KR910009968A - 단결정 제조장치 - Google Patents

단결정 제조장치 Download PDF

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Publication number
KR910009968A
KR910009968A KR1019890017185A KR890017185A KR910009968A KR 910009968 A KR910009968 A KR 910009968A KR 1019890017185 A KR1019890017185 A KR 1019890017185A KR 890017185 A KR890017185 A KR 890017185A KR 910009968 A KR910009968 A KR 910009968A
Authority
KR
South Korea
Prior art keywords
single crystal
crystal manufacturing
manufacturing equipment
reflecting plate
quartz
Prior art date
Application number
KR1019890017185A
Other languages
English (en)
Other versions
KR940004641B1 (ko
Inventor
강진기
박주성
김한생
Original Assignee
한형수
삼성코닝 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한형수, 삼성코닝 주식회사 filed Critical 한형수
Priority to KR1019890017185A priority Critical patent/KR940004641B1/ko
Publication of KR910009968A publication Critical patent/KR910009968A/ko
Application granted granted Critical
Publication of KR940004641B1 publication Critical patent/KR940004641B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음.

Description

단결정 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 반사판을 설치한 단결정 성장 장치의 개략도.
제5도는 본 발명의 보온통을 설치한 단결정 성장 장치의 개략도.

Claims (1)

  1. 액체 봉지인상법에 의한 GaAs 단결정 제조장치에 있어서, 반사판(13)이나 보온통(14)을 석영으로 하고 그 표면에 금이 코팅된 것을 특징으로 하는 단결정 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890017185A 1989-11-25 1989-11-25 단결정 제조장치 KR940004641B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890017185A KR940004641B1 (ko) 1989-11-25 1989-11-25 단결정 제조장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890017185A KR940004641B1 (ko) 1989-11-25 1989-11-25 단결정 제조장치

Publications (2)

Publication Number Publication Date
KR910009968A true KR910009968A (ko) 1991-06-28
KR940004641B1 KR940004641B1 (ko) 1994-05-27

Family

ID=19292067

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890017185A KR940004641B1 (ko) 1989-11-25 1989-11-25 단결정 제조장치

Country Status (1)

Country Link
KR (1) KR940004641B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8337616B2 (en) * 2007-12-25 2012-12-25 Shin-Etsu Handotai Co., Ltd. Apparatus and method for producing single crystal
US11680311B2 (en) 2018-06-15 2023-06-20 Lg Chem, Ltd. Method for producing amorphous thin film

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101644063B1 (ko) * 2015-03-11 2016-07-29 주식회사 사파이어테크놀로지 반사판을 갖는 단결정 성장장치 및 성장방법
KR101644062B1 (ko) * 2015-03-11 2016-07-29 주식회사 사파이어테크놀로지 히터 승하강 기능을 갖는 단결정 성장장치 및 성장방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8337616B2 (en) * 2007-12-25 2012-12-25 Shin-Etsu Handotai Co., Ltd. Apparatus and method for producing single crystal
US11680311B2 (en) 2018-06-15 2023-06-20 Lg Chem, Ltd. Method for producing amorphous thin film

Also Published As

Publication number Publication date
KR940004641B1 (ko) 1994-05-27

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