JPS5928553A - 耐食性アルミニウム配線材料 - Google Patents

耐食性アルミニウム配線材料

Info

Publication number
JPS5928553A
JPS5928553A JP57138608A JP13860882A JPS5928553A JP S5928553 A JPS5928553 A JP S5928553A JP 57138608 A JP57138608 A JP 57138608A JP 13860882 A JP13860882 A JP 13860882A JP S5928553 A JPS5928553 A JP S5928553A
Authority
JP
Japan
Prior art keywords
wire
alloy
corrosion
thin
noble metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57138608A
Other languages
English (en)
Other versions
JPH0365424B2 (ja
Inventor
Hitoshi Onuki
仁 大貫
Masateru Suwa
正輝 諏訪
Masahiro Koizumi
小泉　正博
Osamu Asai
治 浅井
Katsumi Suzuki
勝美 鈴木
Makoto Hiraga
平賀　良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57138608A priority Critical patent/JPS5928553A/ja
Priority to KR1019830003637A priority patent/KR910003574B1/ko
Priority to CA000434214A priority patent/CA1223138A/en
Priority to DE8383304626T priority patent/DE3367137D1/de
Priority to EP83304626A priority patent/EP0101299B1/en
Priority to US06/521,899 priority patent/US4912544A/en
Publication of JPS5928553A publication Critical patent/JPS5928553A/ja
Publication of JPH0365424B2 publication Critical patent/JPH0365424B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
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    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （発明の対象） 本発明は新規なアルミニウム合金からなる重子材料及び
それを用いた半導体装置に関する。
（従来技術） 従来、半導体素子上に形成されｆＣＡｔ蒸着膜からなる
配線膜と外部リードとの接続はＡ　ｕ　＜ｍ線が用いら
れ、そのボールボンデング法による熱圧着によって行わ
れている。近年、Ａｕ、ｒかの代りに安価なＡ７細線を
１史用する検討が１−ｊわ扛ている。しかシフ、エポキ
シ樹脂等の合成１′市脂によって刺止きれる半導体装置
では、Ａｚ＝＊ｒｌ線やＡｔ蒸、７８膜に腐食が生じる
ことが問題となっていた。捷た、Ａｔ蒸Ｍ膜も同様の問
題が生じることが懸念芒れる。
即ち、合成樹脂とＡ４細線及びＡｔ蒸着膜との界面ｆ’
）ｉ＠シて水分が侵入するため、合成（ｑ１脂中に含１
れる塩素イオンやアミンが遊離し、こ肛らがＡｔ、↑曲
線及びＡｔ蒸着膜の腐食を促進するものと考えられる。
改良されｆ　Ａ　ｔ　１１１１，１ｌｔｉｌｌとして、
ＣＵ　３〜５−１’ｉ　ｉｇ％を含むＡ、ｔ−Ｃｕ合金
が特開昭５６−１６６４７号公報で知られているが、Ａ
ｔに対するｃｕの添加によっても合成本’ｔｔ脂に対す
る耐食性の向上（は得らｇない。
また、改良されｆＣＡｔ蒸着膜として、ＭｎＯ，０５〜
６１’Ｒ，量％を含むＡ４合金が特開昭５１−１４２９
８８号公報で知ら汎ているが、Ｍｎ（（添カ■したＡｔ
蒸着膜では、Δ１ｎはＡｔ、ｌニジ比較的活性な卑な金
属であるため、光面が厚い酸化膜で被われ、Ａｔワイヤ
との接合性（ボンダビリティ）が悪くなるという問題が
ある。
（発明の要点） （１）発明の目的 本発明の目的はボンダビリティを低めることなく面１食
性のより優扛たアルミニウム電子材料を提供するにある
。更に、本発明の目的は樹脂に対する耐食性がより優れ
たＡｔ合金を用いた半導体装置を提供するにある。
（２）　　発明の説明 本発明は、アルミニウムを主成分とし、これに貴金属を
含む合金からなり、前記霞金属の含有量が初晶アルミニ
ウムを有する共晶点以下であること全特徴とする耐食性
アルミニウム電子材料にある。
アルミニウムは大気中では安定な不動態皮膜が形成され
易く、一般には耐食性が良好な金属である。しかし、Ａ
ｔは樹脂でパッケージされている半導体装置のように樹
脂に接触している場合には、樹脂中に含まれる塩素イオ
ンやアミンにより不・’ｉｉｊ態皮膜が破壊され、腐食
を受ける。そこで本発明者等げＡｔ（７）８食原因につ
いて検討した結果、Ａｔに、Ａｔよりもきわめて水素過
電圧が小さい貴金属を含有σせることにより腐爬會防止
できることケ見い出した。Ａｔより水累過市、圧がきわ
めて小さい霞金属とＡｔとの合金は、最、初Ａｔが溶解
しｔとしても、水素過電圧の小豆い貴金属が１１う気化
学的に責であるため衣面部に一縮場れる。従って合金の
溶解が進むにつれて合金自体の水素過ｒｈ；圧が漸次小
ζくなり、合金の電位がＳｔになるので合金自体の不動
態化が起るものと考、舜−ら才りる。
本発明のＡ４合金にそれ自体酸化皮膜全形成しにくい責
な金属を含むので、同相接合にも・けるボンダビリティ
がＡ７のそれと同程度のものが得られる。
（３）貴金属 Ａｔより水素過電圧がきわめて小埒い貴金属として、白
金（Ｐｉ）、パラジウム（Ｐｄ）、ロジウム（Ｔｔｈ）
、イリジウム（Ｉｒ）、オスミウム（Ｑｓ）、ルテニウ
ム（Ｒｕ　）ｌ金（Ａｕ　）及び欽（Ａｇ）があり、こ
ｎらの１種以上を含むことができる。こｎらの貴金属は
、その他の金属に比らべて水素過′ルＬ圧がきわめて小
さく、それ自体きわめて優れた耐食性を有するので、Ａ
ｔ合金表面への不動態皮膜の形成が促進さ扛、耐食性を
顕著に向上させる。特に、ｐｄ、ｐ’、ｔ、ｌｌ（、ｕ
がｆｌ、’　ｎ　％ｐｄが最も良い。
２規定の硫酸浴液中における水素過電圧を小さいｊ（旧
から並べると以下のとおりである。ｉＪ　ｄｌＩ）ｔ、
Ｒ＋ｕ、＆Ｏ８，Ｉ　ｒ、　ＦＬｈ、Ａｕ、Ａｇ。
Ｎｉ、Ｗ、　Ｍｌｌ　Ｆｅ、Ｃｒ、Ｃｕ、Ｓ　ｉ、Ｔｉ
。
ｈｔ、Ｍｎｃ＋ （４）含有量 Ａｔよシ水累過電圧がｌ」・さい貴金属の含有量は、初
晶Ａｔを有する共晶点以下でなければならない。
水素過１ｄ圧の小さい貴金属とＡｔとの化合物が初晶と
して晶出すると粗大なものになり、その後の塑性加工で
は晶出物は細η）くなシにくい。Ａｔ基地は軟いので硬
い金属は塑性加工で分断されにくいためである。その定
め、水素過電圧の小さい貴金属は初晶Ａｔを含む共晶点
以下であ扛ば共晶として細かく晶出し、塑性加工性の高
いものが得ら扛、更に固４１接合における高い接合性が
得られる。
特に、塑性加工性及び接合性の高いものを得るには１棟
又は２種以上の総量で０．０１〜１０重量％が好ましく
、高い耐食性、塑性加工性及び同相で接合するボンダビ
リティ金有するＡｔ合金を得るには１棟又は２棟以上の
総量で０．０５〜３軍量％が好ましい。各二元合金の共
晶点は、重量でＰ　ｄ　２５％、Ｐｔ９．０％、Ａｕ５
．０％、Ａｇ７０．５％である。
（５）合成樹脂 本発明のＡｔ合金は合成樹脂に接触して使用されるもの
に好適である。合成樹脂は大気中の水分と反応して塩素
イオン、アミン等の腐食性物質を遊離し、金属全腐食す
る。本発明のＡｔ合金は合成樹脂で掴止さ７．シるレジ
ンモールド型半導体装置のボールボンデング用ワイヤ及
び配線膜に好適である。
この種の半導体装置には、エポキシ樹脂、フェノール樹
脂、メラミン樹脂、尿素樹脂、ジアリルフタレート樹脂
、不飽和ポリエステル樹脂、ウレタン樹脂、付加型ポリ
イミド樹脂、シリコーン樹脂、ポリバラビニルフェノー
ル樹脂などの熱硬化性樹脂、フッ素樹脂、ポリフェニレ
ンスルフィド。
ポリエチレン、ポリスチレン、ポリアミド、ポリエーテ
ル、ポリエステル、ポリアミドエーテル。
ポリアミドエステルなどの熱可塑性樹脂が用いらｎる。
半導体装置用封止材料としてはエポキシ樹脂が特に好ま
しい。
（６）ポールボンデング用ワイヤ 本発明のＡｔ合金からなる極細線はその先端にボールを
形成し、そのボールを半導体素子上に形成された配線膜
に固相接合し、他端を外部リード端子に固相接合するポ
ールボンデング用ワイヤに４１効である。
極細線は直径１０〜１００μｍが好ましい。合金中の金
属間化合物は直径１μｍ以下が好ましく、特に、サブミ
クロンとなるようにするのが好ましい。このような１ｔ
ヌハ刊線においては、金属間化合物が大きな塊シとして
存在すると［ｒ３」じ畠退刀日；【（でも重重食性の向
上に対する効果が小さい。
ナブミクロンの微細な金属間化合物全形成させるには６
解後の塑性カ１１工によって行うことができるが、特に
その化合物の大きさは溶解後の溶湯の冷却速度によって
大きな影響を受けるので、浴湯からの急冷によって微細
な金属間化合物とすることができる。溶湯からの冷却蓮
度は２０ｃ／秒以上が好ましい。冷却手段は水冷銅鋳型
を使用する方法、溶湯全水冷鋳型で凝固し、その直後水
冷して連続鋳造する方法等によって行うことができる。
ワイヤの太きは、添〃口する合金元素の棟類によって異
なるが、７時に直径２０〜７０μｍが好ましい。コ１７
）中で、特に比抵抗等全考慮してワイヤ径が選定さｎる
。
ワイヤは前述のように合金元素金含むので、焼なましさ
でしたものが好ましい。焼なまし温度は、再結晶謳度以
上であることが好ましく、特に弾性変形しない程度に　
　−一゛ 主弁全焼なましするのが′好ましい。ワイヤは局部的に
硬さが異なるとボンデングにおいて局部的な変形を生じ
るので、ボール形成において局部的な加熱金堂け、局部
的な軟化が生じないように全体に同じ硬さを有するよう
に軟化していることが好ましい。焼なまし温度は、１５
０〜６００Ｃが好ましい。焼なましは非酸化性雰囲気中
で行うのが好ましい。最終焼な１しは１５０〜３００Ｃ
が好ましい。
ワイヤは加工したままのものを回路素子に接合するとき
に焼なましすることができるがζ予め焼な１しさｎたも
のをボンデングする方がはるかに能率的である。
ワイヤは、室温の比抵抗が１５μΩ・Ｑｎ以下のものが
好ましい。
（′Ｉ）　　ポール形成 ボールボンデングにおけるボールは、キャピラリーに保
持されたワイヤ先端を゛放電、水素火炎。
フラズマ、アーク、レーザービーム等の〃１１１手段に
よって溶融し、自らの表面張力によって形成さ１する。
特に、ワイヤ自体と他の電極との間（で■空又（１不活
性ガス雰囲気中で、アーク放電又（は火花放電ケ起させ
る方法によればボールを短時間で形成をせ、酸化膜の形
成全防止でへるので、好せしい。このアーク放電又は火
花放電にワイヤ’Ｋｒマイナスとして行うことによりそ
の表面に酸化膜のない清浄なボールができ、かつ（ｆ”
ｆｉ心のないボールが形成きれる。ｔた、アーク放電又
は火花放電において正及び負の少なくとも一方のパルス
電流を流すこともでき、このパルス電流によってポール
形成に必要な適正なアーク又は火花発生時間全コントロ
ールすることができる。正負の電θ１ｔヲ流す場合には
、ワイヤ表面のクリーニングに必要なＨ＞間とポール形
成に必要な時間と全正負の時間比ｋＶえることによって
コントロールすることができる。
クリーニングに必要な時間は全放電時間の１０〜３０％
が好ましい。
ポール形成における加熱溶融万囲気は非酸化性雰囲気が
好ましい。特に、不活性ガス中に少量、好ましくは５〜
１５体積％の還元性ガス（例えば水素ガス）を含むもの
が好ましい。特に、水素ガスを５〜１５体積％を含むア
ルゴン、ヘリウムなどの不活性ガスが好ましい。
ボール径はワイヤ径の１．５〜４倍が好ましく、特に２
．５〜３．５倍が好捷しい。
（８）ボンデング ボンデングには、ポールボンデング及びウェッジボンデ
ングがあシ、超音波接合又は熱圧着によって行われるが
、回路素子が半導体素子である場合は、接合間隔に制限
があるので、ポールボンデングが好ましく、外部端子の
場合は、高能率のウェッジボンデングが好ましい。
回路素子に接合後のワイヤはキャピラリーに保持された
形で引っ張ることによって回路素子の接合部近傍で切断
される。
ワイヤは前述のように細径なので、これを保護するため
に半導体素子とワイヤと外部端子の一部を樹脂の他にセ
ラミックスで被うことが行わｎる。
樹脂は液体を注型（キャスティング）又は成形（モール
ド）し硬化させ、セラミックスは通常の方法でキャップ
シール接合される。
（９）配線膜 本発明のＡ４合金η・らなる薄膜は半導体素子の外部リ
ードへの接続＋Ｌ＋ｆＭ子とする配線膜に特に有効であ
る。薄膜の形成には蒸着、スパッタリング等の従来方法
が用いられる。配線膜は幅約数〜数十μｍ、厚さ数μｍ
を有する。
実施例１ 純度９９．９９％の純Ａ７及び純度９９．９％の１）　
ｄを用い、Ｐｄ含有和０，０．０１，０．１，０．５゜
１．５，７．１ｏＭ量％のＡ７合金を、水冷銅鋳型を用
い、Ａｒ雰囲気中でアーク溶解によって溶解した。次い
で合金中のｐ　ｄ　？合金中に均一に同浴をせるため５
８０Ｃで２４時間加熱するノーキング処理音節した後急
冷し、５８０ｔｌ？で２時間加熱する焼鈍を間に入れて
室温で圧延又はスェージングによシ厚芒１陥の板及び直
径１間の線を各々製造した。加工後、いず扛も２００Ｃ
で最終焼鈍を施した。なお、７％及び１０％のＰｄを含
むＡ４合金は前述の圧延及びスェージング加工がＰｄ郊
：のより少ないものに比らべ困難でめった。
５％以下のＰ　ｄ　ｆｆｉ含むＡ７合金の加工性はいず
れも純Ａ７よりもわずかに劣る程度で、容易に加工する
ことができる。
第１図はＡｔ−１％Ｐｄ合金の倍率２０，０００の顕微
鏡写真である。組織の中の白い部分がＡ４−ｐｄ金属間
化合物であり、その大きさは太きいものが直径約１μｍ
１小さいものが直径約０．２μｍ″ｃあり、きわめて微
細で、マトリックス中に均一に分散していることがわか
る。
第２図は、１１００ｐｐの塩素イオンを含むｐＨ３の硫
酸溶液（２０ｔＺ′）中で測定したＡｔ−１％Ｉ’　ｄ
合金と純Ａｔの分極曲線である。純Ａｔは、Ｅ圧が商く
なる程電流密度が壇太し鳥食量が増加するのに対し、本
発明のＡｔ−１％Ｐｄ合金は電圧が増加しても電流密度
が増大せず逆に減少する領域すなわち不ｊＸＩＩ態領域
（斜線部分）が存在することがわかる。この領域は合金
表面に不動態皮膜が形成式れることを意味する。
同様に、０．０１，０．１，０．５，５．７及び１０％
のＰｄを含む合金の場合も不動態領域が存在することが
認められ、更にＰｄ量が多いほど不動態領域が広がるこ
とがわかった。
第２図に示す分極曲線からＡ１算した腐食速度は純Ａｊ
（９９，９９努、以上）が約０．００５闘／年。
及び１％Ｐｄ合金が０．００１１ｍｍ／年であり、本発
明合金の腐食宋度は純Ａｔの５分の１で、きわめて腐食
敏が少ないことがわかる。
前述と同様に、小量で１努＋Ｓｉ、、１’！？・ＮＩ及
び１％Ｍ　ｇ　ｋ含むＡｔ合金の板全製遺し、こ７Ｌら
の合金についても分極曲線を求めた。各分極曲線ビいず
ｎも純Ａｔと同様の曲線を示し、それらの曲線から年間
腐食−：を求めた結果、それぞれ０００５配／年、０．
００４＋ｎｍ／年及び０．００７ｙ＋Ｉｍ／年であった
。分極面＋ｌｉ！は、面イ青１（７７１２を有する試料
全塩素イオン１０１００ｐｐ含むｐＨ３の硫酸溶液中（
２５Ｃ）で測定したものである。
実施例２ いずれも１重量％のＳｉ、ＰＬ、Ｐｄ、Ｒ，ｈ。
Ｒｕ、Ｏｓ及びＡｕ２含むＡｔ合金を実施例１と同様に
アーク溶解し、実施例１と同様にしてスェージング加工
後、線引き焼鈍全く９返すことによシ直径５０μｍのワ
イヤを製造した。合金元素としていずれも９９．９９％
以上の純度を有するものを用いた。扁３〜９は本発明合
金及びＡ２のＡ４−１％Ｓｉ合金は比較のものである。
表は、各ワイヤについて、８５Ｃ及び湿度９０％の雰囲
気中で１０００時間保持による高温多湿試験後の引張試
験による伸び率及びその試験前の伸び率を示すものであ
る。
表 表に示すように、本発明のＡ３〜８のＡ４合金の純Ａｔ
及び１％Ｓｉ合金に比らべ試験後の伸び率がいずれも高
いことがわかる。
同様に、ｐ　ｔ、ｌ）ｄ、　Ｒｈ、几ｕ、Ｑｓ及びＡｕ
の含有量ヲ各々０．１，０．５．５％にしたＡ７合金か
らなる直径５０μｍのワイヤについて試験した結果、い
ずれも１％含有Ａ、　を合金と同程度の伸び率であった
。
実施例３ 第３図は、実施例２で製作した直径５０μｍの純Ａ４．
Ａｔ−１％３ｉ及びＡ７−１％ｌ）　ｄ合金からなるワ
イヤを用いた代表的なレジ／モールド型半導体装置の断
面図である。このレジンモールド型半導体装置を各ワイ
ヤについて５０個製作した。各ワイヤはボール形成前に
いずれも２００〜３００Ｃで最終焼鈍した不完全焼鈍し
たもの音用いた。
各Ａｔワイヤ１はＡ４蒸着膜８が設けられた半導体素子
３にボールボンデングされ、Ａｇめっき層１０が設けら
れたリードフレーム４にウエッジボンデングされる。ボ
ールボンデングさ扛だ後、５ｔ（）を等の保護皮膜１３
が設けら扛、その後型を使って液状のエポキシ樹脂を流
し込み、硬化させることによ９図の半導体装置が形成さ
れる。リードフレームににＣｕ又はＦｅ−４２％Ｎｉ合
金が用いられる。
ボンデングのためのボール７の形成は第４図に示すよう
にキャピラリー２にｋｔワイヤを押し出し、火花放電に
よる方法によって行われる。前述の各Ａ７ワイヤを、真
空排気した後、７％（体積）の水素を含むＡｒガス雰囲
気で置換した雰囲気中で、１００ＯＶ、１〜５Ａの放電
条件でワイヤ１と電極５との間に１ミリ秒以下の短時間
放電させて、その先端に真球のボールを形成させた。放
電は、Ｗからなる電極５とワイヤとの間で行われる。
放電は得られたボールは第５図に示すようにキャピラリ
ー２によって半導体素子上に形成されたＡ　／、蒸着膜
８にワイヤと蒸着膜との摩擦によって行う超音波接合に
よってボールボンデング＋行い、次いで、他端を同じく
キャピラリー２によってリードフレーム４のＡｇめっき
層に同じく超音波接合によつ−Ｃウエッジボボンデング
行った。この超音波接合による本発明合金の接合１ター
は純Ａｔワイヤと同程度であり、優ｎていた。
この方法によって得ら九た本発明合金からなるボールは
わずかにワイヤバ１方向に長いた壕と形のものが形成芒
れたが、良好な真球に近いものであった。本発明合金の
ボールは表面に光沢があり、更にきわめて滑らかで、ワ
イヤ自体の硬さとほぼ等しく、図に示すようにきｎいな
ループ状のボンデングが得られることが確認された。！
、た、クエツジボンデング後のワイヤの切断はキャピラ
リー２を持ち上げて引張ることによって行わ肚るが、そ
の切断もワイヤが軟いためきわめて容易で、史にその引
張りによってボンデング部分を剥離するようなことも全
く起らなかった。
以上のようにして製作した各５０個のレジンモールド型
半導体装置ｉ、１２０Ｃ，２気圧の水蒸気中に１６０時
間放置するプレツシャクツカーテス）（ＰＣ’ｌ’）試
験し、リード線の腐食断線、素子の誤動作等による不良
率を測定した。その結果を第６図に示す。図よシ純Ａｔ
及びＡｔ−１％Ｓｉ合金からなるものはいずれも５〜１
０％の不良率が生じたのに対し、本発明のＡｔ−１％Ｐ
ｄ合金からなるものは０．２％程度の不良率であシ、著
しく耐食性が優れていた。
実施例４ 実施例３の第３図で示したＡｔ蒸着膜８の代シに、実施
例１で製造した厚さ１ｇのＡｔ−１％ｐｄ合金及び実施
例３で示したＡｔ−１％Ｓｉ合金の厚さ１ｒｎ１ｎの板
を各々蒸着源として使用し、厚さ１μｍの蒸着膜をＳｉ
半導体素子上に形成し、実施例２と同様のＰＣＴ試験１
１ｆ：５ｏｏ′時間行った。
蒸着条件は、いずれも基板温度２００Ｃ，真空度２〜２
０Ｘ１０−’）ル、蒸着速度２００人／秒である。試験
後、走査型電子顕微鏡にょシ蒸着膜の底面状態を調べた
結果、Ａｔ−１％Ｓ　ｉ合金は粒界から優先的に腐食が
進行していたのに対し、本発明のＡｔ−１％ｐｄ合金は
ほとんど腐食さｎていなかった。なお、蒸着膜の組成は
ほぼ合金組成と同じであった。
実施例５ 実施例３の第３図で示したＡｔ蒸着膜の代りに実施例４
に示したと同様に１μｍの厚さのＡｔ−１％］’　ｄ　
蒸着膜を形成するとともに、第３図のワイヤ１として実
施例２で得た直径５０μｍのＡｔ−１％Ｐｄ合金線を用
い、実施例３に示したのと同様にボールボンデング及び
ウェッジボンデングを行い、更に実施例３と同様にエポ
キシ位１脂で封止したレジンモールド型半導体装置を５
０個製作し、そのＰ　Ｃ’Ｉ’試験を１６０時間実施し
た。その結果、不良となったものは全くなく、きわめて
優れた耐食性を有することがわかった。
（本発明の効果） 以上の如く、本発明のＡＪａ合金によれば塩素イオンに
対する高い耐食性が得ら扛る。特に、本発明はレジンモ
ールド型半導体装置のボールボンデング用ワイヤ及び配
線膜として優れた効果が得られる。
【図面の簡単な説明】
第１図は本発明のＡ４合金の顕微鏡写真、第２図（−ｉ
分極曲線を示す線図、第３図は代表的なレジンモールド
型半導体装置の断面図、第４図はアーク放電によるボー
ル形成装置のボール形成部分断面図、第５図はボールボ
ンデングさｆｌ、た状況を示す半導体装置の部分け［面
図、第６図はＰＣＴ試験の不良率を示す線図である。 １・・・ワイヤ、２・・・キャピラリ、３・・・Ｆ３ｒ
素子、４・・・リードフレーム、５・・・Ｗ電極、６・
・・はんだ、７・・・ボール、８・・・Ａｔ蒸眉膜、９
・・・低融点ガラス、１０・・・Ａｇめつき層、１１・
・・Ｗ電極の移動方向、１２・・・樹脂。 〒１ｆ 第　１　ｚ 覧流憩度　（ＮＡ　／　ｃｙｙｔ２） 第３７ 第４−凶

Claims (1)

  1. 【特許請求の範囲】 １、　アルミニウムを主成分とし、これに貴金属を含む
    合金からなシ、前記貴金属の含有量が初晶アルミニウム
    を有する共晶点以下であることを特徴とする耐食性ア、
    ルミニウム電子材料。 ２、前記貴金属は白金、パラジウム、ロジウム。 イリジウム、オスミクム、ルテニウム、金、銀の１種以
    上からなる特許請求の範囲第１項に記載の耐食性アルミ
    ニウム電子材料。 ３、前記貴金属の含有量が０．０１〜１０重量％である
    特許請求の範囲第１項又は第２項のいずれかに記載の耐
    食性アルミニクム電子材料。 ４６　　前記含有量が０．０５〜３重量％である特許請
    求の範囲第３項に記載の耐食性アルミニウム電子材料。 ５、前記アルミニウム合金は合成樹脂に被われて６、前
    記アルミニウム合金からなる却１線であシ、該細線はそ
    の先端に該細線によって形成されたボールを半導体素子
    上に形成された配線膜に接合し、前記細線の他端を外部
    リード端子に接合するポールボンデング用ワイヤである
    特許請求の範囲第１項〜第５項のいずれかに記載の耐食
    性アルミニウム電子材料。 ７、前記アルミニウム合金の薄膜からなる配線膜であり
    、該配線膜は半導体素子の外部゛リードへの接続端子で
    ある特許請求の範囲第１項〜第５項のいずれかに記載の
    耐食性アルミニウム電子月料。 ８、半導体素子と、該半導体素子上に設けられた配線膜
    と、該配線膜に接合さ′ｎた金属細線と、該細線の他端
    に接合きれたリードフレームとを備え、前記半導体素子
    及び細線が合成樹脂によって被われているものに粋いて
    、前記細線及び配線膜の少なくとも一方が、アルミニウ
    ムを主成分とし、これに貴金属を含む合金からなシ、前
    記貴金属の含９、前記金属の含有量が０．０１〜１０重
    量％である特許請求の範囲第８項に記載の半導体装置。 １０、前記合成樹脂はエポキシ樹脂である特許請求の範
    囲第８項又は第９項のいずれかに記載の半導体装ｉメン
    。 １１、前記金属細線の先端に該細線によって形成された
    ポールが前記配線膜に固相接合されている特許請求の範
    囲第８項〜第１０項のいずれかに記載の半導体装置。 １２、前記金属細線は不完全焼鈍されている特許請求の
    範囲第８項〜第１１項のいずれかに記載の半導体装置。
JP57138608A 1982-08-11 1982-08-11 耐食性アルミニウム配線材料 Granted JPS5928553A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP57138608A JPS5928553A (ja) 1982-08-11 1982-08-11 耐食性アルミニウム配線材料
KR1019830003637A KR910003574B1 (ko) 1982-08-11 1983-08-03 내식성 알루미늄 전자재료
CA000434214A CA1223138A (en) 1982-08-11 1983-08-09 Corrosion-resistant aluminum electronic material
DE8383304626T DE3367137D1 (en) 1982-08-11 1983-08-10 Corrosion resistant aluminum electronic material
EP83304626A EP0101299B1 (en) 1982-08-11 1983-08-10 Corrosion resistant aluminum electronic material
US06/521,899 US4912544A (en) 1982-08-11 1983-08-10 Corrosion-resistant aluminum electronic material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57138608A JPS5928553A (ja) 1982-08-11 1982-08-11 耐食性アルミニウム配線材料

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2279043A Division JPH03148841A (ja) 1990-10-19 1990-10-19 耐食性アルミニウム電子装置

Publications (2)

Publication Number Publication Date
JPS5928553A true JPS5928553A (ja) 1984-02-15
JPH0365424B2 JPH0365424B2 (ja) 1991-10-11

Family

ID=15226057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57138608A Granted JPS5928553A (ja) 1982-08-11 1982-08-11 耐食性アルミニウム配線材料

Country Status (6)

Country Link
US (1) US4912544A (ja)
EP (1) EP0101299B1 (ja)
JP (1) JPS5928553A (ja)
KR (1) KR910003574B1 (ja)
CA (1) CA1223138A (ja)
DE (1) DE3367137D1 (ja)

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JPS6132444A (ja) * 1984-07-24 1986-02-15 Hitachi Ltd 集積回路装置
JPH01134426A (ja) * 1987-11-20 1989-05-26 Hitachi Ltd 液晶デイスプレイ駆動用薄膜トランジスタ
JPH10163519A (ja) * 1996-10-01 1998-06-19 Toshiba Corp 半導体装置及び半導体装置製造方法
CN104164591A (zh) * 2013-05-15 2014-11-26 田中电子工业株式会社 耐腐蚀性铝合金接合线

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US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
FR2566182B1 (fr) * 1984-02-24 1988-01-08 Hitachi Ltd Dispositif a semiconducteurs
FR2561445B1 (fr) * 1984-02-24 1988-03-18 Hitachi Ltd Fils de connexion d'une pastille semi-conductrice, notamment encapsulee sous resine
IT1183375B (it) * 1984-02-24 1987-10-22 Hitachi Ltd Dispositivo a semiconduttori comprendente una pallina, fili conduttori e porzioni conduttrici esterneche sono collegate alla pallina mediante tali fili conduttori
US4993622A (en) * 1987-04-28 1991-02-19 Texas Instruments Incorporated Semiconductor integrated circuit chip interconnections and methods
EP0288776A3 (en) * 1987-04-28 1989-03-22 Texas Instruments Incorporated Gold alloy wire connection to copper doped aluminum semiconductor circuit interconnection bonding pad
JP3425973B2 (ja) * 1992-08-19 2003-07-14 日本特殊陶業株式会社 スパークプラグおよびその製造方法
US5434104A (en) * 1994-03-02 1995-07-18 Vlsi Technology, Inc. Method of using corrosion prohibiters in aluminum alloy films
US6194777B1 (en) * 1998-06-27 2001-02-27 Texas Instruments Incorporated Leadframes with selective palladium plating
JP3422937B2 (ja) * 1998-07-27 2003-07-07 株式会社新川 ワイヤボンディングにおけるボール形成方法
ATE399328T1 (de) 2001-09-24 2008-07-15 Rika Denshi America Inc Elektrische testsonden und verfahren zu ihrer herstellung
US7314781B2 (en) * 2003-11-05 2008-01-01 Lsi Corporation Device packages having stable wirebonds
US8101871B2 (en) * 2009-05-26 2012-01-24 Lsi Corporation Aluminum bond pads with enhanced wire bond stability
DE102009045184B4 (de) * 2009-09-30 2019-03-14 Infineon Technologies Ag Bondverbindung zwischen einem Bonddraht und einem Leistungshalbleiterchip
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DE1210082B (de) * 1963-09-10 1966-02-03 Rheinische Blattmetall Ag UEberwiegend aus Reinstaluminium bestehende Metallfolie fuer Elektrolytkondensatoren
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US3765877A (en) * 1972-11-24 1973-10-16 Olin Corp High strength aluminum base alloy
DE2419157C3 (de) * 1974-04-20 1979-06-28 W.C. Heraeus Gmbh, 6450 Hanau Metallischer Träger für Halbleiterbauelemente und Verfahren zu seiner Herstellung
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132444A (ja) * 1984-07-24 1986-02-15 Hitachi Ltd 集積回路装置
JPH01134426A (ja) * 1987-11-20 1989-05-26 Hitachi Ltd 液晶デイスプレイ駆動用薄膜トランジスタ
JPH10163519A (ja) * 1996-10-01 1998-06-19 Toshiba Corp 半導体装置及び半導体装置製造方法
CN104164591A (zh) * 2013-05-15 2014-11-26 田中电子工业株式会社 耐腐蚀性铝合金接合线
JP2014224283A (ja) * 2013-05-15 2014-12-04 田中電子工業株式会社 耐食性アルミニウム合金ボンディングワイヤ

Also Published As

Publication number Publication date
JPH0365424B2 (ja) 1991-10-11
KR840005749A (ko) 1984-11-16
KR910003574B1 (ko) 1991-06-05
EP0101299B1 (en) 1986-10-22
US4912544A (en) 1990-03-27
EP0101299A1 (en) 1984-02-22
DE3367137D1 (en) 1986-11-27
CA1223138A (en) 1987-06-23

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