GB2093064A - External connectors or terminals - Google Patents

External connectors or terminals Download PDF

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Publication number
GB2093064A
GB2093064A GB8135741A GB8135741A GB2093064A GB 2093064 A GB2093064 A GB 2093064A GB 8135741 A GB8135741 A GB 8135741A GB 8135741 A GB8135741 A GB 8135741A GB 2093064 A GB2093064 A GB 2093064A
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GB
United Kingdom
Prior art keywords
copper
weight
ultra
wires
fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB8135741A
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GB2093064B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
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Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Publication of GB2093064A publication Critical patent/GB2093064A/en
Application granted granted Critical
Publication of GB2093064B publication Critical patent/GB2093064B/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/0554—External layer
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

Ultra-fine wires of copper or a copper alloy of 98 to 99.9% by weight of copper and 0.1 to 2% by weight of beryllium, tin, zinc, silver, zirconium, chromium or iron, are utilised for the production of the external connectors or terminals for semiconductor components. The wires may have a diameter of 0.01 to 0.06mm.

Description

SPECIFICATION External connectors or terminals The present invention relates to external connectors or terminals for semiconductor components and made from ultra-fine wire.
It is already known to utilise ultra-fine wires of gold, aluminium or aluminium alloys, for example AlSi 1, AlCu4, as disclosed in German OS 29 29 623, and AlMg1,forthe manufacture of the external connectors or terminals of semiconductor components.
Ultra-fine wires comprising a core of copper or copper alloy (in particular CuSn6) and an aluminium or aluminium alloy sheath, are described in German patent application P 30 23 528.0.
Whereas ultra-fine wires of aluminium and aluminium alloys are favoured for the manufacture of connections welded ultrasonically in accordance with the wedge-wedge method, the core/sheath wires (ultra-fine copper-aluminium wires) may be bonded to the semiconductor components and to the connector elements by means of ultrasonic welding according to the wedge-wedge method as well as by thermosonic welding in accordance with the pinhead contact method.
The mechanical strength and the electrical conductivity of the joint between these sheathed core wires and the semiconductor components are satisfactory. Damage may arise however upon forming the joint between the wire and the connector element consisting of copper or a copper alloy, for example a system carrier, which can lead to separation of the wire under operating conditions.
The reliability of integrated semiconductor components depends to a large extent on the connecting wires and the strength of their joint with the semiconductor components and the connector elements. An interest consequently exists in improving the connecting wires and in the development of new ones, which is also rendered necessary by more economical utilisation of precious metals in semiconductor technology.
It is consequently an object of the invention to find an ultra-fine wire, e.g. having a diameter of 0.01 to 0.06 mm, for the manufacture of the external connections of semiconductor components, which forms a reliable joint with aluminium-coated silicon semiconductor components as well as with connector elements of copper or copper alloys.
This object is achieved according to the invention, which consists in an external connector or terminal for a semiconductor component, comprising an ultra-fine wire of copper or a copper alloy having a composition of 98 to 99.9% by weight of copper and 0.1 to 2% by weight of beryllium, tin, zinc, silver, zirconium, chromium or iron.
Wires of ultra-fine gauge produced from the alloys containing 99.4% by weight of copper and 0.6% by weight of tin, and 99.85% by weight of copper and 0.1 5% by weight of zirconium, proved to be particularly advantageous.
Copper alloys of this nature are known per se.
For example, alloys of copper with 1% by weight of tin and with 0.15% by weight of zirconium, respectively, are described in Dies' "Kupfer und Kupferlegierungen in derTechnik", 1967, page 572, and in the German AS 10 90 437, respectively.
The ultra-fine wires of copper and copper alloy are joined to the connector elements consisting of copper or copper alloys by ultrasonic welding according to the wedge-method. The joints (bonding points) between ultra-fine wire and copper and between ultra-fine wire and copper alloy are free of faults (fissures and the like). The tearing strength of the pairs Cu/Cu, CuSnO.6/Cu and CuZrO. 1 5/Cu exceeds that of the pairs Cu/AI and Cu/Cu-Al.
The connection of the semiconductor components -for example consisting of silicon coated with aluminium - is established by thermosonic welding according to the pinhead contact method, the burning-off of the end of the ultra-fine wire occurring whilst forming a bead within a protective gas atmosphere.
In the case of the ultra-fine wires utilised in accordance with the invention - and at a diameter of 25 micrometres - the diameter of the beads formed during burning-off is smaller than in the known ultra-fine wires (AlSil :55 micrometres; CuZrO. 1 5 :50 micrometres). As demonstrated by a comparison of electron microscope screen photographs of the joints, this difference in size is even more pronounced in the case of the welded-on beads.
With regard to the increasing miniaturisation of the conductor channels in semiconductor devices, the lesser diameter of the beads formed during burning-off proves to be another advantage of the ultra-fine copper and copper alloy wires.
During thermosonic welding according to the pinhead contact method, the nozzle aperture of the nozzle serving the purpose of wire guiding and of a sonotrode may be clogged by interwelding of the ultra-fine wires with the egress surface of the said nozzle. The ultra-fine copper and copper alloy wires hardly tend to fuse to the nozzle - by contrast to those consisting of aluminium, aluminium alloys or copper-aluminium, so that the risk of plugging the nozzle aperture is very small.
The ultra-fine copper and copper alloy wires are characterised moreover by a high electrical conductivity, a higher fatigue strength and high tensile strength as compared to the ultra-fine wires of aluminium, aluminium alloys or copperaluminium, which contributes not only to the high tearing strength but also to forming a stable wire loop.

Claims (4)

1. An external connector or terminal for a semiconductor component, comprising an ultrafine wire of copper or a copper alloy having a composition of 98 to 99.9% by weight of copper and 0.1 to 2% by weight of beryllium, tin, zinc, silver, zirconium, chromium or iron.
2. A connector or terminal as claimed in claim 1, having a composition of 99.4% by weight of copper and 0.6% by weight of tin.
3. A connector or terminal as claimed in claim 1, having a composition of 99.85% by weight of copper and 0.1 5% by weight of zirconium.
4. A connector or terminal as claimed in any of the preceding claims, having a diameter of 0.01 to 0.06 mm.
GB8135741A 1981-02-12 1981-11-26 External connectors or terminals Expired GB2093064B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813104960 DE3104960A1 (en) 1981-02-12 1981-02-12 "FINE WIRE"

Publications (2)

Publication Number Publication Date
GB2093064A true GB2093064A (en) 1982-08-25
GB2093064B GB2093064B (en) 1984-10-31

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GB8135741A Expired GB2093064B (en) 1981-02-12 1981-11-26 External connectors or terminals

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JP (1) JPS57149744A (en)
CH (1) CH652532A5 (en)
DE (1) DE3104960A1 (en)
FR (1) FR2499767A1 (en)
GB (1) GB2093064B (en)

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FR2563381A1 (en) * 1984-04-19 1985-10-25 Hitachi Ltd ELECTRICALLY CONNECTING THE PELLETS AND WIRING ELEMENTS OF A SEMICONDUCTOR DEVICE TO A COPPER WIRE
US5149917A (en) * 1990-05-10 1992-09-22 Sumitomo Electric Industries, Ltd. Wire conductor for harness
WO1997031129A1 (en) * 1996-02-20 1997-08-28 Berkenhoff Gmbh Electric contacts

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US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
GB2175009B (en) * 1985-03-27 1990-02-07 Mitsubishi Metal Corp Wire for bonding a semiconductor device and process for producing the same
JPH05184788A (en) * 1991-12-19 1993-07-27 Daiken Trade & Ind Co Ltd Drying storage
JPH0716797U (en) * 1993-08-27 1995-03-20 武盛 豊永 High temperature clothes dryer with dehumidifier
JP2501303B2 (en) * 1994-04-11 1996-05-29 株式会社東芝 Semiconductor device
JP2501305B2 (en) * 1994-06-06 1996-05-29 株式会社東芝 Semiconductor device
JP2501306B2 (en) * 1994-07-08 1996-05-29 株式会社東芝 Semiconductor device
JP3891346B2 (en) 2002-01-07 2007-03-14 千住金属工業株式会社 Fine copper ball and method for producing fine copper ball
TWI287282B (en) 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
KR101019811B1 (en) 2005-01-05 2011-03-04 신닛테츠 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
WO2017221434A1 (en) 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
DE102018122574B4 (en) * 2018-09-14 2020-11-26 Kme Special Products Gmbh Use of a copper alloy
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2563381A1 (en) * 1984-04-19 1985-10-25 Hitachi Ltd ELECTRICALLY CONNECTING THE PELLETS AND WIRING ELEMENTS OF A SEMICONDUCTOR DEVICE TO A COPPER WIRE
FR2563380A1 (en) * 1984-04-19 1985-10-25 Hitachi Ltd SEMICONDUCTOR DEVICE ELECTRICAL CONNECTION OF PELLETS AND WIRING ELEMENTS TO A COPPER WIRE
US5149917A (en) * 1990-05-10 1992-09-22 Sumitomo Electric Industries, Ltd. Wire conductor for harness
WO1997031129A1 (en) * 1996-02-20 1997-08-28 Berkenhoff Gmbh Electric contacts
US5981090A (en) * 1996-02-20 1999-11-09 Berkenhoff Gmbh Pins for electronic assemblies

Also Published As

Publication number Publication date
JPS57149744A (en) 1982-09-16
FR2499767B3 (en) 1984-01-06
DE3104960C2 (en) 1987-09-24
JPH0237095B2 (en) 1990-08-22
CH652532A5 (en) 1985-11-15
GB2093064B (en) 1984-10-31
FR2499767A1 (en) 1982-08-13
DE3104960A1 (en) 1982-08-26

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Effective date: 20011125