JP4137981B2 - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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JP4137981B2
JP4137981B2 JP2007067330A JP2007067330A JP4137981B2 JP 4137981 B2 JP4137981 B2 JP 4137981B2 JP 2007067330 A JP2007067330 A JP 2007067330A JP 2007067330 A JP2007067330 A JP 2007067330A JP 4137981 B2 JP4137981 B2 JP 4137981B2
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lead frame
frame material
surface side
semiconductor element
semiconductor device
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高士 中島
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Mitsui High Tech Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be manufactured at relatively low cost. <P>SOLUTION: A semiconductor element 11 is disposed in the center. A conductive terminal 14 having an upper surface side which acts as a wire bonding portion 12 and having a lower surface side which acts as an external connection terminal portion 13 is disposed in an area array around the semiconductor element 11. The wire bonding portion 12 is electrically connected to a corresponding electrode pad 15 on the semiconductor element 11 by a bonding wire 16. The semiconductor element 11, the bonding wire 16, and the upper half of the conductive terminal 14 are resin-sealed by a seal resin 18. <P>COPYRIGHT: (C)2007,JPO&amp;INPIT

Description

本発明は、ＣＳＰ（チップサイズパッケージ）の半導体装置の製造方法に係り、特に、外部接続端子部が封止樹脂の底面側に突出した半導体装置の製造方法に関する。 The present invention relates to a method for manufacturing a CSP (chip size package) semiconductor device, and more particularly to a method for manufacturing a semiconductor device in which an external connection terminal portion protrudes toward the bottom surface side of a sealing resin.

半導体装置の小型化の要請から、ポリイミド樹脂テープと半田ボールを用いたテープＣＳＰ型の半導体装置や、ベースメタルを使用したＢＣＣ（バンプチップキャリア）型の半導体装置が知られている。 From the demand for miniaturization of semiconductor devices, tape CSP type semiconductor devices using polyimide resin tape and solder balls, and BCC (bump chip carrier) type semiconductor devices using base metal are known.

しかしながら、テープＣＳＰ型の半導体装置においては、ポリイミド樹脂テープが高価であり、軟質のためにストリップ搬送に適していないという問題がある。
また、ＢＣＣ型の半導体装置においては、ベースメタルをエッチングによってリムーブすると固片になってしまうので、モールド面を粘着テープで固定する必要があり、コスト高となるという問題がある。
本発明はかかる事情に鑑みてなされたもので、比較的安価に製造可能な半導体装置の製造方法を提供することを目的とする。 However, in the tape CSP type semiconductor device, there is a problem that the polyimide resin tape is expensive and is not suitable for strip conveyance due to its softness.
Further, in the BCC type semiconductor device, when the base metal is removed by etching, it becomes a solid piece, so that there is a problem that it is necessary to fix the mold surface with an adhesive tape and the cost is increased.
The present invention has been made in view of such circumstances, and an object thereof is to provide a method of manufacturing a semiconductor device that can be manufactured at a relatively low cost.

前記目的に沿う本発明に係る半導体装置の製造方法は、リードフレーム材の表面側に、中央に搭載予定の半導体素子を囲んで形成されるワイヤボンディング部と、該ワイヤボンディング部に対応して裏面側に形成される外部接続端子部とに貴金属めっき層を形成する第１工程と、
前記リードフレーム材の裏面側に耐エッチングレジスト膜を形成した後、表面側に形成された前記貴金属めっき層をレジストマスクとして該リードフレーム材に所定深さのハーフエッチング加工を行い、前記ワイヤボンディング部を突出させる第２工程と、
ハーフエッチングされた前記リードフレーム材の表面側中央に前記半導体素子を搭載した後、前記半導体素子の電極パッドとそれぞれ対応する前記ワイヤボンディング部との間をボンディングワイヤによって接続し、電気的導通回路を形成する第３工程と、
前記半導体素子、及び前記ボンディングワイヤを含む前記リードフレーム材の表面側を封止樹脂で樹脂封止する第４工程と、
前記リードフレーム材の裏面側に形成された前記貴金属めっき層をレジストマスクとしてエッチング加工を行って、前記外部接続端子部を突出させると共に、隣り合う該外部接続端子部を電気的に独立させる第５工程とを有すると共に、
前記リードフレーム材の裏面側に形成された耐エッチングレジスト膜を除去する工程を、前記第２工程の完了後でかつ前記第５工程の前に有する。 A method of manufacturing a semiconductor device according to the present invention in accordance with the above object includes a wire bonding portion formed on a front surface side of a lead frame material so as to surround a semiconductor element to be mounted in the center, and a back surface corresponding to the wire bonding portion. A first step of forming a noble metal plating layer on the external connection terminal portion formed on the side;
After forming an etching resistant resist film on the back side of the lead frame material, the lead frame material is half-etched to a predetermined depth using the noble metal plating layer formed on the front side as a resist mask, and the wire bonding portion A second step of projecting
After mounting the semiconductor element in the center of the surface side of the lead frame material that has been half-etched, the electrode pads of the semiconductor element and the corresponding wire bonding portions are connected by bonding wires, and an electric conduction circuit is formed. A third step of forming;
A fourth step of sealing the surface side of the lead frame material including the semiconductor element and the bonding wire with a sealing resin;
Etching is performed using the noble metal plating layer formed on the back surface side of the lead frame material as a resist mask to project the external connection terminal portions and to make the adjacent external connection terminal portions electrically independent. And having a process,
A step of removing the etching resistant resist film formed on the back side of the lead frame material is provided after the completion of the second step and before the fifth step.

そして、本発明に係る半導体装置の製造方法において、前記半導体素子の底面側には導電性接着剤が塗布されているのが更に好ましい。 In the method for manufacturing a semiconductor device according to the present invention, it is more preferable that a conductive adhesive is applied to the bottom surface side of the semiconductor element.

請求項１〜３記載の半導体装置の製造方法においては、従来のように、ポリイミド樹脂テープや粘着テープを使用することなく、半導体装置を製造できる。従って、ポリイミド樹脂テープや粘着テープを使用することによる半導体装置の製造上の問題を避けて、比較的安価に半導体装置の製造が可能となる。 In the method for manufacturing a semiconductor device according to any one of claims 1 to 3, the semiconductor device can be manufactured without using a polyimide resin tape or an adhesive tape as in the prior art. Therefore, it is possible to manufacture the semiconductor device at a relatively low cost while avoiding problems in manufacturing the semiconductor device due to the use of the polyimide resin tape or the adhesive tape.

続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態につき説明し、本発明の理解に供する。
ここに、図１は本発明の一実施の形態に係る半導体装置の製造方法の製造工程図、図２（Ａ）、（Ｂ）はそれぞれ同方法で製造された半導体装置の説明図、図３は同方法で製造された半導体装置の使用状態を示す断面図である。 Next, embodiments of the present invention will be described with reference to the accompanying drawings for understanding of the present invention.
1 is a manufacturing process diagram of a semiconductor device manufacturing method according to an embodiment of the present invention, FIGS. 2A and 2B are explanatory diagrams of the semiconductor device manufactured by the same method, and FIG. FIG. 6 is a cross-sectional view showing a usage state of the semiconductor device manufactured by the same method.

図１〜図３に示すように、本発明の一実施の形態に係る半導体装置１０は、中央に半導体素子１１を、その周辺にエリアアレー状（図２参照）に、上面側（表面側）がワイヤボンディング部１２となって下面側（裏面側）が外部接続端子部１３となった導体端子１４を配置している。ワイヤボンディング部１２と半導体素子１１の各電極パッド１５はボンディングワイヤ１６で電気的に連結されている。周囲にある導体からなる外枠１７を含めて、半導体素子１１、ボンディングワイヤ１６、及び導体端子１４の上半分は封止樹脂１８で樹脂封止されている。外部接続端子部１３には半田濡れ性の良いめっきが下部に設けられ、他の基板１９上に設けられたクリーム半田の溶融によって、図３に示すように、他の基板１９との電気的な接続が行われている。
半導体素子１１の底面側には導電性接着剤２０が塗布され、これによって、半導体素子１１からの熱放散を促進している。 As shown in FIGS. 1 to 3, a semiconductor device 10 according to an embodiment of the present invention includes a semiconductor element 11 in the center, an area array (see FIG. 2) in the periphery, and an upper surface side (front surface side). Is a wire bonding portion 12 and a conductor terminal 14 having a lower surface side (back surface side) serving as an external connection terminal portion 13 is disposed. The wire bonding portion 12 and each electrode pad 15 of the semiconductor element 11 are electrically connected by a bonding wire 16. The upper half of the semiconductor element 11, the bonding wire 16, and the conductor terminal 14 including the outer frame 17 made of the surrounding conductor is sealed with a sealing resin 18. The external connection terminal portion 13 is provided with a plating with good solder wettability at the bottom, and by melting the cream solder provided on the other substrate 19, as shown in FIG. A connection is being made.
A conductive adhesive 20 is applied to the bottom surface side of the semiconductor element 11, thereby promoting heat dissipation from the semiconductor element 11.

続いて、図１（Ａ）〜（Ｅ）を参照しながら、この半導体装置１０の製造方法について説明する。
図１（Ａ）に示すように、板状のリードフレーム材２１の表面側に、中央に搭載予定の半導体素子１１を囲んで形成されるワイヤボンディング部１２及びこれを囲む外枠１７と、ワイヤボンディング部１２に対応して裏面側に形成される外部接続端子部１３とに貴金属めっき層２２、２３を形成する（第１工程）。
この貴金属めっき層２２、２３の形成は、リードフレーム材２１の表面及び裏面を耐めっき性のフォトレジスト膜で覆った後、貴金属めっき層２２、２３が形成される部分に関する露光処理及びこれに続く現像処理を行って該リードフレーム材２１の部分露出を行った後に、最初にニッケル等の下地めっき層を形成し、次に貴金属めっきを行う。このように、下地めっき層を介してＡｇ、Ａｕ、Ｐｄから選択された一種類の貴金属で貴金属めっき層２２、２３を形成することによって、リードフレーム材２１に銅等を使用する場合のボンダビリティの確保と半田濡れ性の確保を維持している。 Next, a method for manufacturing the semiconductor device 10 will be described with reference to FIGS.
As shown in FIG. 1A, on the surface side of a plate-like lead frame member 21, a wire bonding portion 12 formed to surround a semiconductor element 11 to be mounted in the center, an outer frame 17 surrounding the wire bonding portion 12, and a wire Precious metal plating layers 22 and 23 are formed on the external connection terminal portion 13 formed on the back surface side corresponding to the bonding portion 12 (first step).
The noble metal plating layers 22 and 23 are formed after the front and back surfaces of the lead frame material 21 are covered with a plating-resistant photoresist film, followed by an exposure process for a portion where the noble metal plating layers 22 and 23 are formed, and the following. After the development processing is performed and the lead frame material 21 is partially exposed, a base plating layer such as nickel is first formed, and then noble metal plating is performed. Thus, bondability in the case of using copper or the like for the lead frame material 21 by forming the noble metal plating layers 22 and 23 with one kind of noble metal selected from Ag, Au, and Pd through the base plating layer. And solder wettability are maintained.

次に、図１（Ｂ）に示すように、リードフレーム材２１の裏面側に耐エッチングレジスト膜２４を形成した後、表面側に形成された貴金属めっき層２２をレジストマスクとして表面側から該リードフレーム材２１に所定深さのエッチング加工（ハーフエッチング）を行う。これによって、外枠１７とワイヤボンディング部１２とを突出させることができる（第２工程）。 Next, as shown in FIG. 1B, after forming an etching resistant resist film 24 on the back side of the lead frame material 21, the lead is formed from the front side using the noble metal plating layer 22 formed on the front side as a resist mask. The frame material 21 is etched to a predetermined depth (half etching). Thereby, the outer frame 17 and the wire bonding part 12 can be protruded (2nd process).

そして、図１（Ｃ）に示すように、ハーフエッチングされたリードフレーム材２１の表面側中央に半導体素子１１をＡｇを含むエポキシ系の接着剤２０を介して搭載した後、半導体素子１１の電極パッド１５とそれぞれ対応するワイヤボンディング部１２との間をボンディングワイヤ１６によって接続し、電気的導通回路を形成する（第３工程）。
この後、図１（Ｄ）に示すように、半導体素子１１、ボンディングワイヤ１６、及び突出した外枠１７を含むリードフレーム材２１の表面側を封止樹脂１８で樹脂封止する（第４工程）。 Then, as shown in FIG. 1C, after the semiconductor element 11 is mounted on the center of the surface side of the half-etched lead frame material 21 via the epoxy adhesive 20 containing Ag, the electrode of the semiconductor element 11 The pads 15 and the corresponding wire bonding portions 12 are connected by bonding wires 16 to form an electrical conduction circuit (third step).
Thereafter, as shown in FIG. 1D, the surface side of the lead frame material 21 including the semiconductor element 11, the bonding wire 16, and the protruding outer frame 17 is resin-sealed with a sealing resin 18 (fourth step). ).

以上の処理が終わった後、リードフレーム材２１の裏面側に貼着していた耐エッチングレジスト膜２４を除去するが、これは組み立て工程の前に行ってもよい。更に、図１（Ｅ）に示すように、リードフレーム材２１の裏面側に、裏面側に形成された貴金属めっき層２３をレジストマスクとしてエッチング加工を行って、外部接続端子部１３を突出させると共に、隣り合う外部接続端子部１３を電気的に独立させる（第５工程）。この後、外枠１７の分離を行って、独立した半導体装置１０が製造される。 After the above processing is completed, the etching resistant resist film 24 adhered to the back side of the lead frame material 21 is removed, but this may be performed before the assembly process. Further, as shown in FIG. 1E, etching is performed on the back surface side of the lead frame material 21 using the noble metal plating layer 23 formed on the back surface side as a resist mask to project the external connection terminal portion 13. The adjacent external connection terminal portions 13 are electrically independent (fifth step). Thereafter, the outer frame 17 is separated, and the independent semiconductor device 10 is manufactured.

前記実施の形態においては、半導体素子１１の接着剤２０としてＡｇを含むエポキシ系の接着剤を用いたが、その他の導電性の接着剤又は絶縁性の接着剤であっても本発明は適用される。
半導体装置の製造過程にあっては、半導体装置に残る外枠は周囲の外枠本体に実質的に連結されている必要があるので、外枠全体の全部の表面に貴金属めっき層を形成する必要はなく、外枠の一部（即ち、連結部分のみ）に貴金属めっき層を形成するのが好ましい。
また、前記実施の形態においては、耐エッチングレジスト膜の除去は、第５工程によって行ったが、第２工程が完了した後、裏面側のハーフエッチングを行う前であれば、何時行ってもよく、この場合も本発明は適用される。 In the embodiment, the epoxy adhesive containing Ag is used as the adhesive 20 of the semiconductor element 11. However, the present invention can be applied to other conductive adhesives or insulating adhesives. The
In the manufacturing process of a semiconductor device, the outer frame remaining on the semiconductor device needs to be substantially connected to the surrounding outer frame main body, so it is necessary to form a noble metal plating layer on the entire surface of the entire outer frame. Rather, it is preferable to form a noble metal plating layer on a part of the outer frame (that is, only the connecting part).
In the above embodiment, the etching-resistant resist film is removed by the fifth step. However, it may be performed at any time after the second step is completed and before half etching on the back side. In this case, the present invention is also applied.

本発明の一実施の形態に係る半導体装置の製造方法の製造工程図である。It is a manufacturing-process figure of the manufacturing method of the semiconductor device which concerns on one embodiment of this invention. （Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係る半導体装置の説明図である。(A), (B) is explanatory drawing of the semiconductor device which concerns on one embodiment of this invention, respectively. 同方法で製造された半導体装置の使用状態を示す断面図である。It is sectional drawing which shows the use condition of the semiconductor device manufactured by the same method.

符号の説明Explanation of symbols

１０：半導体装置、１１：半導体素子、１２：ワイヤボンディング部、１３：外部接続端子部、１４：導体端子、１５：電極パッド、１６：ボンディングワイヤ、１７：外枠、１８：封止樹脂、１９：他の基板、２０：Ａｇを含むエポキシ系の接着剤、２１：リードフレーム材、２２、２３：貴金属めっき層、２４：耐エッチングレジスト膜 10: Semiconductor device, 11: Semiconductor element, 12: Wire bonding part, 13: External connection terminal part, 14: Conductor terminal, 15: Electrode pad, 16: Bonding wire, 17: Outer frame, 18: Sealing resin, 19 : Other substrate, 20: Epoxy adhesive containing Ag, 21: Lead frame material, 22, 23: Precious metal plating layer, 24: Etching resistant resist film

Claims (3)

リードフレーム材の表面側に、中央に搭載予定の半導体素子を囲んで形成されるワイヤボンディング部と、該ワイヤボンディング部に対応して裏面側に形成される外部接続端子部とに貴金属めっき層を形成する第１工程と、
前記リードフレーム材の裏面側に耐エッチングレジスト膜を形成した後、表面側に形成された前記貴金属めっき層をレジストマスクとして該リードフレーム材に所定深さのハーフエッチング加工を行い、前記ワイヤボンディング部を突出させる第２工程と、
ハーフエッチングされた前記リードフレーム材の表面側中央に前記半導体素子を搭載した後、前記半導体素子の電極パッドとそれぞれ対応する前記ワイヤボンディング部との間をボンディングワイヤによって接続し、電気的導通回路を形成する第３工程と、
前記半導体素子、及び前記ボンディングワイヤを含む前記リードフレーム材の表面側を封止樹脂で樹脂封止する第４工程と、
前記リードフレーム材の裏面側に形成された前記貴金属めっき層をレジストマスクとしてエッチング加工を行って、前記外部接続端子部を突出させると共に、隣り合う該外部接続端子部を電気的に独立させる第５工程とを有すると共に、
前記リードフレーム材の裏面側に形成された耐エッチングレジスト膜を除去する工程を、前記第２工程の完了後でかつ前記第５工程の前に有することを特徴とする半導体装置の製造方法。 A noble metal plating layer is formed on the surface side of the lead frame material on the wire bonding portion formed to surround the semiconductor element to be mounted in the center, and on the external connection terminal portion formed on the back side corresponding to the wire bonding portion. A first step of forming;
After forming an etching resistant resist film on the back side of the lead frame material, the lead frame material is half-etched to a predetermined depth using the noble metal plating layer formed on the front side as a resist mask, and the wire bonding portion A second step of projecting
After mounting the semiconductor element in the center of the surface side of the lead frame material that has been half-etched, the electrode pads of the semiconductor element and the corresponding wire bonding portions are connected by bonding wires, and an electric conduction circuit is formed. A third step of forming;
A fourth step of sealing the surface side of the lead frame material including the semiconductor element and the bonding wire with a sealing resin;
Etching is performed using the noble metal plating layer formed on the back surface side of the lead frame material as a resist mask to project the external connection terminal portions and to make the adjacent external connection terminal portions electrically independent. And having a process,
A method of manufacturing a semiconductor device, comprising: a step of removing an etching resistant resist film formed on a back surface side of the lead frame material after the completion of the second step and before the fifth step. 請求項１記載の半導体装置の製造方法において、前記貴金属めっき層はＡｇ、Ａｕ、及びＰｄから選択された一種類の貴金属で形成されていることを特徴とする半導体装置の製造方法。 2. The method of manufacturing a semiconductor device according to claim 1, wherein the noble metal plating layer is formed of one kind of noble metal selected from Ag, Au, and Pd. 請求項１及び２のいずれか１項に記載の半導体装置の製造方法において、前記貴金属めっき層には下地Ｎｉめっきがなされていることを特徴とする半導体装置の製造方法。 3. The method of manufacturing a semiconductor device according to claim 1, wherein the noble metal plating layer is subjected to base Ni plating. 4.
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