KR900001004A - 플라스틱 캡슐형 멀티칩 하이브리드 집적회로 - Google Patents

플라스틱 캡슐형 멀티칩 하이브리드 집적회로 Download PDF

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KR900001004A
KR900001004A KR1019890007245A KR890007245A KR900001004A KR 900001004 A KR900001004 A KR 900001004A KR 1019890007245 A KR1019890007245 A KR 1019890007245A KR 890007245 A KR890007245 A KR 890007245A KR 900001004 A KR900001004 A KR 900001004A
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integrated circuit
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leadframe
bonding
chip
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KR1019890007245A
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KR970005724B1 (ko
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디. 홉슨 래리
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원본미기재
버어 브라운 코오퍼레이션
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    • H01L23/495—Lead-frames or other flat leads
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

내용 없음.

Description

플라스틱 캡슐형 멀티칩 하이브리드 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 플라스틱 인캡슐레이션(plastic encapsulation) 이전에 본 발명인 하이드리드 집적회로의 부분 평면도.
제2도는 제1도에 도시된 하이브리드 집적회로의 제조에 사용되는 리드 프레임의 평면도.
제3도는 다수의 절연성 필름 기판들이, 그 위에 형성된 금도금된 금속부를 분리시킨 상태로 연속 펀칭되는 가요성 절연 리본 테이프의 부분 평면도.
제4도는 플라스틱 인캡슐레이션 이후에 제1도 장치의 부분도.
제5도는 제1도의 하이브리드 집적회로의 부분 사지 분해도.

Claims (6)

  1. (a) 다수의 리드프레임 핑거와 핑거로 둘러 싸인 리드프레임 플래그 ; (b) 리드프레임 플래그의 표면에 접착된 절연필름, 리드프레임 플래그 표면의 영역을 노출시키는 필름내의 컷아웃, 금속성 제1플래그를 포함하는 절연필름상이 다수의 금속영역, 및 다수의 각 금속 본딩 스트립 ; (c) 제1플래그에 다이본드된 제1집적회로칩, 및 노출영역에 다이본드된 제2집적회로칩 ; (d) 제1 및 제2집적회로칩중 하나의 본딩패드와 본딩 스트립중 하나 사이에 각각 연결된 다수의 본딩 와이어 ; (e) 핑거, 리드프레임플래그, 제1 및 제2집적회로칩, 금속영역, 및 본딩와이어를 포함하는 부피를 채우는 플라스틱 인캡슐레이션으로 구성되는 것을 특징으로 하는 하이브리드 집적 회로.
  2. 제1항에 있어서, 제2집적회로칩이, 필름에 다이본드되었다하더라도, 필름을 통하여 열전도될 수 있는 것보다 더 큰 전력을 소비하는 것을 특징으로 하는 하이브리드 집적회로.
  3. 제2항에 있어서, 필름이 유리에폭시 물질로 구성되는 것을 특징으로 하는 하이브리드 구성회로.
  4. 제2항에 있어서, 금속영역이 금도금 구리 포일물질로 구성되는 것을 특징으로 하는 하이브리드 집적회로.
  5. 제2항에 있어서, 제1집적회로칩이 MOS집적회로이고, 제2집적회로는 바이폴라 집적회로인 것을 특징으로 하는 하이브리드 직접회로.
  6. (a) 다수의 리드프레임 핑거와 둘러 싸인 리드프레임 플래그 ; (b) 리드프레임 플래그 표면의 제1영역에 부착된 절연필름 ; 노출되어 있는 리드프레임 플래그 포면의 제2영역, 다수의 각 금속본딩 스트립을 포함하는 절연필름 상이 다수의 금속영역 ; (c) 제2영역에 다이본드된 칩 ; (d) 칩의 본딩패드와 본딩스트립중 하나 사이에 연결된 다수의 본딩와이어 ; (e) 핑거, 리드프레임 플래그, 칩, 금속영역, 및 본딩와이어를 포함하는 부피를 채우는 플라스틱 인캡슐레이션으로 구성되는 것을 특징으로 하는 하이브리드 직접회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890007245A 1988-06-02 1989-05-30 플라스틱 캡슐형 멀티칩 하이브리드 집적회로 KR970005724B1 (ko)

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US20158988A 1988-06-02 1988-06-02
US201,589 1988-06-02

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KR970005724B1 KR970005724B1 (ko) 1997-04-19

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JP (1) JPH0712071B2 (ko)
KR (1) KR970005724B1 (ko)
DE (1) DE3916980A1 (ko)
FR (1) FR2632454A1 (ko)
GB (1) GB2219435B (ko)

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JP2582013B2 (ja) * 1991-02-08 1997-02-19 株式会社東芝 樹脂封止型半導体装置及びその製造方法
JPH02201949A (ja) * 1989-01-30 1990-08-10 Toshiba Corp 半導体装置
EP0506122A3 (en) * 1991-03-29 1994-09-14 Matsushita Electric Ind Co Ltd Power module
US5491360A (en) * 1994-12-28 1996-02-13 National Semiconductor Corporation Electronic package for isolated circuits
US7625286B2 (en) 2004-05-06 2009-12-01 Sony Computer Entertainment Inc. Electronic device and a game controller
DE102005014746A1 (de) 2005-03-31 2006-10-05 Friwo Mobile Power Gmbh Aktive primärseitige Schaltungsanordnung für ein Schaltnetzteil
DE102006033175A1 (de) * 2006-07-18 2008-01-24 Robert Bosch Gmbh Elektronikanordnung
JP6420617B2 (ja) 2014-09-30 2018-11-07 ルネサスエレクトロニクス株式会社 半導体装置

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EP0015053A1 (en) * 1979-01-27 1980-09-03 LUCAS INDUSTRIES public limited company A method of manufacturing a semi-conductor power device assembly and an assembly thereby produced
JPS6041249A (ja) * 1983-08-17 1985-03-04 Nec Corp 混成集積回路装置
JPS60207358A (ja) * 1984-03-30 1985-10-18 Nec Kansai Ltd ハイブリツドｉｃ
JPS6292653U (ko) * 1985-11-29 1987-06-13

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KR970005724B1 (ko) 1997-04-19
FR2632454A1 (fr) 1989-12-08
GB8911054D0 (en) 1989-06-28
JPH0232558A (ja) 1990-02-02
DE3916980A1 (de) 1989-12-14
GB2219435B (en) 1991-07-03
JPH0712071B2 (ja) 1995-02-08
GB2219435A (en) 1989-12-06

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