JP4713149B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4713149B2 JP4713149B2 JP2004382074A JP2004382074A JP4713149B2 JP 4713149 B2 JP4713149 B2 JP 4713149B2 JP 2004382074 A JP2004382074 A JP 2004382074A JP 2004382074 A JP2004382074 A JP 2004382074A JP 4713149 B2 JP4713149 B2 JP 4713149B2
- Authority
- JP
- Japan
- Prior art keywords
- ppm
- ball
- mass
- wire
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01031—Gallium [Ga]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01041—Niobium [Nb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01043—Technetium [Tc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01044—Ruthenium [Ru]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01076—Osmium [Os]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/011—Groups of the periodic table
- H01L2924/01105—Rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
このようなチップ電極パッドの大きさが縮小される背景から、接続すべき外部接続電極の密度が飛躍的に高まりつつある。そのためボール・ボンディングするためのパッドの接合領域やパッドのピッチ間隔は狭小化されている。この狭小化に対応するため極細線の線径を細くすることによって極細線のボール径を小さくすることが考えられてきた。しかしながら、ボール径が微小になればなるほど、Auボールの高真球度が必要とされる。これまでの100μm角Alパッドの場合には、Auボールが多少いびつになることがあっても、あるいは、Alパッド上へ溶け拡がりの生じることがあっても、Alパッドが広いので問題にはならなかった。しかし、Alパッドが60μm角へと小さくなると、これまで許容されていた多少のいびつさやわずかな溶け拡がりまでが問題になってきた。更には、Alパッドへのボール・ボンディング時における圧着ボール径の形状の安定性を確保したり、狭小な接合領域への接合性を確保したりすることも重要である。
(1)純度99.99質量%以上のAuからなる極細線が酸化性雰囲気下でAlパッドへボール・ボンディングされた半導体装置において、該接合されたAuボールの最大直径が極細線の線径の2倍以下であり、かつ、そのボール部の表層として8nm〜20nm厚の微量添加元素の酸化物層が形成されていることを特徴とする半導体装置。
(2)極細線の線径が25μm以下である前記(1)に記載の半導体装置。
(3)Auボールの最大直径が50μm以下である前記(1)または(2)に記載の半導体装置。
(4)微量添加元素の酸化物層が極細線の表面から中心方向へ連続的に濃度が減少している前記(1)〜(3)のいずれかに記載の半導体装置。
(5)微量添加元素が低融点金属Aである前記(1)〜(4)のいずれかに記載の半導体装置。
(6)低融点金属Aが、In、Sn、Bi、Pb、SbおよびGaの中から選ばれる少なくとも1種である前記(5)に記載の半導体装置。
(7)微量添加元素が、その酸化物の標準生成自由エネルギーが炭素の標準生成自由エネルギーよりも低い金属Bである前記(1)〜(4)のいずれかに記載の半導体装置。
(8)金属BがCa、Be、Mg、MnおよびCeの中から選ばれる少なくとも1種である前記(7)に記載の半導体装置。
(9)微量添加元素が低融点金属Aおよび金属Bの双方を含有している前記(1)〜(4)のいずれかに記載の半導体装置。
(10)低融点金属AがIn、Sn、Bi、Pb、SbおよびGaの中から選ばれる少なくとも1種であり、金属Bが、Ca、Be、Mg、MnおよびCeの中から選ばれる少なくとも1種である前記(9)に記載の半導体装置。
本発明において用いる好ましい金属Aは、In、SnおよびBiである。
本発明において用いる好ましい金属Bは、Be、CaおよびMgである。
金属Aと金属Bの好ましい組合せは、In/Ca、Sn/Be、In/Sn/Ca等である。
Auボールの最大直径は、ボール・ボンディングに用いる極細線の直径の2倍以下、好ましくは1.8倍以下であり、その下限値は、通常、1.4倍である。該極細線の線径は、好ましくは10〜25μm、特に15〜25μmである。
Auボールの最大直径は、通常、50μm以下、好ましくは、45μm以下であり、その下限値は、通常35μmである。
純度99.999重量%の高純度金に微量金属として表1に記載の数値(質量ppm)になるように配合した実施品の成分組成を添加し、真空溶解炉で溶解鋳造した。これを伸線加工して、線径が25μmのところで最終熱処理し、伸び率を4%に調整した。この極細線を60μm角のAlパッド上へ大気中で次の条件下でボール・ボンディングしたところ、すべてのボールが60μm角のAlパッド内に形成されていた。その結果を表1の右欄に示す。
ボール・ボンディング条件:
(1)ボンダー:一般に市販されているワイヤボンダー
(2)キャピラリー:一般汎用のセラミック製キャピラリー
(3)ボンディング温度:200℃
(4)初期ボール狙い:38μm
(5)圧着ボール径:45±5μm
(6)圧着ボール厚:8±4μm
(7)ボンディング総数:100ワイヤ
接合ボールの上面に半球状の酸化物の殻が形成されていたので、表面酸化した半球状の酸化物の代表的な殻についてバーキンエルマー社製オージェ電子分光分析装置によって毎分5nmのスパッタ速度でその表面から中心方向への酸化物濃度を調べたところ、表1の右欄の結果を得た。
純度99.999重量%の高純度金に微量金属として表の左欄に記載の比較品の成分組成を添加し、真空溶解炉で溶解鋳造した。これを実施例1と同様にしてAlパッド上へ大気中でボール・ボンディングし、表2の右欄の結果を得た。
また、実施例2と同様にして酸化物濃度を調べたところ、表2の右欄の結果を得た。
なお、表1および表2において、金属Aは低融点金属を示し、金属Bは酸化物の標準生成エネルギーが炭素の標準生成エネルギーよりも低い金属を示す。
ここで、「圧着ボール径」は、オリンパス社製の測長顕微鏡を用い、N=40で測定した平均値である。「X/Y」の判定基準は、測定値が0.98未満のものをバツ(×)とし、0.99以上のものをマル(○)とした。「Cpk」は圧着ボール径の規格(45μm/5μm)を示し、Cpkが1.33未満のものをバツ(×)とし、Cpkが1.33以上のものをマル(○)とした。「シェア強度」は、DAGE社製の万能ボンドテスターBT−2400を用い、3μmのステップバックと毎秒125μmのシェア速度、N=40で測定したシェア荷重を圧着ボール径の面積で割り、単位面積あたりの接合強度で判断した。この値が10kgf/mm2未満のものをバツ(×)とし、10kgf/mm2以上のものをマル(○)とした。「Au−Al」はAu−Al合金の合金化率を示し、ボンディングしたサンプルを塩基性水溶液中にて溶解して接合面を露出させた後、日本電子社製の走査型電子顕微鏡JSM−5900LVで1、000倍の倍率で観察し、N=5で測定した。この測定値が70%未満のものをバツ(×)とし、70%以上のものをマル(○)とした。
Claims (3)
- 純度99.99質量%以上のAuからなる25μm以下の極細線が酸化雰囲気下でAlパッドへボール・ボンディングされた半導体装置において、
該極細線の微量添加元素として
In:10〜40質量ppm、Sn:10〜40質量ppm、Pb:10〜40質量ppm、Sb:10〜40質量ppm、Ga:10〜40質量ppmから選択した1種以上を合計で10〜50質量ppm含有し、
該接合されたAuボールの最大直径が50μm以下であり、かつ、そのボール部の表層として8nm〜20nm厚の微量添加元素の酸化物層が形成されている
ことを特徴とする半導体装置。 - 純度99.99質量%以上のAuからなる25μm以下の極細線が酸化雰囲気下でAlパッドへボール・ボンディングされた半導体装置において、
該極細線の微量添加元素として
Ca:10〜40質量ppm、Be:5〜40質量ppm、Mg:10〜40質量ppm、Mn:10〜40質量ppm、Ce:10〜40質量ppmから選択した1種以上を合計で5〜50質量ppm含有し、
該接合されたAuボールの最大直径が50μm以下であり、かつ、そのボール部の表層として8nm〜20nm厚の微量添加元素の酸化物層が形成されている
ことを特徴とする半導体装置。 - 純度99.99質量%以上のAuからなる25μm以下の極細線が酸化雰囲気下でAlパッドへボール・ボンディングされた半導体装置において、
該極細線の微量添加元素として、
In:10〜40質量ppm、Sn:10〜40質量ppm、Pb:10〜40質量ppm、Sb:10〜40質量ppm、Ga:10〜40質量ppmのグループ、
およびCa:10〜40質量ppm、Be:5〜40質量ppm、Mg:10〜40質量ppm、Mn:10〜40質量ppm、Ce:10〜40質量ppmのグループ、
からそれぞれ選択した1種以上を合計で10〜100質量ppm含有し、
該接合されたAuボールの最大直径が50μm以下であり、かつ、そのボール部の表層として8nm〜20nm厚の微量添加元素の酸化物層が形成されている
ことを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004382074A JP4713149B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004382074A JP4713149B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006190719A JP2006190719A (ja) | 2006-07-20 |
JP4713149B2 true JP4713149B2 (ja) | 2011-06-29 |
Family
ID=36797669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004382074A Expired - Fee Related JP4713149B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4713149B2 (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6160841A (ja) * | 1984-08-29 | 1986-03-28 | Sumitomo Metal Mining Co Ltd | ボンデイングワイヤ− |
JPS62228440A (ja) * | 1986-03-28 | 1987-10-07 | Matsuda Kikinzoku Kogyo Kk | 半導体素子ボンデイング用金線 |
JPS63145729A (ja) * | 1986-03-28 | 1988-06-17 | Nittetsu Micro Metal:Kk | 半導体素子ボンデイング用金線 |
JPH02215140A (ja) * | 1989-02-16 | 1990-08-28 | Mitsubishi Metal Corp | 半導体素子用金合金細線及びその接合方法 |
JPH05179376A (ja) * | 1992-01-06 | 1993-07-20 | Nippon Steel Corp | ボンディング用金合金細線 |
JPH104114A (ja) * | 1996-06-17 | 1998-01-06 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JP2000040710A (ja) * | 1998-07-24 | 2000-02-08 | Sumitomo Metal Mining Co Ltd | ボンディング用金合金細線 |
JP2000299346A (ja) * | 1999-04-16 | 2000-10-24 | Nippon Steel Corp | 半導体実装用のボンディングワイヤ |
-
2004
- 2004-12-28 JP JP2004382074A patent/JP4713149B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6160841A (ja) * | 1984-08-29 | 1986-03-28 | Sumitomo Metal Mining Co Ltd | ボンデイングワイヤ− |
JPS62228440A (ja) * | 1986-03-28 | 1987-10-07 | Matsuda Kikinzoku Kogyo Kk | 半導体素子ボンデイング用金線 |
JPS63145729A (ja) * | 1986-03-28 | 1988-06-17 | Nittetsu Micro Metal:Kk | 半導体素子ボンデイング用金線 |
JPH02215140A (ja) * | 1989-02-16 | 1990-08-28 | Mitsubishi Metal Corp | 半導体素子用金合金細線及びその接合方法 |
JPH05179376A (ja) * | 1992-01-06 | 1993-07-20 | Nippon Steel Corp | ボンディング用金合金細線 |
JPH104114A (ja) * | 1996-06-17 | 1998-01-06 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JP2000040710A (ja) * | 1998-07-24 | 2000-02-08 | Sumitomo Metal Mining Co Ltd | ボンディング用金合金細線 |
JP2000299346A (ja) * | 1999-04-16 | 2000-10-24 | Nippon Steel Corp | 半導体実装用のボンディングワイヤ |
Also Published As
Publication number | Publication date |
---|---|
JP2006190719A (ja) | 2006-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3969671B2 (ja) | Au合金ボンディング・ワイヤ | |
JPH04174527A (ja) | 半導体材料の接続方法,それに用いる接続材料及び半導体装置 | |
JPS6238414B2 (ja) | ||
JP4482605B1 (ja) | 高純度Cuボンディングワイヤ | |
US6063213A (en) | High-purity hard gold alloy and method of manufacturing same | |
WO2011118009A1 (ja) | 高純度Cuボンディングワイヤ | |
JP2737953B2 (ja) | 金バンプ用金合金細線 | |
JPH0379416B2 (ja) | ||
JP4713149B2 (ja) | 半導体装置 | |
TWI270950B (en) | Wire bump materials | |
WO1994024323A1 (en) | Gold-alloy bonding wire | |
JPS62104061A (ja) | 半導体素子用ボンデイング線およびその製造方法 | |
JP2778093B2 (ja) | 金バンプ用金合金細線 | |
JPH1167811A (ja) | 半導体素子用金銀合金細線 | |
JPH0726167B2 (ja) | 半導体装置のボンデイングワイヤ用Au合金極細線 | |
JP2003059964A (ja) | ボンディングワイヤ及びその製造方法 | |
JP2745065B2 (ja) | 半導体素子用ボンディングワイヤ | |
JP3356082B2 (ja) | 半導体装置のボンディング用金合金細線 | |
JP2000150562A (ja) | 半導体装置のボンディング用金合金細線 | |
JP6898705B2 (ja) | ボールボンディング用銅合金細線 | |
JPS6223455B2 (ja) | ||
JPH1167812A (ja) | 半導体素子用金銀合金細線 | |
JP2003133364A (ja) | 銅ボールの熱圧着方法 | |
WO2007111248A1 (ja) | 半導体素子接続用金線 | |
JPH06145842A (ja) | ボンディング用金合金細線 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071004 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20071004 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080313 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100727 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100927 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101028 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101224 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110224 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110324 |
|
LAPS | Cancellation because of no payment of annual fees |