KR920001701A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR920001701A
KR920001701A KR1019910009041A KR910009041A KR920001701A KR 920001701 A KR920001701 A KR 920001701A KR 1019910009041 A KR1019910009041 A KR 1019910009041A KR 910009041 A KR910009041 A KR 910009041A KR 920001701 A KR920001701 A KR 920001701A
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South Korea
Prior art keywords
semiconductor chip
lead frame
layer
electrode
semiconductor device
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KR1019910009041A
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English (en)
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KR970000972B1 (ko
Inventor
다까오 후지쯔
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아오이 죠이찌
가부시끼가이샤 도시바
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Application filed by 아오이 죠이찌, 가부시끼가이샤 도시바 filed Critical 아오이 죠이찌
Publication of KR920001701A publication Critical patent/KR920001701A/ko
Priority to KR1019960058152A priority Critical patent/KR970005717B1/ko
Priority to KR1019960058150A priority patent/KR970005715B1/ko
Priority to KR1019960058149A priority patent/KR970005714B1/ko
Priority to KR96058153A priority patent/KR970005718B1/ko
Priority to KR1019960058151A priority patent/KR970005716B1/ko
Application granted granted Critical
Publication of KR970000972B1 publication Critical patent/KR970000972B1/ko

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Abstract

내용 없음

Description

반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 한 실시예 장치의 일부 구성을 도시한 단면도.
제 2도는 상기 실시예 장치의 거의 전체 구성을 도시한 단면도.
재 3도는 상기 실시예 장치에 있어서 전극 패드의 상세한 구성을 도시한 단면도

Claims (9)

  1. 도전성 재료로 이루어지는 리드 프레임(17), 표면에 전극(14)가 형성된 반도체 칩(11) 및, 상기 리드 프레임의 소정 위치와 상기 반도체 칩의 전극을 전기적으로 접속하는 금속 도금(20)에 의한 접속부를 포함하는 것을 특징으로 하는 반도체 장치.
  2. 제 1항에 있어서, 상기 리드 프레임이 절연 필름(18) 상에 배선패턴(19)가 형성된 TAB방식인 것을 특징으로 하는 반도체 장치.
  3. 제 1항에 있어서, 상기 리드 프레임이 금속 박판을 펀칭 가공하여 얻어지는 것을 특징으로 하는 반도체 장치.
  4. 제 1항에 있어서, 상기 반도체 칩의 표면에 형성된 전극이 알루미늄층(12), 상기 알루미늄층상에 형성된 티탄층(31), 및 상기 티탄층상에 형성된 금 도금층 또는 닉켈 도금층 또는 동 도금층중 어느 하나의 층(32)를 포함하는 것을 특징으로 하는 반도체 장치.
  5. 절연필름(18), 상기 절연 필름상에 형성된 배선 패턴(19), 표면에 전극(14)가 형성된 반도체 칩(11), 및 상기 배선 패턴의 단면과 상기 반도체 칩의 전극을 전기적으로 접속하는 금속 도금(20)에 의한 접속부를 포함하는 것을 특징으로 하는 반도체 장치.
  6. 제 5항에 있어서, 상기 반도체 칩의 표면에 형성된 전극이 알루미늄층(12), 상기 알루미늄층상에 형성된 타탄층(31), 및 상기 티탄층상에 형성된 금 도금층 또는 닉켈 도금층 또는 동 도금층중 하나의 층(32)를 포함하는 것을 특징으로 하는 반도체 장치.
  7. 반도체 칩(11)이 접속된 리드 프레임(17), 표면에 배선 패턴(52)가 형성된 배선 기판(51), 및 상기 리드 프레임과 상기 배선 기판의 배선 패턴을 전기적으로 접속하는 금속 도금(20)에 의한 접속부를 포함하는 것을 특징으로 하는 반도체 장치.
  8. 도전성 재료로 이루어지는 리드 프레임(53), 표면에 전극(14)가 형성된 반도체 칩(11), 상기 리드 프레임의 소정 위치와 상기 반도체 칩의 전극을 전기적으로 접속하는 도전성 접착제(54)로 이루어지는 제1접속부, 및 상기 제1접속부 주위를 덮도록 설치되어 상기 리드 프레임과 상기 반도체 칩의 전극을 전기적으로 접속하는 금속 도금(55)에 의한 제2접속부를 포함하는 것을 특징으로 하는 반도체 장치.
  9. 도전성 재료로 이루어지는 리드 프레임(17)의 소정 위치와 반도체 칩(11)의 표면에 형성된 전극(14)를 근접시킨 상태에서 리드 프레임에 반도체 칩을 점착하는 공정, 및 양자를 전계 도금 용액중에 침적해서 상기 리드 프레임의 소정 위치와 상기 반도체 칩의 전극을 전기적으로 접속하는 금속 도금층(22)을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910009041A 1990-06-01 1991-05-31 반도체 장치 및 그 제조 방법 KR970000972B1 (ko)

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KR1019960058152A KR970005717B1 (ko) 1990-06-01 1996-11-27 반도체 장치 및 그 제조 방법
KR1019960058150A KR970005715B1 (ko) 1990-06-01 1996-11-27 반도체 장치 및 그 제조 방법
KR1019960058149A KR970005714B1 (ko) 1990-06-01 1996-11-27 반도체 장치 및 그 제조 방법
KR96058153A KR970005718B1 (en) 1990-06-01 1996-11-27 A semiconductor device and its menufacture method
KR1019960058151A KR970005716B1 (ko) 1990-06-01 1996-11-27 반도체 장치 및 그 제조 방법

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JP2141684A JP2540652B2 (ja) 1990-06-01 1990-06-01 半導体装置
JP2-141684 1990-06-01

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KR1019960058151A Division KR970005716B1 (ko) 1990-06-01 1996-11-27 반도체 장치 및 그 제조 방법
KR1019960058149A Division KR970005714B1 (ko) 1990-06-01 1996-11-27 반도체 장치 및 그 제조 방법
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102646637B1 (ko) * 2022-12-07 2024-03-12 주식회사바텍 엑스선 소스용 전압변환장치

Families Citing this family (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5249728A (en) * 1993-03-10 1993-10-05 Atmel Corporation Bumpless bonding process having multilayer metallization
JPH0799213A (ja) * 1993-06-09 1995-04-11 At & T Corp 集積回路チップ
JP2833996B2 (ja) * 1994-05-25 1998-12-09 日本電気株式会社 フレキシブルフィルム及びこれを有する半導体装置
JP3226752B2 (ja) * 1995-04-12 2001-11-05 株式会社東芝 半導体装置の製造方法
KR0157905B1 (ko) * 1995-10-19 1998-12-01 문정환 반도체 장치
KR100186333B1 (ko) * 1996-06-20 1999-03-20 문정환 칩 사이즈 반도체 패키지 및 그 제조방법
US6406939B1 (en) 1998-05-02 2002-06-18 Charles W. C. Lin Flip chip assembly with via interconnection
SG75841A1 (en) 1998-05-02 2000-10-24 Eriston Invest Pte Ltd Flip chip assembly with via interconnection
US6143981A (en) 1998-06-24 2000-11-07 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
SG82591A1 (en) 1998-12-17 2001-08-21 Eriston Technologies Pte Ltd Bumpless flip chip assembly with solder via
SG78324A1 (en) 1998-12-17 2001-02-20 Eriston Technologies Pte Ltd Bumpless flip chip assembly with strips-in-via and plating
SG82590A1 (en) 1998-12-17 2001-08-21 Eriston Technologies Pte Ltd Bumpless flip chip assembly with strips and via-fill
KR100379089B1 (ko) * 1999-10-15 2003-04-08 앰코 테크놀로지 코리아 주식회사 리드프레임 및 이를 이용한 반도체패키지
US6639308B1 (en) 1999-12-16 2003-10-28 Amkor Technology, Inc. Near chip size semiconductor package
US7042068B2 (en) 2000-04-27 2006-05-09 Amkor Technology, Inc. Leadframe and semiconductor package made using the leadframe
US6436734B1 (en) 2000-08-22 2002-08-20 Charles W. C. Lin Method of making a support circuit for a semiconductor chip assembly
US6562657B1 (en) 2000-08-22 2003-05-13 Charles W. C. Lin Semiconductor chip assembly with simultaneously electrolessly plated contact terminal and connection joint
US6402970B1 (en) 2000-08-22 2002-06-11 Charles W. C. Lin Method of making a support circuit for a semiconductor chip assembly
US6350633B1 (en) 2000-08-22 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
US6562709B1 (en) 2000-08-22 2003-05-13 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
US6660626B1 (en) 2000-08-22 2003-12-09 Charles W. C. Lin Semiconductor chip assembly with simultaneously electrolessly plated contact terminal and connection joint
US6551861B1 (en) 2000-08-22 2003-04-22 Charles W. C. Lin Method of making a semiconductor chip assembly by joining the chip to a support circuit with an adhesive
US6403460B1 (en) 2000-08-22 2002-06-11 Charles W. C. Lin Method of making a semiconductor chip assembly
US6350386B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Method of making a support circuit with a tapered through-hole for a semiconductor chip assembly
US6350632B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with ball bond connection joint
US6511865B1 (en) 2000-09-20 2003-01-28 Charles W. C. Lin Method for forming a ball bond connection joint on a conductive trace and conductive pad in a semiconductor chip assembly
US6544813B1 (en) 2000-10-02 2003-04-08 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6448108B1 (en) 2000-10-02 2002-09-10 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6908788B1 (en) 2000-10-13 2005-06-21 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using a metal base
US7009297B1 (en) 2000-10-13 2006-03-07 Bridge Semiconductor Corporation Semiconductor chip assembly with embedded metal particle
US6492252B1 (en) 2000-10-13 2002-12-10 Bridge Semiconductor Corporation Method of connecting a bumped conductive trace to a semiconductor chip
US7190080B1 (en) 2000-10-13 2007-03-13 Bridge Semiconductor Corporation Semiconductor chip assembly with embedded metal pillar
US7132741B1 (en) 2000-10-13 2006-11-07 Bridge Semiconductor Corporation Semiconductor chip assembly with carved bumped terminal
US7414319B2 (en) * 2000-10-13 2008-08-19 Bridge Semiconductor Corporation Semiconductor chip assembly with metal containment wall and solder terminal
US7129575B1 (en) 2000-10-13 2006-10-31 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped metal pillar
US7075186B1 (en) 2000-10-13 2006-07-11 Bridge Semiconductor Corporation Semiconductor chip assembly with interlocked contact terminal
US6548393B1 (en) 2000-10-13 2003-04-15 Charles W. C. Lin Semiconductor chip assembly with hardened connection joint
US7129113B1 (en) 2000-10-13 2006-10-31 Bridge Semiconductor Corporation Method of making a three-dimensional stacked semiconductor package with a metal pillar in an encapsulant aperture
US6699780B1 (en) 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
US7319265B1 (en) 2000-10-13 2008-01-15 Bridge Semiconductor Corporation Semiconductor chip assembly with precision-formed metal pillar
US7094676B1 (en) 2000-10-13 2006-08-22 Bridge Semiconductor Corporation Semiconductor chip assembly with embedded metal pillar
US6673710B1 (en) 2000-10-13 2004-01-06 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip
US6876072B1 (en) 2000-10-13 2005-04-05 Bridge Semiconductor Corporation Semiconductor chip assembly with chip in substrate cavity
US6872591B1 (en) 2000-10-13 2005-03-29 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a conductive trace and a substrate
US6740576B1 (en) 2000-10-13 2004-05-25 Bridge Semiconductor Corporation Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly
US6440835B1 (en) 2000-10-13 2002-08-27 Charles W. C. Lin Method of connecting a conductive trace to a semiconductor chip
US6576539B1 (en) 2000-10-13 2003-06-10 Charles W.C. Lin Semiconductor chip assembly with interlocked conductive trace
US6576493B1 (en) 2000-10-13 2003-06-10 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US6984576B1 (en) 2000-10-13 2006-01-10 Bridge Semiconductor Corporation Method of connecting an additively and subtractively formed conductive trace and an insulative base to a semiconductor chip
US7262082B1 (en) 2000-10-13 2007-08-28 Bridge Semiconductor Corporation Method of making a three-dimensional stacked semiconductor package with a metal pillar and a conductive interconnect in an encapsulant aperture
US6667229B1 (en) 2000-10-13 2003-12-23 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace and an insulative base to a semiconductor chip
US6537851B1 (en) 2000-10-13 2003-03-25 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace to a semiconductor chip
US7071089B1 (en) 2000-10-13 2006-07-04 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a carved bumped terminal
US7264991B1 (en) 2000-10-13 2007-09-04 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using conductive adhesive
US6949408B1 (en) 2000-10-13 2005-09-27 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US6444489B1 (en) 2000-12-15 2002-09-03 Charles W. C. Lin Semiconductor chip assembly with bumped molded substrate
US6653170B1 (en) 2001-02-06 2003-11-25 Charles W. C. Lin Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit
KR100369393B1 (ko) 2001-03-27 2003-02-05 앰코 테크놀로지 코리아 주식회사 리드프레임 및 이를 이용한 반도체패키지와 그 제조 방법
US6905914B1 (en) 2002-11-08 2005-06-14 Amkor Technology, Inc. Wafer level package and fabrication method
US7723210B2 (en) 2002-11-08 2010-05-25 Amkor Technology, Inc. Direct-write wafer level chip scale package
US7993983B1 (en) 2003-11-17 2011-08-09 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with chip and encapsulant grinding
US7538415B1 (en) 2003-11-20 2009-05-26 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal, filler and insulative base
US7425759B1 (en) 2003-11-20 2008-09-16 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal and filler
US7761814B2 (en) 2004-09-13 2010-07-20 Microsoft Corporation Flick gesture
US7750483B1 (en) 2004-11-10 2010-07-06 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar and enlarged plated contact terminal
US7268421B1 (en) 2004-11-10 2007-09-11 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar that includes enlarged ball bond
US7446419B1 (en) 2004-11-10 2008-11-04 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar of stacked metal balls
US7507603B1 (en) 2005-12-02 2009-03-24 Amkor Technology, Inc. Etch singulated semiconductor package
US7572681B1 (en) 2005-12-08 2009-08-11 Amkor Technology, Inc. Embedded electronic component package
US7902660B1 (en) 2006-05-24 2011-03-08 Amkor Technology, Inc. Substrate for semiconductor device and manufacturing method thereof
US7968998B1 (en) 2006-06-21 2011-06-28 Amkor Technology, Inc. Side leaded, bottom exposed pad and bottom exposed lead fusion quad flat semiconductor package
JP2008078561A (ja) * 2006-09-25 2008-04-03 Toshiba Corp 半導体装置及びその製造方法
US7494843B1 (en) 2006-12-26 2009-02-24 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with thermal conductor and encapsulant grinding
US7811863B1 (en) 2006-10-26 2010-10-12 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with metal pillar and encapsulant grinding and heat sink attachment
US7687893B2 (en) 2006-12-27 2010-03-30 Amkor Technology, Inc. Semiconductor package having leadframe with exposed anchor pads
US7829990B1 (en) 2007-01-18 2010-11-09 Amkor Technology, Inc. Stackable semiconductor package including laminate interposer
US7982297B1 (en) 2007-03-06 2011-07-19 Amkor Technology, Inc. Stackable semiconductor package having partially exposed semiconductor die and method of fabricating the same
US7977774B2 (en) 2007-07-10 2011-07-12 Amkor Technology, Inc. Fusion quad flat semiconductor package
US7687899B1 (en) 2007-08-07 2010-03-30 Amkor Technology, Inc. Dual laminate package structure with embedded elements
US7777351B1 (en) 2007-10-01 2010-08-17 Amkor Technology, Inc. Thin stacked interposer package
US8089159B1 (en) 2007-10-03 2012-01-03 Amkor Technology, Inc. Semiconductor package with increased I/O density and method of making the same
US7847386B1 (en) 2007-11-05 2010-12-07 Amkor Technology, Inc. Reduced size stacked semiconductor package and method of making the same
US7956453B1 (en) 2008-01-16 2011-06-07 Amkor Technology, Inc. Semiconductor package with patterning layer and method of making same
US7723852B1 (en) 2008-01-21 2010-05-25 Amkor Technology, Inc. Stacked semiconductor package and method of making same
US8067821B1 (en) 2008-04-10 2011-11-29 Amkor Technology, Inc. Flat semiconductor package with half package molding
US7768135B1 (en) 2008-04-17 2010-08-03 Amkor Technology, Inc. Semiconductor package with fast power-up cycle and method of making same
US7808084B1 (en) 2008-05-06 2010-10-05 Amkor Technology, Inc. Semiconductor package with half-etched locking features
US8125064B1 (en) 2008-07-28 2012-02-28 Amkor Technology, Inc. Increased I/O semiconductor package and method of making same
US8184453B1 (en) 2008-07-31 2012-05-22 Amkor Technology, Inc. Increased capacity semiconductor package
US7847392B1 (en) 2008-09-30 2010-12-07 Amkor Technology, Inc. Semiconductor device including leadframe with increased I/O
US7989933B1 (en) 2008-10-06 2011-08-02 Amkor Technology, Inc. Increased I/O leadframe and semiconductor device including same
US8008758B1 (en) 2008-10-27 2011-08-30 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe
US8089145B1 (en) 2008-11-17 2012-01-03 Amkor Technology, Inc. Semiconductor device including increased capacity leadframe
US8072050B1 (en) 2008-11-18 2011-12-06 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including passive device
US7875963B1 (en) 2008-11-21 2011-01-25 Amkor Technology, Inc. Semiconductor device including leadframe having power bars and increased I/O
US7982298B1 (en) 2008-12-03 2011-07-19 Amkor Technology, Inc. Package in package semiconductor device
US20170117214A1 (en) 2009-01-05 2017-04-27 Amkor Technology, Inc. Semiconductor device with through-mold via
US8680656B1 (en) 2009-01-05 2014-03-25 Amkor Technology, Inc. Leadframe structure for concentrated photovoltaic receiver package
US8058715B1 (en) 2009-01-09 2011-11-15 Amkor Technology, Inc. Package in package device for RF transceiver module
US8026589B1 (en) 2009-02-23 2011-09-27 Amkor Technology, Inc. Reduced profile stackable semiconductor package
US7960818B1 (en) 2009-03-04 2011-06-14 Amkor Technology, Inc. Conformal shield on punch QFN semiconductor package
US8575742B1 (en) 2009-04-06 2013-11-05 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including power bars
US8796561B1 (en) 2009-10-05 2014-08-05 Amkor Technology, Inc. Fan out build up substrate stackable package and method
US8937381B1 (en) 2009-12-03 2015-01-20 Amkor Technology, Inc. Thin stackable package and method
US9691734B1 (en) 2009-12-07 2017-06-27 Amkor Technology, Inc. Method of forming a plurality of electronic component packages
US8324511B1 (en) 2010-04-06 2012-12-04 Amkor Technology, Inc. Through via nub reveal method and structure
US8294276B1 (en) 2010-05-27 2012-10-23 Amkor Technology, Inc. Semiconductor device and fabricating method thereof
US8440554B1 (en) 2010-08-02 2013-05-14 Amkor Technology, Inc. Through via connected backside embedded circuit features structure and method
US8487445B1 (en) 2010-10-05 2013-07-16 Amkor Technology, Inc. Semiconductor device having through electrodes protruding from dielectric layer
US8791501B1 (en) 2010-12-03 2014-07-29 Amkor Technology, Inc. Integrated passive device structure and method
US8674485B1 (en) 2010-12-08 2014-03-18 Amkor Technology, Inc. Semiconductor device including leadframe with downsets
US8390130B1 (en) 2011-01-06 2013-03-05 Amkor Technology, Inc. Through via recessed reveal structure and method
US8648450B1 (en) 2011-01-27 2014-02-11 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands
TWI557183B (zh) 2015-12-16 2016-11-11 財團法人工業技術研究院 矽氧烷組成物、以及包含其之光電裝置
US8866278B1 (en) 2011-10-10 2014-10-21 Amkor Technology, Inc. Semiconductor device with increased I/O configuration
US8552548B1 (en) 2011-11-29 2013-10-08 Amkor Technology, Inc. Conductive pad on protruding through electrode semiconductor device
US9704725B1 (en) 2012-03-06 2017-07-11 Amkor Technology, Inc. Semiconductor device with leadframe configured to facilitate reduced burr formation
US9129943B1 (en) 2012-03-29 2015-09-08 Amkor Technology, Inc. Embedded component package and fabrication method
US9048298B1 (en) 2012-03-29 2015-06-02 Amkor Technology, Inc. Backside warpage control structure and fabrication method
JP2013138511A (ja) * 2013-03-27 2013-07-11 Taiyo Yuden Co Ltd 弾性波装置
KR101486790B1 (ko) 2013-05-02 2015-01-28 앰코 테크놀로지 코리아 주식회사 강성보강부를 갖는 마이크로 리드프레임
US20150075849A1 (en) * 2013-09-17 2015-03-19 Jia Lin Yap Semiconductor device and lead frame with interposer
KR101563911B1 (ko) 2013-10-24 2015-10-28 앰코 테크놀로지 코리아 주식회사 반도체 패키지
US9673122B2 (en) 2014-05-02 2017-06-06 Amkor Technology, Inc. Micro lead frame structure having reinforcing portions and method
CN108054108B (zh) * 2017-12-19 2019-10-25 哈尔滨工业大学 一种基于快速局域电沉积的引线键合方法
CN107946201B (zh) * 2017-12-19 2020-03-31 哈尔滨工业大学 一种基于局域电沉积的引线键合焊点结构的制备方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53103659U (ko) * 1977-01-25 1978-08-21
US4176443A (en) * 1977-03-08 1979-12-04 Sgs-Ates Componenti Elettronici S.P.A. Method of connecting semiconductor structure to external circuits
JPS5524479A (en) * 1978-08-09 1980-02-21 Nec Corp Semiconductor
JPS5750056A (en) * 1980-09-09 1982-03-24 Toshiba Corp Information processor having branch trace function
JPS57143848A (en) * 1981-02-27 1982-09-06 Nec Corp Semiconductor device
US4496965A (en) * 1981-05-18 1985-01-29 Texas Instruments Incorporated Stacked interdigitated lead frame assembly
JPS6092636A (ja) * 1983-10-27 1985-05-24 Toshiba Corp 半導体装置の製造方法
JPS60115247A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置
JPS61208245A (ja) * 1985-03-13 1986-09-16 Kyushu Hitachi Maxell Ltd 半導体装置のリ−ドフレ−ム製造方法
JPS62108534A (ja) * 1985-11-06 1987-05-19 Nec Corp 半導体装置
US4977441A (en) * 1985-12-25 1990-12-11 Hitachi, Ltd. Semiconductor device and tape carrier
JPH0682705B2 (ja) * 1986-03-10 1994-10-19 株式会社東芝 半導体装置の実装方法
JPS62296431A (ja) * 1986-06-17 1987-12-23 Alps Electric Co Ltd フリツプチツプの接続方法
JPS6373644A (ja) * 1986-09-17 1988-04-04 Fujitsu Ltd 半導体装置の製造方法
US4885630A (en) * 1986-10-27 1989-12-05 Electric Power Research Institute High power multi-layer semiconductive switching device having multiple parallel contacts with improved forward voltage drop
US4839713A (en) * 1987-02-20 1989-06-13 Mitsubishi Denki Kabushiki Kaisha Package structure for semiconductor device
JP2623578B2 (ja) * 1987-07-14 1997-06-25 日本電気株式会社 半導体集積回路装置
JPS6473734A (en) * 1987-09-16 1989-03-20 Nec Corp Tape carrier
JPH01207938A (ja) * 1988-02-15 1989-08-21 Nec Corp 半導体装置
JPH01276750A (ja) * 1988-04-28 1989-11-07 Matsushita Electric Ind Co Ltd 半導体装置
JPH0233929A (ja) * 1988-07-23 1990-02-05 Nec Corp 半導体装置
JPH0266953A (ja) * 1988-08-31 1990-03-07 Nec Corp 半導体素子の実装構造およびその製造方法
US5016082A (en) * 1988-09-16 1991-05-14 Delco Electronics Corporation Integrated circuit interconnect design
JPH0287538A (ja) * 1988-09-26 1990-03-28 Hitachi Ltd テープキャリアモジュール
JP2651608B2 (ja) * 1988-10-28 1997-09-10 イビデン株式会社 電子部品搭載用基板
JPH02119252A (ja) * 1988-10-28 1990-05-07 Nec Corp 混成集積回路装置
JPH02208957A (ja) * 1989-02-09 1990-08-20 Toshiba Corp 電子機器用封着材料
US4922322A (en) * 1989-02-09 1990-05-01 National Semiconductor Corporation Bump structure for reflow bonding of IC devices
US4948645A (en) * 1989-08-01 1990-08-14 Rogers Corporation Tape automated bonding and method of making the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102646637B1 (ko) * 2022-12-07 2024-03-12 주식회사바텍 엑스선 소스용 전압변환장치

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