KR910013437A - 확산형 반도체소자의 제조방법 - Google Patents
확산형 반도체소자의 제조방법 Download PDFInfo
- Publication number
- KR910013437A KR910013437A KR1019900020568A KR900020568A KR910013437A KR 910013437 A KR910013437 A KR 910013437A KR 1019900020568 A KR1019900020568 A KR 1019900020568A KR 900020568 A KR900020568 A KR 900020568A KR 910013437 A KR910013437 A KR 910013437A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- type semiconductor
- diffusion type
- semiconductor substrate
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims 5
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000007791 liquid phase Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000011261 inert gas Substances 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2233—Diffusion into or out of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 액상개관확산법을 실시하는 액상개관확산로의 요부를 나타낸 단면도.
Claims (1)
- 확산튜브(10)내에서 연직방향으로 빽빽이 세워 배치한 반도체기판(14)의 표면부근에서 3.0cm/초 이상의 유속으로 불활성 가스를 흘림과 아울러, 불활성 가스 도입구측에 상기 반도체기판보다 큰 구경의 더미반도체기판(16)을 배치하여 액상확산소스를 흘리는 것을 특징으로 하는 확산형 반도체소자의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01-324491 | 1989-12-14 | ||
JP1324491A JPH03185717A (ja) | 1989-12-14 | 1989-12-14 | 拡散型半導体素子の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR910013437A true KR910013437A (ko) | 1991-08-08 |
Family
ID=18166401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900020568A KR910013437A (ko) | 1989-12-14 | 1990-12-14 | 확산형 반도체소자의 제조방법 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0432781A3 (ko) |
JP (1) | JPH03185717A (ko) |
KR (1) | KR910013437A (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2747402B1 (fr) * | 1996-04-15 | 1998-05-22 | Sgs Thomson Microelectronics | Four a diffusion |
CN102094247B (zh) * | 2010-09-29 | 2013-03-27 | 常州天合光能有限公司 | 磷扩散炉管两端进气装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1521481B1 (de) * | 1965-10-22 | 1969-12-04 | Siemens Ag | Anordnung zur Waermebehandlung von scheibenfoermigen Halbleiterkoerpern |
JPS4934265B1 (ko) * | 1970-06-16 | 1974-09-12 | ||
US3737282A (en) * | 1971-10-01 | 1973-06-05 | Ibm | Method for reducing crystallographic defects in semiconductor structures |
JPS529348B2 (ko) * | 1972-02-10 | 1977-03-15 | ||
JPS59105316A (ja) * | 1982-12-09 | 1984-06-18 | Fuji Electric Co Ltd | 気相拡散方法 |
JPS59151434A (ja) * | 1983-02-18 | 1984-08-29 | Nec Kyushu Ltd | 気相成長装置 |
FR2604297B1 (fr) * | 1986-09-19 | 1989-03-10 | Pauleau Yves | Reacteur de depot de silicium dope |
-
1989
- 1989-12-14 JP JP1324491A patent/JPH03185717A/ja active Pending
-
1990
- 1990-12-13 EP EP19900124131 patent/EP0432781A3/en not_active Withdrawn
- 1990-12-14 KR KR1019900020568A patent/KR910013437A/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH03185717A (ja) | 1991-08-13 |
EP0432781A2 (en) | 1991-06-19 |
EP0432781A3 (en) | 1992-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
SUBM | Submission of document of abandonment before or after decision of registration |