JPH0794556A - ワイヤボンデイング方法 - Google Patents
ワイヤボンデイング方法Info
- Publication number
- JPH0794556A JPH0794556A JP5257644A JP25764493A JPH0794556A JP H0794556 A JPH0794556 A JP H0794556A JP 5257644 A JP5257644 A JP 5257644A JP 25764493 A JP25764493 A JP 25764493A JP H0794556 A JPH0794556 A JP H0794556A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- capillary
- bond point
- point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
向上を図る。 【構成】第2ボンド点2aへのボンデイング時の超音波
振動印加と同時にキヤピラリ4をルーピング方向に移動
させる。
Description
ド点との間をワイヤで接続するワイヤボンデイング方法
に関する。
ワイヤボンデイング工程がある。この工程により、図2
に示すように、ペレット1のパッド(第1ボンド点)1
aとリードフレーム2のリード(第2ボンド点)2aに
ワイヤ3が接続される。なお、矢印Aはルーピング方向
を示す。
ヤボンデイング方法には、種々の方法が提案されている
が、最も一般的な方法を図3に示す。図3において、ま
ず、(a)に示すように、キヤピラリ4の下端より延在
するワイヤ3に電気トーチ5による火花放電によってボ
ール3aを作る。その後、電気トーチ5は矢印方向へ移
動する。次に(b)に示すように、キヤピラリ4は第1
ボンド点1aの上方に移動する。続いて(c)に示すよ
うに、キヤピラリ4が下降し、ワイヤ3の先端のボール
3aを第1ボンド点1aに押し付け、キヤピラリ4を保
持するホーンにより該キヤピラリ4に超音波振動を印加
してボール3aをボンデイングする。
4は上昇する。続いて(e)に示すように、キヤピラリ
4はルーピング方向Aの第2ボンド点2aの上方に移動
する。次に(f)に示すように、キヤピラリ4が下降し
て第2ボンド点2aにワイヤ3を押し付け、ホーンによ
りキヤピラリ4に超音波振動を印加してワイヤ3をボン
デイングする。その後、キヤピラリ4が一定の位置へ上
昇した後、クランパ6が閉じ、キヤピラリ4とクランパ
6が共に上昇して(g)に示すようにワイヤ3を切断す
る。これにより、1本のワイヤ接続が完了する。なお、
この種のワイヤボンデイング方法に関連するものとし
て、例えば特開昭57−87143号公報、特公平1−
26531号公報等があげられる。
ボンデイング方法では、第2ボンド点2aへのボンデイ
ングにおける超音波振動印加時にワイヤ3が第1ボンド
点1a側に押し出され、ワイヤ曲がりが発生し、ルーピ
ング直線性(第1ボンド点から第2ボンド点に張られた
ワイヤを平面より見た形状)が悪くなる。また第2ボン
ド点2a側は、一般にリードであり、リード幅が細く、
またリード表面状態が悪い(ペースト等により汚染酸化
等している)場合には、超音波振動印加だけではボンデ
イング性(着き性)が悪く、安定的なボンデイング性能
が得られない。
及びボンデイング性の向上が図れるワイヤボンデイング
方法を提供することにある。
の本発明の構成は、第1ボンド点と第2ボンド点との間
をワイヤで接続するワイヤボンデイング方法において、
第2ボンド点へのボンデイング時の超音波振動印加と同
時にキヤピラリをルーピング方向に移動させることを特
徴とする。
ピラリを移動させると、ワイヤを第1ボンド点方向に押
し戻すのが抑えられ、直線性の良いルーピングが得られ
る。またワイヤを押し付けた状態でキヤピラリを移動さ
せるので、第2ボンド点のリードとワイヤとの接合強度
が上がり、リード表面状態の悪い場合や細いリードも安
定した接合強度が得られる。
ら図1により説明する。なお、本発明は、第2ボンド点
2aにワイヤをボンデイングする時における課題を解決
するものであるので、第1ボンド点1aから第2ボンド
点2aまでキヤピラリ4を移動させる軌跡については、
その説明を省略する。即ち、第1ボンド点1aから第2
ボンド点2aまでにキヤピラリ4を移動させる軌跡は、
どのような軌跡でもよい。
ラリ4で第2ボンド点2aに押し付け、この押し付けた
状態でキヤピラリ4に超音波振動印加と同時に、ルーピ
ング方向Aにキヤピラリ4を僅かに(ΔL=2.5〜2
0μm)移動させてボンデイングする。第2ボンド点2
aのボンデイング完了後は、従来と同様に、キヤピラリ
4が一定の位置へ上昇した後、クランパ6が閉じ、キヤ
ピラリ4とクランパ6が共に上昇してワイヤ3を切断す
る。
ピング方向Aにキヤピラリ4をΔLだけ移動させると、
ワイヤ3を第1ボンド点1a方向に押し戻すのが抑えら
れ、直線性の良いルーピングが得られる。またワイヤ3
を押し付けた状態でキヤピラリ4を移動させるので、第
2ボンド点2aのリードとワイヤ3との接合強度が上が
り、リード表面状態の悪い場合や細いリードも安定した
接合強度が得られる。
デイング時の超音波振動印加と同時にキヤピラリをルー
ピング方向に移動させるので、ルーピング直線性の向上
及びボンデイング性の向上が図れる。
例を示すワイヤ接続状態図である。
る。
(a)乃至(g)は工程図である。
の本発明の構成は、第1ボンド点と第2ボンド点との間
をワイヤで接続するワイヤボンデイング方法において、
第2ボンド点へのボンデイング時の超音波振動印加と同
時にキヤピラリを第1ボンド点と反対方向に移動させる
ことを特徴とする。
印加と同時に第1ボンド点と反対方向にキヤピラリを移
動させると、ワイヤを第1ボンド点方向に押し戻すのが
抑えられ、直線性の良い第1ボンド点と反対が得られ
る。またワイヤを押し付けた状態でキヤピラリを移動さ
せるので、第2ボンド点のリードとワイヤとの接合強度
が上がり、リード表面状態の悪い場合や細いリードも安
定した接合強度が得られる。
ラリ4で第2ボンド点2aに押し付け、この押し付けた
状態でキヤピラリ4に超音波振動印加と同時に、第1ボ
ンド点1aと反対方向Aにキヤピラリ4を僅かに(ΔL
=2.5〜20μm)移動させてボンデイングする。第
2ボンド点2aのボンデイング完了後は、従来と同様
に、キヤピラリ4が一定の位置へ上昇した後、クランパ
6が閉じ、キヤピラリ4とクランパ6が共に上昇してワ
イヤ3を切断する。
ボンド点1aと反対方向Aにキヤピラリ4をΔLだけ移
動させると、ワイヤ3を第1ボンド点1a方向に押し戻
すのが抑えられ、直線性の良いルーピングが得られる。
またワイヤ3を押し付けた状態でキヤピラリ4を移動さ
せるので、第2ボンド点2aのリードとワイヤ3との接
合強度が上がり、リード表面状態の悪い場合や細いリー
ドも安定した接合強度が得られる。
デイング時の超音波振動印加と同時にキヤピラリを第1
ボンド点と反対方向に移動させるので、ルーピング直線
性の向上及びボンデイング性の向上が図れる。 ─────────────────────────────────────────────────────
印加と同時に第1ボンド点と反対方向にキヤピラリを移
動させると、ワイヤを第1ボンド点方向に押し戻すのが
抑えられ、直線性の良いルーピングが得られる。またワ
イヤを押し付けた状態でキヤピラリを移動させるので、
第2ボンド点のリードとワイヤとの接合強度が上がり、
リード表面状態の悪い場合や細いリードも安定した接合
強度が得られる。
Claims (1)
- 【請求項1】 第1ボンド点と第2ボンド点との間をワ
イヤで接続するワイヤボンデイング方法において、第2
ボンド点へのボンデイング時の超音波振動印加と同時に
キヤピラリをルーピング方向に移動させることを特徴と
するワイヤボンデイング方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05257644A JP3128718B2 (ja) | 1993-09-21 | 1993-09-21 | ワイヤボンデイング方法 |
KR1019940017274A KR0161548B1 (ko) | 1993-09-21 | 1994-07-18 | 와이어 본딩방법 |
US08/309,937 US5524811A (en) | 1993-09-21 | 1994-09-21 | Wire bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05257644A JP3128718B2 (ja) | 1993-09-21 | 1993-09-21 | ワイヤボンデイング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0794556A true JPH0794556A (ja) | 1995-04-07 |
JP3128718B2 JP3128718B2 (ja) | 2001-01-29 |
Family
ID=17309112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05257644A Expired - Fee Related JP3128718B2 (ja) | 1993-09-21 | 1993-09-21 | ワイヤボンデイング方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5524811A (ja) |
JP (1) | JP3128718B2 (ja) |
KR (1) | KR0161548B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100479919B1 (ko) * | 1997-12-29 | 2005-05-16 | 삼성테크윈 주식회사 | 와이어본딩헤드의와이어루프형성방법 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8033838B2 (en) | 1996-02-21 | 2011-10-11 | Formfactor, Inc. | Microelectronic contact structure |
KR100263253B1 (ko) * | 1998-02-23 | 2001-01-15 | 송희 | 폐 유리병을 이용한 아트유리패널 제조방법 |
JP4176292B2 (ja) * | 2000-07-27 | 2008-11-05 | 株式会社新川 | シングルポイントボンディング装置 |
KR100403756B1 (ko) * | 2001-02-12 | 2003-10-30 | 송 희 | 폐유리를 이용한 장식용 유리판재의 제조방법 |
JP4467631B1 (ja) | 2009-01-07 | 2010-05-26 | 株式会社新川 | ワイヤボンディング方法 |
WO2013111452A1 (ja) * | 2012-01-26 | 2013-08-01 | 株式会社新川 | 酸化防止ガス吹き出しユニット |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5787143A (en) * | 1980-11-19 | 1982-05-31 | Shinkawa Ltd | Method for wire bonding |
JPH0228587B2 (ja) * | 1987-07-22 | 1990-06-25 | Nippon Light Metal Co | Shibosankuroraidonoseizohoho |
US5111989A (en) * | 1991-09-26 | 1992-05-12 | Kulicke And Soffa Investments, Inc. | Method of making low profile fine wire interconnections |
-
1993
- 1993-09-21 JP JP05257644A patent/JP3128718B2/ja not_active Expired - Fee Related
-
1994
- 1994-07-18 KR KR1019940017274A patent/KR0161548B1/ko not_active IP Right Cessation
- 1994-09-21 US US08/309,937 patent/US5524811A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100479919B1 (ko) * | 1997-12-29 | 2005-05-16 | 삼성테크윈 주식회사 | 와이어본딩헤드의와이어루프형성방법 |
Also Published As
Publication number | Publication date |
---|---|
KR950009995A (ko) | 1995-04-26 |
KR0161548B1 (ko) | 1999-02-01 |
US5524811A (en) | 1996-06-11 |
JP3128718B2 (ja) | 2001-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3854232B2 (ja) | バンプ形成方法及びワイヤボンディング方法 | |
US20070029367A1 (en) | Semiconductor device | |
JPH11121543A (ja) | チップスケールパッケージ | |
JPH0794556A (ja) | ワイヤボンデイング方法 | |
JP3129169B2 (ja) | 半導体装置及びその製造方法 | |
JPH04255237A (ja) | 半導体装置の製造方法 | |
JPH0357236A (ja) | 樹脂封止型半導体装置の製造方法 | |
JPS63244633A (ja) | ワイヤボンデイング方法 | |
JPH0512855B2 (ja) | ||
JPH0428241A (ja) | 半導体装置の製造方法 | |
JPH05267385A (ja) | ワイヤーボンディング装置 | |
JP2846095B2 (ja) | 半導体装置の製造方法 | |
JP2789395B2 (ja) | ワイヤボンデイング方法 | |
JP2000106381A (ja) | 半導体装置の製造方法 | |
JP2912128B2 (ja) | キャピラリおよびリードフレームならびにそれらを用いたワイヤボンディング方法 | |
JPH0684993A (ja) | 半導体装置 | |
JPH0590320A (ja) | ボール式ワイヤーボンデイング方法 | |
JPS6379331A (ja) | ワイヤボンデイング装置 | |
JPH10199913A (ja) | ワイヤボンディング方法 | |
JPH04196236A (ja) | 接続方法 | |
JPS5944836A (ja) | ワイヤ−ボンデイング方法 | |
JPH0568101B2 (ja) | ||
JPS61140142A (ja) | ボンデイング方法 | |
JP2000188303A (ja) | ボールボンディング方法 | |
JPS6316632A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20001002 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081117 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091117 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101117 Year of fee payment: 10 |
|
LAPS | Cancellation because of no payment of annual fees |