JP7292352B2 - 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法 - Google Patents
樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法 Download PDFInfo
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- JP7292352B2 JP7292352B2 JP2021179156A JP2021179156A JP7292352B2 JP 7292352 B2 JP7292352 B2 JP 7292352B2 JP 2021179156 A JP2021179156 A JP 2021179156A JP 2021179156 A JP2021179156 A JP 2021179156A JP 7292352 B2 JP7292352 B2 JP 7292352B2
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Description
以下に、実施の形態1に係る樹脂封止型半導体装置について図を用いて説明する。
図1は、実施の形態1に係る樹脂封止型半導体装置の構成を示す一部断面摸式図、図2は樹脂封止型半導体装置の平面模式図である。図1は、図2中A-A方向の断面の一部に相当する。
樹脂封止型半導体装置(以下、単に半導体装置と称する)は、スイッチング素子としての半導体素子1、整流素子としての半導体素子2、ヒートスプレッダー3、第1のリードフレーム12、13、第2のリードフレーム5、モールド樹脂11を備えている。スイッチング素子としての半導体素子1は、チップ下接合材(図3参照)によりヒートスプレッダー3の一方の面に接合されている。
また、半導体素子1は大電流を流しても能動面の温度分布が均一になるように能動面の電極が分割されており、2分割以上が好ましい。
図2において、半導体素子1の能動面の電極は2分割されており、それぞれの電極に対応するようにチップ上接合材4aが配置されていることがわかる。なお、チップ上接合材4aは破線で示されている。2つの電極間上の第2のリードフレーム5には、モールド樹脂11が開口部下領域7まで容易に充填できるよう開口穴6が設けられている(図1参照)。
まず、図3中(A)のダイボンディング工程において、スイッチング素子としての半導体素子1と整流素子としての半導体素子2とをヒートスプレッダー3の一方の面上に間隔をあけて配置し、チップ下接合材4bを介して接合する。スイッチング素子としての半導体素子1は、例えばシリコンにより形成されており,IGBTが搭載され能動面の電極が2個の半導体チップが用いられる。図3では一方の電極1aのみ図示されている。整流素子としての半導体素子2は、例えばシリコンにより形成されており、ダイオードが搭載され能動面の電極が1個の半導体チップが用いられる。
また、第2のリードフレーム5に形成された溝8の形状は断面が三角形状の溝で直線形状であるが、はんだの濡れ速度を低下させかつ溢れを吸収できることができれば、これに限るものではなく、溝の形状、位置、長さは問わない。
さらに、第2のリードフレーム5に形成された障壁9は開口穴6の入り口に設けている例を示したが、はんだの流れ込みを防止できることができれば、障壁の形状、位置、長さは問わない。
以下に、実施の形態2に係る半導体装置について図を用いて説明する。
図4は、実施の形態2に係る半導体装置の構成を示す一部断面摸式図、図5は半導体装置の平面模式図である。図4は、図5中A-A方向の断面の一部に相当する。実施の形態1では、第2のリードフレーム5の半導体素子1と対向する側に、突起部10、2つの電極間に開口穴6及び突起部10と開口穴6との間に溝8を設けたが、本実施の形態2では第2のリードフレーム5の半導体素子1及び半導体素子2と対向する側のチップ上接合材4aの周辺に亘って溝8を設けた点が異なる。実施の形態2に係る溝8は製造工程においてチップ上接合材4aの配置される部分の外周に形成される。その他の構成は実施の形態1と同様であり、説明を省略する。
以上のことから、チップ上接合材4aの接合角度θが90°から135°となるようにすれば半導体素子1、2に発生する応力を抑制可能なことがわかる。
(1)実施の形態1、2において第2のリードフレーム5の突起部10は半導体素子1に対向する側に1つ設けられた例を示したが、これに限るものではない。半導体素子1の2つの電極のそれぞれに対応するように設けてもよい。さらに、半導体素子2に対向するように設けてもよい。
従って、例示されていない無数の変形例が、本願明細書に開示される技術の範囲内において想定される。例えば、少なくとも1つの構成要素を変形する場合、追加する場合または省略する場合、さらには、少なくとも1つの構成要素を抽出し、他の実施の形態の構成要素と組み合わせる場合が含まれるものとする。
Claims (5)
- 半導体素子と、
前記半導体素子の一方の面が第1の接合材を介して接合されたヒートスプレッダーと、
前記ヒートスプレッダーの前記半導体素子が接合された面に接合された第1のリードフレームと、
前記半導体素子の他方の面に第2の接合材を介して接合された第2のリードフレームと、
前記第1のリードフレームの一部及び前記第2のリードフレームの一部が露出されて前記半導体素子、前記ヒートスプレッダーとともに封止するモールド樹脂と、を備えた樹脂封止型半導体装置であって、
前記半導体素子は前記他方の面に複数の電極を有し、前記第2のリードフレームは複数の前記電極とそれぞれ前記第2の接合材を介して接合され、
前記第2のリードフレームは、前記半導体素子に対向する面に、
前記第2の接合材の厚さを規制する突起部と、
少なくとも複数の前記電極のうち隣り合う前記電極の間であってそれぞれの前記第2の接合材の周辺部に形成された溝と、を有する樹脂封止型半導体装置。 - 前記第2のリードフレームは、
隣り合う前記電極に対応するそれぞれの前記第2の接合材の周辺部に形成された前記溝との間に、前記モールド樹脂が充填された開口穴と、
前記半導体素子に対向する面の前記開口穴と前記溝との間に前記半導体素子側に突出して設けられた障壁と、をさらに備えた請求項1に記載の樹脂封止型半導体装置。 - 前記第2のリードフレームの前記溝は、前記第2の接合材の外周に沿って設けられている請求項1または2に記載の樹脂封止型半導体装置。
- 前記半導体素子はスイッチング素子である、請求項1から3のいずれか1項に記載の樹脂封止型半導体装置。
- 一方の面に複数の電極を有する半導体素子の他方の面を、ヒートスプレッダーの第1の面に、第1の接合材を介して接合するダイボンディング工程と、
前記ヒートスプレッダーの第1の面に、第1のリードフレームを接合するとともに、前記半導体素子の一方の面に対向する面に第2の接合材の厚さを規制する突起部を有する第2のリードフレームの前記突起部を前記半導体素子の複数の電極のうち1つの電極に当接し、前記第2の接合材を介して前記第2のリードフレームを複数の前記電極に接合するリフロー工程と、
前記第1のリードフレームの一部及び前記第2のリードフレームの一部を露出させた状態で、前記ヒートスプレッダー、前記半導体素子、前記第1のリードフレーム及び前記第2のリードフレームをモールド樹脂でトランスファー成形する工程と、を含む樹脂封止型半導体装置の製造方法であって、
前記第2のリードフレームは、前記半導体素子に対向する面に、溝、前記モールド樹脂が充填される開口穴、及び前記溝と前記開口穴との間に前記半導体素子側に突出している障壁、を有し、
前記リフロー工程において、前記溝を少なくとも複数の前記電極のうち隣り合う電極の間であってそれぞれ前記第2の接合材の外周側となるように配置するとともに、前記開口穴が隣り合う前記電極間に配置されたそれぞれ前記第2の接合材の外周側の前記溝との間となるように、前記第2のリードフレームを前記第2の接合材の上に配置し、前記第2の接合材が溶融された時、前記第2の接合材の余剰分が前記第2のリードフレームの面内で前記溝に誘導されるとともに、前記溝と前記開口穴との間の前記障壁により、前記第2の接合材が前記開口穴への流れ込むのを防止して、前記半導体素子の上に第2の接合材を介して第2のリードフレームが接合され、
前記トランスファー成形する工程において、前記開口穴から前記半導体素子の一方の面に前記モールド樹脂が充填される、樹脂封止型半導体装置の製造方法。
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JP2016146450A (ja) | 2015-02-09 | 2016-08-12 | 株式会社デンソー | 電子装置 |
JP2018157157A (ja) | 2017-03-21 | 2018-10-04 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP2020120037A (ja) | 2019-01-25 | 2020-08-06 | トヨタ自動車株式会社 | 半導体モジュールの製造方法 |
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US20230132513A1 (en) | 2023-05-04 |
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