GB2093064B - External connectors or terminals - Google Patents

External connectors or terminals

Info

Publication number
GB2093064B
GB2093064B GB8135741A GB8135741A GB2093064B GB 2093064 B GB2093064 B GB 2093064B GB 8135741 A GB8135741 A GB 8135741A GB 8135741 A GB8135741 A GB 8135741A GB 2093064 B GB2093064 B GB 2093064B
Authority
GB
United Kingdom
Prior art keywords
terminals
external connectors
copper
weight
wires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8135741A
Other versions
GB2093064A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Publication of GB2093064A publication Critical patent/GB2093064A/en
Application granted granted Critical
Publication of GB2093064B publication Critical patent/GB2093064B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
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    • H01L2224/05624Aluminium [Al] as principal constituent
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

Ultra-fine wires of copper or a copper alloy of 98 to 99.9% by weight of copper and 0.1 to 2% by weight of beryllium, tin, zinc, silver, zirconium, chromium or iron, are utilised for the production of the external connectors or terminals for semiconductor components. The wires may have a diameter of 0.01 to 0.06mm.
GB8135741A 1981-02-12 1981-11-26 External connectors or terminals Expired GB2093064B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813104960 DE3104960A1 (en) 1981-02-12 1981-02-12 "FINE WIRE"

Publications (2)

Publication Number Publication Date
GB2093064A GB2093064A (en) 1982-08-25
GB2093064B true GB2093064B (en) 1984-10-31

Family

ID=6124622

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8135741A Expired GB2093064B (en) 1981-02-12 1981-11-26 External connectors or terminals

Country Status (5)

Country Link
JP (1) JPS57149744A (en)
CH (1) CH652532A5 (en)
DE (1) DE3104960A1 (en)
FR (1) FR2499767A1 (en)
GB (1) GB2093064B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223149A (en) * 1984-04-19 1985-11-07 Hitachi Ltd Semiconductor device
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
GB2175009B (en) * 1985-03-27 1990-02-07 Mitsubishi Metal Corp Wire for bonding a semiconductor device and process for producing the same
US5149917A (en) * 1990-05-10 1992-09-22 Sumitomo Electric Industries, Ltd. Wire conductor for harness
JPH05184788A (en) * 1991-12-19 1993-07-27 Daiken Trade & Ind Co Ltd Drying storage
JPH0716797U (en) * 1993-08-27 1995-03-20 武盛 豊永 High temperature clothes dryer with dehumidifier
JP2501303B2 (en) * 1994-04-11 1996-05-29 株式会社東芝 Semiconductor device
JP2501305B2 (en) * 1994-06-06 1996-05-29 株式会社東芝 Semiconductor device
JP2501306B2 (en) * 1994-07-08 1996-05-29 株式会社東芝 Semiconductor device
DE19606116A1 (en) * 1996-02-20 1997-08-21 Berkenhoff Gmbh Electrical contact elements
JP3891346B2 (en) * 2002-01-07 2007-03-14 千住金属工業株式会社 Fine copper ball and method for producing fine copper ball
TWI287282B (en) 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
KR101019811B1 (en) 2005-01-05 2011-03-04 신닛테츠 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
WO2017221434A1 (en) 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
DE102018122574B4 (en) * 2018-09-14 2020-11-26 Kme Special Products Gmbh Use of a copper alloy
DE102019113082A1 (en) 2019-05-17 2020-11-19 Infineon Technologies Ag SEMICONDUCTOR HOUSING AND METHOD OF FORMING A SEMICONDUCTOR HOUSING

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090437B (en) * 1956-08-14 1960-10-06 Nippert Electric Products Comp Process for improving the electrical and mechanical properties of copper-zirconium alloys
NL113327C (en) * 1956-10-31 1900-01-01
DE2929623C2 (en) * 1979-07-21 1981-11-26 W.C. Heraeus Gmbh, 6450 Hanau Fine wire made from an aluminum alloy
JPS5678357U (en) * 1979-11-09 1981-06-25
DE3011661C2 (en) * 1980-03-26 1982-08-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Semiconductor arrangement with bonding wires
DE3023528C2 (en) 1980-06-24 1984-11-29 W.C. Heraeus Gmbh, 6450 Hanau Fine wire containing aluminum

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FR2499767A1 (en) 1982-08-13
JPH0237095B2 (en) 1990-08-22
JPS57149744A (en) 1982-09-16
GB2093064A (en) 1982-08-25
FR2499767B3 (en) 1984-01-06
CH652532A5 (en) 1985-11-15
DE3104960C2 (en) 1987-09-24
DE3104960A1 (en) 1982-08-26

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