KR890007407A - 반도체 프로세싱용 스핀-온 글라스 - Google Patents

반도체 프로세싱용 스핀-온 글라스 Download PDF

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Publication number
KR890007407A
KR890007407A KR1019880013737A KR880013737A KR890007407A KR 890007407 A KR890007407 A KR 890007407A KR 1019880013737 A KR1019880013737 A KR 1019880013737A KR 880013737 A KR880013737 A KR 880013737A KR 890007407 A KR890007407 A KR 890007407A
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South Korea
Prior art keywords
spin
compound
glass
semiconductor processing
ethanol
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KR1019880013737A
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English (en)
Inventor
에드윈 우드 토머스
귄터 휴즈 헨리
Original Assignee
빈센트 죠셉로너
모토로라 인코포레이티드
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Application filed by 빈센트 죠셉로너, 모토로라 인코포레이티드 filed Critical 빈센트 죠셉로너
Publication of KR890007407A publication Critical patent/KR890007407A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
  • Glass Compositions (AREA)

Abstract

내용 없음

Description

반도체 프로세싱용 스핀－온 글라스
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 반도체 장치 프로세싱에 사용을 위한 스핀－온 글라스가 2/1/1의 비인 에탄놀 ; 염화수소 산 ; 및 물과 화합물 테트라에톡시실란, 메틸 트리에톡시실란 및 디메틸디에톡시실란의 제1합성물을 포함하는 것을 특징으로하는 반도체 프로세싱용 스핀－온 글라스.
  2. 반도체 장치 프로세싱에 사용을 위한 스핀－온 글라스가 2/1/1의 비인 에탄놀 ; 염화수소 산 ; 및 물과 혼합된 테트라에톡시실란, 메틸트리에톡시실란 및 디메틸디에톡시실란의 제1합성물을 포함하는 것을 특징으로 하는 반도체 프로세싱용 스핀－온 글라스.
  3. 프로세싱 반도체 장치에 사용을 위한 스핀－온 글라스가 2/1/2의 비인 에탄놀 ; 염화수소 산 ; 및 물과 화합물 테트라에톡시실란의 제1합성물을 포함하는 것을 특징으로 하는 반도체 프로세싱용 스핀－온 글라스.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880013737A 1987-10-22 1988-10-21 반도체 프로세싱용 스핀-온 글라스 KR890007407A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US111,316 1987-10-22
US07/111,316 US4798629A (en) 1987-10-22 1987-10-22 Spin-on glass for use in semiconductor processing

Publications (1)

Publication Number Publication Date
KR890007407A true KR890007407A (ko) 1989-06-19

Family

ID=22337803

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880013737A KR890007407A (ko) 1987-10-22 1988-10-21 반도체 프로세싱용 스핀-온 글라스

Country Status (4)

Country Link
US (1) US4798629A (ko)
JP (1) JPH01130536A (ko)
KR (1) KR890007407A (ko)
MY (1) MY100529A (ko)

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JPH04233732A (ja) 1990-08-16 1992-08-21 Motorola Inc 半導体の製造工程で使用するスピン・オン誘電体
US5302198A (en) * 1990-09-14 1994-04-12 Ncr Corporation Coating solution for forming glassy layers
US5527872A (en) * 1990-09-14 1996-06-18 At&T Global Information Solutions Company Electronic device with a spin-on glass dielectric layer
US5152834A (en) * 1990-09-14 1992-10-06 Ncr Corporation Spin-on glass composition
US5472488A (en) * 1990-09-14 1995-12-05 Hyundai Electronics America Coating solution for forming glassy layers
US5186745A (en) * 1991-02-04 1993-02-16 Motorola, Inc. Teos based spin-on-glass and processes for making and using the same
WO1995024639A1 (en) * 1994-03-11 1995-09-14 Kawasaki Steel Corporation Method of evaluating siloxane used for forming insulation coating, coating fluid used for forming insulation coating, process for producing the fluid, process for forming insulation coating for semiconductor device, and process for producing semiconductor device by applying the above process
US5510147A (en) * 1995-03-03 1996-04-23 International Paper Company Sol gel barrier films
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US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
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US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6268089B1 (en) * 1998-02-23 2001-07-31 Agere Systems Guardian Corp. Photorecording medium and process for forming medium
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Also Published As

Publication number Publication date
JPH01130536A (ja) 1989-05-23
US4798629A (en) 1989-01-17
MY100529A (en) 1990-10-30

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