CH652532A5 - USE OF A FINEST WIRE FOR MAKING EXTERNAL TERMINALS OF SEMICONDUCTOR COMPONENTS. - Google Patents

USE OF A FINEST WIRE FOR MAKING EXTERNAL TERMINALS OF SEMICONDUCTOR COMPONENTS. Download PDF

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Publication number
CH652532A5
CH652532A5 CH79/82A CH7982A CH652532A5 CH 652532 A5 CH652532 A5 CH 652532A5 CH 79/82 A CH79/82 A CH 79/82A CH 7982 A CH7982 A CH 7982A CH 652532 A5 CH652532 A5 CH 652532A5
Authority
CH
Switzerland
Prior art keywords
copper
weight
wires
aluminum
connection
Prior art date
Application number
CH79/82A
Other languages
German (de)
Inventor
Fritz Dr Aldinger
Albrecht Dr Bischoff
Wolfgang Bonifer
Original Assignee
Heraeus Gmbh W C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Gmbh W C filed Critical Heraeus Gmbh W C
Publication of CH652532A5 publication Critical patent/CH652532A5/en

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    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
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  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Description

652 532 652 532

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Claims (3)

PATENTANSPRÜCHEPATENT CLAIMS 1. Verwendung eines einen Durchmesser von 0,01 bis 0,06 mm aufweisenden Feinstdrahtes aus Kupfer oder einer Kupferlegierung aus 98 bis 99,9 Gew.-% Kupfer und 0,1 bis 2 Gew.-% Beryllium, Zinn, Zink, Silber, Zirkonium, Chrom oder Eisen für die Herstellung der Aussenanschlüsse von Halbleiter-Bauelementen.1. Use of a fine wire made of copper or a copper alloy of 98 to 99.9% by weight copper and 0.1 to 2% by weight beryllium, tin, zinc, silver with a diameter of 0.01 to 0.06 mm , zirconium, chromium or iron for the production of the external connections of semiconductor components. 2. Verwendung nach Anspruch 1 eines Feinstdrahtes aus 99,4 Gew.-% Kupfer und 0,6 Gew.-% Zinn für den in Anspruch 1 genannten Zweck.2. Use according to claim 1 of an extremely fine wire made of 99.4% by weight copper and 0.6% by weight tin for the purpose mentioned in claim 1. 3. Verwendung nach Anspruch 1 eines Feinstdrahtes aus 99,85 Gew.-% Kupfer und 0,15 Gew.-% Zirkonium für den in Anspruch 1 genannten Zweck.3. Use according to claim 1 of an extremely fine wire made of 99.85% by weight copper and 0.15% by weight zirconium for the purpose mentioned in claim 1. Die Erfindung betrifft die Verwendung eines einen Durchmesser von 0,01 bis 0,06 mm aufweisenden Feinstdrahtes für die Herstellung der Aussenanschlüsse von Halbleiter-Bauelementen.The invention relates to the use of an extremely fine wire with a diameter of 0.01 to 0.06 mm for the production of the external connections of semiconductor components. Es ist bekannt, Feinstdrähte aus Gold, Aluminium oder Aluminiumlegierungen, zum Beispiel AlSil, AlCu4 (deutsche Offenlegungsschrift 29 29 623) und AlMgl, für die Herstellung der Aussenanschlüsse von Halbleiter-Bauelementen zu verwenden.It is known to use extremely fine wires made of gold, aluminum or aluminum alloys, for example AlSil, AlCu4 (German Offenlegungsschrift 29 29 623) and AlMgl, for the production of the external connections of semiconductor components. Feinstdrähte aus einem Kupfer- oder Kupferlegierungs-kern (besonders CuSn6) und einem Aluminium- oder Aluminiumlegierungsmantel werden in der deutschen Patentanmeldung P 30 23 528.0 beschrieben.Extremely fine wires made from a copper or copper alloy core (especially CuSn6) and an aluminum or aluminum alloy sheath are described in German Patent Application P 30 23 528.0. Während Feinstdrähte aus Aluminium- und Aluminiumlegierungen bevorzugt für die Herstellung ultraschall-geschweisster Verbindungen nach dem Wedge-wedge-Verfah-ren eingesetzt werden, können die Kern/Mantel-Drähte (Kupfer-Aluminium-Feinstdrähte) sowohl durch Ultraschall-Schweissen nach dem Wedge-wedge-Verfahren als auch durch Thermosonic-Schweissen nach dem Verfahren der Nagelkopf-Kontaktierung mit den Halbleiter-Bauelementen und den Anschlusselementen verbunden werden.While ultra-fine wires made of aluminum and aluminum alloys are preferably used for the production of ultrasonically welded connections using the wedge-wedge method, the core/sheath wires (copper-aluminium ultra-fine wires) can be welded using ultrasonic welding using the wedge wedge method as well as by thermosonic welding using the method of nail head contacting with the semiconductor components and the connection elements. Die mechanische Festigkeit und die elektrische Leitfähigkeit der Verbindung zwischen diesen Kern/Mantel-Drähten und Halbleiter-Bauelementen ist gut. Bei der Ausbildung der Verbindung zwischen dem Draht und aus Kupfer oder einer Kupferlegierung bestehendem Anschlusselement, zum Beispiel einem Systemträger, können jedoch Schäden auftreten, die - unter Betriebsbedingungen - zu einem Ablösen des Drahtes führen.The mechanical strength and the electrical conductivity of the connection between these core/sheath wires and semiconductor devices are good. When forming the connection between the wire and a connection element made of copper or a copper alloy, for example a system carrier, damage can occur which—under operating conditions—lead to the wire becoming detached. Die Zuverlässigkeit von integrierten Halbleiter-Bauteilen hängt in hohem Masse von den Anschlussdrähten und der Festigkeit ihrer Verbindung mit den Halbleiter-Bauelementen und den Anschlusselementen ab. So besteht ein Interesse an der Verbesserung der Anschlussdrähte und an der Entwicklung neuer, die auch durch die sparsamere Verwendung von Edelmetallen in der Halbleiter-Technologie erforderlich wird.The reliability of integrated semiconductor devices depends to a large extent on the leads and the strength of their connection with the semiconductor devices and the connection elements. There is an interest in improving the connection wires and in developing new ones, which is also made necessary by the more economical use of precious metals in semiconductor technology. Es ist daher die Aufgabe der Erfindung, einen Feinstdraht mit einem Durchmesser von 0,01 bis 0,06 mm zur Herstellung der Aussenanschlüsse von Halbleiter-Bauelementen zu finden, der sowohl mit aluminium-beschichteten Silicium-Halb-leiter-Bauelementen als auch mit Anschl'usselementen ausIt is therefore the object of the invention to find an ultra-fine wire with a diameter of 0.01 to 0.06 mm for the production of the external connections of semiconductor components, which can be used with both aluminum-coated silicon semiconductor components and with terminals flow elements Kupfer oder Kupferlegierungen eine zuverlässige Verbindung bildet.copper or copper alloys forms a reliable connection. Die Aufgabe wird erfindungsgemäss durch die Verwendung eines Feinstdrahtes aus Kupfer oder einer Kupferlegierung aus 98 bis 99,9 Gew.-% Kupfer und 0,1 bis 2 Gew.-% Beryllium, Zinn, Zink, Silber, Zirkonium, Chrom oder- Eisen gelöst.The object is achieved according to the invention by using a fine wire made of copper or a copper alloy made of 98 to 99.9% by weight copper and 0.1 to 2% by weight beryllium, tin, zinc, silver, zirconium, chromium or iron . Besonders bewährt haben sich Feinstdrähte aus den Legierungen aus 99,4 Gew.-% Kupfer und 0,6 Gew.-% Zinn und aus 99,85 Gew.-% Kupfer und 0,15 Gew.-% Zirkonium.Extremely fine wires made from the alloys made from 99.4% by weight copper and 0.6% by weight tin and from 99.85% by weight copper and 0.15% by weight zirconium have proven particularly useful. Kupfer-Legierungen dieser Art sind an sich bekannt. Zum Beispiel werden Legierungen des Kupfers mit 1 Gew.-% Zinn beziehungsweise mit 0,15 Gew.-% Zirkonium in Dies, Kupfer und Kupferlegierungen in der Technik, 1967, Seite 572, beziehungsweise in der deutschen Auslegeschrift 10 90 437 beschrieben.Copper alloys of this type are known per se. For example, alloys of copper with 1% by weight of tin and 0.15% by weight of zirconium are described in Dies, Kupfer und Kupferverbindungen in der Technik, 1967, page 572, and in German Auslegeschrift 10 90 437, respectively. Die Kupfer- und Kupferlegierungsfeinstdrähte werden durch Ultraschall-Schweissen nach dem Wedge-Verfahren mit den aus Kupfer oder Kupferlegierungen bestehenden Anschlusselementen verbunden. Die Verbindungsstellen (Bondstellen) Feinstdraht/Kupfer und Feinstdraht/Kupferlegierung sind frei von Fehlstellen (Risse und dergleichen). Die Abreissfestigkeit der Paare Cu/Cu, CuSnO,6/Cii und CuZrO,15/Cu ist grösser als die der Paare Cu/AI und Cu/Cu-Al.The copper and copper alloy superfine wires are connected to the connection elements made of copper or copper alloys by ultrasonic welding using the wedge method. The connection points (bond points) ultra-fine wire/copper and ultra-fine wire/copper alloy are free of defects (cracks and the like). The pull-off strength of the Cu/Cu, CuSnO,6/Cii and CuZrO,15/Cu pairs is greater than that of the Cu/Al and Cu/Cu-Al pairs. Das Verbinden der Halbleiter-Bauelemente - zum Beispiel aus mit Aluminium beschichtetem Silicium - geschieht durch Thermosonic-Schweissen nach dem Verfahren der Nagelkopf-Kontaktierung, wobei das Abflammen des Feinstdrahtes unter Bildung einer Kugel in einer Schutzgas-Atmosphäre erfolgt.The connection of the semiconductor components - for example made of aluminum-coated silicon - is done by thermosonic welding using the nail-head contact method, with the ultra-fine wire being flamed to form a sphere in a protective gas atmosphere. Bei den erfindungsgemäss verwendeten Feinstdrähten ist - bei einem Durchmesser von 25 Mikrometer - der Durchmesser der sich beim Abflammen bildenden Kugejn kleiner als bei den bekannten Feinstdrähten (AlSil : 55 Mikrometer, CuZr0,15: 50 Mikrometer). Dieser Grössenunterschied ist, wie ein Vergleich von rasterelektronenmikroskopischen Aufnahmen der Verbindungsstellen zeigt, bei den aufgeschweiss-ten Kugeln noch ausgeprägter.With the ultra-fine wires used according to the invention--with a diameter of 25 micrometers--the diameter of the spheres formed during flaming is smaller than with the known ultra-fine wires (AlSil: 55 micrometers, CuZr0.15: 50 micrometers). As a comparison of scanning electron micrographs of the connection points shows, this difference in size is even more pronounced in the case of the welded-on balls. Im Hinblick auf die fortschreitende Miniaturisierung der Leiterbahnen in Halbleiter-Vorrichtungen erweist sich der geringere Durchmesser der sich beim Abflammen bildenden Kugeln als ein weiterer Vorteil der Kupfer- und Kupferlegierungsfeinstdrähte.In view of the ongoing miniaturization of circuit paths in semiconductor devices, the smaller diameter of the balls that form during flaming proves to be another advantage of copper and copper-alloy superfine wires. Während des Thermosonic-Schweissens nach dem Verfahren der Nagelkopf-Kontaktierung kann durch Verschweis-sen der Feinstdrähte mit der Austrittsfläche der zur Drahtführung und als Sonotrode dienenden Düse die Düsenöffnung verstopft werden. Die Kupfer-und Kupferlegierungsfeinstdrähte neigen - im Gegensatz zu solchen aus Aluminium-, Aluminiumlegierungen oder Kupfer-Aluminium - kaum zum Verschweissen mit der Düse, so dass die Gefahr des Verstop-fens der Düsenöffnung sehr gering ist.During thermosonic welding using the nail head contact method, the nozzle opening can become clogged by welding the fine wires to the exit surface of the nozzle used for wire guidance and as a sonotrode. In contrast to those made of aluminium, aluminum alloys or copper-aluminum, the copper and copper alloy superfine wires hardly tend to weld to the nozzle, so that the risk of the nozzle opening becoming clogged is very low. Weiter zeichnen sich die Kupfer- und Kupferlegierungsfeinstdrähte durch eine hohe elektrische Leitfähigkeit, eine im Vergleich zu den Feinstdrähten aus Aluminium, Aluminiumlegierungen oder Kupfer-Aluminium höhere Ermüdungsfestigkeit und eine hohe Zugfestigkeit aus, die nicht nur zu der hohen Abreissfestigkeit, sondern auch zur Ausbildung einer stabilen Drahtschleife (Loop) beiträgt.Furthermore, the copper and copper alloy fine wires are characterized by high electrical conductivity, a higher fatigue strength compared to the fine wires made of aluminum, aluminum alloys or copper-aluminium and a high tensile strength, which not only leads to the high tear strength, but also to the formation of a stable Wire loop (loop) contributes. 55 1010 1515 2020 2525 3030 3535 4040 4545 5050 5555 6060
CH79/82A 1981-02-12 1982-01-07 USE OF A FINEST WIRE FOR MAKING EXTERNAL TERMINALS OF SEMICONDUCTOR COMPONENTS. CH652532A5 (en)

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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223149A (en) * 1984-04-19 1985-11-07 Hitachi Ltd Semiconductor device
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
GB2175009B (en) * 1985-03-27 1990-02-07 Mitsubishi Metal Corp Wire for bonding a semiconductor device and process for producing the same
US5149917A (en) * 1990-05-10 1992-09-22 Sumitomo Electric Industries, Ltd. Wire conductor for harness
JPH05184788A (en) * 1991-12-19 1993-07-27 Daiken Trade & Ind Co Ltd Drying storage
JPH0716797U (en) * 1993-08-27 1995-03-20 武盛 豊永 High temperature clothes dryer with dehumidifier
JP2501303B2 (en) * 1994-04-11 1996-05-29 株式会社東芝 Semiconductor device
JP2501305B2 (en) * 1994-06-06 1996-05-29 株式会社東芝 Semiconductor device
JP2501306B2 (en) * 1994-07-08 1996-05-29 株式会社東芝 Semiconductor device
DE19606116A1 (en) * 1996-02-20 1997-08-21 Berkenhoff Gmbh Electrical contact elements
JP3891346B2 (en) 2002-01-07 2007-03-14 千住金属工業株式会社 Fine copper ball and method for producing fine copper ball
TWI287282B (en) 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
KR101019811B1 (en) 2005-01-05 2011-03-04 신닛테츠 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
WO2017221434A1 (en) 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
DE102018122574B4 (en) * 2018-09-14 2020-11-26 Kme Special Products Gmbh Use of a copper alloy
DE102019113082A1 (en) * 2019-05-17 2020-11-19 Infineon Technologies Ag SEMICONDUCTOR HOUSING AND METHOD OF FORMING A SEMICONDUCTOR HOUSING

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090437B (en) * 1956-08-14 1960-10-06 Nippert Electric Products Comp Process for improving the electrical and mechanical properties of copper-zirconium alloys
NL113327C (en) * 1956-10-31 1900-01-01
DE2929623C2 (en) * 1979-07-21 1981-11-26 W.C. Heraeus Gmbh, 6450 Hanau Fine wire made from an aluminum alloy
JPS5678357U (en) * 1979-11-09 1981-06-25
DE3011661C2 (en) * 1980-03-26 1982-08-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Semiconductor arrangement with bonding wires
DE3023528C2 (en) 1980-06-24 1984-11-29 W.C. Heraeus Gmbh, 6450 Hanau Fine wire containing aluminum

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FR2499767B3 (en) 1984-01-06
DE3104960C2 (en) 1987-09-24
JPH0237095B2 (en) 1990-08-22
GB2093064A (en) 1982-08-25
GB2093064B (en) 1984-10-31
FR2499767A1 (en) 1982-08-13
DE3104960A1 (en) 1982-08-26

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