JP2008530795A5 - - Google Patents

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Publication number
JP2008530795A5
JP2008530795A5 JP2007555091A JP2007555091A JP2008530795A5 JP 2008530795 A5 JP2008530795 A5 JP 2008530795A5 JP 2007555091 A JP2007555091 A JP 2007555091A JP 2007555091 A JP2007555091 A JP 2007555091A JP 2008530795 A5 JP2008530795 A5 JP 2008530795A5
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JP
Japan
Prior art keywords
fluid
carbon dioxide
substrate
adjusting
introducing
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Pending
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JP2007555091A
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English (en)
Japanese (ja)
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JP2008530795A (ja
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Priority claimed from US10/906,353 external-priority patent/US7291565B2/en
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Publication of JP2008530795A publication Critical patent/JP2008530795A/ja
Publication of JP2008530795A5 publication Critical patent/JP2008530795A5/ja
Pending legal-status Critical Current

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JP2007555091A 2005-02-15 2005-12-29 フルオロケイ酸を用いて高圧流体で基板を処理する方法およびシステム Pending JP2008530795A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/906,353 US7291565B2 (en) 2005-02-15 2005-02-15 Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
PCT/US2005/047343 WO2006088560A1 (en) 2005-02-15 2005-12-29 Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid

Publications (2)

Publication Number Publication Date
JP2008530795A JP2008530795A (ja) 2008-08-07
JP2008530795A5 true JP2008530795A5 (enExample) 2009-02-19

Family

ID=36481218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007555091A Pending JP2008530795A (ja) 2005-02-15 2005-12-29 フルオロケイ酸を用いて高圧流体で基板を処理する方法およびシステム

Country Status (4)

Country Link
US (1) US7291565B2 (enExample)
JP (1) JP2008530795A (enExample)
TW (1) TWI328252B (enExample)
WO (1) WO2006088560A1 (enExample)

Families Citing this family (14)

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US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
JP4555729B2 (ja) * 2005-05-17 2010-10-06 積水化学工業株式会社 レジスト除去方法及びレジスト除去装置
JP2007305676A (ja) * 2006-05-09 2007-11-22 Sony Corp 基板の処理方法及び処理装置
KR100829923B1 (ko) * 2006-08-30 2008-05-16 세메스 주식회사 스핀헤드 및 이를 이용하는 기판처리방법
JP5060791B2 (ja) * 2007-01-26 2012-10-31 独立行政法人森林総合研究所 木材の乾燥方法、木材への薬剤浸透方法及び乾燥装置
US8153533B2 (en) * 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
US8961701B2 (en) * 2008-09-24 2015-02-24 Lam Research Corporation Method and system of drying a microelectronic topography
US9620410B1 (en) 2009-01-20 2017-04-11 Lam Research Corporation Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process
US20100184301A1 (en) * 2009-01-20 2010-07-22 Lam Research Methods for Preventing Precipitation of Etch Byproducts During an Etch Process and/or Subsequent Rinse Process
JP2012151398A (ja) * 2011-01-21 2012-08-09 Toshiba Corp 超臨界乾燥装置及び方法
JP6189650B2 (ja) * 2013-06-07 2017-08-30 昭和電工ガスプロダクツ株式会社 超臨界処理装置
US11515178B2 (en) 2020-03-16 2022-11-29 Tokyo Electron Limited System and methods for wafer drying
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법

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