal are electrically independent so that the internal terminal faces face in the same direction and are located on substantially one plane. The semiconductor elements are electrically independently arranged so that the circuit forming surface side faces the same direction as the internal terminal surface at substantially the center of the space in which the terminal portions are disposed. The terminal, the semiconductor element, and the bonding wire are sealed by a sealing member so that the terminal and the terminal of the semiconductor element are electrically connected by a bonding wire, and the distal end side of the external terminal of each terminal is exposed to the outside. A resin-sealed semiconductor device. 2. The resin according to claim 1, further comprising an electrically insulating resin layer on a surface of the semiconductor element opposite to a circuit forming surface, wherein the resin layer is exposed on a back surface side. Sealed semiconductor device. 3. A metal plate-shaped base, a plurality of metal columnar protrusions arranged in a predetermined pattern outside a semiconductor element mounting region on one surface of the base, and the columnar protrusions. A conductive thin film provided on an upper end surface of the portion. 4. The circuit member according to claim 3, wherein an electrically insulating adhesive member is provided on at least a part of the semiconductor element mounting region of the base. 5. A pattern forming step of forming a resist pattern on a metal substrate, a thin film forming step of forming a conductive thin film on an exposed surface of the substrate, and the resist pattern is peeled off and the thin film is used as a mask. An etching step of half-etching the substrate. 6. A semiconductor element mounting device which is mounted by electrically insulating and fixing a surface opposite to a circuit forming surface of a semiconductor device to a semiconductor element mounting region of the circuit member according to claim 3 or 4. A wire bonding step of electrically connecting the conductive thin film of the circuit member and the terminal of the semiconductor element with a bonding wire, a sealing step of sealing the thin film, the semiconductor element and the bonding wire with a resin material, An etching step of dissolving and removing the base and the columnar protrusions of the circuit member; and filling a recess formed in a state where the columnar protrusions are dissolved and removed and exposing the thin film with a conductive material to form an inner portion formed of the thin film. A filling step of forming a terminal portion in which the terminal and the columnar external terminal made of the conductive material are integrated. Method. 7. The resin according to claim 6, wherein the filling step uses a solder paste as a conductive material, and includes a reflow step of heating the solder paste filled in the concave portion so as to solidify the solder paste. A method for manufacturing a sealed semiconductor device. 8. A separating step of using a circuit member having a plurality of combinations of a semiconductor element mounting area and a plurality of thin films corresponding to the area as a circuit member, and separating the semiconductor element for each semiconductor element after the filling step. The method of manufacturing a resin-encapsulated semiconductor device according to claim 6, further comprising: 9. The method according to claim 8, wherein the separating step is a punching step using a mold. 10. The method for manufacturing a resin-encapsulated semiconductor device according to claim 8, wherein the separation step is a dicing step using a dicer.