KR930009047A - 개량된 리드를 갖는 반도체장치 - Google Patents

개량된 리드를 갖는 반도체장치 Download PDF

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Publication number
KR930009047A
KR930009047A KR1019920018856A KR920018856A KR930009047A KR 930009047 A KR930009047 A KR 930009047A KR 1019920018856 A KR1019920018856 A KR 1019920018856A KR 920018856 A KR920018856 A KR 920018856A KR 930009047 A KR930009047 A KR 930009047A
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South Korea
Prior art keywords
semiconductor device
film
lead
palladium
die pad
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KR1019920018856A
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KR960002495B1 (ko
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가즈또 쓰지
요시유끼 요네다
준이찌 가사이
미찌오 소노
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세끼자와 다다시
후지쓰 가부시끼가이샤
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Publication of KR930009047A publication Critical patent/KR930009047A/ko
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Publication of KR960002495B1 publication Critical patent/KR960002495B1/ko

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Abstract

반도체칩(2)과, 상기 반도체칩(2)이 탑재된 다이패드(3)와, 상기 다이패드(3)과 반도체칩(2)을 봉지하는 패키지(6) 및 상기 반도체칩(2)에 전지적으로 접속돼있고 상기 패키지(6)로부터 돌출된 복수의 리드(4)를 구비하고 상기 각 리드(4)가 순도 99%이상의 순수니켈(Ni)로 된 리드본체(4-1)와 그 위에 형성된 팔라듐(Pd)으로 된 제1막(7)을 갖고 있는 것을 특징으로 하는 반도체장치.

Description

개량된 리드를 갖는 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 의한 반도체 장치를 나타낸 횡단면도
제2도는 제1도에 도시된 반도체 장치의 제조에 사용되는 리드후레임(lead frame)을 나타낸 평면도
제3도는 팔라듐(Pd)으로 도금된 리드후레임을 나타낸 평면도

Claims (12)

  1. 반도체칩(2)과, 상기 반도체칩(2)이 탑재된 다이패드(3)와, 상기 다이패드(3)과 반도체칩(2)을 봉지하는 패키지(6) 및 상기 반도체칩(2)에 전지적으로 접속돼있고 상기 패키지(6)로부터 돌출된 복수의 리드(4)를 구비하고 상기 각 리드(4)가 순도 99%이상의 순수니켈(Ni)로 된 리드본체(4-1)와 그 위에 형성된 팔라듐(Pd)으로 된 제1막(7)을 갖고 있는 것을 특징으로 하는 개량된 리드를 갖는 반도체장치.
  2. 제1항에 있어서, 팔라듐(Pd)으로 된 제1막(7)의 두께가 0.1~1.5㎛인 것이 특징인 개량된 리드를 갖는 반도체장치.
  3. 제1항에 있어서, 팔라듐(Pd)으로 된 제1막(7)이 상기 리드본체(4-1)의 적어도 일부상에 형성돼 있고, 상기 리드(4)가 회로기판에 납땜될 때 상기 일부가 땜납과 접촉되는 것이 특징인 개량된 리드를 갖는 반도체장치.
  4. 제1항에 있어서, 팔라듐(Pd)으로 된 제1막(7)이 상기 리드(4)의 절단면(P2)을 제외한 상기 리드본체(4-1)의 전면상에 형성돼 있고, 상기 절단면(P2)들은, 팔라듐(Pd)으로 된 상기 제1막(7)을 형성한 후에 상기 각 리드(4)상에 형성된 것이 특징인 개량된 리드를 갖는 반도체장치.
  5. 제1항에 있어서, 상기 패키지(6)의 구성재료의 열팽창계수가 순수니켈(Ni)의 것과 거의 동일한 것이 특징인 개량된 리드를 갖는 반도체장치.
  6. 제1항에 있어서, 상기 다이패드(3)가, 순도 99%이상의 순수니켈(Ni)로 된 다이패드본체(3-1)와 그 위에 형성된 제2막(7)을 갖고 상기 제2막(7)이 팔라듐(Pd)으로 된 것이 특징인 개량된 리드를 갖는 반도체장치.
  7. 제6항에 있어서, 팔라듐(Pd)으로 된 상기 제2막(7)의 두께가 0.1~1.5㎛인 것이 특징인 개량된 리드를 갖는 반도체장치.
  8. 제6항에 있어서, 팔라듐(Pd)으로 된 상기 제2막(7)이 상기 다이패드본체(3-1)전면상에 형성된 것이 특징인 개량된 리드를 갖는 반도체장치.
  9. 제6항에 있어서, 상기 리드본체(3-1)의 일부상에 은(Ag)으로 된 막(23)이 형성돼 있고, 상기 일부에 상기 다이패드(3)상에 탑재된 상기 반도체칩(2)에 접속된 배선(5)이 접속된 것이 특징인 개량된 리드를 갖는 반도체장치.
  10. 제9항에 있어서, 은(Ag)으로 된 상기 막(23)의 두께가 1.0~10㎛ 범위내인 것이 특징인 개량된 리드를 갖는 반도체장치.
  11. 제6항에 있어서, 상기 리드본체(3-1)의 일부상에 금(Au)으로 된 막(23)이 형성돼 있고, 상기 일부에 상기 다이패드(3)상에 탑재된 상기 반도체칩(2)에 접속된 배선(5)이 접속된 것이 특징인 개량된 리드를 갖는 반도체장치.
  12. 제11항에 있어서, 금(Au)으로 된 상기 막(23)의 두께가 1.0~10㎛범위내인 것이 특징인 개량된 리드를 갖는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920018856A 1991-10-14 1992-10-14 개량된 리드를 갖는 반도체장치 KR960002495B1 (ko)

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