KR970067816A - 집적회로용 리드프레임 및 그 제조방법 - Google Patents

집적회로용 리드프레임 및 그 제조방법 Download PDF

Info

Publication number
KR970067816A
KR970067816A KR1019960008362A KR19960008362A KR970067816A KR 970067816 A KR970067816 A KR 970067816A KR 1019960008362 A KR1019960008362 A KR 1019960008362A KR 19960008362 A KR19960008362 A KR 19960008362A KR 970067816 A KR970067816 A KR 970067816A
Authority
KR
South Korea
Prior art keywords
palladium
alloy
lead frame
integrated circuit
plate
Prior art date
Application number
KR1019960008362A
Other languages
English (en)
Inventor
김중도
백영호
Original Assignee
이대원
삼성항공산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이대원, 삼성항공산업 주식회사 filed Critical 이대원
Priority to KR1019960008362A priority Critical patent/KR970067816A/ko
Priority to TW086103219A priority patent/TW338186B/zh
Priority to JP9066227A priority patent/JPH1022434A/ja
Priority to US08/823,691 priority patent/US5958607A/en
Publication of KR970067816A publication Critical patent/KR970067816A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49534—Multi-layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/85464—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/929—Electrical contact feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12875—Platinum group metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

집적회로용 리드프레임 및 그 제조방법을 개시한다. 이 집적회로용 리드프레임은 금속기면으로부터 금속원자의 확산을 막기위해 기저금속과, 이 기저금속 위에 일정두께로 직접 도포된 팔라듐합금층을 구비한다. 이 집적회로용 리드프레임 장치를 채용하는 것에 의해 니켈 원자의 확산 문제를 해결할 수 있다. 그리고, 이 집적회로용 리드프레임 제조방법은 납땜성에 가장 큰 악영항을 미치는 니켈 중간층을 생략하기 위해 선택된 소재의 표면의 통상적인 탈지 및 활성화 처리단계와, 상기 탈지 및 활성화 처리한 표면위에 일정두께로 팔라듐합금층을 도포하는 단계로 이루어진 것을 특징으로 하고 있다. 이 집적회로용 리드프레임 제조방법을 적용함으로써 리드프레임의 제반특성을 향상시키고 제조공정과 반도체조립공정에서 수율을 높여서 생산성 향상을 가져올 수 있다.

Description

집적회로용 리드프레임 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명에 따른 집적회로용 리드프레임의 구조를 나타내는 단면도이다.

Claims (12)

  1. 집적회로용 리드프레임에 있어서, 기저금속과, 상기 기저금속 위에 일정두께로 직접 도포된 팔라듐합금층을 구비하여 된것을 특징으로 하는 집적회로용 리드프레임.
  2. 제1항에 있어서, 상기 팔라듐합금층은 두께가 0.1㎛ 에서 2㎛의 범위를 갖는 것을 특징으로 하는 집적회로용 리드프레임.
  3. 제1항에 있어서, 상기 팔라듐합금층은 팔라듐-금 합금, 팔라듐-코발트 합금, 팔라듐-텅스텐 합금, 팔라듐-은 합금, 팔라듐-티타늄 합금, 팔라듐-몰리브덴 합금, 팔라듐-주석 합금 중에서 어느 하나의 것으로 이루어진 것을 특징으로 하는 집적회로용 리드프레임.
  4. 제3항에 있어서, 상기 팔라듐-금 합금, 팔라듐-코발트 합금, 팔라듐-텅스텐 합금, 팔라듐-은 합금, 팔라듐-티타늄 합금, 팔라듐-몰리브덴 합금, 팔라듐-주석 합금 중 어느 하나로 이루어진 팔라듐 합금층은 그 합금의 조성이 각각 전체무게의 50%이상의 팔라듐성분을 갖는 것을 특징으로 하는 집적회로용 리드프레임.
  5. 제1항에 있어서, 상기 거저금속은 동판, 동합금판, 니켈합금판 중 어느하나의 것으로 이루어진 것을 특징으로 하는 집적회로용 리드프레임.
  6. 제5항에 있어서, 상기 동판, 동합금판, 니켈합금판 중 어느 하나로 이루어진 기저금 속의 두께는 0.1mm에서 3mm 사이의 것을 특징으로 하는 집적회로용 리드프레임.
  7. 집적회로용 리드프레임 제조방법에 있어서, 선택된 소재의 표면에 통상적인 탈지 및 활성화 처리단계와, 상기 탈지 및 활성화 처리한 표면위에 일정두께로 팔라듐합금층을 도포하는 단계로 이루어진 것을 특징으로 하는 집적회로용 리드프레임.
  8. 제7항에 있어서, 상기 팔라듐합금층은 두께가 0.1㎛ 에서 2㎛의 범위를 갖는 것을 특징으로 하는 집적회로용 리드프레임 제조방법.
  9. 제7항에 있어서, 상기 팔라듐합금은 팔라듐-금 합금, 팔라듐-코발트 합금, 팔라듐-텅스텐 합금, 팔라듐-은 합금, 팔라듐-티타늄 합금, 팔라듐-몰리브덴 합금, 팔라듐-주석 합금 중에서 어느 하나의 것으로 이루어진 것을 특징으로 하는 집적회로용 리드프레임 제조방법.
  10. 제9항에 있어서, 상기 팔라듐-금 합금, 팔라듐-코발트 합금, 팔라듐-텅스텐 합금, 팔라듐-은 합금, 팔라듐-티타늄 합금, 팔라듐-몰리브덴 합금, 팔라듐-주석 합금 중 어느 하나로 이루어진 팔라듐 합금층은 그 합금의 조성이 각각 전체무게의 50%이상의 팔라듐성분을 갖는 것을 특징으로 하는 집적회로용 리드프레임 제조방법.
  11. 제7항에 있어서, 상기 선택된 소재는 동판, 동합금판, 니켈합금판 중 어느하나로 이루어진 것을 특징으로 하는 집적회로용 리드프레임 제조방법.
  12. 제11항에 있어서, 상기 동판, 동합금판, 니켈합금판 중 어느 하나로 이루어진 기저금 속의 두께는 0.1mm에서 3mm 사이의 것을 특징으로 하는 집적회로용 리드프레임 제조방법.
KR1019960008362A 1996-03-26 1996-03-26 집적회로용 리드프레임 및 그 제조방법 KR970067816A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019960008362A KR970067816A (ko) 1996-03-26 1996-03-26 집적회로용 리드프레임 및 그 제조방법
TW086103219A TW338186B (en) 1996-03-26 1997-03-14 Lead frame and manufacturing method therefor
JP9066227A JPH1022434A (ja) 1996-03-26 1997-03-19 集積回路用リードフレーム及びその製造方法
US08/823,691 US5958607A (en) 1996-03-26 1997-03-25 Lead frame for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960008362A KR970067816A (ko) 1996-03-26 1996-03-26 집적회로용 리드프레임 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR970067816A true KR970067816A (ko) 1997-10-13

Family

ID=19453976

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960008362A KR970067816A (ko) 1996-03-26 1996-03-26 집적회로용 리드프레임 및 그 제조방법

Country Status (4)

Country Link
US (1) US5958607A (ko)
JP (1) JPH1022434A (ko)
KR (1) KR970067816A (ko)
TW (1) TW338186B (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140703A (en) * 1996-08-05 2000-10-31 Motorola, Inc. Semiconductor metallization structure
US6255723B1 (en) * 1997-10-27 2001-07-03 Tessera, Inc. Layered lead structures
US20030011048A1 (en) * 1999-03-19 2003-01-16 Abbott Donald C. Semiconductor circuit assembly having a plated leadframe including gold selectively covering areas to be soldered
US6469386B1 (en) * 1999-10-01 2002-10-22 Samsung Aerospace Industries, Ltd. Lead frame and method for plating the same
KR101038491B1 (ko) * 2004-04-16 2011-06-01 삼성테크윈 주식회사 리드프레임 및 그 제조 방법
WO2005116300A1 (ja) * 2004-05-25 2005-12-08 Shinko Electric Industries Co., Ltd. 半導体部品の外装パラジウムめっき構造及び半導体装置の製造方法
JP4406329B2 (ja) * 2004-07-14 2010-01-27 株式会社東芝 半導体装置及びその製造方法
US7507605B2 (en) * 2004-12-30 2009-03-24 Texas Instruments Incorporated Low cost lead-free preplated leadframe having improved adhesion and solderability
KR100819800B1 (ko) * 2005-04-15 2008-04-07 삼성테크윈 주식회사 반도체 패키지용 리드 프레임
US9029991B2 (en) 2010-11-16 2015-05-12 Conexant Systems, Inc. Semiconductor packages with reduced solder voiding
US10191128B2 (en) 2014-02-12 2019-01-29 Life Services, LLC Device and method for loops-over-loops MRI coils

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60248892A (ja) * 1984-05-24 1985-12-09 Electroplating Eng Of Japan Co 高純度パラジウム・ニッケル合金メッキ液及び方法
US4985310A (en) * 1988-04-08 1991-01-15 International Business Machines Corp. Multilayered metallurgical structure for an electronic component
JPH06112389A (ja) * 1992-09-24 1994-04-22 Hitachi Metals Ltd リードフレームおよびその製造方法
JPH0714962A (ja) * 1993-04-28 1995-01-17 Mitsubishi Shindoh Co Ltd リードフレーム材およびリードフレーム
KR960039315A (ko) * 1995-04-06 1996-11-25 이대원 리드프레임 제조방법
TW340139B (en) * 1995-09-16 1998-09-11 Moon Sung-Soo Process for plating palladium or palladium alloy onto iron-nickel alloy substrate
KR0183645B1 (ko) * 1996-03-26 1999-03-20 이대원 다층 구조의 도금층을 구비한 반도체 리드 프레임
JPH09275182A (ja) * 1996-04-02 1997-10-21 Seiichi Serizawa 半導体装置用リ−ドフレ−ム

Also Published As

Publication number Publication date
JPH1022434A (ja) 1998-01-23
TW338186B (en) 1998-08-11
US5958607A (en) 1999-09-28

Similar Documents

Publication Publication Date Title
US5767574A (en) Semiconductor lead frame
US6245448B1 (en) Lead frame with reduced corrosion
US5486721A (en) Lead frame for integrated circuits
KR970067816A (ko) 집적회로용 리드프레임 및 그 제조방법
JP2000031365A (ja) 選択的なパラジウムめっきを有するリ―ドフレ―ム
KR920001701A (ko) 반도체 장치 및 그 제조방법
KR890013766A (ko) 개량된 리드프레임 및 개량된 리드프레임을 사용하는 전자부품을 제조하는 방법
KR880001053A (ko) 집적 회로용 팔라듐 도금 리이드 프레임 및 그 제조 방법
US5444293A (en) Structure and method for providing a lead frame with enhanced solder wetting leads
US4883774A (en) Silver flashing process on semiconductor leadframes
JP2000269398A (ja) 半導体デバイスのアルミニウム製リードフレームおよび製造方法
US20040262719A1 (en) Lead frame for semiconductor packages
JPS59168659A (ja) 集積回路用リ−ドフレ−ム
EP1625618B1 (en) Semiconductor package having filler metal of gold/silver/copper alloy
JPH04134852A (ja) リードフレーム
KR100225778B1 (ko) 리드 프레임을 이용한 반도체 팩키지
KR100209264B1 (ko) 반도체 리드 프레임
KR100189819B1 (ko) 팔라듐이 도금된 반도체 리드프레임
KR100203333B1 (ko) 다층 도금 리드프레임
KR100203334B1 (ko) 다층도금 리드프레임
JP2005079524A (ja) 半導体装置用リードフレーム
KR100269238B1 (ko) 류테늄도금리드프레임
KR100294911B1 (ko) 반도체리드프레임
KR970073486A (ko) 집적회로용 리드프레임
KR910001955A (ko) 집적회로장치 및 유전체 지지전도패드 제조 방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application