JP2007157846A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with no polishing after resin coating required, capable of forming an effective electrode terminal at the lower part of a semiconductor element depending on cases, with a relatively simple manufacturing method. <P>SOLUTION: Front and rear side wiring patterns 26 and 27 are formed on both sides of a lead frame material 23, using first and second resist films 24 and 25, with anti-etching plating 20 and 21 applied on the exposed portions. The second resist film 25 on the rear surface side is removed for half-etching, and a recess 29 that has been half-etched is injected with a resin 19. The front surface side of the lead frame material 23 is etched with the anti-etching plating 20 as a resist film, so that a lead frame base 12 is formed comprising joint terminals 14 and 14a and a lead 17. A semiconductor element 13 is mounted on the lead frame base 12, and the entire is resin-sealed after wire bonding. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a method for manufacturing a CSP (chip-sized package) semiconductor device, and more particularly, to a method for manufacturing a semiconductor device in which external connection terminals protrude to the back side of a sealing resin.

From the demand for miniaturization of semiconductor devices, tape-CSP type semiconductor devices using polyimide resin tape and solder balls, and BCC (bump chip carrier) type semiconductor devices using base metal are known. However, in a tape-CSP type semiconductor device, there is a problem that a polyimide resin tape is expensive and is not suitable for strip conveyance due to its softness. Further, in the BCC type semiconductor device, if the base metal is removed by etching, it becomes a solid piece, so that there is a problem that the mold surface needs to be fixed with an adhesive tape, which increases the cost.
Therefore, a method of manufacturing a semiconductor device as described in Patent Document 1 and Patent Document 2 has been proposed, and a lead and electrode pads connected to a semiconductor chip are formed by etching one lead frame material. .

JP 2001-24135 A JP 2003-309242 A

However, the semiconductor device manufactured according to Patent Document 1 has a low degree of freedom of wiring for wire bonding to the upper part of the electrode terminal. Therefore, when the number of electrode terminals is increased, bonding wires (wiring) interfere with each other, and it is difficult to avoid. There is a problem that sometimes. In addition, there is a problem that wire bonding cannot be performed on the electrode terminals arranged below the semiconductor element.
Further, in Patent Document 2, after the first etching process, the half-etched portion is fixed once, and then the mounting surface side is etched. Therefore, polishing is necessary after coating the resin. There is a problem that it takes.

The present invention has been made in view of such circumstances, and polishing after resin coating is not particularly necessary, and the manufacturing process is relatively simple, and in some cases, a semiconductor capable of forming an effective electrode terminal below the semiconductor element. An object is to provide a method for manufacturing a device.

A method of manufacturing a semiconductor device according to the first invention that meets the above-described object is a method of manufacturing a semiconductor device having a plurality of terminal pads on the back surface side and having a semiconductor element sealed with resin inside.
After the front and back surfaces of the lead frame material are coated with the first and second resist films, respectively, the first and second resist films are exposed and developed, respectively, and the surface side of the lead frame material Then, a front side wiring pattern in which a bonding terminal of the bonding wire from the semiconductor element and a lead bonded thereto are exposed, and a back side wiring pattern in which the terminal pad is exposed on the back side of the lead frame material are formed. The first step;
A second step of performing etching-resistant plating on the front and back exposed portions of the lead frame material in which the front-side wiring pattern and the back-side wiring pattern are formed by the first and second resist films;
A third step of removing the second resist film on the back surface side and performing half etching on the back surface side of the lead frame material using the etching-resistant plating as a resist film;
A fourth step of removing the first resist film on the front surface side and injecting a resin into the hollow portion half-etched on the back surface side in the third step;
A fifth step of forming a lead frame base including the joint terminals and the leads by performing an etching process on the surface side of the lead frame material using the etching-resistant plating as a resist film;
A sixth step in which the semiconductor element is mounted on the lead frame base formed in the fifth step, and wire bonding is performed between the bonding terminals;
And a seventh step of sealing the lead frame base, the semiconductor element, and the bonding wire with the terminal pad exposed on the back surface.

A method for manufacturing a semiconductor device according to a second aspect of the present invention is a method for manufacturing a semiconductor device having a plurality of terminal pads on the back side and having a semiconductor element sealed with resin inside.
After the front and back surfaces of the lead frame material are coated with the first and second resist films, respectively, the first and second resist films are exposed and developed, respectively, and the surface side of the lead frame material Then, a front side wiring pattern in which a bonding terminal of the bonding wire from the semiconductor element and a lead bonded thereto are exposed, and a back side wiring pattern in which the terminal pad is exposed on the back side of the lead frame material are formed. The first step;
A second step of performing etching-resistant plating on the front and back exposed portions of the lead frame material in which the front-side wiring pattern and the back-side wiring pattern are formed by the first and second resist films;
After removing the first and second resist films on the front surface side and the back surface side, the front surface side is further covered with a third resist film, and the back surface of the lead frame material using the etching-resistant plating on the back surface side as a resist film A third step of performing half etching on the side;
A fourth step of removing the third resist film on the front surface side and injecting a resin into the hollow portion half-etched on the back surface side in the third step;
A fifth step of forming a lead frame base including the joint terminals and the leads by performing an etching process on the surface side of the lead frame material using the etching-resistant plating as a resist film;
A sixth step in which the semiconductor element is mounted on the lead frame base formed in the fifth step, and wire bonding is performed between the bonding terminals;
And a seventh step of sealing the lead frame base, the semiconductor element, and the bonding wire with the terminal pad exposed on the back surface.

A method for manufacturing a semiconductor device according to a third aspect of the present invention is a method for manufacturing a semiconductor device having a plurality of terminal pads on the back side and having a semiconductor element sealed with resin inside.
After the front and back surfaces of the lead frame material are coated with the first and second resist films, respectively, the first and second resist films are exposed and developed, respectively, and the surface side of the lead frame material A first step of forming a front-side wiring pattern exposing a bonding terminal of a bonding wire from the semiconductor element and a lead connected thereto, and a back-side wiring pattern for hiding the terminal pad on the back side of the lead frame material When,
A second step in which the first resist film of the lead frame material is covered with a mask to cover the entire surface (the entire front surface), and further, half etching is performed to remove a portion excluding the terminal pads on the back surface side;
A third step of injecting resin into a half-etched portion on the back side of the lead frame material;
The second resist film on the back side of the lead frame material is peeled off, and the mask on the front side is removed to expose the front side wiring pattern formed by the first resist film. A fourth step of performing an etching plating process;
A fifth step of removing the first resist film and performing an etching process to form a lead frame base including the joining terminals and the leads;
A sixth step in which the semiconductor element is mounted on the lead frame base formed in the fifth step, and wire bonding is performed between the bonding terminals;
And a seventh step of sealing the lead frame base, the semiconductor element, and the bonding wire with the terminal pad exposed on the back surface.

In the method for manufacturing a semiconductor device according to the first to third inventions, the surface of the terminal pad exposed on the back surface side is subjected to build-up processing by thick plating or solder, and the terminal pad is exposed from the back surface of the semiconductor device. It is preferable that the protruding portion or a part of the resin on the back surface of the manufactured semiconductor device is removed and the terminal pad protrudes from the back surface of the semiconductor device. As a result, the wiring of the semiconductor device is surely facilitated.
In the method for manufacturing a semiconductor device according to the first to third inventions, the etching-resistant plating may be noble metal plating (for example, Au, Ag, Pt, Pd). An undercoat such as Ni or Ag (except when the noble metal plating is Ag) may be applied to the lower layer of the plating.

In the method for manufacturing a semiconductor device according to the first to third inventions, it is more preferable that the manufactured semiconductor device is provided with the terminal pads directly below the semiconductor element. The present invention can be applied to a method of manufacturing a semiconductor device of a type in which terminal pads are provided only around the semiconductor elements in addition to the type in which terminal pads are provided immediately below the semiconductor elements. .

In the method of manufacturing a semiconductor device according to the present invention, a single lead frame material is processed in fewer steps than in the conventional process, a lead frame base is formed, a semiconductor element is mounted thereon, and wire bonding is performed. After that, since the resin is sealed, a more compact and inexpensive semiconductor device can be provided.
Further, the position of the bonding terminal of the bonding wire formed on the front surface side of the lead frame base and the position of the terminal pad formed on the back surface side can be freely designed as long as there is no problem with the lead (inner lead) wiring. Therefore, for example, a terminal pad can be provided immediately below the semiconductor element, and thereby, a smaller and more multi-terminal pad semiconductor device can be provided.
Furthermore, the terminal pad can be thickly plated or soldered, and the terminal pad standoff can be increased by removing the resin on the terminal pad side with, for example, a laser.

Next, embodiments of the present invention will be described with reference to the accompanying drawings for understanding of the present invention.
Here, FIGS. 1A and 1B are explanatory views of a semiconductor device manufactured by the method of manufacturing a semiconductor device according to the first and second embodiments of the present invention, and FIGS. ) Is an explanatory view of the manufacturing method of the semiconductor device according to the first embodiment of the present invention, and FIGS. 3A to 3L are descriptions of the manufacturing method of the semiconductor device according to the second embodiment of the present invention. 4 and 4 are explanatory views of another semiconductor device to which the present invention is applicable. 2E to 2H and 3E to 3H are shown upside down.

First, a semiconductor device 10 manufactured by the method for manufacturing a semiconductor device according to the first and second embodiments of the present invention will be described with reference to FIG.
As shown in FIGS. 1A and 1B, a semiconductor device 10 is mounted on a lead frame base 12 having a plurality of terminal pads 11 arranged in a grid array on the back surface side, and the lead frame base 12. The semiconductor element 13, the bonding wires 15 that connect the bonding terminals 14 and 14 a formed around the lead frame base 12 and the semiconductor element 13, and the upper side of the lead frame base 12, the semiconductor element 13 and the bonding wire 15 are sealed. Sealing resin 16 to be used.
In the lead frame base 12, the respective terminal pads 11 are exposed at the bottom on the back surface side, and on the front surface side there are bonding terminals 14 and 14a around the semiconductor element 13 to be mounted. In this embodiment, the terminal pads 11 around the semiconductor element 13 are directly connected to the junction terminals 14 located above the terminal pads 11, but the terminal pads 11 arranged in a grid form immediately below the semiconductor elements 13 are leads 17. Is connected to the junction terminal 14a. In this embodiment, the joint terminal 14 a has the same width as the lead 17, and the tip side of the lead 17 located outside the semiconductor element 13 forms the joint terminal 14 a. Therefore, the plurality of joining terminals 14 and 14a provided on the front surface side of the lead frame base 12 and the plurality of terminal pads 11 exposed on the back surface side are connected in a one-to-one relationship.

The terminal pad 11, the lead 17 exposed on the surface of the lead frame base 12 and the joining terminals 14 and 14 a are fixed with a resin 19 different from the sealing resin 16. The resin 19 is preferably 4/5 to 1/2 times the height of the lead frame base 12, for example.
Further, the bonding terminals 14 and 14a and the leads 17 exposed on the upper portion (that is, the front surface side) of the lead frame base 12 and the terminal pads 11 exposed on the back surface side are precious metal (for example, Ag, Au, Pt, Pd) plating 20 , 21 is formed through a thin base plating of Ni or Ag (except when the noble metal plating is Ag plating). It is sufficient that the noble metal platings 20 and 21 have a thickness of 0.2 to 3 μm.

The semiconductor element 13 is mounted on the center of the lead frame base 12 via an adhesive made of paste or sheet material. Each electrode pad 22 provided on the semiconductor element 13 and the corresponding bonding terminals 14 and 14 a are connected through bonding wires 15.
The sealing resin 16 is an epoxy resin, and seals and protects the semiconductor element 13, the bonding wire 15, and the lead frame base 12.

Next, a method for manufacturing the semiconductor device according to the first embodiment of the present invention will be described with reference to FIG. In practice, a plurality of semiconductor devices 10 are manufactured in a grid pattern on one lead frame member 23, but only one semiconductor device 10 will be described below.
As shown in FIG. 2 (A), a lead frame member 23 having a predetermined thickness made of copper, copper alloy, iron alloy or the like is prepared, and as shown in FIG. After performing the coating process with the second resist films 24 and 25, as shown in FIG. 2C, the first and second resist films 24 and 25 are exposed and developed, respectively. Then, on the surface side of the lead frame material 23, the front wiring pattern 26 is formed in which the bonding terminals 14 and 14a of the bonding wires 15 from the semiconductor element 13 and the portions to be the leads 17 bonded thereto are exposed. Further, a back side wiring pattern 27 is formed on the back side of the lead frame material 23 so as to expose a portion to be the terminal pad 11 (the first step).

Next, as shown in FIG. 2D, noble metal plating 21 is applied to the front and back exposed portions of the lead frame material 23 in which the front-side wiring pattern 26 and the back-side wiring pattern 27 are formed by the first and second resist films 24 and 25. (Etching-resistant plating treatment) is performed. The noble metal platings 20 and 21 are not dissolved in the etching solution used in the following steps, and act as an etching-resistant plating film (the second step).

Thereafter, the second resist film 25 on the back surface side is removed as shown in FIG. 2 (E), and the noble metal platings 20 and 21 are read as resist films for etching resistance as shown in FIG. 2 (F). Half etching of the back side of the frame material 23 is performed. In this case, since the surface side of the lead frame material 23 is covered with the noble metal plating 20 and the first resist film 24, only the exposed portion of the back side wiring pattern 27 formed of the second resist film 25 is half-etched. A recess 29 is formed. For the depth of the half etching, for example, about 4/5 to 1/2 of the thickness of the lead frame member 23 is sufficient. As a result, the portions to be the terminal pads 11 arranged in the grid array are projected (the third step).

Thereafter, as shown in FIG. 2G, the first resist film 24 on the surface side is removed. Then, as shown in FIG. 2 (H), the resin 19 is injected into the recess 29 that has been half-etched on the back surface side in the third step using a mold apparatus. In this mold apparatus, if there is a gap between the mold and the surface of the noble metal plating 21 to be the terminal pad 11, the surface of the terminal pad 11 is soiled with resin, so that the gap is sufficiently small. (For example, 10 μm or less) while pressing the mold against the noble metal plating 21. As a result, the terminal pads 11 are connected by the resin 19 (the fourth step). The first resist film 24 on the surface side may be peeled after the resin 19 is injected into the recess 29.

Next, as shown in FIG. 2I, the surface side of the lead frame member 23 is etched. In this case, the noble metal plating 20 on the surface side of the lead frame 23 acts as a resist film for etching resistance. Thereby, each joint terminal 14 and the joint terminal 14a joined to each lead 17 are separated in an electrically non-joined state. The separated joining terminals 14 and 14a and the leads 17 are connected by the resin 19 to form the lead frame base 12 (the fifth step).

As shown in FIG. 2J, the semiconductor element 13 is mounted at the center of the lead frame base 12 formed by the above steps, and the bonding terminals 14 and 14a and the electrode pads 22 of the semiconductor element 13 are bonded to the bonding wires. Wire bonding is performed at 15 (the sixth step). Thereafter, using a mold apparatus (not shown), the lead frame base 12, the semiconductor element 13, and the bonding wire 15 are resin-sealed with the terminal pads 11 exposed on the back surface (the seventh step). As a result, the semiconductor device 10 is completed, but the surface of the terminal pad 11 exposed on the back side may be further laid by noble metal plating or solder, and the resin 19 on the back side is partially removed by chemicals or laser. Thus, the terminal pad 11 may be protruded. Thereafter, as shown in FIG. 2K, the semiconductor devices 10 arranged in a lattice are separated to complete the individual semiconductor devices 10.

In the third step of the method of manufacturing the semiconductor device according to the first embodiment, as shown in FIG. 2E, the second resist on the back surface side is covered with a sealing sheet material or the like. Only the film 25 is removed, but the first and second resist films 24 and 25 on the front surface side and the back surface side are completely removed by the process of FIG. 2E, and then the front side wiring pattern is formed. The covered surface side is covered with a third resist film, and then the back surface side can be half-etched as shown in FIG. In this case, in the next process shown in FIG. 2G, the third resist film is removed, and the resin is injected in the next process shown in FIG.

Next, a method for manufacturing a semiconductor device according to the second embodiment of the present invention will be described with reference to FIG. The same components as those in the semiconductor device manufacturing method according to the first embodiment are denoted by the same reference numerals.
As shown in FIG. 3A, a lead frame member 23 having a predetermined thickness made of copper, copper alloy, iron alloy or the like is prepared. As shown in FIG. After the coating process is performed on the second resist films 24 and 25, as shown in FIG. 3C, the first and second resist films 24 and 25 are subjected to an exposure process and a development process, respectively. Then, on the surface side of the lead frame material 23, the front wiring pattern 26 is formed in which the bonding terminals 14 and 14a of the bonding wires 15 from the semiconductor element 13 and the portions to be the leads 17 bonded thereto are exposed. Further, the back side wiring pattern 32 is formed on the back side of the lead frame material 23 so as to expose portions other than the terminal pads 11 (the first step).

Next, as shown in FIG. 3D, the front-side wiring pattern 26 is covered with an etching resistant mask 33 so that the surface side of the lead frame material 23 is not etched, as shown in FIG. Then, half etching of the back surface side of the lead frame material 23 is performed. As a result, the periphery of the terminal pad 11 is half-etched to form the recessed portion 29 (the second step).
Then, as shown in FIG. 3 (F), a resin 34 is injected into the recess 29 that is a half-etched portion. The height of the resin 34 is higher by the thickness of the second resist film 25 than the resin 19 according to the first embodiment (the third step).

Thereafter, as shown in FIG. 3G, the mask 33 covering the front-side wiring pattern 26 is removed and the second wiring pattern 32 is adhered to the back side of the lead frame material 23 to form the back-side wiring pattern 32. The resist film 25 is removed, and as shown in FIG. 3H, noble metal plating 35 and 36 having etching resistance is performed on the front and back surfaces of the exposed portion of the lead frame 23 (etching-resistant plating process). In this case, for example, base Ni plating is preferably performed on the noble metal plating 35, 36, but the portion where the terminal pad 11 is formed is preferably thicker than the thickness of the second resist film 25. Thereby, the terminal pad 11 protrudes to the back surface side (the fourth step).

As shown in FIG. 3I, thereafter, the first resist film 24 that was adhered to the surface side of the lead frame material 23 to form the front-side wiring pattern 26 was removed, and further, FIG. Etching is performed as shown in FIG. As a result, the adjacent joint terminals 14 and the joint terminals 14 a connected to the leads 17 are independently separated and integrated with the terminal pads 11 connected thereto, and the terminal pads 11 are connected by the resin 34. As a result, the lead frame base 12 is eventually formed (the fifth step).

As shown in FIG. 3K, the semiconductor element 13 is mounted at the center of the lead frame base 12 formed by the above steps, and the bonding terminals 14 and 14a and the electrode pads 22 of the semiconductor element 13 are bonded to the bonding wires. Wire bonding is performed at 15 (the sixth step). Thereafter, the lead frame base 12, the semiconductor element 13, and the bonding wire 15 are resin-sealed by using a mold device (not shown) with the terminal pad 11 exposed on the back surface, thereby completing the semiconductor device 10 ( As described above, since the seventh step) is arranged in a lattice shape, each semiconductor device 10 is individualized as shown in FIG. 3L to complete a single semiconductor device 10.

The semiconductor device 10 manufactured in the first and second embodiments has a terminal pad 11 directly below the semiconductor element 13 as shown in FIG. 1, but as shown in FIG. The present invention is also applied to the semiconductor device 37 in which only the semiconductor element mounting portion 37a is provided immediately below the semiconductor element 13. Since the semiconductor element 13 is mounted on the semiconductor element mounting portion 37a and the noble metal plating 38 is formed on at least the back surface side of the semiconductor element mounting portion 37, the heat dissipation of the semiconductor element 13 is good. In addition, 39 is a build-up part by solder or thick plating, and this build-up part 39 can also be abbreviate | omitted.
The present invention is not limited to the above-described embodiment, and the present invention is applied even if the process is changed or partially improved without changing the gist of the present invention.

(A), (B) is explanatory drawing of the semiconductor device manufactured by the manufacturing method of the semiconductor device which concerns on the 1st, 2nd embodiment of this invention. (A)-(K) are explanatory drawings of the manufacturing method of the semiconductor device which concerns on the 1st Embodiment of this invention. (A)-(L) is explanatory drawing of the manufacturing method of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is explanatory drawing of the other semiconductor device which can apply this invention.

Explanation of symbols

10: Semiconductor device, 11: Terminal pad, 12: Lead frame base, 13: Semiconductor element, 14, 14a: Bonding terminal, 15: Bonding wire, 16: Sealing resin, 17: Lead, 19: Resin, 20, 21 : Precious metal plating, 22: Electrode pad, 23: Lead frame material, 24: First resist film, 25: Second resist film, 26: Front side wiring pattern, 27: Back side wiring pattern, 29: Recessed part, 32: Back side wiring pattern, 33: mask, 34: resin, 35, 36: noble metal plating, 37: semiconductor device, 37a: semiconductor element mounting portion, 38: noble metal plating, 39: overlaying portion

Claims (7)

A method of manufacturing a semiconductor device having a plurality of terminal pads on the back side, and a semiconductor element sealed with resin inside,
After the front and back surfaces of the lead frame material are coated with the first and second resist films, respectively, the first and second resist films are exposed and developed, respectively, and the surface side of the lead frame material Then, the front side wiring pattern in which the bonding terminals of the bonding wires from the semiconductor elements and the leads bonded thereto are exposed, and the back side wiring pattern in which the terminal pads are exposed on the back side of the lead frame material are formed. The first step;
A second step of performing etching-resistant plating on the front and back exposed portions of the lead frame material in which the front-side wiring pattern and the back-side wiring pattern are formed by the first and second resist films;
A third step of removing the second resist film on the back surface side and performing half etching on the back surface side of the lead frame material using the etching-resistant plating as a resist film;
A fourth step of removing the first resist film on the front surface side and injecting a resin into the hollow portion half-etched on the back surface side in the third step;
A fifth step of forming a lead frame base including the joint terminals and the leads by performing an etching process on the surface side of the lead frame material using the etching-resistant plating as a resist film;
A sixth step in which the semiconductor element is mounted on the lead frame base formed in the fifth step, and wire bonding is performed between the bonding terminals;
And a seventh step of resin-sealing the lead frame base, the semiconductor element, and the bonding wires with the terminal pads exposed on the back surface. A method of manufacturing a semiconductor device having a plurality of terminal pads on the back surface side and having a semiconductor element sealed with resin inside,
After the front and back surfaces of the lead frame material are coated with the first and second resist films, respectively, the first and second resist films are exposed and developed, respectively, and the surface side of the lead frame material Then, a front side wiring pattern in which a bonding terminal of the bonding wire from the semiconductor element and a lead bonded thereto are exposed, and a back side wiring pattern in which the terminal pad is exposed on the back side of the lead frame material are formed. The first step;
A second step of performing etching-resistant plating on the front and back exposed portions of the lead frame material in which the front-side wiring pattern and the back-side wiring pattern are formed by the first and second resist films;
After removing the first and second resist films on the front surface side and the back surface side, the front surface side is further covered with a third resist film, and the back surface of the lead frame material using the etching-resistant plating on the back surface side as a resist film A third step of performing half etching on the side;
A fourth step of removing the third resist film on the front surface side and injecting a resin into the hollow portion half-etched on the back surface side in the third step;
A fifth step of forming a lead frame base including the joint terminals and the leads by performing an etching process on the surface side of the lead frame material using the etching-resistant plating as a resist film;
A sixth step in which the semiconductor element is mounted on the lead frame base formed in the fifth step, and wire bonding is performed between the bonding terminals;
And a seventh step of resin-sealing the lead frame base, the semiconductor element, and the bonding wires with the terminal pads exposed on the back surface. A method of manufacturing a semiconductor device having a plurality of terminal pads on the back surface side and having a semiconductor element sealed with resin inside,
After the front and back surfaces of the lead frame material are coated with the first and second resist films, respectively, the first and second resist films are exposed and developed, respectively, and the surface side of the lead frame material A first step of forming a front-side wiring pattern exposing a bonding terminal of a bonding wire from the semiconductor element and a lead connected thereto, and a back-side wiring pattern for hiding the terminal pad on the back side of the lead frame material When,
A second step in which the first resist film of the lead frame material is covered with a mask to cover the entire surface thereof, and further half-etched to remove a portion excluding the terminal pads on the back surface side;
A third step of injecting resin into a half-etched portion on the back side of the lead frame material;
The second resist film on the back side of the lead frame material is peeled off, and the mask on the front side is removed to expose the front side wiring pattern formed by the first resist film. A fourth step of performing an etching plating process;
A fifth step of removing the first resist film and performing an etching process to form a lead frame base including the joining terminals and the leads;
A sixth step in which the semiconductor element is mounted on the lead frame base formed in the fifth step, and wire bonding is performed between the bonding terminals;
And a seventh step of resin-sealing the lead frame base, the semiconductor element, and the bonding wires with the terminal pads exposed on the back surface. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the surface of the terminal pad exposed on a back surface side is subjected to a build-up process by thick plating or solder, and the terminal pad is the semiconductor device. A method of manufacturing a semiconductor device, wherein the method protrudes from the back surface of the device. 5. The method of manufacturing a semiconductor device according to claim 1, wherein a resin is partially removed from the back surface of the manufactured semiconductor device, and the terminal pads protrude from the back surface of the semiconductor device. A method for manufacturing a semiconductor device. 6. The method of manufacturing a semiconductor device according to claim 1, wherein the etching-resistant plating is precious metal plating. 7. The method of manufacturing a semiconductor device according to claim 1, wherein the manufactured semiconductor device is provided with the terminal pad also directly under the semiconductor element. Production method.

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