JP2009543378A - 半導体デバイス製造中の交互に行うスペーサ堆積を用いたピッチ縮小技術およびそれを含むシステム - Google Patents
半導体デバイス製造中の交互に行うスペーサ堆積を用いたピッチ縮小技術およびそれを含むシステム Download PDFInfo
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Abstract
Description
14はエッチングされ、結果として図4の構造となる。
層72は、半導体ウェハ、半導体ウェハまたはウェハ部分の上にある一以上の層を含む半導体ウェハ基板部材、もしくはパターンエッチングされうる一以上の他の層、であってよい。この実施形態では、フォトリソグラフィフィーチャ70は、リソグラフィ限界で形成され、各フィーチャ70の幅と、フィーチャ70の間の間隔14は全てほぼ同じである。層70はフォトレジストとは別のパターンされた材料を含んでもよい。
さは、1/6の厚さを目標とする。図16では、フォトレジスト70は5/6の幅162を有し、距離164もまた5/6に等しい。第一のスペーサ層160はスペーサエッチングされ、結果として図17に示されるように第一のスペーサ160’ となる。各スペーサ160’ の基礎となる幅は1/6のままであることを目標とする。スペーサ層160は第一のスペーサ層であり、 m=1 を表す。
ロセスは任意の実際値 m に関して変更されうる。したがって、縮小は元のパターンの1/3、1/5、1/7などとなりうる。あるプロセスはm=3で下記に示され、したがってピッチは元のマスクの1/5となる(すなわち、フィーチャ密度は5倍)。説明を容易にするために、再びフォトレジストの幅は任意の厚さ1を当初の目標とし、フォトレジスト間の距離を1とする。したがって、このフォトレジストフィーチャはピッチ2を有し、これは図7に示される。図23から27の実施形態と同様、この実施形態ではフォトレジストはトリミングされない。
トフィーチャ70の幅であり、m は形成されるスペーサ層の数であり、ここでは m≧2である。等式 1+X+2ma=-a は、CDの所定の縮小に対して要求されるスペーサ層の数を決定するために使用されうる。ここで、m≧2 であり、“a”は元のフォトレジスト層の幅によって分割されるスペーサ層の厚さである。この実施形態では、 X=0 であり、トリミングはない。
Claims (29)
- エッチング予定層を設けるステップと、
前記エッチング予定層の上に犠牲パターン層を形成するステップであって、
前記犠牲パターン層は、少なくとも第一と第二の断面のある側壁を有する複数の区切られた部分を含む、ステップと、
前記犠牲パターン層の各区切られた部分の各側壁に接して一つのスペーサが形成されるように、複数の犠牲第一スペーサを形成するステップと、
前記犠牲パターン層を除去するステップと、
コンフォーマル第二スペーサ層を、前記複数の犠牲第一スペーサの上に形成するステップと、
前記犠牲第一スペーサに接して複数の第二スペーサを形成するために、前記コンフォーマル第二スペーサ層の一部分を除去するステップと、
前記第二スペーサを形成するステップに続いて、前記犠牲第一スペーサを除去するステップと、
前記第二スペーサをパターンとして用いて、前記エッチング予定層をエッチングするステップと、
を含む、半導体デバイス製造中に使用する方法。 - 前記犠牲パターン層の各部分が第一の幅を含み、且つ、
前記第一の幅よりも約25% 狭い第二の幅を持つように前記各犠牲パターン層の前記第一の幅をトリミングするステップと、
前記複数の第一スペーサのそれぞれを、前記第一の幅の約25% の幅を持つように形成するステップと、
前記コンフォーマル第二スペーサ層をエッチングして、前記第二スペーサがそれぞれ前記第一の幅の約25% の幅を持つようにするステップと、
をさらに含む、請求項1の方法。 - 前記エッチング予定層からフィーチャを形成するように前記エッチング予定層をエッチングするステップをさらに含み、
前記エッチング予定層から形成された各フィーチャは前記第一の幅の約25% の幅を含む、
請求項2の方法。 - 前記第一の幅の約2倍の予めトリミングされたピッチを持つように、前記犠牲層の前記複数の区切られた部分を形成するステップと、
前記エッチング予定層を、前記犠牲層の前記区切られた部分の前記予めトリミングされたピッチの約25% のピッチを持つ前記フィーチャを形成するようにエッチングするステップと、
をさらに含む、請求項3の方法。 - 前記犠牲パターン層を形成して、前記複数の区切られた部分が第一の密度を有するようにする、ステップと、
前記第二スペーサを複数のフィーチャを形成するためのパターンとして用いて前記エッチング予定層をエッチングするステップであって、前記複数のフィーチャは前記第一の密度の約4倍の第二の密度を有する、ステップと、
をさらに含む、請求項1の方法。 - 前記犠牲パターン層の各部分が第一の幅を持ち、且つ、
前記複数の第一スペーサのそれぞれを前記第一の幅の約33% である幅を有するように形
成するステップと、
前記コンフォーマル第二スペーサ層をエッチングして、前記第二スペーサがそれぞれ前記第一の幅の約33% の幅を持つようにするステップと、
をさらに含む、請求項1の方法。 - 前記エッチング予定層からフィーチャを形成するように前記エッチング予定層をエッチングするステップをさらに含み、
前記エッチング予定層から形成された各フィーチャは前記第一の幅の約33% の幅を含む、
請求項6の方法。 - 前記第一の幅の約2倍の所定ピッチを持つように、前記犠牲層の前記複数の区切られた部分を形成するステップと、
前記エッチング予定層を、前記犠牲層の前記区切られた部分の前記所定ピッチの約33% のピッチを持つ前記フィーチャを形成するようにエッチングするステップと、
をさらに含む、請求項7の方法。 - 前記犠牲パターン層を形成して、前記複数の区切られた部分が第一の密度を有するようにする、ステップと、
前記第二スペーサを複数のフィーチャを形成するためのパターンとして用いて前記エッチング予定層をエッチングするステップであって、前記複数のフィーチャは前記第一の密度の約3倍の第二の密度を有する、ステップと、
をさらに含む、請求項1の方法。 - 前記犠牲パターン層を、フォトレジストから形成するステップをさらに含む、
請求項1の方法。 - 前記犠牲パターン層を、透明炭素、多層レジスト、および二層レジストからなる群から選択された材料から形成するステップをさらに含む、
請求項1の方法。 - エッチング予定層を設けるステップと、
前記エッチング予定層の上に犠牲パターン層を形成するステップであって、
前記犠牲パターン層は、それぞれがほぼ同じ開始幅を有する複数の区切られた部分、前記開始幅の約2倍の元のピッチ、第一と第二の断面のある側壁、および開始フィーチャ密度を含む、ステップと、
関係式 1/2m を用いる所望のフィーチャ縮小を選択するステップであって、“m”は2 以上の整数であり、完成したフィーチャ密度は前記開始フィーチャ密度の約2m倍であり、完成したフィーチャピッチは前記元のピッチの約1/2m 倍である、ステップと、
前記犠牲第一パターン層の各区切られた部分の前記幅を、前記開始幅の約1/2m 倍の量だけトリミングするステップと、
複数の第一スペーサを形成するステップであって、一つのスペーサが前記第一と第二の側壁のそれぞれに接して形成され、各スペーサは前記開始幅の約1/2m 倍に等しい目標幅を有する、ステップと、
前記犠牲パターン層を除去するステップと、
前記複数の第一スペーサの上にコンフォーマル第二スペーサ層を形成するステップと、
前記第一スペーサに接して複数の第二スペーサを形成するために、前記コンフォーマル第二スペーサ層の一部分を除去するステップと、
前記コンフォーマル第二スペーサ層の前記部分を除去するステップに続いて、
“m”が偶数である場合、前記第一スペーサを除去して前記第二スペーサを残して
おくステップと、あるいは、
“m”が奇数である場合、前記第二スペーサを除去して前記第一スペーサを残しておくステップと、
前記エッチング予定層を、残っているスペーサをパターンとして用いてエッチングするステップと、
を含む、半導体デバイス製造中に使用する方法。 - “m”が偶数となるように選択するステップと、
前記第一スペーサを除去して、前記第二スペーサを残すステップと、
前記エッチング予定層を、少なくとも前記第二スペーサをパターンとして用いてエッチングするステップと、
をさらに含む、請求項12の方法。 - 1/2m となる前記所望のフィーチャ縮小を選択するステップであって、“m”は2であるので前記完成したフィーチャ密度は前記開始フィーチャ密度の約4倍であり、前記完成したフィーチャピッチは前記元のピッチの約1/4倍である、ステップと、
前記第一スペーサを除去して、前記第二スペーサを残すステップと、
前記エッチング予定層を、前記第二スペーサのみをパターンとして用いてエッチングするステップと、
をさらに含む、請求項13の方法。 - 1/2m となる前記所望のフィーチャ縮小を選択するステップであって、“m”は4以上の偶数である、ステップと、
コンフォーマル第三スペーサ層を、前記第一スペーサと前記第二スペーサの上に形成するステップと、
前記コンフォーマル第三スペーサ層の一部分を、第三スペーサを形成するために除去するステップと、
コンフォーマル第四スペーサ層を、前記第一スペーサ、前記第二スペーサ、および前記第三スペーサの上に形成するステップと、
前記コンフォーマル第四スペーサ層の一部分を、第四スペーサを形成するために除去するステップと、
前記第三スペーサと前記第一スペーサを除去して、前記第二スペーサと前記第四スペーサを残すステップと、
前記エッチング予定層を、前記第二スペーサと前記第四スペーサをパターンとして用いてエッチングするステップと、
をさらに含む、請求項13の方法。 - 奇数となる前記所望のフィーチャ縮小を選択するステップと、
第三スペーサ層を前記第一スペーサと前記第二スペーサの上に形成するステップと、
前記第三スペーサ層の一部分を、第三スペーサを形成するために除去するステップと、
前記第二スペーサを除去して、前記第一スペーサと前記第三スペーサを残すステップと、
前記エッチング予定層を、少なくとも前記第一スペーサと前記第三スペーサをパターンとして用いてエッチングするステップと、
をさらに含む、請求項12の方法。 - 1/2m となる前記所望のフィーチャ縮小を選択するステップであって、“m”は3であるので前記完成したフィーチャ密度は前記開始フィーチャ密度の約6倍であり、前記完成したフィーチャピッチは前記元のピッチの約1/6倍である、ステップと、
前記エッチング予定層を、前記第一スペーサと前記第三スペーサのみをパターンとして
用いてエッチングするステップと、
をさらに含む、請求項15の方法。 - エッチング予定層を設けるステップと、
前記エッチング予定層の上に犠牲パターン層を形成するステップであって、
前記犠牲パターン層は、それぞれがほぼ同じ開始幅を有する複数の区切られた部分、前記開始幅の約2倍の元のピッチ、第一と第二の断面のある側壁、および開始フィーチャ密度を含む、ステップと、
関係式 1/(2m-1) を用いる所望のフィーチャ縮小を選択するステップであって、“m”は2 以上の整数であり、完成したフィーチャ密度は前記開始フィーチャ密度の約 (2m-1) 倍であり、完成したフィーチャピッチは前記元のピッチの約1/(2m-1) 倍である、ステップと、
複数の第一のスペーサを形成するステップであって、一つの第一スペーサが前記第一と第二の側壁のそれぞれに接して形成され、各第一スペーサは前記開始幅の約1/(2m-1) 倍に等しい目標幅を有する、ステップと、
前記犠牲パターン層を除去するステップと、
前記複数の第一スペーサの上にコンフォーマル第二スペーサ層を形成するステップと、
前記第一スペーサに接して複数の第二スペーサを形成するために、前記コンフォーマル第二スペーサ層の一部分を除去するステップと、
前記複数の第二スペーサを前記第一スペーサに接して形成するステップに続いて、
“m”が偶数である場合、前記第一スペーサを除去して前記第二スペーサを残しておくステップと、あるいは、
“m”が奇数である場合、前記第二スペーサを除去して前記第一スペーサを残しておくステップと、
前記エッチング予定層を、残っているスペーサをパターンとして用いてエッチングするステップと、
を含む、半導体デバイス製造中に使用する方法。 - “m”が偶数となるように選択するステップと、
前記第一スペーサを除去して、前記第二スペーサを残すステップと、
前記エッチング予定層を、少なくとも前記第二スペーサをパターンとして用いてエッチングするステップと、
をさらに含む、請求項18の方法。 - 1/(2m-1) となる前記所望のフィーチャ縮小を選択するステップであって、“m”は2であるので前記完成したフィーチャ密度は前記開始フィーチャ密度の約3倍であり、前記完成したフィーチャピッチは前記元のピッチの約1/3倍である、ステップと、
前記第一スペーサを除去して、前記第二スペーサを残すステップと、
前記エッチング予定層を、前記第二スペーサのみをパターンとして用いてエッチングするステップと、
をさらに含む、請求項19の方法。 - 1/(2m-1) となる前記所望のフィーチャ縮小を選択するステップであって、“m”は4以上の偶数である、ステップと、
コンフォーマル第三スペーサ層を、前記第一スペーサと前記第二スペーサの上に形成するステップと、
前記コンフォーマル第三スペーサ層の一部分を、第三スペーサを形成するために除去するステップと、
コンフォーマル第四スペーサ層を、前記第一スペーサ、前記第二スペーサ、および前記第三スペーサの上に形成するステップと、
前記コンフォーマル第四スペーサ層の一部分を、第四スペーサを形成するために除去するステップと、
前記第三スペーサと前記第一スペーサを除去して、前記第二スペーサと前記第四スペーサを残すステップと、
前記エッチング予定層を、前記第二スペーサと前記第四スペーサをパターンとして用いてエッチングするステップと、
をさらに含む、請求項19の方法。 - 奇数となる前記所望のフィーチャ縮小を選択するステップと、
第三スペーサ層を前記第一スペーサと前記第二スペーサの上に形成するステップと、
前記第三スペーサ層の一部分を、第三スペーサを形成するために除去するステップと、
前記第二スペーサを除去して、前記第一スペーサと前記第三スペーサを残すステップと、
前記エッチング予定層を、少なくとも前記第一スペーサと前記第三スペーサをパターンとして用いてエッチングするステップと、
をさらに含む、請求項18の方法。 - 1/(2m-1) となる前記所望のフィーチャ縮小を選択するステップであって、“m”は3であるので前記完成したフィーチャ密度は前記開始フィーチャ密度の約5倍であり、前記完成したフィーチャピッチは前記元のピッチの約1/5倍である、ステップと、
前記エッチング予定層を、前記第一スペーサと前記第三スペーサのみをパターンとして用いてエッチングするステップと、
をさらに含む、請求項21の方法。 - エッチング予定層を設けるステップと、
前記エッチング予定層の上に犠牲パターン層を形成するステップであって、
前記犠牲パターン層は、少なくとも第一と第二の断面のある側壁を有する複数の区切られた部分を含む、ステップと、
複数の犠牲第一スペーサ層を形成するステップであって、一つのスペーサが前記犠牲パターン層の各区切られた部分の各側壁に接して形成されるステップと、
前記犠牲パターン層を除去するステップと、
前記複数の犠牲第一スペーサの上にコンフォーマル第二スペーサ層を形成するステップと、
前記犠牲第一スペーサに接して複数の第二スペーサを形成するために、前記コンフォーマル第二スペーサ層の一部分を除去するステップと、
前記第二スペーサを形成するステップに続いて、前記犠牲第一スペーサを除去するステップと、
前記エッチング予定層を前記第二スペーサをパターンとして用いてエッチングするステップと、
を含む方法を用いて半導体デバイスを製造するステップと、
マイクロプロセッサを設けるステップと、
前記半導体デバイスと前記マイクロプロセッサ間の電気経路を、それらの間の電気通信を容易にするために設けるステップと、
を含む、電子システムの製造中に使用する方法。 - エッチング予定層と、
複数の平坦化されたスペーサを含むエッチングマスクであって、前記複数のスペーサのうち少なくとも二つのスペーサは異なる材料を含み、前記複数のスペーサのうちの前記ス
ペーサは前記エッチング予定層の上に重なる同一平面上の上部表面を有する、エッチングマスクと、
を含む、製造中の半導体デバイス。 - フォトリソグラフィの限界寸法の1/n 倍の寸法からなり、“n”は2より大きい整数である、エッチングされたフィーチャ、
を含む、半導体デバイス。 - 前記エッチングされたフィーチャが、フォトリソグラフィの限界寸法の1/n 倍の前記寸法からなり、“n”は3以上の奇数の整数である、
請求項26の半導体デバイス。 - エッチング予定層と、
第一のマスク層部分と第二のマスク層部分が交互になっている複数の区切られた部分を有する断面からなる、前記エッチング予定層の上に重なるマスク層と、
を含み、
前記第一のマスク層部分はそれぞれ、一つの垂直方向型のピラーを含み、
前記第二のマスク層部分はそれぞれ、水平方向型の部分により接続した垂直方向型のピラーの組を含む、
製造中の半導体デバイス。 - 複数の犠牲スペーサのうちの一つが、第一のマスク層部分と第二のマスク層部分のそれぞれの間にはさまれている、複数の犠牲スペーサ、
をさらに含む、請求項28の製造中の半導体デバイス。
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WO2008008338A2 (en) | 2008-01-17 |
SG173362A1 (en) | 2011-08-29 |
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JP5453650B2 (ja) | 2014-03-26 |
US9305782B2 (en) | 2016-04-05 |
TW200818405A (en) | 2008-04-16 |
CN101490807B (zh) | 2014-07-16 |
US20160203993A1 (en) | 2016-07-14 |
KR101573286B1 (ko) | 2015-12-02 |
US10607844B2 (en) | 2020-03-31 |
US8852851B2 (en) | 2014-10-07 |
US11935756B2 (en) | 2024-03-19 |
WO2008008338A3 (en) | 2008-03-20 |
CN101490807A (zh) | 2009-07-22 |
KR20120092728A (ko) | 2012-08-21 |
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US20200203171A1 (en) | 2020-06-25 |
US10096483B2 (en) | 2018-10-09 |
TWI351738B (en) | 2011-11-01 |
US20080008969A1 (en) | 2008-01-10 |
US20170372913A1 (en) | 2017-12-28 |
US11335563B2 (en) | 2022-05-17 |
US9761457B2 (en) | 2017-09-12 |
US20150021744A1 (en) | 2015-01-22 |
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CN104064457A (zh) | 2014-09-24 |
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