JPH04174527A - 半導体材料の接続方法，それに用いる接続材料及び半導体装置 - Google Patents

半導体材料の接続方法，それに用いる接続材料及び半導体装置

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Publication number
JPH04174527A
JPH04174527A JP2304509A JP30450990A JPH04174527A JP H04174527 A JPH04174527 A JP H04174527A JP 2304509 A JP2304509 A JP 2304509A JP 30450990 A JP30450990 A JP 30450990A JP H04174527 A JPH04174527 A JP H04174527A
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JP
Japan
Prior art keywords
ball
wiring
alloy
semiconductor material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2304509A
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English (en)
Other versions
JP2891432B2 (ja
Inventor
Toshinori Kogashiwa
俊典 小柏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
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Publication of JPH04174527A publication Critical patent/JPH04174527A/ja
Application granted granted Critical
Publication of JP2891432B2 publication Critical patent/JP2891432B2/ja
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Expired - Lifetime legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/268—Pb as the principal constituent
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体材料の接続方法、詳しくはワイヤレスボ
ンディング法、特にフリップチップボンディング法また
はテープキャリアボンディング法により半導体チップ等
の半導体材料を基板にボンディングする際の接続方法、
それに用いる接続材料及びこの接続方法により製造され
る半導体装置に関する。
（従来の技術） 従来、ワイヤボンダにより形成されるバンプ電極を用い
た半導体材料の接続方法及びそれに用いる接続材料とし
て、例えば特開昭６３−３０１５３５号公報に開示され
る如（ｐｔ）、Ｓｎ、Ｉｎの何れか１つを主要元素とし
て、かつ急冷凝固法により作製された細い合金ワイヤー
の先端を加熱してボールを形成し該ボールを基板の配線
上面又は半導体材料の配線上面に接着させた状態で合金
ワイヤーを引張ることにより、ボールがその根本部から
切断されて基板の配線上面又は半導体材料の配線上面に
バンプ電極を形成せしめ、そのバンプ電極を介して半導
体材料を接続する方法と、Ｐｂ。
Ｓｎ、Ｉｎの何れか一つを主要元素とし、それに添加元
素を配合した合金を急冷凝固法により細い合金ワイヤー
状に作製して、ワイヤーボンダを用いたバンプ電極の形
成に特に有用なものがある。
ところで近年、半導体チップの配線材料にはエレクトロ
マイグレーションを抑制し、配線の信頼性を改善する等
の点からＡｌ−３ｉ、　ＡＡ　−Ｃｕ−８ｉ等のＡｌ合
金がしばしば用いられるようになっている。
（発明が解決しようとする課題） しかし乍ら、このような従来の半導体材料の接続方法で
は、ボールを半導体材料の配線上面又は基板の配線上面
に直接接着させるが、これら配線がＡｌ合金の場合には
ＣｕＣ１２、ＺｎＣｌ　２゜ＮＨ４Ｃｌ、５ｎＣ１２，
ＨＣＩ等を含有したフラックス中で加熱して、Ａｌ合金
の表面に形成される酸化物を除去しなければ、Ａｌ合金
配線上に直接バンプ電極を形成することはできず、工程
が増えて時間を要するだけでなくコスト高になるという
問題がある。
本発明は斯る従来事情に鑑み、急冷凝固法により作製さ
れた合金ワイヤーを用いてＡＩ！合金配線上に直接バン
プ電極を接合することを目的とする。
（課題を解決するための手段） 上記課題を達成するために本発明が講する技術的手段は
、半導体材料の接続方法が、Ｐ　ｂ、’　Ｓ　ｎ。
Ｉｎの何れか一つを主要元素として、かつ急冷凝固法に
より作製された細い合金ワイヤーの先端を加熱してブリ
ネル硬度が６以上の硬さを有するボールを形成し、該ボ
ールを半導体材料のＡＡ’合金配線上面又は基板のＡｌ
合金配線上面に接着させた状態で合金ワイヤーを引張る
ことにより、ボールがその根本部から切断されて半導体
材料のＡｌ合金配線上面又は基板のＡｌ合金配線上面に
バンプ電極を形成せしめ、そのバンプ電極を介して半導
体材料を基板に接続することを特徴とする。
そして、半導体材料の接続材料が、Ｐｂ、　　Ｓｎ。
ｉｎの何れか１つを主要元素とし、それに添加元素を配
合した合金を急冷凝固法により細いワイヤー状に作製し
、該合金ワイヤーの先端を加熱してブリネル硬度が６以
上の硬さを有するボールを形成してなることを特徴とす
る。
また、上記添加元素がＢｅ、　　Ｂ、　　Ｃ，Ｍｇ。
ＡＩ、　　Ｓｉ、　　Ｐ、　　Ｃａ、　Ｔｉ、　Ｖ、　
　Ｃｒ、　Ｍｎ。
Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ、Ｇａ、Ｇｅ。
Ｓｅ、　　Ｚｒ、　Ｎｂ、　Ｍｏ、　　Ｐｄ、　Ａｇ、
　　Ｃｄ。
Ｉｎ、　　Ｓｎ、　　Ｐｂ、　　Ｓｂ、　Ｔｅ、　　Ｉ
ｒ、　　Ｐｔ。
Ａｕ、Ｔｌ、Ｂｉ中の１種又は２種以上であることが好
ましい。
更に、半導体装置が、半導体装置本体の半導体材料を、
Ｐｂ、Ｓｎ、Ｉｎの何れか一つを主要元素として、かつ
急冷凝固法により作製された細い合金ワイヤーの先端に
加熱形成したボールからなるバンプ電極を介して基板に
電気的に接続して形成されたものにおいて、前記半導体
材料の配線又は基板の配線をＡｌ合金により形成すると
共に、ボールの硬度を６以上の硬さにしたことを特徴と
する。
また、上記合金ワイヤーが主要元素に添加元素を配合し
た合金材料であり、この添加元素がＢｅ。
Ｂ、Ｃ，Ｍｇ、ＡＩ、Ｓ　ｉ、ｐ、Ｃａ、Ｔｉ、ｖ。
Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ。
Ｇａ、Ｇｅ、Ｓｅ、Ｚｒ、Ｎｂ、Ｍｏ、Ｐｄ。
Ａｇ、Ｃｄ、Ｉｎ、Ｓｎ、Ｐｂ、Ｓｂ、Ｔｅ。
Ｉｒ、Ｐｔ、Ａｕ、Ｔｌ、Ｂｉ中の１種又は２種以上で
あることが好ましい。
（作用） 本発明は上記技術的手段によれば、ＨＢ　６以上の硬さ
を有するはんだボールが、通常Ｈ０１２程度のＡｌ合金
配線上の表面酸化膜を破壊し、Ａ／合金配線新生面とは
んだボール新生面の間で拡散が起り、金属学的接合がな
されるをもって、合金ワイヤーの先端に形成したボール
を直接Ａｌ合金配線上に接合させるものである。
（実施例） 以下、本発明の一実施例を図面に基づいて説明する。
この実施例は第１図に示す如く半導体装置本体Ａが、基
板１の上面に例えばＣｕ配線にＳｎ又はＡｕメツキされ
る配線１２を配設し、この基板１の中央部に半導体材料
としての半導体チップ２を搭載して、その表面に形成さ
れたＡｌ−８ｉ又はＡｌ−Ｃｕ−８ｉ等からなるＡｌ合
金配線２２と、上記基板１の配線１１！とがバンプ電極
３ｂを介して電気的に接続されると共に、半導体チップ
２と基板１の配線１ａの一部とがシリコン等の保護樹脂
６で封止される所謂フリップチップボンディング型であ
り、更に第２図〜第５図に示す如く接続材料としての合
金ワイヤー３から供給されるボール３ａを、先ず半導体
チップ２のＡｎ合金配線２ａ上面に接合させるものであ
る。
上記合金ワイヤー３ははんだ材料、即ちＰｂ。
Ｓｎ、Ｉｎの何れか１つを主要元素とし、それに添加元
素を配合せしめた合金であり、かつ急冷凝固法により作
製された細線である。
合金ワイヤー３の添加元素としては、Ｂｅ、Ｂ。
Ｃ，Ｍｇ、ＡＩ、Ｓｉ、Ｐ、Ｃａ、Ｔｉ、Ｖ。
Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ。
Ｇａ、Ｇｅ、Ｓｅ、Ｚｒ、Ｎｂ、Ｍｏ、Ｐｄ。
Ａｇ、Ｃｄ、Ｓｂ、Ｔｅ、Ｉｒ、Ｐｔ、Ａｕ。
ＴＡ’、Ｂｉ中の１種又は２種以上を配合せしめ、また
主要元素Ｐｂ、Ｓｎ、Ｉｎをそれを含まない主要元素中
に添加することもよい。
この合金ワイヤー３は前記急冷処理によって多くの格子
欠陥が導入され、結晶粒が微細化して非平衡相が生成さ
れ、元素相互間に強制固溶が生じた組織状態にあり、更
に線引き加工によって加工硬化に伴う格子欠陥が導入さ
れ、添加元素によって固溶硬化した組織状態にある。
そして得られた合金ワイヤー３を第２図に示す如くキャ
ピラリ４に挿通して、その先端を電気トーチ５で加熱す
ることにより、Ｈ，（ブリネル硬度）が６以上の硬さを
有するボール３ａを形成する。
次に、第３図に示す如くキャピラリ４を下降させて合金
ワイヤー３先端に形成されたボール３ａを、半導体チッ
プ３上に形成されたＡＩ合金配線２ａ上面に付着させる
。
この時、ボール３ａかＨｅ６以上の硬さを有することに
より、通常ＨＩ１１２程度のＡＩ合金配線２ａ上面の表
面酸化物を破壊し、Ａｌ合金配線２ａの新生面とボール
３ａ新生面の間で拡散が起り金属学的接合がなされるを
もって、ホール３ａがＡＩ合金配線２ａ上面に直接接合
する。
更に、第４図に示す如くボール３ａをＡｌ合金配線２２
に付着させた状態でキャピラリ４を引き上げることによ
り、ボール３ａの根本部で合金ワイヤー３から切断され
ＡＩ合金配線２ａ上面にボール３ａが供給されてバンプ
電極３ｂが形成される。
上記合金ワイヤー３の切断はボール３ｂを加熱形成した
際に、ボール３ｂの根本部において前記非平衡相が消失
し、元素相互間の強制固溶か解放して格子欠陥が解放し
、結晶粒が粗大化した組織状態となっているため、その
部分の引張り強度が減少し、キャピラリ４により合金ワ
イヤー３を引き上げるだけでボール３ｂがその根本部で
降伏、破断することによって起こる。
次に、第５図に示す如＜Ａｌ合金配線２ａ上面に付着さ
れたバンプ電極３ｂを、基板１の上面に形成された配線
１ａに直接当接させて熱圧着することにより、Ａｌ合金
配線２λと基板１の配線１ａとが電気的に接続されると
共に、半導体チップ２が取付けられる。
また、上記バンプ電極３ｂを、基板上面の配線１ａに接
続する前に塩化物又はヨウ化物系のフラックス中にて加
熱溶融（リフロー）シ、ボール３ｂの真球度をより向上
させることもできるが、リフローせずに直接接続しても
所期の目的を達成することは可能である。
更に、第６図に示すものは本発明の他の実施例であり、
このものは半導体装置本体Ａが、半導体材料としての半
導体チップ２のＡｌ合金配線２ａ上にバンプ電極３ｂを
形成し、これに例えばＣｕ箔にＳｎ又はＡｕメツキされ
るフィルムリード７を接合させて該フィルムリード７の
先端と、基板１の配線１ａとを接合した所謂テープキャ
リアボンディング型である。
尚、前示両実施例では半導体チップ２に１１合金配線２
ａを形成し、これにボール３８が接合されてバンプ電極
３ｂを形成したが、これに限定されず、基板１の配線１
ａをＡｌ合金配線とし、これにボール３ａが接合されて
バンプ電極３ｂを形成しても良い。
以下に、本発明の合金ワイヤー３の種類、ボール形成能
、ボール硬さ、Ａｊ！−８ｉ合金配線への接合性を、ボ
ール硬さＨ，６未満に作製された比較品と共に表１〜表
２７中に示す。
尚、本発明合金ワイヤーにおける急冷凝固時の冷却速度
は１０２〜ｂ 施品及び比較品のワイヤーは何れも線径６０μｍφに作
製したものを試料とした。
上記試料の特性中、ボール形成能とは、各試料をセラミ
ックス性のキャピラリに通し、アルゴンガスに５ｖｏ１
％水素ガスを加えたガス噴出下で、試料の先端近くに設
けた電極と試料との間のアーク放電によりボールを形成
させ、そのボールの形成状況を評価したものであり、評
価Ｏ印は真球度が良く、表面形状が滑らかなボールが形
成できたものである。
（発明の効果） 本発明は上記の構成であるから、以下の利点を有する。
Ｈ，６以上の硬さを有するはんだボールが、通常８．１
２程度のＡｌ合金配線上の表面酸化膜を破壊し、ＡＩ合
金配線新生面とはんだボール新生面の間で拡散が起り、
金属学的接合がなされるをもって、合金ワイヤーの先端
に形成したボールを直接１１合金配線上に接合させるの
で、急冷凝固法により作製された合金ワイヤーを用いて
１合金配線上に直接バンプ電極を接合することができる
。
従って、Ａｌ合金の表面に形成される酸化物を除去しな
ければＡｌ合金配線上に直接バンプ電極を形成できない
従来のものに比べ、工程が減って時間を要せず、コスト
も低減できる。
【図面の簡単な説明】
第１図は本発明の一実施例を示す半導体装置の縦断側面
図、第２図〜第５図は半導体材料の接続方法を工程順に
示す部分拡大縦断側面図、第６図は本発明の他の実施例
を示す半導体装置の縦断側面図である。 Ａ・・・半導体装置本体 ｌ・−・基板　　　　　　１ａ・・・配線２・・・半導
体材料（半導体チップ） ２ａ・・・Ａｌ合金配線　　３・・・合金ワイヤー３８
・・・ボール　　　　　３ｂ・・・バンプ電極時　許　
出　願　人　　　田中電子工業株式会社第１図 ら 第４図　　　　第５図 ス 第６図 Ｉ

Claims (5)

    【特許請求の範囲】
  1. （１）Ｐｂ、Ｓｎ、Ｉｎの何れか一つを主要元素として
    、かつ急冷凝固法により作製された細い合金ワイヤーの
    先端を加熱してブリネル硬度が６以上の硬さを有するボ
    ールを形成し、該ボールを半導体材料のＡｌ合金配線上
    面又は基板のＡｌ合金配線上面に接合させた状態で合金
    ワイヤーを引張ることにより、ボールがその根本部から
    切断されて半導体材料のＡｌ合金配線上面又は基板のＡ
    ｌ合金配線上面にバンプ電極を形成せしめ、そのバンプ
    電極を介して半導体材料を基板に接続する半導体材料の
    接続方法。
  2. （２）Ｐｂ、Ｓｎ、Ｉｎの何れか１つを主要元素とし、
    それに添加元素を配合した合金を急冷凝固法により細い
    ワイヤー状に作製し、該合金ワイヤーの先端を加熱して
    ブリネル硬度が６以上の硬さを有するボールを形成して
    なる半導体材料の接続材料。
  3. （３）上記添加元素がＢｅ、Ｂ、Ｃ、Ｍｇ、Ａｌ、Ｓｉ
    、Ｐ、Ｃａ、Ｔｉ、Ｖ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ
    、Ｃｕ、Ｚｎ、Ｇａ、Ｇｅ、Ｓｅ、Ｚｒ、Ｎｂ、Ｍｏ、
    Ｐｄ、Ａｇ、Ｃｄ、Ｉｎ、Ｓｎ、Ｐｂ、Ｓｂ、Ｔｅ、Ｉ
    ｒ、Ｐｔ、Ａｕ、Ｔｌ、Ｂｉ中の１種又は２種以上であ
    る請求項２記載の半導体材料の接続材料。
  4. （４）半導体装置本体の半導体材料を、Ｐｂ、Ｓｎ、Ｉ
    ｎの何れか一つを主要元素として、かつ急冷凝固法によ
    り作製された細い合金ワイヤーの先端に加熱形成したボ
    ールからなるバンプ電極を介して基板に電気的に接続し
    て形成された半導体装置において、前記半導体材料の配
    線又は基板の配線をＡｌ合金により形成すると共に、ボ
    ールの硬度を６以上の硬さにしたことを特徴とする半導
    体装置。
  5. （５）上記合金ワイヤーが主要元素に添加元素を配合し
    た合金材料であり、この添加元素がＢｅ、Ｂ、Ｃ、Ｍｇ
    、Ａｌ、Ｓｉ、Ｐ、Ｃａ、Ｔｉ、Ｖ、Ｃｒ、Ｍｎ、Ｆｅ
    、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ、Ｇａ、Ｇｅ、Ｓｅ、Ｚｒ、
    Ｎｂ、Ｍｏ、Ｐｄ、Ａｇ、Ｃｄ、Ｉｎ、Ｓｎ、Ｐｂ、Ｓ
    ｂ、Ｔｅ、Ｉｒ、Ｐｔ、Ａｕ、Ｔｌ、Ｂｉ中の１種又は
    ２種以上である請求項４記載の半導体装置。
JP2304509A 1989-12-27 1990-11-09 半導体材料の接続方法，それに用いる接続材料及び半導体装置 Expired - Lifetime JP2891432B2 (ja)

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US5366692A (en) 1994-11-22
EP0435009A3 (en) 1991-09-25
SG46506A1 (en) 1998-02-20
AU6812490A (en) 1991-07-04
EP0435009B1 (en) 1999-01-07
EP0435009A2 (en) 1991-07-03
DE69032879D1 (de) 1999-02-18
CA2031111A1 (en) 1991-06-28
JP2891432B2 (ja) 1999-05-17
DE69032879T2 (de) 1999-09-16
US5550407A (en) 1996-08-27
AU643721B2 (en) 1993-11-25

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