JPS62287634A - 半導体素子結線用細線 - Google Patents

半導体素子結線用細線

Info

Publication number
JPS62287634A
JPS62287634A JP61132565A JP13256586A JPS62287634A JP S62287634 A JPS62287634 A JP S62287634A JP 61132565 A JP61132565 A JP 61132565A JP 13256586 A JP13256586 A JP 13256586A JP S62287634 A JPS62287634 A JP S62287634A
Authority
JP
Japan
Prior art keywords
wire
core
surface layer
purity
hardness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61132565A
Other languages
English (en)
Other versions
JPH0319702B2 (ja
Inventor
Yoichi Yorita
寄田　洋一
Masaaki Shimotomai
下斗米　将昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OPTIC DAIICHI DENKO CO Ltd
Mitsubishi Electric Corp
Original Assignee
OPTIC DAIICHI DENKO CO Ltd
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OPTIC DAIICHI DENKO CO Ltd, Mitsubishi Electric Corp filed Critical OPTIC DAIICHI DENKO CO Ltd
Priority to JP61132565A priority Critical patent/JPS62287634A/ja
Publication of JPS62287634A publication Critical patent/JPS62287634A/ja
Publication of JPH0319702B2 publication Critical patent/JPH0319702B2/ja
Granted legal-status Critical Current

Links

Classifications

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ３、発明の詳細な説明 （発明の１１用分野） 本発明は、半導体素子上の電極と外部リードとの結線に
用いろ半導体素子結線用細線に関する。
（従来技術） ＩＣ−？３ＬＳＩ等の半導体素子において、例えば第３
図に示すようにＳｉ半導体チップ１の電極２と外部リー
ドフレーム３とを結線用細線４で電気接続するようにな
っているが、この接続は作業性に優れたポールポンディ
ング７去が主に用いられている。本方法は第２図に示す
ようにこのボンディング法に用いられるキャピラリ５の
先端部に結線用細線４を露出させて、その先端部を電気
アークあるいは水素アークにより加熱させてポール６を
形成し、これを第３図に示すように半導体チップ１の電
極２に熱圧若により接続し、次に弧を描くようにｍ線４
を延ばし、外部リードフレーム３に細線４の一部を圧接
し、切断するようにしたものである。
従ってこの種結線用細線４としては、半導体素子の電極
への圧着に用いるキャピラ゛Ｊ５との接触通過時に細粉
がキーピラリに付着して橿粉詰まりを起こさせないよう
にすること、上記電極に充分に均一に圧接するよう安定
したポール６に形成されること、ポール６の電極への接
着強度が高いこと、結線用細線４が上記電極２と外部リ
ードフレーム３と接続されたとき弧を描くよう、卯ちル
ープ状Ｓこつながれること（このループ線が第３図で一
寺鎖線で示すように寝丁ぎるとポール６の根元で断線さ
れやすい）、などが要求され、従来から主に金線が使用
されている。
しかし金線は非常に高価であるから（面格的に廉価な銅
線を用いる試みがなされているが、銅線を用いてポール
ボンディング法によって熱圧着すると銅粉が発生してキ
ャピラリの銅粉詰まりを起こしたり、接着強度が充分に
出ないなどの欠点があった。
これを改善するために銅にＢｅ、　Ｓｎ、　Ｚｎ、　Ａ
ｇ、　Ｚｒ。
Ｃｒ、　Ｆｅ等を０．１〜２重量％添加した銅合金が提
案されているが、これをポールボンディング法にて使用
した場合次のような欠点があった。
まずＳｉ素子上に銅合金ボールを熱圧着する際、銅合金
ポールの硬さが必要以上に大きいため、素子電極面にク
ラックを生しる。
銅合金ボールの硬さを小さくするために、熱圧着温度あ
るいはキャピラリ温度を上げるとループ線が寝すぎて良
好なループ形成性をもたすことが不充分になり断線の原
因となる想れがある。
また銅合金のほとんどを占める銅の細粉がキャピラリに
接触する際に多く発生し、キャピラリの銅粉詰まりを起
こし結線作業上支障をきたす事態があった。
（発明が解決しようとする問題点） 本発明の目的は銅の物理的特性および低価格性を失うこ
となく、これを最大限に生かし、かつポールボンディン
グに通した硬さで、その作業性に優れた半導体素子結線
用細線を提供しようとするものである。
（問題点を解決するための手段） 上記目的を達成するために本発明の第１は、純度９９重
量％以上のＣｕからなり、これを伸線加工すると共に、
最終工程でスキンパス加工することにより第１図で示す
ように表面層Ｂの硬さを芯部Ａよりも２５〜４５％高く
してなる構成を採用するものである。
また本発明の第２は、純度９９．９９重量％以上のＣｕ
を芯部として、これにＡｇ、　Ｓｎ、　Ｂｅ、　Ｚｒ、
　Ｚｎ、　ＡＩ。
Ｃｒからなる群から選ばれた１種の金属からなる被覆石
を設け、この状態で伸線加工すると共に、最終工程でス
キンパス加工することにより表面層の硬さを芯部よりも
３０〜５０％高くしてなる構成を採用するものである。
（作　用） 銅の純度を９９．９９重量％以上としたのは結線用細線
の変形挙動を金線の場合に近づけ、圧着時にＳｉ半導体
素子を用傷することなく充分安定であり、高導電性と信
頼性に優れた接続を得るためで、９９゜９９Ｔ（ｉ量％
未満では、３１半導体素子にクラックを生じさせやすい
ことがわかっている。
さらにこのような高純度の芯線に、最終工程でスキンパ
ス加工（低減面率のもとで軽い冷間伸線を行うこと）を
行うのは、銅の表面のみを硬化させるためで、この場合
表面層の硬さを芯部よりも２５〜４５％高くすることが
必要で、このためにはスキンパス加工の加工度は５〜２
０％の範囲内で行う。
加工度が４％以下では加工硬化が小さく、また２１％以
上では伸線の芯部まで加工硬化し、この種細線の伸びの
低下およびカール発生の原因となる。
また第２発明において、上記のような高純度の銅を芯部
として使用し、これにＡｇ、　Ｓｎ、　Ｂｅ、　Ｚｒ。
Ｚｎ、　Ａｌ、　Ｃｒ力）らなる群力）ら選ばれた／ｆ
覗の金属からなる被覆層を設け、この状態で伸線加工す
るようにしたのは、最終工程のスキンパス加工による加
工硬化性を一層高め、細線の曲げ強度を高めるためであ
る。なおこの場合スキンパス加工後の被覆層（被覆拡散
Ｎ＞　Ａの厚さは第１図に示すように線径Ｄ（直径）の
１／１０〜３／１０の比率に形成することが好ましい。
（実施例） 以下、この発明の実施例に係る半導体結線用細線１〜６
と比較例の同細線７〜９についてシリコン素子のクラン
ク不良率、細線の硬度（芯部と表面層の硬度）、銅粉の
発生率、ボール形成性、ループ形成性を測定した。下記
表１がそれである。
なおこの発明に係る実旅例阻１〜寛６は次のようにして
製造されたものである。即ち純度９９．９９８％の再電
解銅を素材料としてこれを伸線機によって２６μφまで
伸線しかつフル焼鈍を行い、最終工程で５〜２０％の加
工度でスキンパス加工により２５μφの細線に仕上げた
ものである。また比較例の隘７〜寛９に示すものは、上
記と同一の製造工程でスキンパス加工の加工度を変えた
ものである。
以下余白 表−１ また第２発明に係る実施例鳩】〜患６に示す芯部Ａおよ
び被ｒｘＮＢは次のようにして製造したものである。即
ち純度９９．９９８％の再電解銅を素材料としてこれを
伸線機によって０　、９　＊ｍφまで伸線加工し、これ
を酸化物および油脂除去の前処理の後に、電気メッキま
たは熔融メッキ法などにより表２に示す元素金属をその
濃度が１００〜３００ｐｐｍになるようメブキ条件を設
定してメッキ処理し、しかる後に全体のＩｉ！径が２６
μφになるまで伸線・熱処理（焼鈍）加工をし、更に加
工度１０％のスキンパス加工により２５μφとし、被覆
拡散１’ＨＢの硬さが芯部Ａよりも２５〜４５％高くな
るような厚さ０．０５〜０．２μの被覆拡散層Ｂを形成
するようにしたものである。また比較例の魚７〜寛９に
示すものは、上記と同一の製造工程で樹の純度を変えた
ものである。この測定結果は下記表２に示すとおりであ
る。
表−２ （効　果） 本発明によれば、表１及び表２から明らかなように９９
．９９％以上の純度の高い銅をそのまま細線として採用
するため、高導電性と良好なポール形成性を維持できる
と共に、半導体素子に対するクランク発生度を無（する
ことができ、なおかつ表面石の適度の硬度によって芯部
の銅を保護し、キャピラリ接触時の銅粉の発生が皆無と
なり、更にループの形成性が良好となることが分かる。
【図面の簡単な説明】
第１図は、本発明の一実施例における半導体素子結線用
細線の拡大断面図、第２図は同細線をキャピラリに挿通
させて、その先端部で形成されるボールの状態を示す説
明図、第３図は同細線で半導体素子に接続された状態を
示す説明図である。

Claims (1)

  1. 【特許請求の範囲】 １、純度９９．９９重量％以上のＣｕからなり、これを
    伸線加工すると共に、最終工程でスキンパス加工するこ
    とにより表面層の硬さを芯部よりも２５〜４５％高くし
    てなる半導体素子結線用細線。 ２、純度９９．９９重量％以上のＣｕを芯部として、こ
    れにＡｇ、Ｓｎ、Ｂｅ、Ｚｒ、Ｚｎ、Ａｌ、Ｃｒからな
    る群から選ばれた１種の金属からなる被覆層を設け、こ
    の状態で伸線加工すると共に、最終工程でスキンパス加
    工することにより表面層の硬さを芯部よりも３０〜５０
    ％高くしてなる半導体素子結線用細線。 ３、前記表面層（被覆拡散層）の厚さは線径の１／１０
    〜３／１０に形成してなる特許請求の範囲第２項記載の
    半導体素子結線用細線。
JP61132565A 1986-06-06 1986-06-06 半導体素子結線用細線 Granted JPS62287634A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61132565A JPS62287634A (ja) 1986-06-06 1986-06-06 半導体素子結線用細線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61132565A JPS62287634A (ja) 1986-06-06 1986-06-06 半導体素子結線用細線

Publications (2)

Publication Number Publication Date
JPS62287634A true JPS62287634A (ja) 1987-12-14
JPH0319702B2 JPH0319702B2 (ja) 1991-03-15

Family

ID=15084274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61132565A Granted JPS62287634A (ja) 1986-06-06 1986-06-06 半導体素子結線用細線

Country Status (1)

Country Link
JP (1) JPS62287634A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011243659A (ja) * 2010-05-14 2011-12-01 Furukawa Electric Co Ltd:The 平角銅線及びその製造方法、並びに太陽電池用平角銅線及びその製造方法
WO2012022404A2 (de) * 2010-07-22 2012-02-23 W.C. Heraeus Gmbh & Co. Kg Kern-mantel-bändchendraht
JP2015159341A (ja) * 2015-06-11 2015-09-03 日立金属株式会社 銅ボンディングワイヤ
WO2020071002A1 (ja) * 2018-10-01 2020-04-09 富山住友電工株式会社 めっき線材の製造方法およびめっき線材の製造装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011243659A (ja) * 2010-05-14 2011-12-01 Furukawa Electric Co Ltd:The 平角銅線及びその製造方法、並びに太陽電池用平角銅線及びその製造方法
WO2012022404A2 (de) * 2010-07-22 2012-02-23 W.C. Heraeus Gmbh & Co. Kg Kern-mantel-bändchendraht
WO2012022404A3 (de) * 2010-07-22 2012-06-28 W.C. Heraeus Gmbh & Co. Kg Kern-mantel-bändchendraht
US9236166B2 (en) 2010-07-22 2016-01-12 Heraeus Deutschland GmbH & Co. KG Core-jacket bonding wire
EP3425665A1 (de) * 2010-07-22 2019-01-09 Heraeus Deutschland GmbH & Co KG Verfahren zur herstellung eines bonddrahtes
JP2015159341A (ja) * 2015-06-11 2015-09-03 日立金属株式会社 銅ボンディングワイヤ
WO2020071002A1 (ja) * 2018-10-01 2020-04-09 富山住友電工株式会社 めっき線材の製造方法およびめっき線材の製造装置

Also Published As

Publication number Publication date
JPH0319702B2 (ja) 1991-03-15

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