JPS5790952A - Bonding wire - Google Patents

Bonding wire

Info

Publication number
JPS5790952A
JPS5790952A JP16590580A JP16590580A JPS5790952A JP S5790952 A JPS5790952 A JP S5790952A JP 16590580 A JP16590580 A JP 16590580A JP 16590580 A JP16590580 A JP 16590580A JP S5790952 A JPS5790952 A JP S5790952A
Authority
JP
Japan
Prior art keywords
wire
bonding
electrolytic
tensile strength
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16590580A
Other languages
Japanese (ja)
Inventor
Mamoru Hojo
Toru Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP16590580A priority Critical patent/JPS5790952A/en
Publication of JPS5790952A publication Critical patent/JPS5790952A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012Semiconductor purity grades
    • H01L2924/012055N purity grades, i.e. 99.999%

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To increase the tensile strength of the wire, and to improve the reliability of wire bonding for a semiconductor element by using a wire prepared by containing Mg in the quantity of a predetermined range in Au having high purity as the wire bonding. CONSTITUTION:An electrode 2 formed to the semiconductor element 1 and an external lead 4 are bonded through a thermal pressure welding method by using an Au wire 3, and connected electrically. The Au wire 3 used for the bonding is manufactured in such a manner that 0.0001-0.01wt% electrolytic Mg is added to the electrolytic Au having high purity (approximately 99.999%), dissolved and casted, and rolled and stretched to a desired wire diameter. Accordingly, the tensile strength can be increased more than a pure gold wire without remarkably increasing the resistance value of the gold wire, and bonding property is not damaged, thus improving reliability.
JP16590580A 1980-11-27 1980-11-27 Bonding wire Pending JPS5790952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16590580A JPS5790952A (en) 1980-11-27 1980-11-27 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16590580A JPS5790952A (en) 1980-11-27 1980-11-27 Bonding wire

Publications (1)

Publication Number Publication Date
JPS5790952A true JPS5790952A (en) 1982-06-05

Family

ID=15821218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16590580A Pending JPS5790952A (en) 1980-11-27 1980-11-27 Bonding wire

Country Status (1)

Country Link
JP (1) JPS5790952A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4938923A (en) * 1989-04-28 1990-07-03 Takeshi Kujiraoka Gold wire for the bonding of a semiconductor device
US4993622A (en) * 1987-04-28 1991-02-19 Texas Instruments Incorporated Semiconductor integrated circuit chip interconnections and methods
KR100945507B1 (en) * 2007-10-30 2010-03-09 주식회사 하이닉스반도체 Bonding wier and semiconductor package having the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4993622A (en) * 1987-04-28 1991-02-19 Texas Instruments Incorporated Semiconductor integrated circuit chip interconnections and methods
US4938923A (en) * 1989-04-28 1990-07-03 Takeshi Kujiraoka Gold wire for the bonding of a semiconductor device
KR100945507B1 (en) * 2007-10-30 2010-03-09 주식회사 하이닉스반도체 Bonding wier and semiconductor package having the same

Similar Documents

Publication Publication Date Title
JPS5790952A (en) Bonding wire
GB2131730B (en) Wire bonding
JPS5616647A (en) Aluminum alloy super fine conductive wire
GB2229859B (en) Bonding wire for semiconductor elememt
JPS5790948A (en) Bonding wire for semiconductor element
JPS5790954A (en) Gold wire for bonding
GB2181157B (en) Gold line for bonding semiconductor element
JPS5790950A (en) Bonding wire for assembling semiconductor device
JPS6222451B2 (en)
JPS5790949A (en) Bonding wire for semiconductor element
JPS5790953A (en) Bonding wire
JPS6222448B2 (en)
JPS5790951A (en) Bonding wire for assembling semiconductor device
JPS6467708A (en) Thin film magnetic head
JPS5690579A (en) Gas laser tube
JPS57114277A (en) Semiconductor device
JPS61208231A (en) Semiconductor device
JPS55158642A (en) Bonding alloy wire for assembling semiconductor device
JPS5439343A (en) Bonding method
JPS5771139A (en) Semiconductor device
JPS5297671A (en) Semiconductor device
JPS6412560A (en) Semiconductor device
JPS5364468A (en) Silver wire connecting method
JPS6127666A (en) Small-gage line for bonding of semiconductor element
JPS55153341A (en) Semiconductor device