CN103928418A - 键合引线和用于产生键合连接的方法 - Google Patents
键合引线和用于产生键合连接的方法 Download PDFInfo
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- CN103928418A CN103928418A CN201410012444.7A CN201410012444A CN103928418A CN 103928418 A CN103928418 A CN 103928418A CN 201410012444 A CN201410012444 A CN 201410012444A CN 103928418 A CN103928418 A CN 103928418A
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- bonding wire
- monofilament
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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Abstract
本发明涉及一种键合引线(1)包括由第一材料制成的一根或多根单丝(10-17),该一根或多根单丝嵌入到由第二材料制成的基体(20)中。该单丝(10-17)中的每一根在1013.25hPa的压力下具有第一熔融温度。该基体(20)在1013.25hPa的压力下具有第二熔融温度。该第一熔融温度比该第二熔融温度高出至少450℃。
Description
技术领域
本发明涉及键合引线连接。
背景技术
除其他之外,键合引线应用于功率电子模块和其他电组件之中。在此,它们部分地经受非常高的电流。于是例如在相应的接通的某些状态下可能造成键合引线的很高的冲击电流负载,由此可能使得键合引线被爆炸性地损毁。在极端情况下,例如当键合引线被密封式封闭地安置在该组件的壳体中时,这可能导致压力波,由于该压力波而使得该组件碎裂。此外,可能出现电弧,由于该电弧而使得诸如硅铸造块的一个铸造块嵌入到键合引线之中、使其蒸发和/或被从该壳体中抛射出来。此时出现的等离子体在不利的情况下还可能导致在该组件之内和/或之外的电短路。
发明内容
本发明的任务在于提供一种可能性,由此能够避免电组件的此类意外事故的危险或者至少降低其影响。另一个任务在于提供一种用于生产具有对应地改进的特性的组件的方法。这些任务通过一种根据本专利的键合引线或者通过一种根据本专利的用于生产电组件的方法而得以解决。本发明的设计和改进方案是各从属权利要求的主题。
一条键合引线包括由一种第一材料制成的一个或多根单丝,该一个或多根单丝嵌入到由一种第二材料制成的基体中。在此意义上,“单丝”应当理解为是一个连续的区段,它是由该第一材料组成的并且在该键合引线的走向方向上在其总长度上延伸。这些单丝中的每一个在1013.25hPa的压力下都具有第一熔融温度。该基体对应地在1013.25hPa的压力下具有第二熔融温度。该第一熔融温度比该第二熔融温度高出450℃以上。
通过这些差别很大的熔融温度,实现了在键合引线的电过载的情况下,该基体首先熔化然后开始蒸发,而该一个或多个单丝不熔化或者相对于基体的熔化而言受阻滞地熔化。通过这种措施,实现了使由于键合引线的熔化和蒸发而出现的压力累积的梯度并且在使用常规键合引线的情况下相比更小。该第一材料和/或该第二材料尤其能够是金属,以及仅仅由金属组成或包含至少一种金属的合金。可选地,在该基体中还能够嵌入非金属填充剂,例如由硅、碳、或者陶瓷(例如碳化硅、氮化铝、氧化铝)、或者所述材料的任意混合物制成的填充剂,以改进键合引线的可拉伸性。同样可选地,该填充剂能够具有比该基体更小的线性热膨胀系数,以总体上降低键合引线的热膨胀系数,例如针对一个物体(例如像半导体芯片)的膨胀系数实现明确的匹配,该物体应当与键合引线相键合并且具有比该基体更小的线性热膨胀系数。
在用于生产电组件的方法方面,将具有上面说明的构造的键合引线键合到载体的金属化部分处,使得键合引线直接接触该金属化部分。
附图说明
以下将参考附图借助于实施例来说明本发明。附图的图示不是按比例的。其中:
图1A示出了确切地具有一条单丝的键合引线的区段的立体图。
图1B示出了穿过根据图1A的键合引线的纵剖面。
图1C示出了在一个截面平面E1中穿过根据图1A和1B的键合引线的横截面。
图2示出了穿过一个键合引线的横截面,该键合引线确切地具有一个偏心地安置在该键合引线中的单丝。
图3A示出了穿过一个具有多个彼此间隔开的单丝的键合引线的横截面。
图3B示出了在一个截面平面E3中穿过根据图3A的键合引线的纵截面。
图4示出了穿过具有非圆形横截面的键合引线的横截面。
图5示出了穿过具有一根单丝的键合引线的横截面,该单丝具有不规则的横截面。
图6示出了穿过具有一根单丝的矩形键合引线的横截面,该单丝同样具有矩形的横截面。
图7示出了穿过一个键合在金属化部分处的键合引线的横截面。
图8示出了在多种金属之间的温度差的一张表,这些金属的熔融温度相差至少450℃。
具体实施方式
图1A示出一个键合引线1的区段的立体图。键合引线1确切地具有一根单丝10,该单丝由一种第一材料制成并嵌入到由一种第二材料制成的基体20中。为了简化图示,该区段展示为直的引线区段,其纵向在方向z上延伸。方向x和y彼此垂直并且垂直于键合引线1走向方向地延伸,该键合引线的走向方向在所示的例子中通过方向z给出。
在所示的例子中,键合引线区段的纵向是与其走向方向相同的。然而,理论上键合引线1也可以是弯曲的。在这种情况下,沿键合引线1的走向方向可能并不总是有如下结果:分别垂直于引线的走向方向而延伸的不同的横截面平面E1一般而言并不彼此平行。对于弯曲的键合引线1的情况,在沿键合引线1可变的键合引线1走向方向上,该z方向相应地以随位置而变的方式延伸。
单丝10在1013.25hPa的压力下具有第一熔融温度。相应地,该基体20在1013.25hPa的压力下具有第二熔融温度。该第一熔融温度比该第二熔融温度高出至少450℃。适合作为用于单丝10的第一材料的是例如钨(熔融温度3390℃)或钼(熔融温度2620℃)或钯(熔融温度1550℃),或者例如至少90%原子地由这些材料中的一种或多种组成的合金。良好地适合作为用于基体20的第二材料例如是铝,或者至少90%原子由铝组成的合金,因为铝由于其较高的延展性是明显适合用于引线键合的。
图1B示出了在一个由方向z和y定义的截面平面E2(见图1C)穿过键合引线1的纵截面;图1C示出了在截面平面E1(见图1A和1B)中的横截面,该截面平面垂直于键合引线1的走向方向延伸并且由方向x和y来限定。
在根据图1A、1B和1C的视图中可以看出,单丝10在基体20或在键合引线1的中间,也就是单丝10的走向方向是与键合引线1的走向方向相同的。如示例性示出的,相应地在一个与引线1的走向方向z垂直的截面平面E1中,键合引线1总体上和/或一根单丝20可以具有一个圆形的横截面。在所示的例子中,键合引线1具有直径D1,单丝10具有直径D10。键合引线1和/或单丝10尤其可以沿键合引线1的走向方向在基本上所有位置上具有圆形的横截面。
如在图1C中示出的,单丝10在截面平面E1中具有横截面积A10,并且基体20具有横截面积A20。由此,键合引线1在截面平面E1中的总横截面积A1通过A10与A20之和给出。
图2示出了在一个与另一个键合引线1的纵向z垂直的截面平面中穿过该键合引线的横截面。这个键合引线1与根据图1A、1B和1C的键合引线1的不同之处仅在于,单丝10偏心地安排在基体20中。单丝10的走向方向在此也是与键合引线1的走向方向相同的。
如在图3A中还示例性示出的,键合引线1还可以具有两个或更多根单丝10,这些单丝由该第一材料组成并且在一个与键合引线1的纵向z垂直的截面平面中相应地完全嵌入基体20中。在所示的例子中,键合引线具有七根单丝11、12、13、14、15、16、17,分别由第一材料组成并具有横截面积A11、A12、A13、A14、A15、A16、A17。然而,一般而言,键合引线1可以具有由该第一材料制成的、确切地为一根单丝或者至少两根单丝,这些单丝相应地在该键合引线1的总长度上延伸并且其走向方向相应地与键合引线1的走向方向相同。与由该第一材料制成的单丝11、12、13、14、15、16、17的数目无关地,在一个与键合引线1的走向方向垂直的截面平面中由该第一材料组成的所有单丝11、12、13、14、15、16、17组成的总横截面积A20等于这些单丝11、12、13、14、15、16、17在这个截面平面中的单独的横截面积A11、A12、A13、A14、A15、A16、A17的总和。
如在所属的根据图3B在一个截面平面E3(见图3A,该截面平面垂直于根据图3A的纸面走向)中的截面图中在单丝13、16和17的例子处可以看出的,键合引线1的所有由该第一材料组成的单丝能够分别地具有与键合引线1相同的走向方向。在图3B中展示的截面平面E4对应于根据图3A的纸面。
如在图3A中所示,键合引线1的分别由该第一材料组成的所有的单丝11、12、13、14、15、16、17能够在一个与键合引线1的走向方向垂直的截面平面中具有一个圆形的横截面。
然而,与此不同地,由第一材料制成的单丝11、12、13、14、15、16、17并不必须具有圆形的横截面,这示例性地借助于图4至图6加以示出。在根据图4的例子中,单丝11、12、13、14、15、16、17和键合引线1都不具有圆形的横截面。在根据图5的例子中,仅键合引线1的横截面总体上是圆形的,然而唯一的单丝10的横截面不是圆形的。在根据图6的例子中,键合引线1以及唯一的单丝10都具有基本上矩形的横截面。
图7示出了穿过一个键合位置的横截面,在该位置处一个根据图1A至1C形成的键合引线1键合在一个载体50的金属化部分51处。键合引线1和键合位置安排在仅示意性展示的壳体6中,该壳体可选地能够形成为密封式封闭的。同样可选的是,键合引线1能够嵌入一种铸造块、例如硅凝胶中。
载体50可以是例如半导体芯片5的半导体本体,或者是开关载体5的电绝缘陶瓷。然而理论上,金属化部分51能够是任意可电连接部件的一个金属化部分。
键合引线1与金属化部分51之间的电连接按已知方式通过楔形引线键合来建立。然而理论上也能够应用其他的引线键合技术。无论如何,原始的键合引线1的几何形状,如在本例中在图1A至1C中所示,通过该键合过程而改变。如在图7中可以看出的,键合引线1通过键合过程在键合位置处被挤压成扁平的。在此背景下要注意的是,在本发明的意义上,所给出的横截面积A1、A10和A20涉及键合引线1的并不与键合位置直接相邻的位置,也就是说在键合引线1的仍然拥有其原始形状的位置。另外,由于键合过程,键合引线1的走向方向不再是直的,而是键合引线1现在拥有如下形成的圈(‘环(loop)’)的形状:使键合引线1仅在该键合位置(或者在适当时这些键合位置)处接触金属化部分51,然而其他情况下与金属化部分51间隔开。
在所示的例子中,单丝10也通过键合过程而剧烈变形。首先在将非常硬的材料(例如像钨或钨合金)用于单丝10(或者,在其他实施方式中,用于多根单丝11、12、13、14、15、16、17)的情况下,这个或这些单丝的变形也可以表现得明显缓和。
然而,根据图7的装置不仅能够在使用根据图1A至1C形成的键合引线1的情况下实现,而且在使用拥有如上面说明的构造的任一种键合引线的情况下都能够实现。
如已经说明的那样,在根据本发明的键合引线1,键合引线1的由该第一材料组成的每一根单丝10、11、12、13、14、15、16、17在1013.25hPa的压力下具有的熔融温度比该基体20在1013.25hPa的压力下具有的熔融温度高至少450℃。
此外,所涉及的材料还能够可选地被选择为使得键合引线1的由该第一材料组成的一个、多个或所有单丝10、11、12、13、14、15、16、17在1013.25hPa的压力下具有的熔融温度比该基体20在1013.25hPa的压力下具有的熔融温度高至少850℃。
此外,所涉及的材料还能够被选择为使得键合引线1的由该第一材料组成的每一根单丝10、11、12、13、14、15、16、17在1013.25hPa的压力下具有至少1200℃的熔融温度。如此的高熔融温度带来了以下优点:只有在高的功耗下才出现这个或这些单丝10、11、12、13、14、15、16、17的熔化。在此,功耗能够如此高,从而使得不仅该第一材料而且该第二材料都蒸发。重要的区别在于,该第二材料早于该第一材料开始蒸发。
与此无关地,能够选择基体20的第二材料,使其具有至少550℃的熔融温度。由此能够防止基体20已经在常规半导体组件的工作温度下熔化。
在本发明的键合引线1中,键合引线1的由该第一材料组成的一个、多于一个或所有单丝10、11、12、13、14、15、16、17还可以具有在20℃的温度和1013.25hPa的压力下最高10-7Ω·m(1E-7Ω·m)的电阻率。其优点是,将在工作时在键合引线1中出现的功耗以及因此将键合引线1的发热保持得较低。
与此无关地,在本发明的键合引线1中,键合引线1的由该第一材料组成的一个、多于一个或所有单丝10、11、12、13、14、15、16、17还可以具有在20℃的温度和1013.25hPa的压力下大于4.5x10-8Ω·m(4.5E-8Ω·m)的电阻率。
此外,基体20能够任选地在20℃的温度和1013.25hPa的压力下具有小于10-7Ω·m(1E-7Ω·m)的电阻率,由此能够实现键合引线1的低电阻。
在根据本发明的键合引线1中,此外还可以提出,其表面(从键合引线1的末端来看)是由基体20形成的,也就是说,除其他之外,键合引线1的由该第一材料组成的所有单丝10、11、12、13、14、15、16、17是与键合引线1的表面间隔开的。换言之,键合引线1的由该第一材料组成的每一根单丝10、11、12、13、14、15、16、17,从其末端看,是完全嵌入在基体20中的。
据此,键合引线1的由该第一材料组成的一个、多于一个或所有单丝10、11、12、13、14、15、16、17可以与键合引线1的表面间隔开键合引线1的直径D1的至少10%。在不具有圆形横截面的键合引线1的情况下,该键合引线所具有的垂直于其走向方向的最大直径被看做是其直径D1。在图1C、2、4、5和6中,这个距离用d0来标注。
借助于根据本发明的键合引线1,首先能够在键合引线1被施加高的电流负载的功率电子器件的领域实现改进。因此能够提出,键合引线1具有至少70000μm2的垂直于其走向方向的横截面积A1,这在具有圆形横截面的键合引线1的情况下对应于大约至少300μm的直径。
与此无关地,在根据本发明的键合引线1中,在一个横向于键合引线1的走向方向延伸的截面平面中,在键合引线1的由该第一材料组成的所有单丝10、11、12、13、14、15、16、17的横截面积给出的第一横截面积A10与键合引线1的横截面积A1(=A10+A20)之间A10÷A1的比率大于0.04。
与此无关地,该比率A10÷A1也能够被选择为使其小于0.75。由此确保了存在基体20的第二材料的充分量值。
通常来说,在根据本发明的键合引线中,键合引线1的由该第一材料组成的一个、多个或每一根单丝10、11、12、13、14、15、16、17能够分别地完全或至少95%原子地由金属组成,该金属例如银、金、铜、铍、镍、铁、钯、铂、铬、铑、铱、钌、钼、钽、钨、或至少90%原子地由确切地一种或者多种所述金属组成的合金。
替代地或附加地,基体20的该第二材料能够完全或至少95%原子由金属组成,该金属例如锌、镁、铝、银、金、铜、铍、镍、铁、钯、铂、铬、铑、铱、钌、钼、钽、或至少90%原子由这些金属之一组成的合金。
图8示出了一个(非排他性的)表,表中有金属以及相对于1013.25hPa的压力所属的以摄氏度计的熔融温度ST,这些金属能够以纯金属的形式或者以合金形式来用于生产单丝(“单丝金属”)和基体(“基体金属”)。表项对于单丝金属与基体金属的每种组合给出了在单丝金属的熔融温度ST单丝金属与基体金属的熔融温度ST基体金属以摄氏度计的差值,只要这个差值为至少450℃。在表中记录的熔融温度是取自D′Ans,Lax:“化学工作者和物理工作者的便携手册(Taschenbuch für Chemiker und Physiker)”,第三版,第一卷,“宏观物理-化学特性”,斯普林格出版社,柏林,海德堡,纽约,1967,参加其中条目23的表2141“在正常状况下凝固的元素的物理和化学特性(Physikalische und chemische Eigenschaften der Elemente,die imNormalzustand kondensiert sind)”。
Claims (17)
1.一种键合引线,其包括:
一根单丝(10)或者多根单丝(11-17);
基体(20),所述一根单丝(10)嵌入到所述基体中或者所述多根单丝(11-17)嵌入到所述基体中;其中
所述单丝中的每一根在1013.25hPa的压力下具有的熔融温度比所述基体(20)在1013.25hPa的压力下具有的熔融温度高至少450℃。
2.根据权利要求1所述的键合引线,其特征在于,该键合引线(1)的一根、多于一根、或所有的单丝(10)具有至少1200℃的熔融温度。
3.根据权利要求1或2所述的键合引线,其特征在于,所述基体(20)具有至少550℃的熔融温度。
4.根据以上权利要求中任一项所述的键合引线,其特征在于,所述键合引线(1)的一根、多于一根、或所有的单丝(10-17)在20℃的温度和1013.25hPa的压力下具有最高10-7Ω·m(1E-7Ω·m)的电阻率。
5.根据以上权利要求中任一项所述的键合引线,其特征在于,所述键合引线(1)的一根、多于一根、或所有的单丝(10-17)在20℃的温度和1013.25hPa的压力下具有大于4.5x10-8Ω·m(4.5E-8Ω·m)的电阻率。
6.根据以上权利要求中任一项所述的键合引线,其特征在于,所述键合引线(1)的一根、多于一根、或所有的单丝(10)在1013.25hPa的压力下具有的熔融温度比所述基体(20)在1013.25hPa的压力下具有的熔融温度高至少850℃。
7.根据以上权利要求中任一项所述的键合引线,其特征在于,所述基体(20)在20℃的温度和1013.25hPa的压力下具有小于10-7Ω·m(1E-7Ω·m)的电阻率。
8.根据以上权利要求中任一项所述的键合引线,其特征在于,其表面是由所述基体(20)形成的。
9.根据以上权利要求中任一项所述的键合引线,其特征在于,所述键合引线横向于其走向方向(z)具有至少70000μm2的横截面积(A1)。
10.根据以上权利要求中任一项所述的键合引线,其特征在于,所述键合引线(1)的一根单丝、多于一根、或所有的单丝(10)是离所述键合引线(1)的表面间隔开至少所述键合引线(1)的直径(D1)的10%。
11.根据以上权利要求中任一项所述的键合引线,其特征在于,在一个横向于所述键合引线(1)的走向方向(z)延伸的截面平面中,在由所述键合引线(1)的所述一根单丝(10)的横截面积或由所述键合引线的所有单丝(11-17)的横截面积(A11-A17)所给出的第一横截面积(A10)与所述键合引线的横截面积(A1=A10+A20)之间的比率(A10÷A1)大于0.04。
12.根据以上权利要求中任一项所述的键合引线,其特征在于,在一个横向于所述键合引线(1)的走向方向(z)延伸的截面平面中,在由所述键合引线(1)的所述一根单丝(10)的横截面积或由所述键合引线的所有单丝(11-17)的横截面积(A11-A17)所给出的第一横截面积(A10)与所述键合引线的横截面积(A1=A10+A20)之间的比率(A10÷A1)小于0.75。
13.根据以上权利要求中任一项所述的键合引线,其特征在于,
所述键合引线(1)的所述一根单丝(10)、多于一根、或所有单丝(11-17)分别完全地或至少95%原子地由金属组成;和/或
所述基体(20)完全地或至少95%原子地由金属组成。
14.根据以上权利要求中任一项所述的键合引线,其特征在于,所述键合引线(1)的所述一根单丝(10)、多于一根、或所有单丝(11-17)分别由以下材料之一组成或由一种合金组成,所述合金至少90%原子地由以下材料之一组成:银、金、铜、铍、镍、铁、钯、铂、铬、铑、铱、钌、钼、钽、钨。
15.根据以上权利要求中任一项所述的键合引线,其特征在于,所述基体(20)由以下材料之一组成或由一种合金组成,所述合金至少90%原子地由以下材料之一组成:锌、镁、铝、银、金、铜、铍、镍、铁、钯、铂、铬、铑、铱、钌、钼、钽。
16.一种用于制造电组件的方法,所述方法包括以下步骤:
提供具有金属化部分(51)的载体(5);
提供根据以上权利要求中任一项来构造的键合引线(1);
在所述金属化部分(51)与所述键合引线(1)之间产生引线键合连接,使得所述键合引线直接接触所述金属化部分(51)。
17.根据权利要求16所述的方法,其特征在于,所述引线键合连接的产生是通过楔形键合来进行的。
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