JP2010067784A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 146
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229910000679 solder Inorganic materials 0.000 claims abstract description 103
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 23
- 230000015556 catabolic process Effects 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000005304 joining Methods 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 13
- 230000035882 stress Effects 0.000 description 24
- 238000009826 distribution Methods 0.000 description 15
- 239000010949 copper Substances 0.000 description 13
- 230000008646 thermal stress Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 5
- 229910007637 SnAg Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BJXYHBKEQFQVES-NWDGAFQWSA-N enpatoran Chemical compound N[C@H]1CN(C[C@H](C1)C(F)(F)F)C1=C2C=CC=NC2=C(C=C1)C#N BJXYHBKEQFQVES-NWDGAFQWSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/732—Location after the connecting process
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/181—Encapsulation
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- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Abstract
【解決手段】半導体素子1のおもて面に表面電極11が設けられている。表面電極11は、例えばAl膜12の上にNi膜13が積層された構造である。この表面電極11は、リードフレーム3と半田層2を介して接合している。そして、フィレット20の幅x、すなわち半田層2のリードフレーム3との接触面の端部より外側の領域の幅を、半田層2の厚さhの2倍以上とする。
【選択図】図1
Description
図1は、実施の形態1にかかる半導体装置の構造について示す要部の断面図である。図1においては、パッケージ構造の半導体装置における半導体素子1と、リードフレーム3との接合部分を拡大して示している。図1に示すように、実施の形態1にかかる半導体装置において、半導体素子1は、半田層2を介してリードフレーム3と接合している。なお、半田層2のリードフレーム3との接触面の端部より外側の領域を、フィレット20とする。
つぎに、実施の形態1にかかる半導体装置におけるフィレットのアスペクト比について説明する。まず、アスペクト比が異なる場合にフィレットにかかる熱応力の比を、有限要素法(FEM)解析によって構造解析した結果を図3に示す。図3は、アスペクト比と、フィレットにかかる熱応力比と、の関係について示す特性図である。なお、図3において、縦軸は、熱応力比であり、横軸は、アスペクト比である。また、FEM解析の前提条件として、図1に示した層構成を仮定している。
つぎに、実施の形態2にかかる半導体装置の製造方法について説明する。図10〜図13は、実施の形態2にかかる半導体装置の製造方法について順に示す平面図である。まず、図10に示すように、半導体素子1の活性領域51の周囲の耐圧構造領域52において、ガードリングとなる絶縁膜4を形成する。
2 半田層
3 リードフレーム
11 表面電極
12 Al膜
13 Ni膜
20 フィレット
Claims (10)
- 半導体素子のおもて面に設けられた表面電極と、リードフレームとが半田層によって接合された半導体装置において、
前記半田層が鉛フリー半田からなり、前記半田層の前記リードフレームとの接触面の端部より外側の領域の幅が、前記半田層の厚さの2倍以上であることを特徴とする半導体装置。 - 前記半導体素子は、前記表面電極の設けられた活性領域と、前記活性領域の周囲に設けられた耐圧構造領域と、を備え、
前記表面電極は、前記活性領域において、アルミニウム膜と、ニッケル膜とがこの順に積層されており、
前記ニッケル膜と、前記耐圧構造領域に設けられた絶縁膜との境界を、前記半田層が覆わないことを特徴とする請求項1に記載の半導体装置。 - 前記半田層の厚さは、50μm以上500μm以下であることを特徴とする請求項1または2に記載の半導体装置。
- 前記半田層の厚さは、好ましくは、150μm以上250μm以下であることを特徴とする請求項3に記載の半導体装置。
- 前記半田層は、端部の形状が直線形状であることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記半田層は、端部の形状が上に凸の形状であることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記半導体素子は、縦型の絶縁ゲートバイポーラトランジスタであることを特徴とする請求項1〜6のいずれか一つに記載の半導体装置。
- おもて面に表面電極を有する活性領域と、前記活性領域の周囲に設けられた耐圧構造領域とを有する半導体素子の当該表面電極が、半田層によってリードフレームに接合された半導体装置の製造方法において、
前記半導体素子の前記活性領域内に、当該活性領域と前記耐圧構造領域との境界から所定の幅のマスクを形成するマスク形成工程と、
前記活性領域の前記マスクの形成されていない領域に、前記半田層の前記リードフレームとの接触面の端部より外側の領域の幅が厚さの2倍以上となる量の鉛フリー半田を設ける半田載せ工程と、
前記半田の上に、前記リードフレームを載置する載置工程と、
前記半田が前記半導体素子と前記リードフレームとに挟まれた状態のまま加熱し、当該半田によって当該半導体素子と当該リードフレームとを接合する接合工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記マスク形成工程の前、または前記マスク形成工程と前記半田載せ工程との間に、
前記半導体素子の前記表面電極に、金をめっきするめっき工程をさらに含むことを特徴とする請求項8に記載の半導体装置の製造方法。 - 前記マスク形成工程の前、または前記マスク形成工程と前記半田載せ工程との間に、
前記半導体素子の表面電極の表面に形成されている酸化膜を除去する酸化膜除去工程をさらに含むことを特徴とする請求項8に記載の半導体装置の製造方法。
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